CN100476678C - 定电压发生电路 - Google Patents

定电压发生电路 Download PDF

Info

Publication number
CN100476678C
CN100476678C CNB2005800329925A CN200580032992A CN100476678C CN 100476678 C CN100476678 C CN 100476678C CN B2005800329925 A CNB2005800329925 A CN B2005800329925A CN 200580032992 A CN200580032992 A CN 200580032992A CN 100476678 C CN100476678 C CN 100476678C
Authority
CN
China
Prior art keywords
potential
voltage generating
voltage
reference voltage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CNB2005800329925A
Other languages
English (en)
Chinese (zh)
Other versions
CN101031855A (zh
Inventor
人见正彦
下鹤雅士
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Holdings Co Ltd
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Holdings Co Ltd, Citizen Watch Co Ltd filed Critical Citizen Holdings Co Ltd
Publication of CN101031855A publication Critical patent/CN101031855A/zh
Application granted granted Critical
Publication of CN100476678C publication Critical patent/CN100476678C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Amplifiers (AREA)
CNB2005800329925A 2004-09-30 2005-09-29 定电压发生电路 Expired - Lifetime CN100476678C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP285925/2004 2004-09-30
JP2004285925A JP4627651B2 (ja) 2004-09-30 2004-09-30 定電圧発生回路

Publications (2)

Publication Number Publication Date
CN101031855A CN101031855A (zh) 2007-09-05
CN100476678C true CN100476678C (zh) 2009-04-08

Family

ID=36119044

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005800329925A Expired - Lifetime CN100476678C (zh) 2004-09-30 2005-09-29 定电压发生电路

Country Status (6)

Country Link
US (1) US7560980B2 (enExample)
EP (1) EP1798627B1 (enExample)
JP (1) JP4627651B2 (enExample)
CN (1) CN100476678C (enExample)
DE (1) DE602005016287D1 (enExample)
WO (1) WO2006035898A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5426220B2 (ja) * 2009-04-13 2014-02-26 株式会社東芝 電源ノイズ除去回路
JP2013051858A (ja) * 2011-08-31 2013-03-14 Toshiba Corp 定電圧電源回路及び半導体集積回路
JP6083269B2 (ja) * 2013-03-18 2017-02-22 株式会社ソシオネクスト 電源回路及び半導体装置
JP5983552B2 (ja) * 2013-07-19 2016-08-31 株式会社デンソー 定電流定電圧回路
JP6320273B2 (ja) * 2014-10-27 2018-05-09 三菱電機株式会社 駆動回路
CN113566912A (zh) * 2020-04-29 2021-10-29 上海肯特仪表股份有限公司 一种效率高干扰小的电磁水表电路
EP4254127B1 (en) 2022-03-29 2025-03-12 Imec VZW A voltage reference circuit and a power management unit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85104092A (zh) * 1985-05-23 1987-03-04 中国科学院东海研究站 数字式稳压电源
JP2594470Y2 (ja) * 1992-04-24 1999-04-26 シチズン時計株式会社 基準電圧発生回路
CN2374879Y (zh) * 1999-04-23 2000-04-19 乐清市长城电源有限公司 无空耗交流自动调压器

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857823A (en) * 1988-09-22 1989-08-15 Ncr Corporation Bandgap voltage reference including a process and temperature insensitive start-up circuit and power-down capability
JPH03288217A (ja) * 1990-04-03 1991-12-18 Mitsubishi Electric Corp 半導体集積回路装置
JP3118929B2 (ja) 1992-01-27 2000-12-18 松下電工株式会社 定電圧回路
JP3149992B2 (ja) 1992-08-06 2001-03-26 日本電気アイシーマイコンシステム株式会社 半導体集積回路
KR970010284B1 (en) * 1993-12-18 1997-06-23 Samsung Electronics Co Ltd Internal voltage generator of semiconductor integrated circuit
JPH07250437A (ja) * 1994-03-09 1995-09-26 Canon Inc 太陽電池を用いた電源装置
KR0143344B1 (ko) * 1994-11-02 1998-08-17 김주용 온도의 변화에 대하여 보상 기능이 있는 기준전압 발생기
JPH09265329A (ja) 1996-03-27 1997-10-07 New Japan Radio Co Ltd バイアス発生回路およびレギュレータ回路
JP3185698B2 (ja) * 1997-02-20 2001-07-11 日本電気株式会社 基準電圧発生回路
KR100240874B1 (ko) * 1997-03-18 2000-01-15 윤종용 반도체장치의내부전압발생회로
JP3556482B2 (ja) * 1998-09-03 2004-08-18 株式会社東芝 定電圧発生回路
EP1063578B1 (en) * 1999-06-22 2002-09-11 Alcatel Reference voltage generator with monitoring and start up means
JP3423282B2 (ja) 2000-10-18 2003-07-07 株式会社 沖マイクロデザイン 半導体集積回路
KR100399437B1 (ko) * 2001-06-29 2003-09-29 주식회사 하이닉스반도체 내부 전원전압 발생장치
DE10237122B4 (de) * 2002-08-13 2011-06-22 Infineon Technologies AG, 81669 Schaltung und Verfahren zur Einstellung des Arbeitspunkts einer BGR-Schaltung
US6677808B1 (en) * 2002-08-16 2004-01-13 National Semiconductor Corporation CMOS adjustable bandgap reference with low power and low voltage performance
US6815941B2 (en) * 2003-02-05 2004-11-09 United Memories, Inc. Bandgap reference circuit
US6784652B1 (en) * 2003-02-25 2004-08-31 National Semiconductor Corporation Startup circuit for bandgap voltage reference generator
JP3561716B1 (ja) * 2003-05-30 2004-09-02 沖電気工業株式会社 定電圧回路
KR100626367B1 (ko) * 2003-10-02 2006-09-20 삼성전자주식회사 내부전압 발생장치
JP4150326B2 (ja) * 2003-11-12 2008-09-17 株式会社リコー 定電圧回路
US7113025B2 (en) * 2004-04-16 2006-09-26 Raum Technology Corp. Low-voltage bandgap voltage reference circuit
KR101056737B1 (ko) * 2004-09-20 2011-08-16 삼성전자주식회사 내부 전원 전압을 발생하는 장치
US7321256B1 (en) * 2005-10-18 2008-01-22 Xilinx, Inc. Highly reliable and zero static current start-up circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN85104092A (zh) * 1985-05-23 1987-03-04 中国科学院东海研究站 数字式稳压电源
JP2594470Y2 (ja) * 1992-04-24 1999-04-26 シチズン時計株式会社 基準電圧発生回路
CN2374879Y (zh) * 1999-04-23 2000-04-19 乐清市长城电源有限公司 无空耗交流自动调压器

Also Published As

Publication number Publication date
EP1798627A4 (en) 2008-04-02
US7560980B2 (en) 2009-07-14
JP2006099507A (ja) 2006-04-13
EP1798627B1 (en) 2009-08-26
EP1798627A1 (en) 2007-06-20
JP4627651B2 (ja) 2011-02-09
DE602005016287D1 (de) 2009-10-08
US20080018386A1 (en) 2008-01-24
CN101031855A (zh) 2007-09-05
WO2006035898A1 (ja) 2006-04-06

Similar Documents

Publication Publication Date Title
US7652455B2 (en) Low-dropout voltage regulator with a voltage slew rate efficient transient response boost circuit
CN1900875B (zh) 电压调节器
US8093881B2 (en) Reference voltage generation circuit with start-up circuit
KR101800600B1 (ko) 전류―모드 프로그래밍가능한 기준 회로들 및 그를 위한 방법들
JP5202980B2 (ja) 定電流回路
KR20190141868A (ko) 발진기
US20070164722A1 (en) Low power beta multiplier start-up circuit and method
US6380799B1 (en) Internal voltage generation circuit having stable operating characteristics at low external supply voltages
JP7113811B2 (ja) デジタル回路のｐｖｔ変動を補償するための補償装置
JP4445780B2 (ja) 電圧レギュレータ
JP3335183B2 (ja) バッファ回路
CN100476678C (zh) 定电压发生电路
JP2001156256A (ja) 降圧回路
US20060125460A1 (en) Reference current generator
US6940335B2 (en) Constant-voltage circuit
JPH0917180A (ja) 半導体素子の基板電圧調整装置
CN110658880B (zh) 低压降电压稳压器
JPH0730334A (ja) 降圧回路及びこれを内蔵した半導体集積回路
JP5040397B2 (ja) 基準電圧回路
CN110601658B (zh) 低电压vco的控制电压范围的自动补偿
US7474152B2 (en) Operational amplifier circuit
CN112039509B (zh) 毫伏功率采集fet控制器
JP2021196806A (ja) バイアス電流発生回路
JP2010250650A (ja) 定電圧供給装置
JP4018561B2 (ja) 起動回路

Legal Events

Date Code Title Description
C06 Publication
C41 Transfer of patent application or patent right or utility model
PB01 Publication
TA01 Transfer of patent application right

Effective date of registration: 20070727

Address after: Tokyo, Japan

Applicant after: CITIZEN HOLDINGS Co.,Ltd.

Address before: Tokyo, Japan

Applicant before: CITIZEN WATCH Co.,Ltd.

C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
REG Reference to a national code

Ref country code: HK

Ref legal event code: DE

Ref document number: 1111485

Country of ref document: HK

C14 Grant of patent or utility model
GR01 Patent grant
REG Reference to a national code

Ref country code: HK

Ref legal event code: WD

Ref document number: 1111485

Country of ref document: HK

CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Tokyo, Japan

Patentee after: CITIZEN WATCH Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: CITIZEN HOLDINGS Co.,Ltd.

CX01 Expiry of patent term

Granted publication date: 20090408

CX01 Expiry of patent term