CN101031855A - 定电压发生电路 - Google Patents
定电压发生电路 Download PDFInfo
- Publication number
- CN101031855A CN101031855A CNA2005800329925A CN200580032992A CN101031855A CN 101031855 A CN101031855 A CN 101031855A CN A2005800329925 A CNA2005800329925 A CN A2005800329925A CN 200580032992 A CN200580032992 A CN 200580032992A CN 101031855 A CN101031855 A CN 101031855A
- Authority
- CN
- China
- Prior art keywords
- voltage
- current potential
- potential
- reference voltage
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000033228 biological regulation Effects 0.000 claims description 27
- 239000003381 stabilizer Substances 0.000 claims description 20
- 101000806846 Homo sapiens DNA-(apurinic or apyrimidinic site) endonuclease Proteins 0.000 abstract description 32
- 101000835083 Homo sapiens Tissue factor pathway inhibitor 2 Proteins 0.000 abstract description 32
- 102100026134 Tissue factor pathway inhibitor 2 Human genes 0.000 abstract description 32
- 101100219315 Arabidopsis thaliana CYP83A1 gene Proteins 0.000 description 23
- 101100269674 Mus musculus Alyref2 gene Proteins 0.000 description 23
- 101100140580 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) REF2 gene Proteins 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 18
- 239000011159 matrix material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 4
- 238000011105 stabilization Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/34—DC amplifiers in which all stages are DC-coupled
- H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
- H03F3/345—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with field-effect devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/507—A switch being used for switching on or off a supply or supplying circuit in an IC-block amplifier circuit
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004285925A JP4627651B2 (ja) | 2004-09-30 | 2004-09-30 | 定電圧発生回路 |
JP285925/2004 | 2004-09-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101031855A true CN101031855A (zh) | 2007-09-05 |
CN100476678C CN100476678C (zh) | 2009-04-08 |
Family
ID=36119044
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005800329925A Active CN100476678C (zh) | 2004-09-30 | 2005-09-29 | 定电压发生电路 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7560980B2 (zh) |
EP (1) | EP1798627B1 (zh) |
JP (1) | JP4627651B2 (zh) |
CN (1) | CN100476678C (zh) |
DE (1) | DE602005016287D1 (zh) |
WO (1) | WO2006035898A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101860665A (zh) * | 2009-04-13 | 2010-10-13 | 株式会社东芝 | 电源噪声消除电路及固体摄像装置 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013051858A (ja) * | 2011-08-31 | 2013-03-14 | Toshiba Corp | 定電圧電源回路及び半導体集積回路 |
JP6083269B2 (ja) * | 2013-03-18 | 2017-02-22 | 株式会社ソシオネクスト | 電源回路及び半導体装置 |
JP5983552B2 (ja) * | 2013-07-19 | 2016-08-31 | 株式会社デンソー | 定電流定電圧回路 |
JP6320273B2 (ja) * | 2014-10-27 | 2018-05-09 | 三菱電機株式会社 | 駆動回路 |
EP4254127A1 (en) * | 2022-03-29 | 2023-10-04 | Imec VZW | A voltage reference circuit and a power management unit |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85104092A (zh) * | 1985-05-23 | 1987-03-04 | 中国科学院东海研究站 | 数字式稳压电源 |
US4857823A (en) * | 1988-09-22 | 1989-08-15 | Ncr Corporation | Bandgap voltage reference including a process and temperature insensitive start-up circuit and power-down capability |
JPH03288217A (ja) * | 1990-04-03 | 1991-12-18 | Mitsubishi Electric Corp | 半導体集積回路装置 |
JP3118929B2 (ja) | 1992-01-27 | 2000-12-18 | 松下電工株式会社 | 定電圧回路 |
JP2594470Y2 (ja) * | 1992-04-24 | 1999-04-26 | シチズン時計株式会社 | 基準電圧発生回路 |
JP3149992B2 (ja) | 1992-08-06 | 2001-03-26 | 日本電気アイシーマイコンシステム株式会社 | 半導体集積回路 |
KR970010284B1 (en) * | 1993-12-18 | 1997-06-23 | Samsung Electronics Co Ltd | Internal voltage generator of semiconductor integrated circuit |
JPH07250437A (ja) * | 1994-03-09 | 1995-09-26 | Canon Inc | 太陽電池を用いた電源装置 |
KR0143344B1 (ko) * | 1994-11-02 | 1998-08-17 | 김주용 | 온도의 변화에 대하여 보상 기능이 있는 기준전압 발생기 |
JPH09265329A (ja) | 1996-03-27 | 1997-10-07 | New Japan Radio Co Ltd | バイアス発生回路およびレギュレータ回路 |
JP3185698B2 (ja) * | 1997-02-20 | 2001-07-11 | 日本電気株式会社 | 基準電圧発生回路 |
KR100240874B1 (ko) * | 1997-03-18 | 2000-01-15 | 윤종용 | 반도체장치의내부전압발생회로 |
JP3556482B2 (ja) * | 1998-09-03 | 2004-08-18 | 株式会社東芝 | 定電圧発生回路 |
CN2374879Y (zh) * | 1999-04-23 | 2000-04-19 | 乐清市长城电源有限公司 | 无空耗交流自动调压器 |
EP1063578B1 (en) * | 1999-06-22 | 2002-09-11 | Alcatel | Reference voltage generator with monitoring and start up means |
JP3423282B2 (ja) | 2000-10-18 | 2003-07-07 | 株式会社 沖マイクロデザイン | 半導体集積回路 |
KR100399437B1 (ko) * | 2001-06-29 | 2003-09-29 | 주식회사 하이닉스반도체 | 내부 전원전압 발생장치 |
DE10237122B4 (de) * | 2002-08-13 | 2011-06-22 | Infineon Technologies AG, 81669 | Schaltung und Verfahren zur Einstellung des Arbeitspunkts einer BGR-Schaltung |
US6677808B1 (en) * | 2002-08-16 | 2004-01-13 | National Semiconductor Corporation | CMOS adjustable bandgap reference with low power and low voltage performance |
US6815941B2 (en) * | 2003-02-05 | 2004-11-09 | United Memories, Inc. | Bandgap reference circuit |
US6784652B1 (en) * | 2003-02-25 | 2004-08-31 | National Semiconductor Corporation | Startup circuit for bandgap voltage reference generator |
JP3561716B1 (ja) * | 2003-05-30 | 2004-09-02 | 沖電気工業株式会社 | 定電圧回路 |
KR100626367B1 (ko) * | 2003-10-02 | 2006-09-20 | 삼성전자주식회사 | 내부전압 발생장치 |
JP4150326B2 (ja) * | 2003-11-12 | 2008-09-17 | 株式会社リコー | 定電圧回路 |
US7113025B2 (en) * | 2004-04-16 | 2006-09-26 | Raum Technology Corp. | Low-voltage bandgap voltage reference circuit |
KR101056737B1 (ko) * | 2004-09-20 | 2011-08-16 | 삼성전자주식회사 | 내부 전원 전압을 발생하는 장치 |
US7321256B1 (en) * | 2005-10-18 | 2008-01-22 | Xilinx, Inc. | Highly reliable and zero static current start-up circuits |
-
2004
- 2004-09-30 JP JP2004285925A patent/JP4627651B2/ja active Active
-
2005
- 2005-09-29 WO PCT/JP2005/018014 patent/WO2006035898A1/ja active Application Filing
- 2005-09-29 EP EP05788196A patent/EP1798627B1/en active Active
- 2005-09-29 US US11/663,997 patent/US7560980B2/en active Active
- 2005-09-29 DE DE602005016287T patent/DE602005016287D1/de active Active
- 2005-09-29 CN CNB2005800329925A patent/CN100476678C/zh active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101860665A (zh) * | 2009-04-13 | 2010-10-13 | 株式会社东芝 | 电源噪声消除电路及固体摄像装置 |
CN101860665B (zh) * | 2009-04-13 | 2012-12-26 | 株式会社东芝 | 电源噪声消除电路及固体摄像装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1798627B1 (en) | 2009-08-26 |
EP1798627A4 (en) | 2008-04-02 |
US20080018386A1 (en) | 2008-01-24 |
US7560980B2 (en) | 2009-07-14 |
DE602005016287D1 (de) | 2009-10-08 |
JP2006099507A (ja) | 2006-04-13 |
WO2006035898A1 (ja) | 2006-04-06 |
EP1798627A1 (en) | 2007-06-20 |
CN100476678C (zh) | 2009-04-08 |
JP4627651B2 (ja) | 2011-02-09 |
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Legal Events
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C06 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20070727 Address after: Tokyo, Japan, Japan Applicant after: Citizen Watch Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Citizen Watch Co., Ltd. |
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CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Citizen Watch Co., Ltd. Address before: Tokyo, Japan, Japan Patentee before: Citizen Watch Co., Ltd. |
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CP01 | Change in the name or title of a patent holder |