CN100458751C - 并行闪存控制器 - Google Patents

并行闪存控制器 Download PDF

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Publication number
CN100458751C
CN100458751C CNB2007100743555A CN200710074355A CN100458751C CN 100458751 C CN100458751 C CN 100458751C CN B2007100743555 A CNB2007100743555 A CN B2007100743555A CN 200710074355 A CN200710074355 A CN 200710074355A CN 100458751 C CN100458751 C CN 100458751C
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flash memory
flash
passage
chip
instruction
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CNB2007100743555A
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Chinese (zh)
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CN101082891A (zh
Inventor
黄河
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Zhiyu Technology Co ltd
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Memoright Shenzhen Co Ltd
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Priority to CNB2007100743555A priority Critical patent/CN100458751C/zh
Priority to TW096136198A priority patent/TWI421680B/zh
Publication of CN101082891A publication Critical patent/CN101082891A/zh
Priority to JP2010506793A priority patent/JP2010527059A/ja
Priority to US12/599,497 priority patent/US8661188B2/en
Priority to PCT/CN2008/070884 priority patent/WO2008138249A1/en
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4239—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with asynchronous protocol
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
CNB2007100743555A 2007-05-10 2007-05-10 并行闪存控制器 Active CN100458751C (zh)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CNB2007100743555A CN100458751C (zh) 2007-05-10 2007-05-10 并行闪存控制器
TW096136198A TWI421680B (zh) 2007-05-10 2007-09-28 Parallel flash memory controller
JP2010506793A JP2010527059A (ja) 2007-05-10 2008-05-05 パラレルフラッシュメモリ制御装置、チップ及びその制御方法
US12/599,497 US8661188B2 (en) 2007-05-10 2008-05-05 Parallel flash memory controller, chip and control method thereof
PCT/CN2008/070884 WO2008138249A1 (en) 2007-05-10 2008-05-05 Parallel flash memory controller, chip and control method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2007100743555A CN100458751C (zh) 2007-05-10 2007-05-10 并行闪存控制器

Publications (2)

Publication Number Publication Date
CN101082891A CN101082891A (zh) 2007-12-05
CN100458751C true CN100458751C (zh) 2009-02-04

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CNB2007100743555A Active CN100458751C (zh) 2007-05-10 2007-05-10 并行闪存控制器

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US (1) US8661188B2 (https=)
JP (1) JP2010527059A (https=)
CN (1) CN100458751C (https=)
TW (1) TWI421680B (https=)
WO (1) WO2008138249A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011091690A1 (zh) * 2010-01-27 2011-08-04 中兴通讯股份有限公司 一种数据处理方法和装置

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100458751C (zh) * 2007-05-10 2009-02-04 忆正存储技术(深圳)有限公司 并行闪存控制器
CN101246450B (zh) * 2008-03-26 2010-04-21 普天信息技术研究院有限公司 一种闪存存储器及其存储空间管理方法
CN101556771B (zh) * 2008-04-08 2012-11-28 联咏科技股份有限公司 用于一液晶显示器控制器的微处理器装置及相关方法
US8843691B2 (en) 2008-06-25 2014-09-23 Stec, Inc. Prioritized erasure of data blocks in a flash storage device
CN101740102B (zh) * 2008-11-11 2014-03-26 西安奇维测控科技有限公司 一种多通道闪存芯片阵列结构及其写入和读出方法
CN101739343B (zh) * 2008-11-24 2012-08-22 威刚科技股份有限公司 闪存系统及其运作方法
KR101541344B1 (ko) 2008-12-05 2015-08-03 삼성전자주식회사 메모리 장치 및 메모리 장치의 제어 방법
US8055816B2 (en) 2009-04-09 2011-11-08 Micron Technology, Inc. Memory controllers, memory systems, solid state drives and methods for processing a number of commands
TW201044371A (en) * 2009-06-15 2010-12-16 Novatek Microelectronics Corp Memory architecture of display device and reading method thereof
TWI449043B (zh) * 2009-12-17 2014-08-11 Novatek Microelectronics Corp 高速記憶體系統
US8429374B2 (en) * 2010-01-28 2013-04-23 Sony Corporation System and method for read-while-write with NAND memory device
CN101980140B (zh) * 2010-11-15 2012-02-22 北京北方烽火科技有限公司 一种ssram访问控制系统
TWI459206B (zh) * 2010-12-08 2014-11-01 Etron Technology Inc 在一匯流排上操作快閃記憶體的方法
CN102591823A (zh) * 2011-01-17 2012-07-18 上海华虹集成电路有限责任公司 一种具有指令队列功能的Nandflash控制器
CN102708061B (zh) * 2011-03-28 2015-04-08 联咏科技股份有限公司 显示装置的内存架构及其控制方法
JP2012221038A (ja) * 2011-04-05 2012-11-12 Toshiba Corp メモリシステム
CN102222055A (zh) * 2011-06-02 2011-10-19 钟浩 提高大容量固态数据存储系统运行速度的装置及其方法
US9177609B2 (en) 2011-06-30 2015-11-03 Sandisk Technologies Inc. Smart bridge for memory core
US8645618B2 (en) * 2011-07-14 2014-02-04 Lsi Corporation Flexible flash commands
US20130019052A1 (en) * 2011-07-14 2013-01-17 Vinay Ashok Somanache Effective utilization of flash interface
US20130019053A1 (en) * 2011-07-14 2013-01-17 Vinay Ashok Somanache Flash controller hardware architecture for flash devices
US8806112B2 (en) 2011-07-14 2014-08-12 Lsi Corporation Meta data handling within a flash media controller
CN102890617B (zh) * 2011-07-18 2015-06-10 群联电子股份有限公司 存储器控制方法、存储器控制器与存储器储存装置
US9208070B2 (en) * 2011-12-20 2015-12-08 Sandisk Technologies Inc. Wear leveling of multiple memory devices
US9336112B2 (en) 2012-06-19 2016-05-10 Apple Inc. Parallel status polling of multiple memory devices
KR102012740B1 (ko) 2012-07-18 2019-08-21 삼성전자주식회사 복수의 불휘발성 메모리 칩들을 포함하는 저장 장치 및 그것의 제어 방법
WO2014077823A2 (en) 2012-11-15 2014-05-22 Empire Technology Development Llc A scalable storage system having multiple storage channels
KR20140065678A (ko) * 2012-11-20 2014-05-30 에스케이하이닉스 주식회사 반도체 장치 및 이를 이용한 반도체 장치의 동작 방법
CN103500075A (zh) * 2013-10-11 2014-01-08 张维加 一种基于新材料的外接的计算机加速设备
CN103500076A (zh) * 2013-10-13 2014-01-08 张维加 一种基于多通道slc nand与dram缓存的新usb协议计算机加速设备
WO2016017287A1 (ja) * 2014-07-28 2016-02-04 ソニー株式会社 メモリコントローラ、メモリシステムおよび情報処理システム
US9772777B2 (en) * 2015-04-27 2017-09-26 Southwest Research Institute Systems and methods for improved access to flash memory devices
JP6363978B2 (ja) * 2015-08-05 2018-07-25 株式会社メガチップス 半導体記憶装置及びその制御方法
KR102526104B1 (ko) * 2016-03-25 2023-04-27 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
CN105912307B (zh) * 2016-04-27 2018-09-07 浪潮(北京)电子信息产业有限公司 一种Flash控制器数据处理方法及装置
EP3495958B1 (en) * 2016-08-31 2020-07-08 Huawei Technologies Co., Ltd. Flash memory medium access method and controller
CN106528465B (zh) * 2016-11-10 2019-08-02 郑州云海信息技术有限公司 一种Nand Flash控制器及方法
CN109614049B (zh) * 2018-12-11 2022-03-25 湖南国科微电子股份有限公司 闪存控制方法、闪存控制器及闪存系统
CN111913839A (zh) * 2019-05-10 2020-11-10 合肥格易集成电路有限公司 一种闪存芯片的老化验证装置和系统
CN112346646B (zh) * 2019-08-06 2023-05-23 天津光电通信技术有限公司 高速大容量存储器及写入、读取和擦除方法
JP2021043536A (ja) 2019-09-06 2021-03-18 キオクシア株式会社 半導体装置、及び半導体装置の制御方法
US10790039B1 (en) * 2019-09-26 2020-09-29 Micron Technology, Inc. Semiconductor device having a test circuit
WO2021134521A1 (zh) * 2019-12-31 2021-07-08 北京希姆计算科技有限公司 一种存储管理装置及芯片
CN115004146B (zh) * 2020-02-14 2025-09-19 华为技术有限公司 固态存储硬盘和固态存储硬盘的控制方法
CN112000276B (zh) * 2020-06-19 2023-04-11 浙江绍兴青逸信息科技有限责任公司 一种内存条
US11914893B2 (en) * 2020-11-18 2024-02-27 Micron Technology, Inc. Managed memory systems with multiple priority queues
TWI747660B (zh) * 2020-12-14 2021-11-21 慧榮科技股份有限公司 多閃存晶片的資料讀取方法及裝置以及電腦程式產品
CN114625307B (zh) 2020-12-14 2025-11-25 慧荣科技股份有限公司 计算机可读存储介质、闪存芯片的数据读取方法及装置
US11567699B2 (en) * 2021-02-04 2023-01-31 Silicon Motion, Inc. Memory controller having a plurality of control modules and associated server
CN114257263B (zh) * 2021-11-22 2023-06-09 中电科思仪科技股份有限公司 一种基于触发的高机动信道模拟装置及方法
CN115033178B (zh) * 2022-06-21 2024-09-10 江苏扬贺扬微电子科技有限公司 闪存集中控制方法、装置、控制芯片及存储介质
CN118349286B (zh) * 2024-06-18 2024-09-10 联芸科技(杭州)股份有限公司 处理器、指令处理的装置、电子设备以及指令处理方法
CN118885216B (zh) * 2024-09-29 2024-12-13 联芸科技(杭州)股份有限公司 指令调度装置及方法
CN120561041B (zh) * 2025-04-11 2025-12-26 湖南泽天智航电子技术有限公司 一种基于FPGA接口的Nand flash控制器实现方法及系统
CN121455426B (zh) * 2026-01-07 2026-03-13 济南浪潮数据技术有限公司 固态硬盘的容量优化方法、装置、电子设备及存储介质

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050160218A1 (en) * 2004-01-20 2005-07-21 Sun-Teck See Highly integrated mass storage device with an intelligent flash controller
CN1790308A (zh) * 2005-12-27 2006-06-21 北京中星微电子有限公司 多通道闪存传输控制器、芯片及存储设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6721820B2 (en) * 2002-05-15 2004-04-13 M-Systems Flash Disk Pioneers Ltd. Method for improving performance of a flash-based storage system using specialized flash controllers
CN1466063A (zh) 2002-06-14 2004-01-07 朱兴方 并行网络服务器
JP2005332443A (ja) * 2004-05-18 2005-12-02 Sony Corp 半導体記憶装置および信号処理システム
US7748001B2 (en) * 2004-09-23 2010-06-29 Intel Corporation Multi-thread processing system for detecting and handling live-lock conditions by arbitrating livelock priority of logical processors based on a predertermined amount of time
KR100666169B1 (ko) * 2004-12-17 2007-01-09 삼성전자주식회사 플래쉬 메모리 데이터 저장장치
KR100621631B1 (ko) * 2005-01-11 2006-09-13 삼성전자주식회사 반도체 디스크 제어 장치
JP4086198B2 (ja) * 2005-03-02 2008-05-14 三菱電機株式会社 データ保存装置
CN2791752Y (zh) * 2005-04-04 2006-06-28 苏州鹞鹰数据技术有限公司 高速数据存储设备
TW200732925A (en) * 2006-02-22 2007-09-01 Simpletech Inc Parallel data storage system
CN100458751C (zh) * 2007-05-10 2009-02-04 忆正存储技术(深圳)有限公司 并行闪存控制器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050160218A1 (en) * 2004-01-20 2005-07-21 Sun-Teck See Highly integrated mass storage device with an intelligent flash controller
CN1790308A (zh) * 2005-12-27 2006-06-21 北京中星微电子有限公司 多通道闪存传输控制器、芯片及存储设备

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011091690A1 (zh) * 2010-01-27 2011-08-04 中兴通讯股份有限公司 一种数据处理方法和装置

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Publication number Publication date
US8661188B2 (en) 2014-02-25
TWI421680B (zh) 2014-01-01
CN101082891A (zh) 2007-12-05
WO2008138249A1 (en) 2008-11-20
US20100325346A1 (en) 2010-12-23
TW200915066A (en) 2009-04-01
JP2010527059A (ja) 2010-08-05

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