JP2010527059A - パラレルフラッシュメモリ制御装置、チップ及びその制御方法 - Google Patents

パラレルフラッシュメモリ制御装置、チップ及びその制御方法 Download PDF

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JP2010527059A
JP2010527059A JP2010506793A JP2010506793A JP2010527059A JP 2010527059 A JP2010527059 A JP 2010527059A JP 2010506793 A JP2010506793 A JP 2010506793A JP 2010506793 A JP2010506793 A JP 2010506793A JP 2010527059 A JP2010527059 A JP 2010527059A
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flash memory
flash
memory control
parallel
channel
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JP2010527059A5 (https=
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ヘー ホアン
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メモライト メモリテック （シェンチェン） カンパニー リミテッド
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4239—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with asynchronous protocol
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Read Only Memory (AREA)
  • Memory System (AREA)
JP2010506793A 2007-05-10 2008-05-05 パラレルフラッシュメモリ制御装置、チップ及びその制御方法 Pending JP2010527059A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2007100743555A CN100458751C (zh) 2007-05-10 2007-05-10 并行闪存控制器
PCT/CN2008/070884 WO2008138249A1 (en) 2007-05-10 2008-05-05 Parallel flash memory controller, chip and control method thereof

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JP2010527059A true JP2010527059A (ja) 2010-08-05
JP2010527059A5 JP2010527059A5 (https=) 2011-06-23

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JP2010506793A Pending JP2010527059A (ja) 2007-05-10 2008-05-05 パラレルフラッシュメモリ制御装置、チップ及びその制御方法

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US (1) US8661188B2 (https=)
JP (1) JP2010527059A (https=)
CN (1) CN100458751C (https=)
TW (1) TWI421680B (https=)
WO (1) WO2008138249A1 (https=)

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JP2017033476A (ja) * 2015-08-05 2017-02-09 株式会社メガチップス 半導体記憶装置及びその制御方法
US11244711B2 (en) 2019-09-06 2022-02-08 Kioxia Corporation Semiconductor apparatus and method for controlling semiconductor apparatus

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CN102708061B (zh) * 2011-03-28 2015-04-08 联咏科技股份有限公司 显示装置的内存架构及其控制方法
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CN102222055A (zh) * 2011-06-02 2011-10-19 钟浩 提高大容量固态数据存储系统运行速度的装置及其方法
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CN102890617B (zh) * 2011-07-18 2015-06-10 群联电子股份有限公司 存储器控制方法、存储器控制器与存储器储存装置
US9208070B2 (en) * 2011-12-20 2015-12-08 Sandisk Technologies Inc. Wear leveling of multiple memory devices
US9336112B2 (en) 2012-06-19 2016-05-10 Apple Inc. Parallel status polling of multiple memory devices
KR102012740B1 (ko) 2012-07-18 2019-08-21 삼성전자주식회사 복수의 불휘발성 메모리 칩들을 포함하는 저장 장치 및 그것의 제어 방법
WO2014077823A2 (en) 2012-11-15 2014-05-22 Empire Technology Development Llc A scalable storage system having multiple storage channels
KR20140065678A (ko) * 2012-11-20 2014-05-30 에스케이하이닉스 주식회사 반도체 장치 및 이를 이용한 반도체 장치의 동작 방법
CN103500075A (zh) * 2013-10-11 2014-01-08 张维加 一种基于新材料的外接的计算机加速设备
CN103500076A (zh) * 2013-10-13 2014-01-08 张维加 一种基于多通道slc nand与dram缓存的新usb协议计算机加速设备
WO2016017287A1 (ja) * 2014-07-28 2016-02-04 ソニー株式会社 メモリコントローラ、メモリシステムおよび情報処理システム
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KR102526104B1 (ko) * 2016-03-25 2023-04-27 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
CN105912307B (zh) * 2016-04-27 2018-09-07 浪潮(北京)电子信息产业有限公司 一种Flash控制器数据处理方法及装置
EP3495958B1 (en) * 2016-08-31 2020-07-08 Huawei Technologies Co., Ltd. Flash memory medium access method and controller
CN106528465B (zh) * 2016-11-10 2019-08-02 郑州云海信息技术有限公司 一种Nand Flash控制器及方法
CN109614049B (zh) * 2018-12-11 2022-03-25 湖南国科微电子股份有限公司 闪存控制方法、闪存控制器及闪存系统
CN111913839A (zh) * 2019-05-10 2020-11-10 合肥格易集成电路有限公司 一种闪存芯片的老化验证装置和系统
CN112346646B (zh) * 2019-08-06 2023-05-23 天津光电通信技术有限公司 高速大容量存储器及写入、读取和擦除方法
US10790039B1 (en) * 2019-09-26 2020-09-29 Micron Technology, Inc. Semiconductor device having a test circuit
WO2021134521A1 (zh) * 2019-12-31 2021-07-08 北京希姆计算科技有限公司 一种存储管理装置及芯片
CN115004146B (zh) * 2020-02-14 2025-09-19 华为技术有限公司 固态存储硬盘和固态存储硬盘的控制方法
CN112000276B (zh) * 2020-06-19 2023-04-11 浙江绍兴青逸信息科技有限责任公司 一种内存条
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CN114625307B (zh) 2020-12-14 2025-11-25 慧荣科技股份有限公司 计算机可读存储介质、闪存芯片的数据读取方法及装置
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CN114257263B (zh) * 2021-11-22 2023-06-09 中电科思仪科技股份有限公司 一种基于触发的高机动信道模拟装置及方法
CN115033178B (zh) * 2022-06-21 2024-09-10 江苏扬贺扬微电子科技有限公司 闪存集中控制方法、装置、控制芯片及存储介质
CN118349286B (zh) * 2024-06-18 2024-09-10 联芸科技(杭州)股份有限公司 处理器、指令处理的装置、电子设备以及指令处理方法
CN118885216B (zh) * 2024-09-29 2024-12-13 联芸科技(杭州)股份有限公司 指令调度装置及方法
CN120561041B (zh) * 2025-04-11 2025-12-26 湖南泽天智航电子技术有限公司 一种基于FPGA接口的Nand flash控制器实现方法及系统
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JP2017033476A (ja) * 2015-08-05 2017-02-09 株式会社メガチップス 半導体記憶装置及びその制御方法
US11244711B2 (en) 2019-09-06 2022-02-08 Kioxia Corporation Semiconductor apparatus and method for controlling semiconductor apparatus

Also Published As

Publication number Publication date
US8661188B2 (en) 2014-02-25
TWI421680B (zh) 2014-01-01
CN101082891A (zh) 2007-12-05
WO2008138249A1 (en) 2008-11-20
US20100325346A1 (en) 2010-12-23
CN100458751C (zh) 2009-02-04
TW200915066A (en) 2009-04-01

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