CN100452402C - 半导体器件及其制造方法 - Google Patents
半导体器件及其制造方法 Download PDFInfo
- Publication number
- CN100452402C CN100452402C CNB2005100045662A CN200510004566A CN100452402C CN 100452402 C CN100452402 C CN 100452402C CN B2005100045662 A CNB2005100045662 A CN B2005100045662A CN 200510004566 A CN200510004566 A CN 200510004566A CN 100452402 C CN100452402 C CN 100452402C
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- capacitor
- device isolation
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims description 44
- 239000003990 capacitor Substances 0.000 claims abstract description 92
- 238000002955 isolation Methods 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 67
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 60
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000012535 impurity Substances 0.000 claims abstract description 32
- 239000011810 insulating material Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 29
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- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000012298 atmosphere Substances 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 140
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 description 69
- 235000012239 silicon dioxide Nutrition 0.000 description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 32
- 229910052710 silicon Inorganic materials 0.000 description 32
- 239000010703 silicon Substances 0.000 description 32
- 150000002500 ions Chemical class 0.000 description 21
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- 229920005591 polysilicon Polymers 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
- H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
- H01L29/945—Trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004225308 | 2004-08-02 | ||
JP2004225308A JP2006049413A (ja) | 2004-08-02 | 2004-08-02 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1734769A CN1734769A (zh) | 2006-02-15 |
CN100452402C true CN100452402C (zh) | 2009-01-14 |
Family
ID=35731136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100045662A Expired - Fee Related CN100452402C (zh) | 2004-08-02 | 2005-01-17 | 半导体器件及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7414278B2 (zh) |
JP (1) | JP2006049413A (zh) |
CN (1) | CN100452402C (zh) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4781673B2 (ja) | 2004-12-28 | 2011-09-28 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US20080213967A1 (en) * | 2005-09-12 | 2008-09-04 | Yi-Nan Su | Trench capacitor and method for manufacturing the same |
US7811935B2 (en) * | 2006-03-07 | 2010-10-12 | Micron Technology, Inc. | Isolation regions and their formation |
JP4675813B2 (ja) * | 2006-03-31 | 2011-04-27 | Okiセミコンダクタ株式会社 | 半導体記憶装置およびその製造方法 |
KR100833180B1 (ko) * | 2006-07-06 | 2008-05-28 | 삼성전자주식회사 | Sti 구조를 갖는 반도체 장치 및 그 제조방법 |
US7521763B2 (en) * | 2007-01-03 | 2009-04-21 | International Business Machines Corporation | Dual stress STI |
US20100264478A1 (en) * | 2007-10-31 | 2010-10-21 | Agere Systems Inc. | Method to reduce trench capacitor leakage for random access memory device |
KR101374338B1 (ko) * | 2007-11-14 | 2014-03-14 | 삼성전자주식회사 | 관통 전극을 갖는 반도체 장치 및 그 제조방법 |
US8216913B2 (en) * | 2007-12-24 | 2012-07-10 | Texas Instruments Incorporated | Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interface |
US7985655B2 (en) * | 2008-11-25 | 2011-07-26 | Freescale Semiconductor, Inc. | Through-via and method of forming |
US7923369B2 (en) * | 2008-11-25 | 2011-04-12 | Freescale Semiconductor, Inc. | Through-via and method of forming |
US7999300B2 (en) * | 2009-01-28 | 2011-08-16 | Globalfoundries Singapore Pte. Ltd. | Memory cell structure and method for fabrication thereof |
JP2010239001A (ja) * | 2009-03-31 | 2010-10-21 | Sony Corp | 容量素子とその製造方法および固体撮像装置と撮像装置 |
US8021941B2 (en) * | 2009-07-21 | 2011-09-20 | International Business Machines Corporation | Bias-controlled deep trench substrate noise isolation integrated circuit device structures |
KR101714004B1 (ko) * | 2010-02-26 | 2017-03-09 | 삼성전자 주식회사 | 트랜치 형의 커패시터를 포함하는 반도체 장치 |
US8685818B2 (en) * | 2010-06-25 | 2014-04-01 | International Business Machines Corporation | Method of forming a shallow trench isolation embedded polysilicon resistor |
JP5581853B2 (ja) * | 2010-06-30 | 2014-09-03 | 富士通セミコンダクター株式会社 | 半導体装置およびその製造方法 |
WO2012102183A1 (en) * | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2012102182A1 (en) * | 2011-01-26 | 2012-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
TWI552345B (zh) | 2011-01-26 | 2016-10-01 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
US8772849B2 (en) | 2011-03-10 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
JP5933300B2 (ja) | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP5758729B2 (ja) * | 2011-07-27 | 2015-08-05 | ローム株式会社 | 半導体装置 |
DE102013108518B4 (de) | 2013-08-07 | 2016-11-24 | Infineon Technologies Ag | Halbleitervorrichtung und verfahren zum herstellen derselben |
US9953986B2 (en) * | 2013-12-20 | 2018-04-24 | Intel Corporation | Method and apparatus for improving read margin for an SRAM bit-cell |
DE102014223904A1 (de) | 2014-11-24 | 2016-05-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Kondensator und Verfahren zum Herstellen desselben |
US9502499B2 (en) * | 2015-02-13 | 2016-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure having multi-layered isolation trench structures |
US9679909B2 (en) * | 2015-06-25 | 2017-06-13 | Taiwan Samiconductor Manufacturing Co., Ltd. | Method for manufacturing a finger trench capacitor with a split-gate flash memory cell |
FR3122285B1 (fr) * | 2021-04-21 | 2023-06-02 | St Microelectronics Crolles 2 Sas | Capteur photographique |
US11581216B2 (en) * | 2021-05-03 | 2023-02-14 | Nanya Technology Corporation | Semiconductor device structure with multiple liners and method for forming the same |
CN117747536B (zh) * | 2024-02-21 | 2024-06-07 | 合肥晶合集成电路股份有限公司 | 一种半导体器件的制备方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1215914A (zh) * | 1997-06-24 | 1999-05-05 | 松下电子株式会社 | 半导体器件及其制作方法 |
US6090661A (en) * | 1998-03-19 | 2000-07-18 | Lsi Logic Corporation | Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
CN1507658A (zh) * | 2002-02-14 | 2004-06-23 | ���µ�����ҵ��ʽ���� | 半导体器件及其制造方法 |
US20040137667A1 (en) * | 2002-02-14 | 2004-07-15 | Hisashi Ogawa | Semiconductor device and its manufacturing method |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61107762A (ja) * | 1984-10-31 | 1986-05-26 | Toshiba Corp | 半導体記憶装置の製造方法 |
US6573548B2 (en) * | 1998-08-14 | 2003-06-03 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
KR100338767B1 (ko) * | 1999-10-12 | 2002-05-30 | 윤종용 | 트렌치 소자분리 구조와 이를 갖는 반도체 소자 및 트렌치 소자분리 방법 |
JP2002076287A (ja) * | 2000-08-28 | 2002-03-15 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
US6638813B1 (en) * | 2002-01-29 | 2003-10-28 | Taiwan Semiconductor Manufacturing Company | Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell |
JP2004111747A (ja) * | 2002-09-19 | 2004-04-08 | Tokyo Electron Ltd | 半導体基板の処理方法及び半導体素子 |
US20040129965A1 (en) * | 2003-01-08 | 2004-07-08 | Shih-Fang Chen | Trench capacitor process for preventing parasitic leakage |
US6882025B2 (en) * | 2003-04-25 | 2005-04-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained-channel transistor and methods of manufacture |
JP2005311173A (ja) * | 2004-04-23 | 2005-11-04 | Renesas Technology Corp | 半導体記憶装置および半導体記憶装置の製造方法 |
-
2004
- 2004-08-02 JP JP2004225308A patent/JP2006049413A/ja active Pending
- 2004-12-22 US US11/017,828 patent/US7414278B2/en active Active
-
2005
- 2005-01-17 CN CNB2005100045662A patent/CN100452402C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1215914A (zh) * | 1997-06-24 | 1999-05-05 | 松下电子株式会社 | 半导体器件及其制作方法 |
US6090661A (en) * | 1998-03-19 | 2000-07-18 | Lsi Logic Corporation | Formation of novel DRAM cell capacitors by integration of capacitors with isolation trench sidewalls |
CN1507658A (zh) * | 2002-02-14 | 2004-06-23 | ���µ�����ҵ��ʽ���� | 半导体器件及其制造方法 |
US20040137667A1 (en) * | 2002-02-14 | 2004-07-15 | Hisashi Ogawa | Semiconductor device and its manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
JP2006049413A (ja) | 2006-02-16 |
US7414278B2 (en) | 2008-08-19 |
CN1734769A (zh) | 2006-02-15 |
US20060022242A1 (en) | 2006-02-02 |
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Address after: Japan's Kanagawa Prefecture Yokohama Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Tokyo, Japan Patentee before: Fujitsu Microelectronics Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200730 Address after: Kanagawa Prefecture, Japan Patentee after: FUJITSU MICROELECTRONICS Ltd. Address before: Japan's Kanagawa Prefecture Yokohama Patentee before: FUJITSU MICROELECTRONICS Ltd. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090114 Termination date: 20220117 |