JP4781673B2 - 半導体記憶装置 - Google Patents
半導体記憶装置 Download PDFInfo
- Publication number
- JP4781673B2 JP4781673B2 JP2004379735A JP2004379735A JP4781673B2 JP 4781673 B2 JP4781673 B2 JP 4781673B2 JP 2004379735 A JP2004379735 A JP 2004379735A JP 2004379735 A JP2004379735 A JP 2004379735A JP 4781673 B2 JP4781673 B2 JP 4781673B2
- Authority
- JP
- Japan
- Prior art keywords
- recess
- active region
- upper electrode
- transistor
- dram cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000002955 isolation Methods 0.000 claims description 53
- 239000003990 capacitor Substances 0.000 claims description 34
- 229910021332 silicide Inorganic materials 0.000 claims description 25
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 18
- 238000009792 diffusion process Methods 0.000 claims description 17
- 239000012535 impurity Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 50
- 238000000034 method Methods 0.000 description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
- H10B12/0387—Making the trench
Description
Claims (2)
- 半導体基板上部に形成されたトレンチにより規定される活性領域と、
前記トレンチ内に形成された素子分離絶縁膜と、
前記活性領域に形成されたトランジスタと、
前記トランジスタのソースまたはドレイン領域に接続した不純物拡散層である下部電極、前記不純物拡散層の表面に形成された誘電体層、および前記誘電体層上に形成された上部電極から成るキャパシタとを備える半導体記憶装置であって、
前記素子分離絶縁膜は、前記活性領域と前記トランジスタのゲート電極の延在方向に当該活性領域に隣り合う他の活性領域との間の領域において、前記トレンチの内壁を露出するリセスを有し、
前記不純物拡散層および前記誘電体層は、前記活性領域の上面から前記リセス内に露出した前記トレンチの内壁にかけて延在し、
前記上部電極は、前記リセス内に埋め込まれた埋設部を有すると共に、前記リセス内に埋め込まれていない部分を有し、
前記埋設部の外側エッジは、前記活性領域と前記トランジスタのゲート電極の延在方向に当該活性領域に隣り合う他の活性領域との間の領域において、前記リセス内に埋め込まれていない部分の外側エッジよりも内側に位置している半導体記憶装置。 - 前記トランジスタのソースまたはドレイン領域上部に、シリサイド層が形成されている請求項1記載の半導体記憶装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004379735A JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
US11/311,165 US8106437B2 (en) | 2004-12-28 | 2005-12-20 | Semiconductor storage device |
CNA2005101378579A CN1819208A (zh) | 2004-12-28 | 2005-12-28 | 半导体存储装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004379735A JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006186185A JP2006186185A (ja) | 2006-07-13 |
JP2006186185A5 JP2006186185A5 (ja) | 2008-01-31 |
JP4781673B2 true JP4781673B2 (ja) | 2011-09-28 |
Family
ID=36610422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004379735A Expired - Fee Related JP4781673B2 (ja) | 2004-12-28 | 2004-12-28 | 半導体記憶装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8106437B2 (ja) |
JP (1) | JP4781673B2 (ja) |
CN (1) | CN1819208A (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008042195A (ja) * | 2006-08-02 | 2008-02-21 | Qimonda Ag | 書換え可能な不揮発性メモリセル |
DE102006036098A1 (de) * | 2006-08-02 | 2008-02-07 | Infineon Technologies Ag | Wiederprogrammierbare nichtflüchtige Speicherzelle |
CN101752381B (zh) * | 2008-12-10 | 2013-07-24 | 上海华虹Nec电子有限公司 | Otp器件结构及其制备方法 |
TWI418018B (zh) * | 2009-11-03 | 2013-12-01 | Taiwan Memory Corp | 電子裝置及其製造方法、記憶體裝置 |
JP5758729B2 (ja) * | 2011-07-27 | 2015-08-05 | ローム株式会社 | 半導体装置 |
JP2015228418A (ja) * | 2014-05-30 | 2015-12-17 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置およびその製造方法 |
US10211347B2 (en) * | 2017-06-23 | 2019-02-19 | Qualcomm Incorporated | Transcap device architecture with reduced control voltage and improved quality factor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5237528A (en) * | 1982-11-04 | 1993-08-17 | Hitachi, Ltd. | Semiconductor memory |
US4939104A (en) * | 1984-10-31 | 1990-07-03 | Texas Instruments, Incorporated | Method for forming a buried lateral contact |
JPS63258060A (ja) * | 1987-04-15 | 1988-10-25 | Nec Corp | 半導体記憶装置 |
US4958318A (en) * | 1988-07-08 | 1990-09-18 | Eliyahou Harari | Sidewall capacitor DRAM cell |
US6468855B2 (en) * | 1998-08-14 | 2002-10-22 | Monolithic System Technology, Inc. | Reduced topography DRAM cell fabricated using a modified logic process and method for operating same |
US6573548B2 (en) | 1998-08-14 | 2003-06-03 | Monolithic System Technology, Inc. | DRAM cell having a capacitor structure fabricated partially in a cavity and method for operating same |
WO2003069676A1 (fr) * | 2002-02-14 | 2003-08-21 | Matsushita Electric Industrial Co., Ltd. | Dispositif a semi-conducteurs et procede de fabrication |
US6897508B2 (en) * | 2002-05-01 | 2005-05-24 | Sundew Technologies, Llc | Integrated capacitor with enhanced capacitance density and method of fabricating same |
JP4451594B2 (ja) * | 2002-12-19 | 2010-04-14 | 株式会社ルネサステクノロジ | 半導体集積回路装置及びその製造方法 |
JP2004311853A (ja) * | 2003-04-10 | 2004-11-04 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
TWI223413B (en) * | 2003-11-11 | 2004-11-01 | United Microelectronics Corp | SRAM cell structure and manufacturing method thereof |
US7019348B2 (en) * | 2004-02-26 | 2006-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Embedded semiconductor product with dual depth isolation regions |
JP4476068B2 (ja) * | 2004-08-02 | 2010-06-09 | 株式会社椿本チエイン | ベアリングローラチェーン |
JP2006049413A (ja) | 2004-08-02 | 2006-02-16 | Fujitsu Ltd | 半導体装置及びその製造方法 |
-
2004
- 2004-12-28 JP JP2004379735A patent/JP4781673B2/ja not_active Expired - Fee Related
-
2005
- 2005-12-20 US US11/311,165 patent/US8106437B2/en not_active Expired - Fee Related
- 2005-12-28 CN CNA2005101378579A patent/CN1819208A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
US20060138512A1 (en) | 2006-06-29 |
CN1819208A (zh) | 2006-08-16 |
JP2006186185A (ja) | 2006-07-13 |
US8106437B2 (en) | 2012-01-31 |
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