CN100446225C - 具有内装芯片和两侧上的外部连接端子的基板及其制造方法 - Google Patents

具有内装芯片和两侧上的外部连接端子的基板及其制造方法 Download PDF

Info

Publication number
CN100446225C
CN100446225C CNB2005101315584A CN200510131558A CN100446225C CN 100446225 C CN100446225 C CN 100446225C CN B2005101315584 A CNB2005101315584 A CN B2005101315584A CN 200510131558 A CN200510131558 A CN 200510131558A CN 100446225 C CN100446225 C CN 100446225C
Authority
CN
China
Prior art keywords
built
substrate
semiconductor chip
external connection
resin member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005101315584A
Other languages
English (en)
Chinese (zh)
Other versions
CN1819160A (zh
Inventor
山野孝治
荒井直
町田洋弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Electric Co Ltd
Original Assignee
Shinko Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Co Ltd filed Critical Shinko Electric Co Ltd
Publication of CN1819160A publication Critical patent/CN1819160A/zh
Application granted granted Critical
Publication of CN100446225C publication Critical patent/CN100446225C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/47Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/093Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together
    • H10W70/614Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together the multiple chips being integrally enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/01Manufacture or treatment
    • H10W74/019Manufacture or treatment using temporary auxiliary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/099Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9413Dispositions of bond pads on encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H10W74/142Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed the encapsulations exposing the passive side of the semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
CNB2005101315584A 2004-10-22 2005-09-21 具有内装芯片和两侧上的外部连接端子的基板及其制造方法 Expired - Fee Related CN100446225C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004308558A JP2006120943A (ja) 2004-10-22 2004-10-22 チップ内蔵基板及びその製造方法
JP2004308558 2004-10-22

Publications (2)

Publication Number Publication Date
CN1819160A CN1819160A (zh) 2006-08-16
CN100446225C true CN100446225C (zh) 2008-12-24

Family

ID=35615238

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101315584A Expired - Fee Related CN100446225C (zh) 2004-10-22 2005-09-21 具有内装芯片和两侧上的外部连接端子的基板及其制造方法

Country Status (6)

Country Link
US (1) US7312536B2 (https=)
EP (1) EP1650798A3 (https=)
JP (1) JP2006120943A (https=)
KR (1) KR20060051422A (https=)
CN (1) CN100446225C (https=)
TW (1) TW200614900A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057749A (zh) * 2015-04-10 2016-10-26 株式会社吉帝伟士 半导体封装件及其制造方法

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428337B2 (ja) * 2005-12-02 2010-03-10 ソニー株式会社 半導体装置の製造方法
KR100770874B1 (ko) 2006-09-07 2007-10-26 삼성전자주식회사 매설된 집적회로를 구비한 다층 인쇄회로기판
KR100823699B1 (ko) * 2006-11-29 2008-04-21 삼성전자주식회사 플립칩 어셈블리 및 그 제조 방법
US8178982B2 (en) * 2006-12-30 2012-05-15 Stats Chippac Ltd. Dual molded multi-chip package system
JP2008277639A (ja) * 2007-05-02 2008-11-13 Casio Comput Co Ltd 半導体装置およびその製造方法
US9610758B2 (en) 2007-06-21 2017-04-04 General Electric Company Method of making demountable interconnect structure
US9953910B2 (en) * 2007-06-21 2018-04-24 General Electric Company Demountable interconnect structure
KR100929464B1 (ko) * 2007-12-21 2009-12-02 주식회사 동부하이텍 반도체칩, 이의 제조 방법 및 반도체칩 적층 패키지
JP4787296B2 (ja) 2008-07-18 2011-10-05 Tdk株式会社 半導体内蔵モジュール及びその製造方法
US8390083B2 (en) 2009-09-04 2013-03-05 Analog Devices, Inc. System with recessed sensing or processing elements
WO2011155638A1 (en) * 2010-06-11 2011-12-15 Nec Corporation Method of redistributing functional element
JP5578962B2 (ja) * 2010-06-24 2014-08-27 新光電気工業株式会社 配線基板
US9407997B2 (en) 2010-10-12 2016-08-02 Invensense, Inc. Microphone package with embedded ASIC
JP2012134270A (ja) * 2010-12-21 2012-07-12 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2012256675A (ja) * 2011-06-08 2012-12-27 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びその製造方法
US9093416B2 (en) * 2011-11-28 2015-07-28 Infineon Technologies Ag Chip-package and a method for forming a chip-package
CN103137613B (zh) * 2011-11-29 2017-07-14 华进半导体封装先导技术研发中心有限公司 制备有源芯片封装基板的方法
DE112011105892T5 (de) * 2011-11-29 2014-09-11 Institute of Microelectronics, Chinese Academy of Sciences Verpackungssubstrat für einen aktiven Chip und Verfahren zu dessen Herstellung
CN104576883B (zh) 2013-10-29 2018-11-16 普因特工程有限公司 芯片安装用阵列基板及其制造方法
US9881962B2 (en) * 2013-12-10 2018-01-30 Sony Corporation Semiconductor apparatus, solid state imaging device, imaging apparatus and electronic equipment, and manufacturing method thereof
US9673171B1 (en) 2014-03-26 2017-06-06 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with coreless substrate and method of manufacture thereof
DE102014118462A1 (de) 2014-12-11 2016-06-16 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Semiflexible Leiterplatte mit eingebetteter Komponente
DE102014118464A1 (de) 2014-12-11 2016-06-16 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Leiterplatte mit einem asymmetrischen Schichtenaufbau
US9666558B2 (en) 2015-06-29 2017-05-30 Point Engineering Co., Ltd. Substrate for mounting a chip and chip package using the substrate
US10068853B2 (en) * 2016-05-05 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out package and method of fabricating the same
JP6705501B2 (ja) * 2016-05-25 2020-06-03 日立化成株式会社 封止構造体の製造方法
WO2019004264A1 (ja) 2017-06-30 2019-01-03 株式会社村田製作所 電子部品モジュール及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656250A (en) * 1994-06-27 1997-08-12 Jiro Hiraishi, Director-General, Agency Of Industrial Science And Technology Three-dimensional network structure comprising spherical silica particles and method of producing same
US6166433A (en) * 1998-03-26 2000-12-26 Fujitsu Limited Resin molded semiconductor device and method of manufacturing semiconductor package
US6255739B1 (en) * 1998-12-02 2001-07-03 Kabushiki Kaisha Toshiba Semiconductor device
US20040113215A1 (en) * 2002-07-31 2004-06-17 Kyocera Corporation Surface acoustic wave device and method for manufacturing same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965277A (en) 1972-05-09 1976-06-22 Massachusetts Institute Of Technology Photoformed plated interconnection of embedded integrated circuit chips
US6348728B1 (en) 2000-01-28 2002-02-19 Fujitsu Limited Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer
US20020110956A1 (en) 2000-12-19 2002-08-15 Takashi Kumamoto Chip lead frames
TW511405B (en) * 2000-12-27 2002-11-21 Matsushita Electric Industrial Co Ltd Device built-in module and manufacturing method thereof
CA2350747C (en) * 2001-06-15 2005-08-16 Ibm Canada Limited-Ibm Canada Limitee Improved transfer molding of integrated circuit packages
JP3910045B2 (ja) * 2001-11-05 2007-04-25 シャープ株式会社 電子部品内装配線板の製造方法
US7394663B2 (en) 2003-02-18 2008-07-01 Matsushita Electric Industrial Co., Ltd. Electronic component built-in module and method of manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656250A (en) * 1994-06-27 1997-08-12 Jiro Hiraishi, Director-General, Agency Of Industrial Science And Technology Three-dimensional network structure comprising spherical silica particles and method of producing same
US6166433A (en) * 1998-03-26 2000-12-26 Fujitsu Limited Resin molded semiconductor device and method of manufacturing semiconductor package
US6255739B1 (en) * 1998-12-02 2001-07-03 Kabushiki Kaisha Toshiba Semiconductor device
US20040113215A1 (en) * 2002-07-31 2004-06-17 Kyocera Corporation Surface acoustic wave device and method for manufacturing same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057749A (zh) * 2015-04-10 2016-10-26 株式会社吉帝伟士 半导体封装件及其制造方法

Also Published As

Publication number Publication date
KR20060051422A (ko) 2006-05-19
US7312536B2 (en) 2007-12-25
EP1650798A3 (en) 2009-03-11
US20060087045A1 (en) 2006-04-27
TW200614900A (en) 2006-05-01
EP1650798A2 (en) 2006-04-26
CN1819160A (zh) 2006-08-16
JP2006120943A (ja) 2006-05-11

Similar Documents

Publication Publication Date Title
CN100446225C (zh) 具有内装芯片和两侧上的外部连接端子的基板及其制造方法
US7964446B2 (en) Semiconductor device and method of manufacturing the same
CN101410973B (zh) 晶片级芯片尺寸封装及其制造和使用方法
JP4534062B2 (ja) 半導体装置
CN103811437B (zh) 有直接接触散热片的微电子封装及其制造方法
US7038316B2 (en) Bumpless die and heat spreader lid module bonded to bumped die carrier
TW201112370A (en) Semiconductor flip chip package
CN101325188A (zh) 具双面增层之晶圆级半导体封装及其方法
TW200832644A (en) Water level package with good CTE performance and method of the same
CN101765913A (zh) 底部粗糙度减小的半导体部件的应力缓冲元件
JPH0855938A (ja) 半導体装置及びその製造方法
TWI242855B (en) Chip package structure, package substrate and manufacturing method thereof
US20080157345A1 (en) Curved heat spreader design for electronic assemblies
CN100399551C (zh) 元件搭载基板
KR100691062B1 (ko) 반도체 장치, 반도체 칩, 반도체 장치의 제조 방법 및전자기기
CN101335265A (zh) 具有晶粒功能之半导体封装结构
KR100659447B1 (ko) 반도체 칩, 반도체 장치, 반도체 장치의 제조 방법 및전자기기
US8633601B2 (en) Interconnect assemblies and methods of making and using same
CN100380658C (zh) 半导体封装件及其制造方法
KR20080017162A (ko) 솔더링 플럭스 및 언더 필 수지층을 구비하는 반도체 소자실장 구조체 및 반도체 소자 실장 방법
JP2005268669A (ja) 半導体装置の製造方法
JPH05211256A (ja) 半導体装置
KR100876083B1 (ko) 반도체 칩 패키지 및 이를 포함하는 반도체 패키지
JPS63293930A (ja) 半導体装置における電極
TWI284949B (en) Bumped structure and its forming method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081224

Termination date: 20190921

CF01 Termination of patent right due to non-payment of annual fee