TW200614900A - A substrate having a built-in chip and external connection terminals on both sides and a method for manufacturing the same - Google Patents

A substrate having a built-in chip and external connection terminals on both sides and a method for manufacturing the same

Info

Publication number
TW200614900A
TW200614900A TW094131451A TW94131451A TW200614900A TW 200614900 A TW200614900 A TW 200614900A TW 094131451 A TW094131451 A TW 094131451A TW 94131451 A TW94131451 A TW 94131451A TW 200614900 A TW200614900 A TW 200614900A
Authority
TW
Taiwan
Prior art keywords
built
external connection
connection terminals
substrate
chip
Prior art date
Application number
TW094131451A
Other languages
English (en)
Inventor
Takaharu Yamano
Tadashi Arai
Yoshihiro Machida
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200614900A publication Critical patent/TW200614900A/zh

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293Organic, e.g. plastic
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568Temporary substrate used as encapsulation process aid
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    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
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    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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    • H01L23/538Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5389Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW094131451A 2004-10-22 2005-09-13 A substrate having a built-in chip and external connection terminals on both sides and a method for manufacturing the same TW200614900A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004308558A JP2006120943A (ja) 2004-10-22 2004-10-22 チップ内蔵基板及びその製造方法

Publications (1)

Publication Number Publication Date
TW200614900A true TW200614900A (en) 2006-05-01

Family

ID=35615238

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Application Number Title Priority Date Filing Date
TW094131451A TW200614900A (en) 2004-10-22 2005-09-13 A substrate having a built-in chip and external connection terminals on both sides and a method for manufacturing the same

Country Status (6)

Country Link
US (1) US7312536B2 (zh)
EP (1) EP1650798A3 (zh)
JP (1) JP2006120943A (zh)
KR (1) KR20060051422A (zh)
CN (1) CN100446225C (zh)
TW (1) TW200614900A (zh)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4428337B2 (ja) * 2005-12-02 2010-03-10 ソニー株式会社 半導体装置の製造方法
KR100770874B1 (ko) 2006-09-07 2007-10-26 삼성전자주식회사 매설된 집적회로를 구비한 다층 인쇄회로기판
KR100823699B1 (ko) * 2006-11-29 2008-04-21 삼성전자주식회사 플립칩 어셈블리 및 그 제조 방법
US8178982B2 (en) 2006-12-30 2012-05-15 Stats Chippac Ltd. Dual molded multi-chip package system
JP2008277639A (ja) * 2007-05-02 2008-11-13 Casio Comput Co Ltd 半導体装置およびその製造方法
US9610758B2 (en) * 2007-06-21 2017-04-04 General Electric Company Method of making demountable interconnect structure
US9953910B2 (en) 2007-06-21 2018-04-24 General Electric Company Demountable interconnect structure
KR100929464B1 (ko) * 2007-12-21 2009-12-02 주식회사 동부하이텍 반도체칩, 이의 제조 방법 및 반도체칩 적층 패키지
JP4787296B2 (ja) * 2008-07-18 2011-10-05 Tdk株式会社 半導体内蔵モジュール及びその製造方法
US8390083B2 (en) * 2009-09-04 2013-03-05 Analog Devices, Inc. System with recessed sensing or processing elements
JP2013528318A (ja) * 2010-06-11 2013-07-08 日本電気株式会社 機能素子の再配線方法
JP5578962B2 (ja) * 2010-06-24 2014-08-27 新光電気工業株式会社 配線基板
WO2012051340A1 (en) 2010-10-12 2012-04-19 Analog Devices, Inc. Microphone package with embedded asic
JP2012134270A (ja) * 2010-12-21 2012-07-12 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
JP2012256675A (ja) * 2011-06-08 2012-12-27 Shinko Electric Ind Co Ltd 配線基板、半導体装置及びその製造方法
US9093416B2 (en) * 2011-11-28 2015-07-28 Infineon Technologies Ag Chip-package and a method for forming a chip-package
DE112011105892T5 (de) 2011-11-29 2014-09-11 Institute of Microelectronics, Chinese Academy of Sciences Verpackungssubstrat für einen aktiven Chip und Verfahren zu dessen Herstellung
CN103137613B (zh) * 2011-11-29 2017-07-14 华进半导体封装先导技术研发中心有限公司 制备有源芯片封装基板的方法
US9847462B2 (en) 2013-10-29 2017-12-19 Point Engineering Co., Ltd. Array substrate for mounting chip and method for manufacturing the same
WO2015087705A1 (ja) * 2013-12-10 2015-06-18 ソニー株式会社 半導体装置、固体撮像素子、撮像装置および電子機器、並びにそれらの製造方法
US9673171B1 (en) 2014-03-26 2017-06-06 STATS ChipPAC Pte. Ltd. Integrated circuit packaging system with coreless substrate and method of manufacture thereof
DE102014118464A1 (de) * 2014-12-11 2016-06-16 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Leiterplatte mit einem asymmetrischen Schichtenaufbau
DE102014118462A1 (de) 2014-12-11 2016-06-16 At&S Austria Technologie & Systemtechnik Aktiengesellschaft Semiflexible Leiterplatte mit eingebetteter Komponente
JP6430883B2 (ja) * 2015-04-10 2018-11-28 株式会社ジェイデバイス 半導体パッケージ及びその製造方法
US9666558B2 (en) 2015-06-29 2017-05-30 Point Engineering Co., Ltd. Substrate for mounting a chip and chip package using the substrate
US10068853B2 (en) * 2016-05-05 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated fan-out package and method of fabricating the same
WO2017203622A1 (ja) * 2016-05-25 2017-11-30 日立化成株式会社 封止構造体及びその製造方法、並びに、封止材
CN110800102B (zh) * 2017-06-30 2023-08-15 株式会社村田制作所 电子部件模块及其制造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3965277A (en) * 1972-05-09 1976-06-22 Massachusetts Institute Of Technology Photoformed plated interconnection of embedded integrated circuit chips
JP2580537B2 (ja) * 1994-06-27 1997-02-12 工業技術院長 シリカ球状粒子からなる三次元網状構造体
US6166433A (en) * 1998-03-26 2000-12-26 Fujitsu Limited Resin molded semiconductor device and method of manufacturing semiconductor package
JP2000228467A (ja) * 1998-12-02 2000-08-15 Toshiba Corp 半導体封止用樹脂組成物及び半導体装置とその製造方法
US6348728B1 (en) 2000-01-28 2002-02-19 Fujitsu Limited Semiconductor device having a plurality of semiconductor elements interconnected by a redistribution layer
US20020110956A1 (en) * 2000-12-19 2002-08-15 Takashi Kumamoto Chip lead frames
TW511405B (en) * 2000-12-27 2002-11-21 Matsushita Electric Ind Co Ltd Device built-in module and manufacturing method thereof
CA2350747C (en) * 2001-06-15 2005-08-16 Ibm Canada Limited-Ibm Canada Limitee Improved transfer molding of integrated circuit packages
JP3910045B2 (ja) * 2001-11-05 2007-04-25 シャープ株式会社 電子部品内装配線板の製造方法
US7154206B2 (en) * 2002-07-31 2006-12-26 Kyocera Corporation Surface acoustic wave device and method for manufacturing same
US7394663B2 (en) * 2003-02-18 2008-07-01 Matsushita Electric Industrial Co., Ltd. Electronic component built-in module and method of manufacturing the same

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US7312536B2 (en) 2007-12-25
EP1650798A2 (en) 2006-04-26
JP2006120943A (ja) 2006-05-11
CN100446225C (zh) 2008-12-24
US20060087045A1 (en) 2006-04-27
EP1650798A3 (en) 2009-03-11
KR20060051422A (ko) 2006-05-19

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