CN100442511C - 半导体器件及制造该半导体器件的方法 - Google Patents
半导体器件及制造该半导体器件的方法 Download PDFInfo
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- CN100442511C CN100442511C CNB2005100746963A CN200510074696A CN100442511C CN 100442511 C CN100442511 C CN 100442511C CN B2005100746963 A CNB2005100746963 A CN B2005100746963A CN 200510074696 A CN200510074696 A CN 200510074696A CN 100442511 C CN100442511 C CN 100442511C
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- plugs
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823475—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type interconnection or wiring or contact manufacturing related aspects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/09—Manufacture or treatment with simultaneous manufacture of the peripheral circuit region and memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/48—Data lines or contacts therefor
- H10B12/485—Bit line contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/50—Peripheral circuit region structures
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004162340 | 2004-05-31 | ||
JP2004162340A JP4897201B2 (ja) | 2004-05-31 | 2004-05-31 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1705128A CN1705128A (zh) | 2005-12-07 |
CN100442511C true CN100442511C (zh) | 2008-12-10 |
Family
ID=35425898
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100746963A Expired - Fee Related CN100442511C (zh) | 2004-05-31 | 2005-05-30 | 半导体器件及制造该半导体器件的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7432597B2 (zh) |
JP (1) | JP4897201B2 (zh) |
CN (1) | CN100442511C (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7271489B2 (en) | 2003-10-15 | 2007-09-18 | Megica Corporation | Post passivation interconnection schemes on top of the IC chips |
US7485968B2 (en) * | 2005-08-11 | 2009-02-03 | Ziptronix, Inc. | 3D IC method and device |
US7585722B2 (en) * | 2006-01-10 | 2009-09-08 | International Business Machines Corporation | Integrated circuit comb capacitor |
KR100723524B1 (ko) * | 2006-01-27 | 2007-05-30 | 삼성전자주식회사 | 금속 화학기계적 연마과정에서 절연막 침식이 감소된반도체 소자 및 그의 제조방법 |
JP2009231772A (ja) * | 2008-03-25 | 2009-10-08 | Nec Electronics Corp | 半導体装置の製造方法および半導体装置 |
JP5261105B2 (ja) | 2008-09-26 | 2013-08-14 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101094380B1 (ko) | 2008-12-29 | 2011-12-15 | 주식회사 하이닉스반도체 | 금속콘택을 갖는 반도체장치 제조 방법 |
JP2010161173A (ja) * | 2009-01-07 | 2010-07-22 | Renesas Electronics Corp | 半導体記憶装置 |
JP5705610B2 (ja) * | 2010-08-05 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR101767107B1 (ko) * | 2011-01-31 | 2017-08-10 | 삼성전자주식회사 | 반도체 장치의 캐패시터 |
US9953941B2 (en) | 2015-08-25 | 2018-04-24 | Invensas Bonding Technologies, Inc. | Conductive barrier direct hybrid bonding |
CN106611763B (zh) * | 2015-10-21 | 2019-06-14 | 华邦电子股份有限公司 | 存储器装置及其制造方法 |
KR102394250B1 (ko) * | 2016-01-06 | 2022-05-03 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10032713B2 (en) * | 2016-01-27 | 2018-07-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure and method for forming the same |
US10825765B2 (en) * | 2018-07-26 | 2020-11-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
US11133321B2 (en) * | 2019-09-26 | 2021-09-28 | Nanya Technology Corporation | Semiconductor device and method of fabricating the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020024140A1 (en) * | 2000-03-31 | 2002-02-28 | Takashi Nakajima | Semiconductor device |
US6461911B2 (en) * | 2000-05-26 | 2002-10-08 | Samsung Electronics Co., Ltd. | Semiconductor memory device and fabricating method thereof |
US20020195632A1 (en) * | 2001-06-22 | 2002-12-26 | Ken Inoue | Semiconductor memory device |
US20030134490A1 (en) * | 2002-01-11 | 2003-07-17 | Tadashi Inuzuka | Method of fabricating semiconductor device on semiconductor wafer |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1997019468A1 (fr) * | 1995-11-20 | 1997-05-29 | Hitachi, Ltd. | Dispositif de stockage a semi-conducteur, et processus de fabrication de ce dispositif |
TW377495B (en) * | 1996-10-04 | 1999-12-21 | Hitachi Ltd | Method of manufacturing semiconductor memory cells and the same apparatus |
JPH1117129A (ja) * | 1997-06-25 | 1999-01-22 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JPH11243180A (ja) * | 1998-02-25 | 1999-09-07 | Sony Corp | 半導体装置の製造方法 |
JP2000156480A (ja) * | 1998-09-03 | 2000-06-06 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JP4667551B2 (ja) * | 1999-10-19 | 2011-04-13 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
EP1146556A1 (en) * | 2000-04-07 | 2001-10-17 | Lucent Technologies Inc. | A process for fabricating an integrated ciruit that has embedded dram and logic devices |
JP2002289817A (ja) | 2001-03-27 | 2002-10-04 | Toshiba Corp | 半導体集積回路装置及びその製造方法 |
JP2003060174A (ja) * | 2001-08-10 | 2003-02-28 | Seiko Epson Corp | 半導体集積回路の製造方法及びレチクル及び半導体集積回路装置 |
JP2004014770A (ja) * | 2002-06-06 | 2004-01-15 | Renesas Technology Corp | 半導体装置 |
-
2004
- 2004-05-31 JP JP2004162340A patent/JP4897201B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-27 US US11/138,452 patent/US7432597B2/en not_active Expired - Fee Related
- 2005-05-30 CN CNB2005100746963A patent/CN100442511C/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020024140A1 (en) * | 2000-03-31 | 2002-02-28 | Takashi Nakajima | Semiconductor device |
US6461911B2 (en) * | 2000-05-26 | 2002-10-08 | Samsung Electronics Co., Ltd. | Semiconductor memory device and fabricating method thereof |
US20020195632A1 (en) * | 2001-06-22 | 2002-12-26 | Ken Inoue | Semiconductor memory device |
US20030134490A1 (en) * | 2002-01-11 | 2003-07-17 | Tadashi Inuzuka | Method of fabricating semiconductor device on semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
CN1705128A (zh) | 2005-12-07 |
US20050266636A1 (en) | 2005-12-01 |
JP4897201B2 (ja) | 2012-03-14 |
US7432597B2 (en) | 2008-10-07 |
JP2005347335A (ja) | 2005-12-15 |
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C14 | Grant of patent or utility model | ||
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C56 | Change in the name or address of the patentee |
Owner name: RENESAS ELECTRONICS CORPORATION Free format text: FORMER NAME: NEC CORP. |
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Address after: Kanagawa Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: NEC Corp. |
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CP02 | Change in the address of a patent holder | ||
CP02 | Change in the address of a patent holder |
Address after: Tokyo, Japan, Japan Patentee after: Renesas Electronics Corporation Address before: Kanagawa Patentee before: Renesas Electronics Corporation |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081210 Termination date: 20190530 |