CN100438052C - 辐射图像摄像设备 - Google Patents

辐射图像摄像设备 Download PDF

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Publication number
CN100438052C
CN100438052C CNB2004800040785A CN200480004078A CN100438052C CN 100438052 C CN100438052 C CN 100438052C CN B2004800040785 A CNB2004800040785 A CN B2004800040785A CN 200480004078 A CN200480004078 A CN 200480004078A CN 100438052 C CN100438052 C CN 100438052C
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CN
China
Prior art keywords
thin film
film transistor
electrode
film transistors
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800040785A
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English (en)
Chinese (zh)
Other versions
CN1748315A (zh
Inventor
望月千织
森下正和
渡边实
石井孝昌
野村庆一
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Canon Inc
Original Assignee
Canon Inc
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Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of CN1748315A publication Critical patent/CN1748315A/zh
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Publication of CN100438052C publication Critical patent/CN100438052C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
CNB2004800040785A 2003-02-14 2004-02-10 辐射图像摄像设备 Expired - Fee Related CN100438052C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP036832/2003 2003-02-14
JP2003036832A JP2004265932A (ja) 2003-02-14 2003-02-14 放射線撮像装置
JP036833/2003 2003-02-14

Publications (2)

Publication Number Publication Date
CN1748315A CN1748315A (zh) 2006-03-15
CN100438052C true CN100438052C (zh) 2008-11-26

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ID=33112047

Family Applications (1)

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CNB2004800040785A Expired - Fee Related CN100438052C (zh) 2003-02-14 2004-02-10 辐射图像摄像设备

Country Status (2)

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JP (1) JP2004265932A (enExample)
CN (1) CN100438052C (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4480147B2 (ja) 2004-09-13 2010-06-16 キヤノン株式会社 撮像装置およびその制御方法
JP5159065B2 (ja) * 2005-08-31 2013-03-06 キヤノン株式会社 放射線検出装置、放射線撮像装置および放射線撮像システム
JP2008108917A (ja) * 2006-10-25 2008-05-08 Sony Corp 固体撮像装置及び電子機器
JP5280671B2 (ja) * 2006-12-20 2013-09-04 富士フイルム株式会社 画像検出器および放射線検出システム
KR101034474B1 (ko) * 2009-01-21 2011-05-17 (주)세현 엑스레이 디텍터 및 이의 제조방법
KR101034463B1 (ko) * 2009-01-21 2011-06-16 주식회사 아트라임 엑스레이 디텍터 및 이의 제조방법
CN102629610A (zh) * 2012-03-27 2012-08-08 北京京东方光电科技有限公司 一种x射线检测装置的阵列基板及其制造方法
CN102664184B (zh) * 2012-03-27 2014-08-06 北京京东方光电科技有限公司 一种x射线检测装置的阵列基板的制造方法
JP2013247270A (ja) * 2012-05-28 2013-12-09 Sony Corp 撮像装置および撮像表示システム
CN102881701B (zh) * 2012-09-19 2015-01-07 北京京东方光电科技有限公司 一种tft平板x射线传感器及其制造方法
CN103259983B (zh) * 2013-03-13 2017-02-08 上海奕瑞光电子科技有限公司 一种平板图像传感器
JP6463136B2 (ja) * 2014-02-14 2019-01-30 キヤノン株式会社 放射線検出装置及び放射線検出システム
KR102246424B1 (ko) 2016-05-31 2021-04-30 소니 세미컨덕터 솔루션즈 가부시키가이샤 촬상 장치 및 촬상 방법, 카메라 모듈, 및 전자 기기

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012866A (ja) * 1998-06-22 2000-01-14 Toshiba Corp 撮像装置
JP2000241557A (ja) * 1999-02-24 2000-09-08 Toshiba Corp Ｘ線撮像装置
US20020084419A1 (en) * 2000-12-29 2002-07-04 Choo Kyo Seop X-ray detecting device and fabricating method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6286855A (ja) * 1985-10-14 1987-04-21 Fuji Photo Film Co Ltd 放射線用固体撮像素子
JPS63172470A (ja) * 1987-01-12 1988-07-16 Fujitsu Ltd 薄膜トランジスタ
JPH01220862A (ja) * 1988-02-29 1989-09-04 Seiko Epson Corp 固体撮像素子
JPH02260460A (ja) * 1989-03-31 1990-10-23 Casio Comput Co Ltd 薄膜トランジスタ
JPH03185840A (ja) * 1989-12-15 1991-08-13 Casio Comput Co Ltd 薄膜トランジスタ
JP2805035B2 (ja) * 1990-05-29 1998-09-30 株式会社 半導体エネルギー研究所 薄膜トランジスタ
JPH10313122A (ja) * 1998-05-27 1998-11-24 Semiconductor Energy Lab Co Ltd 薄膜トランジスタ
JP2001308306A (ja) * 2000-04-21 2001-11-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその駆動方法
JP3589954B2 (ja) * 2000-07-04 2004-11-17 シャープ株式会社 電磁波検出器、画像検出器、および電磁波検出器の製造方法
JP2002124655A (ja) * 2000-10-17 2002-04-26 Canon Inc 電磁波電気信号変換システム及びイメージセンサ
JP2002289824A (ja) * 2001-03-28 2002-10-04 Canon Inc 光検出装置、放射線検出装置および放射線撮像システム
JP2002303673A (ja) * 2001-04-03 2002-10-18 Canon Inc 放射線検出装置及びそれを用いた放射線撮像システム
JP2003023144A (ja) * 2001-07-06 2003-01-24 Semiconductor Energy Lab Co Ltd 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012866A (ja) * 1998-06-22 2000-01-14 Toshiba Corp 撮像装置
JP2000241557A (ja) * 1999-02-24 2000-09-08 Toshiba Corp Ｘ線撮像装置
US20020084419A1 (en) * 2000-12-29 2002-07-04 Choo Kyo Seop X-ray detecting device and fabricating method thereof

Also Published As

Publication number Publication date
CN1748315A (zh) 2006-03-15
JP2004265932A (ja) 2004-09-24

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