CN100407373C - 流体控制装置和热处理装置 - Google Patents

流体控制装置和热处理装置 Download PDF

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Publication number
CN100407373C
CN100407373C CN038000679A CN03800067A CN100407373C CN 100407373 C CN100407373 C CN 100407373C CN 038000679 A CN038000679 A CN 038000679A CN 03800067 A CN03800067 A CN 03800067A CN 100407373 C CN100407373 C CN 100407373C
Authority
CN
China
Prior art keywords
gas
triple valve
gas piping
hole
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN038000679A
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English (en)
Chinese (zh)
Other versions
CN1586001A (zh
Inventor
冈部庸之
大仓成幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1586001A publication Critical patent/CN1586001A/zh
Application granted granted Critical
Publication of CN100407373C publication Critical patent/CN100407373C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00—Pipe-line systems
    • F17D1/02—Pipe-line systems for gases or vapours
    • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
CN038000679A 2003-02-07 2003-02-07 流体控制装置和热处理装置 Expired - Fee Related CN100407373C (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2003/001338 WO2004070801A1 (ja) 2003-02-07 2003-02-07 流体制御装置および熱処理装置

Publications (2)

Publication Number Publication Date
CN1586001A CN1586001A (zh) 2005-02-23
CN100407373C true CN100407373C (zh) 2008-07-30

Family

ID=32843987

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038000679A Expired - Fee Related CN100407373C (zh) 2003-02-07 2003-02-07 流体控制装置和热处理装置

Country Status (3)

Country Link
KR (1) KR100929713B1 (ko)
CN (1) CN100407373C (ko)
WO (1) WO2004070801A1 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090280029A1 (en) * 2005-05-11 2009-11-12 Youshu Kang High Throughput Materials-Processing System
CN101175560B (zh) * 2005-05-11 2012-12-26 亚申科技研发中心（上海）有限公司 高通量物质处理系统
JP4355724B2 (ja) * 2006-12-25 2009-11-04 シーケーディ株式会社 ガス集積ユニット
JP5459895B2 (ja) * 2007-10-15 2014-04-02 Ｃｋｄ株式会社 ガス分流供給ユニット
JP5216632B2 (ja) * 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
US9188990B2 (en) 2011-10-05 2015-11-17 Horiba Stec, Co., Ltd. Fluid mechanism, support member constituting fluid mechanism and fluid control system
JP5833403B2 (ja) * 2011-10-06 2015-12-16 株式会社堀場エステック 流体機構及び該流体機構を構成する支持部材
CN103382949A (zh) * 2013-07-10 2013-11-06 燕山大学 多功能可扩展节能型液压集成回路
CN104406050A (zh) * 2014-11-07 2015-03-11 合肥大安印刷有限责任公司 工作气体分流系统
CN114423884A (zh) * 2019-08-12 2022-04-29 Meo工程股份有限公司 用于前体气体喷射的方法和装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135207A (ja) * 1993-11-11 1995-05-23 Oki Electric Ind Co Ltd 半導体装置の製造方法及びその製造装置
JPH112400A (ja) * 1997-06-11 1999-01-06 Fujikin:Kk 混合ガス供給装置
JP2000322130A (ja) * 1999-05-10 2000-11-24 Fujikin Inc フローファクターによる流体可変型流量制御方法およびその装置
US6360762B2 (en) * 1999-04-22 2002-03-26 Fujikin Incorporated Method for feeding gases for use in semiconductor manufacturing

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472282B2 (ja) * 2001-08-30 2003-12-02 東京エレクトロン株式会社 流体制御装置及び熱処理装置と流体制御方法
JP4554853B2 (ja) * 2001-09-17 2010-09-29 シーケーディ株式会社 ガス供給集積弁

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07135207A (ja) * 1993-11-11 1995-05-23 Oki Electric Ind Co Ltd 半導体装置の製造方法及びその製造装置
JPH112400A (ja) * 1997-06-11 1999-01-06 Fujikin:Kk 混合ガス供給装置
US6360762B2 (en) * 1999-04-22 2002-03-26 Fujikin Incorporated Method for feeding gases for use in semiconductor manufacturing
JP2000322130A (ja) * 1999-05-10 2000-11-24 Fujikin Inc フローファクターによる流体可変型流量制御方法およびその装置

Also Published As

Publication number Publication date
WO2004070801A1 (ja) 2004-08-19
KR20050089894A (ko) 2005-09-09
KR100929713B1 (ko) 2009-12-03
CN1586001A (zh) 2005-02-23

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GR01 Patent grant
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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080730

Termination date: 20140207