Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45557—Pulsed pressure or control pressure
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
  • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
  • F17D—PIPE-LINE SYSTEMS; PIPE-LINES
  • F17D1/00—Pipe-line systems
  • F17D1/02—Pipe-line systems for gases or vapours
  • F17D1/04—Pipe-line systems for gases or vapours for distribution of gas

Definitions

• the present invention relates to a fluid control device and a heat treatment device including the fluid control device.
• a film is formed on a semiconductor device using a combination * of a plurality of types of gases in a film forming process.
• various types of gases eg, H 2 , ⁇ 2,
• FIG. 10 is a system diagram of a conventional gas supply system that supplies a plurality of types of gases into a reaction processing furnace of a semiconductor manufacturing apparatus.
• the gas supply system is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line P for supplying a purge gas.
• Each of the processing gas lines a to d is provided with a flow controller 1 such as a mass flow controller.
• a flow controller 1 such as a mass flow controller.
• a switching valve 2 On the upstream side of the flow controller 1, a switching valve 2, a filter 3, a pressure regulator 4, a pressure sensor 5, and a control valve 2a are provided.
• a branch line p branched from the purge gas line p, is connected to the primary side of the flow controller 1.
• one gas line is provided for one kind of gas, and one flow controller is provided for each gas line. That is, in order to supply various types of gases, a number of gas lines and flow controllers corresponding to the number of gas types are used. This leads to problems such as an increase in the cost and footprint of the gas supply system.
• Japanese Patent Publication Japanese Patent Application Laid-Open Publication No. 2000-0-323464 discloses that a single flow controller 1 is shared by a plurality of gas supply lines a, b, and c as shown in FIG.
• a gas supply system is disclosed.
• the gas supply system shown in Fig. 11 pumps different gases.
• a plurality of processing gas lines a to d for supplying the same and a purge gas line p for supplying a purge gas p.
• a switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9 are provided in each of the gas lines a to d.
• the gas line a is provided with a flow controller 6 such as a mass storage controller shared by the gas lines a to c.
• the gas line d is provided with a dedicated flow controller 6.
• a line branching from the purge gas line p: p ′ is connected to the primary side of each flow controller 6.
• each gas line ac is provided with a switching valve 7, a filter 8, a pressure regulator 10 and a pressure sensor 9, so that the system can be sufficiently miniaturized. Not achieved. Disclosure of the invention
• the present invention provides a first area in which a flow rate control means is arranged, and at least one of a pressure adjusting means and a pressure monitoring means which is located on the upstream side of the first area. And a plurality of connection means provided upstream of the second area of the gas line and capable of connecting a fluid supply source to the gas line.
• a fluid control device is provided.
• the gas line includes a first portion including the first and second regions, and a second portion extending from an upstream end of the first portion in a direction orthogonal to the first portion.
• the plurality of connection means are provided in the second portion.
• the present invention also provides a plurality of gas lines extending in a first direction parallel to each other at least on a first plane, wherein each of the plurality of gas lines has a flow control A first area in which the means are arranged, and a second area which is located on the upstream side of the first area and in which at least one of the pressure adjusting means and the pressure monitoring means is arranged.
• a plurality of gas lines, and a plurality of connection means provided on at least one gas line of the plurality of gas lines, to which a fluid supply source can be connected.
• the gas line includes a first portion including the first region and the second region and extending in the first direction on the first plane, and a first portion extending from an upstream end of the first portion.
• a second portion extending on a second plane orthogonal to the first plane in a second direction orthogonal to the first direction, wherein the plurality of connecting means are connected to the second portion;
• Provided is a fluid control device.
• the connection means includes a plurality of three-way valves provided in the gas line.
• each said three-way valve has a first, a second and a third port respectively, the first port of each said three-way valve being adapted to be connected to a fluid supply, respectively.
• the second port of the upstream three-way valve among the three-way valves adjacent to each other is connected to the third port of the downstream three-way valve, and the third port of the most downstream three-way valve is connected to the third port.
• the purge gas is supplied to the second port of the three-way valve, which is connected to the second region of the gas line and is the most upstream.
• the present invention provides a heat treatment apparatus including a fluid control device having the above-described configuration, and a reaction processing furnace to which a fluid is supplied via the fluid control device.
• FIG. 1 is a system diagram showing one embodiment of a fluid control device according to the present invention.
• FIG. 2 is a cross-sectional view illustrating a configuration of a gas line to which a plurality of gas supply sources are connected in the fluid control device illustrated in FIG. 1, and is a diagram illustrating a state in which a processing gas is passed through the gas line.
• FIG. 3 is a front view of the gas line shown in FIG. 2 as viewed from the direction of arrow III.
• FIG. 4 is the same cross-sectional view as FIG. 2 and shows a state in which a purge gas is passed through a gas line.
• FIG. 5 is a front view of the gas line shown in FIG. 4 as viewed from the direction of arrow V.
• FIG. 6 is a view showing another embodiment of the gas line shown in FIG. 2, and is a view showing a state in which the processing gas is passed through the gas line.
• FIG. 7 is a diagram showing a cross section taken along line VII-VII of FIG.
• FIG. 8 is the same cross-sectional view as FIG. 6, and shows a state in which a purge gas is passed through a gas line.
• FIG. 9 is a diagram showing a cross section taken along line IX-IX of FIG.
• FIG. 10 is a schematic system diagram showing a conventional gas supply system.
• FIG. 11 is a schematic system diagram showing another conventional gas supply system. Description of the preferred embodiment
• FIG. 1 is a system diagram showing an embodiment of a heat treatment apparatus provided with a fluid control device according to the present invention.
• the heat treatment apparatus includes a gas supply system including a fluid control device 11, and a reaction processing furnace 32.
• the reaction processing furnace 32 is for accommodating a substrate and subjecting the substrate to an oxidation treatment or a heat treatment such as a CVD process.
• a known suitable furnace can be used.
• the fluid control device 11 includes a plurality of equally spaced gas lines 12, 13, and 23 for supplying gas to the reaction processing furnace 32.
• Each gas line extends in a first vertical plane that extends generally vertically.
• a leftmost line 12 is a purge gas line for supplying a purge gas P such as N 2 .
• the purge gas line 12 has a gas supply port 12a, a manual valve 12b, a filter 12c, a pressure regulator 12d, a pressure sensor 12e, a control valve 12f a flow controller 1. 2 g and the fill 12h are arranged in this order from the upstream side.
• Gas line 1 3 is the process gas line for supplying a plurality of types of processing gases (e.g., H 2, 0 2, N 2, S i H , etc.).
• the processing gas line 13 has a flow control system region (first region) in which the flow controller 13 g is provided, and a processing gas line 13 is provided upstream of the flow controller.
• a pressure control system region 14 (second region).
• the manual valve 13b, fill 13c, pressure A regulator 13d, a pressure sensor 13e, a control valve 13f, a filter 13h and a control valve 13i are provided.
• a plurality of gas supply sources A, B, and C are connected to the upstream end of the gas line 13.
• the gas line 13 extending in the vertical direction changes its direction by approximately 90 degrees at the lower end which is the upstream end thereof, and extends in the direction orthogonal to the first vertical plane.
• the horizontal extension of the gas line 13 is referred to as an extension 15 of the gas line 13.
• the vertically extending portion and the extending portion 15 of the gas line 13 are located in a second vertical plane orthogonal to the first vertical plane and extending in the vertical direction.
• the first ports 17 a, 18 a, 19 a of the directional valves 17, 18, 19 are gas supply pipes 16 a, 1, respectively connected to the gas sources A, B, C 6 b and 16 c are connected to each other.
• the second and third ports 18b and 18c of the three-way valve 18 are connected to the third port 17c of the three-way valve 17 and the second port 19b of the three-way valve 19, respectively.
• the second port 17 b of the three-way valve 17 is connected to a line 22 for supplying the noz gas P via a two-way valve 20 with an actuator and a check valve 21.
• the third port 19 c of the three-way valve 19 communicates with a vertically extending portion of the gas line 13.
• the second and third ports 17b, 17c, 18b, 18c, 19b, and 19c of the three-way valves 17, 18, and 19 are always in communication.
• the actuator of each three-way valve 17, 18, 18, 19 moved a valve in the form of a diaphragm built in the three-way valve, and the first port was in communication with the second and third ports. And the communication is interrupted.
• a gas line 23 is disposed adjacent to the gas line 13. Gas is supplied to the gas line 23 from the gas supply source D. As with gas line 13, gas supply line 23a, manual valve 23b, fill valve 23c, pressure regulator 23d, pressure sensor 23e, control A valve 23 f and a flow controller 23 g are provided.
• the purge gas line 12 is connected to the line 22 described above.
• This line 22 is connected to the second port 17 b of the three-way valve 17 via the two-way valve 20.
• a branch line 25 further branches from the purge gas line 12.
• the branch line 25 is connected to the primary side of the flow controller 13 g of the gas line 13, in other words, to the downstream side of the pressure control system region 14.
• the branch line 25 is provided with a control valve 25a and a check valve 25b. If it is not necessary to purge the pressure control system area 14 such as when supplying the same type of gas to the reaction furnace 32 multiple times from the gas line 13, the control valve 13 f is closed and the branch line 25 is used.
• a purge gas is sent to the gas line 13 so that only the gas line 13 on the downstream side of the pressure control system area 14 can be purged.
• the branch line 25 is further branched on the way and connected to the primary side of the flow controller 23 g of the gas line 23.
• the above-described fluid control device 11 is configured as a single integrated structure unit 26.
• the integrated structure unit 26 has a base plate 27 extending along the first vertical plane and a base plate 28 extending along the second vertical plane.
• the width of the base plate 28 is equal to the width of the gas line 13.
• a plurality of joint blocks 26a are mounted on the base plates 27 and 28.
• Functional members such as, 18, 19 and the two-way valve 20 are mounted on a block (eg, valve block 26b).
• the blocks for these functional members are airtightly connected to each other via the joint block 26a.
• the three-way valve 18 When supplying the processing gas B to the reaction processing furnace 32, the three-way valve 18 is opened with the two-way valve 20 closed.
• the processing gas B is introduced into the gas line 13 from the extension 15 and is controlled to a predetermined pressure when passing through the pressure control system region 14 of the gas line 13, and is further controlled to a predetermined flow rate by the flow controller 13. And finally introduced into the processing reactor 32 (see FIGS. 2 and 3).
• one (one system) gas line is provided with a flow control region and a pressure control region, and this one gas supply line is used for supplying a plurality of types of gas. Shared. For this reason, a significant cost reduction of the fluid control device can be achieved.
• the fluid control device can be made more compact by reducing the number of lines. Specifically, the fluid control device can be downsized by the width X shown in FIG. 1 as compared with the conventional device shown in FIGS. 10 and 11. Furthermore, the addition of gas species can be performed very easily.
• the following conditions are required for sharing a gas line: (1) Even if gases are mixed, they do not react in the gas line; (2) Gas is supplied to the reaction furnace simultaneously. (3) The flow ranges of each gas are close.
• the combination of processing gases A, B, and C is a combination of SiH 4 gas, Si 2 H 2 Cl gas, and Si 2 C 16 gas, or a combination of NH 3 gas, N 2 H 4 gas, and NXHY gas.
• a plurality of gas supply sources are connected to only one gas line 13, but a plurality of gas supply sources can be connected to a plurality of gas lines.
• the first gas line 13 is connected to a SiH 4 gas supply source, a Si 2 H 2 C 1 gas supply source and a Si 2 C 16 gas supply source, and the first gas line 13 is connected to the first gas line 13.
• An NH 3 gas supply source, an N 2 H 4 gas supply source and an NXHY gas supply source can be connected to a second gas line having a similar configuration.
• a purge gas line 22 is connected to the second gas line in the same manner as the first gas line 13.
• both the pressure regulator 13 d as pressure adjusting means and the pressure sensor 13 e as pressure monitoring means are provided in the pressure control system area. But not limited to this.
• the pressure may not be actively adjusted in such a case. In such a case, the pressure regulator 13 d may not be provided.
• a mass flow controller is used as the flow controllers 12 g, 13 g, and 23 g, but a pressure type flow controller may be used without being limited thereto.
• the digital MFC stores only the flow control characteristic curve corresponding to the reference gas and the reference flow rate.
• one type of reference gas and the conversion factor for that reference flow rate are experimentally obtained in advance.
• an approximate compensation value is calculated from the measured value of the actual gas flow rate and the conversion coefficient, and the flow control characteristic curve is corrected based on the compensation value. Then, control the gas flow. This makes it possible to handle a large number of different gases and a wide flow range.
• FIGS. 6 to 9 show another embodiment of the fluid control device.
• the same members as those shown in FIGS. 1 to 5 are denoted by the same reference numerals, and redundant description will be omitted.
• one gas line 13 is provided with a flow controller 13 g (not shown in FIGS. 6 to 9) such as a mass flow controller and the like.
• the point that the pressure control system region 14 is provided on the upstream side of 13 g is the same.
• the gas line 13 extending on the first vertical plane changes its direction by approximately 90 degrees at the lower end portion which is the upstream end portion thereof, but the first vertical line continues. Extends laterally on a plane.
• the horizontal extension of the gas line 13 is referred to as an extension 30.
• the gas supply pipes 29 a, 29 b, 29 c connected to the processing gas supply sources A, B, C are connected to the extension 30. Purge upstream of extension 30
• the purge gas supply pipe 31 connected to the gas supply source P is connected.
• Each gas supply pipe 29a, 29b, 29c, 31 is provided with a two-way valve 32 (open / close valve).
• the dead region V (gas is supplied) is provided between the downstream side of the two-way valve of the gas supply pipes 29 a, 29 b, and 29 c and the extension 30 of the gas line.
• the gas remains because a stagnation region remains (see Figs. 6 and 7).
• FIGS. 8 and 9 if a purge gas is supplied, the gas remaining in the dead region V cannot be purged.
• FIGS. 6 to 9 different types of gas can be supplied by one (one system) gas line, so that the cost of the fluid control device can be reduced by the embodiment shown in FIGS. Can be achieved in the same manner as described above.
• the embodiment shown in FIGS. 6 to 9 has the effect of reducing the number of lines because the gas line extension 30 extends in the horizontal direction. Is inferior to the embodiment shown in FIGS.
• the embodiment shown in FIGS. 6 to 9 is also inferior to the embodiment shown in FIGS. 1 to 5 in that the dead region V is inevitably generated.

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• Mechanical Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Metallurgy (AREA)
• Organic Chemistry (AREA)
• General Engineering & Computer Science (AREA)

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Citations (5)

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• 2003
  • 2003-02-07 WO PCT/JP2003/001338 patent/WO2004070801A1/ja active Search and Examination
  • 2003-02-07 KR KR1020037013403A patent/KR100929713B1/ko not_active IP Right Cessation
  • 2003-02-07 CN CN038000679A patent/CN100407373C/zh not_active Expired - Fee Related

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