CN100407373C - Fluid Control Devices and Heat Treatment Devices - Google Patents

Fluid Control Devices and Heat Treatment Devices Download PDF

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CN100407373C
CN100407373C CN038000679A CN03800067A CN100407373C CN 100407373 C CN100407373 C CN 100407373C CN 038000679 A CN038000679 A CN 038000679A CN 03800067 A CN03800067 A CN 03800067A CN 100407373 C CN100407373 C CN 100407373C
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gas
control device
fluid control
pressure
upstream
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CN1586001A (en
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冈部庸之
大仓成幸
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Tokyo Electron Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557Pulsed pressure or control pressure
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52Controlling or regulating the coating process
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17DPIPE-LINE SYSTEMS; PIPE-LINES
    • F17D1/00Pipe-line systems
    • F17D1/02Pipe-line systems for gases or vapours
    • F17D1/04Pipe-line systems for gases or vapours for distribution of gas

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)

Abstract

A fluid controller (13g) is provided on one gas line (13), and a pressure control system area (14) is provided upstream of the flow controller (13g) of the gas line (13). An extension part (15) extending from the upstream side of the gas pipeline (13) along the direction perpendicular to the gas pipeline (13) is provided, and the supply sources of the different types of processing gases (A), (B), and (C) are connected to the extension part (15).

Description

流体控制装置和热处理装置 Fluid Control Devices and Heat Treatment Devices

技术领域 technical field

本发明涉及流体控制装置和具有该流体控制装置的热处理装置。The present invention relates to a fluid control device and a heat treatment device having the fluid control device.

背景技术 Background technique

在半导体制造工序的成膜工序中,要组合使用多种气体,在半导体晶片上进行成膜。在成膜工序中,经常要切换使用多种气体(例如,H2、O2、SiH4、N2等),或者经常要以不同的流量使用同一种气体。In the film formation process of the semiconductor manufacturing process, a combination of various gases is used to form a film on a semiconductor wafer. In the film forming process, it is often necessary to switch to use multiple gases (for example, H 2 , O 2 , SiH 4 , N 2 , etc.), or to use the same gas at different flow rates.

图10为向半导体制造装置的反应处理炉内供给多种气体的现有的气体供给系统的系统图。气体供给系统由分别供给不同气体的多个处理气体管路a~d和供给清洗气体的清洗气体管路p构成。FIG. 10 is a system diagram of a conventional gas supply system for supplying a plurality of gases into a reaction processing furnace of a semiconductor manufacturing apparatus. The gas supply system is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line p for supplying purge gas.

在各个处理气体管路a~d中安装着质量流量控制器等流量控制器1。在流量控制器1的上游设置换向阀2、过滤器3、压力调整器4、压力传感器5和控制阀2a。而且,从清洗气体管路p分支出来的分支管路p’与流量控制器1的初始侧连接。A flow controller 1 such as a mass flow controller is installed in each of the processing gas lines a to d. Upstream of the flow controller 1 are provided a reversing valve 2, a filter 3, a pressure regulator 4, a pressure sensor 5 and a control valve 2a. Also, a branch line p' branched from the purge gas line p is connected to the initial side of the flow controller 1.

在图10所示的气体供给系统中,对一种气体设置一个气体管路,而且在一个气体管路上设置一个流量控制器。即,为了供给多种气体,要使用与气体种类数目对应的数目的气体管路和流量控制器。这样,会产生气体供给系统的成本提高及占地面积增大等问题。In the gas supply system shown in FIG. 10, one gas line is provided for one gas, and one flow controller is provided on one gas line. That is, in order to supply a plurality of gases, the number of gas lines and flow controllers corresponding to the number of types of gases are used. This causes problems such as an increase in the cost of the gas supply system and an increase in the floor space.

在日本国特许公报特开2000-323464号中,公开了一种在多个气体管路a、b、c中共用一个流量控制器1的气体供给系统,如图11所示。Japanese Patent Publication No. 2000-323464 discloses a gas supply system in which one flow controller 1 is shared among multiple gas pipelines a, b, c, as shown in FIG. 11 .

图11所示的气体供给系统由分别供给不同气体的多个处理气体管路a~d、供给清洗气体p的清洗气体管路p构成。在各气体管路a~d上,设置换向阀7、过滤器8、压力调整器10和压力传感器9。在气体管路a上设置着气体管路a~c共用的质量流量控制器等流量控制器6。在气体管路d上设有专用的流量控制器6。从清洗气体管路p分支出来的管路p’,与各个流量控制器6的初始侧连接。The gas supply system shown in FIG. 11 is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line p for supplying purge gas p. A reversing valve 7 , a filter 8 , a pressure regulator 10 and a pressure sensor 9 are arranged on each of the gas pipelines a to d. A flow controller 6 such as a mass flow controller common to the gas lines a to c is provided on the gas line a. A dedicated flow controller 6 is provided on the gas pipeline d. A pipe p' branched from the purge gas pipe p is connected to the initial side of each flow controller 6 .

采用图11所示的结构,由于气体管路a~c共用流量控制器6,因此,气体供给系统的成本降低相应的量,以及可以达到小型化。但是,在图11所示的气体供给系统中,由于各气体管路a~c具有换向阀7、过滤器8、压力调整器10和压力传感器9,所以还不能充分地使系统小型化。With the structure shown in FIG. 11 , since the gas pipelines a to c share the flow controller 6 , the cost of the gas supply system can be reduced by a corresponding amount, and miniaturization can be achieved. However, in the gas supply system shown in FIG. 11, since each gas line ac has a reversing valve 7, a filter 8, a pressure regulator 10, and a pressure sensor 9, the system cannot be sufficiently miniaturized.

发明内容 Contents of the invention

本发明的目的是要使控制并供给多种气体的装置(即流体控制装置)小型化及低成本化。另外,本发明的另一个目的是提供一种可容易地与气体种类的增减相对应的流体控制装置。本发明的再一个目的是提供具有上述流体控制装置的热处理装置。An object of the present invention is to reduce the size and cost of a device for controlling and supplying a plurality of gases (ie, a fluid control device). In addition, another object of the present invention is to provide a fluid control device that can easily respond to increases and decreases in gas types. Another object of the present invention is to provide a heat treatment device having the above-mentioned fluid control device.

为了达到上述目的,本发明提供了一种流体控制装置,它具有:In order to achieve the above object, the present invention provides a fluid control device, which has:

气体管路,该气体管路具有配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和a gas line having a first region configured with a flow control mechanism, and a second region upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and

多个连接机构,该多个连接机构设置在所述气体管路的所述第二区域的上游,可分别地连接流体供给源,a plurality of connection mechanisms arranged upstream of the second region of the gas pipeline and respectively connectable to fluid supply sources,

所述连接机构由设置于所述气体管路上的多个三通阀构成;所述各三通阀分别具有第一、第二和第三孔;所述各三通阀的第一孔分别与流体供给源连接;相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;将清洗气体供给至处于最上游的三通阀的第二孔。The connecting mechanism is composed of a plurality of three-way valves arranged on the gas pipeline; each of the three-way valves has first, second and third holes; the first holes of the three-way valves are respectively connected to The fluid supply source is connected; the second hole of the upstream three-way valve among the adjacent three-way valves is connected with the third hole of the downstream three-way valve; the third hole of the most downstream three-way valve is connected with all The second area of the gas pipeline is connected; the cleaning gas is supplied to the second hole of the most upstream three-way valve.

优选为,所述气体管路具有包含所述第一和第二区域的第一部分、和从所述第一部分的上游沿着与所述第一部分垂直的方向延伸的第二部分,所述多个连接机构设置于所述第二部分。Preferably, the gas pipeline has a first portion including the first and second regions, and a second portion extending from upstream of the first portion in a direction perpendicular to the first portion, the plurality of The connecting mechanism is arranged on the second part.

另外,本发明还提供了一种流体控制装置,它包括:多个气体管路,该多个气体管路至少在第一平面上相互平行地沿第一方向延伸,这些多个气体管路各自具有:配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和,多个连接机构,该多个连接机构设置于所述多个气体管路中的至少一个气体管路上,可分别连接流体供给源,In addition, the present invention also provides a fluid control device, which includes: a plurality of gas pipelines, the multiple gas pipelines extend parallel to each other along the first direction at least on the first plane, and each of the multiple gas pipelines having: a first region configured with a flow control mechanism; and a second region upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and, a plurality of connecting mechanisms, the plurality of A connection mechanism is arranged on at least one gas pipeline among the plurality of gas pipelines, and can be respectively connected to a fluid supply source,

所述至少一个气体管路具有:包含所述第一区域和第二区域并且在所述第一平面上沿着所述第一方向延伸的第一部分;和从所述第一部分的上游、在与所述第一平面垂直的第二平面上沿着与所述第一方向垂直的第二方向延伸的第二部分,The at least one gas pipeline has: a first portion including the first region and the second region and extending along the first direction on the first plane; a second portion extending along a second direction perpendicular to the first direction on a second plane perpendicular to the first plane,

所述多个连接机构设置于所述第二部分,The plurality of connecting mechanisms are arranged on the second part,

所述连接机构由设置于所述气体管路上的多个三通阀构成。此时,所述各三通阀分别具有第一、第二和第三孔;所述各三通阀的第一孔分别与流体供给源连接;相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;将清洗气体供给至处于最上游的三通阀的第二孔。The connecting mechanism is composed of a plurality of three-way valves arranged on the gas pipeline. At this time, each of the three-way valves has first, second and third holes; the first holes of the three-way valves are respectively connected to the fluid supply source; the upstream three-way of the three-way valves adjacent to each other The second hole of the valve is connected with the third hole of the downstream three-way valve; the third hole of the most downstream three-way valve is connected with the second area of the gas pipeline; the cleaning gas is supplied to the most downstream upstream of the second port of the 3-way valve.

而且,本发明还提供了一种热处理装置,它包括:具有上述结构的流体控制装置;和通过上述流体控制装置供给流体的反应处理炉。Furthermore, the present invention also provides a heat treatment device comprising: the fluid control device having the above-mentioned structure; and a reaction treatment furnace supplied with fluid through the above-mentioned fluid control device.

附图说明 Description of drawings

图1是表示本发明的流体控制装置的一个实施方式的系统图。FIG. 1 is a system diagram showing an embodiment of a fluid control device of the present invention.

图2是表示在图1所示的流体控制装置中与多个气体供给源连接的气体管路的结构的剖面图,它是表示处理气体在气体管路中通过的状态的图。2 is a cross-sectional view showing the structure of a gas line connected to a plurality of gas supply sources in the fluid control device shown in FIG. 1 , showing a state in which process gas passes through the gas line.

图3是由箭头III方向看图2所示的气体管路的主视图。Fig. 3 is a front view of the gas pipeline shown in Fig. 2 viewed from the direction of arrow III.

图4是与图2相同的剖面图,它是表示清洗气体在气体管路中通过的状态的图。Fig. 4 is a cross-sectional view similar to Fig. 2, showing a state in which purge gas passes through a gas line.

图5是由箭头V方向看图4所示的气体管路的主视图。Fig. 5 is a front view of the gas pipeline shown in Fig. 4 viewed from the arrow V direction.

图6是表示图2所示的气体管路的其他形式的图,它是表示处理气体在气体管路中通过的状态的图。FIG. 6 is a view showing another form of the gas line shown in FIG. 2 , showing a state in which process gas passes through the gas line.

图7是表示图6的VII-VII剖面的图。FIG. 7 is a diagram showing a VII-VII cross section in FIG. 6 .

图8是与图6相同的剖面图,它是表示清洗气体在气体管路中通过的状态的图。Fig. 8 is a cross-sectional view similar to Fig. 6, showing a state in which purge gas passes through the gas line.

图9是表示图8的IX-IX截面的图。FIG. 9 is a diagram showing a section taken along line IX-IX of FIG. 8 .

图10是表示现有的气体供给系统的系统示意图。Fig. 10 is a system schematic diagram showing a conventional gas supply system.

图11是表示另一个现有的气体供给系统的系统示意图。Fig. 11 is a system schematic diagram showing another conventional gas supply system.

具体实施方式 Detailed ways

下面基于附图来说明本发明的实施方式。Embodiments of the present invention will be described below based on the drawings.

图1是表示本发明的具有流体控制装置的热处理装置的一个实施方式的系统图。热处理装置具有包含流体控制装置11的气体供给系统和反应处理炉32。反应处理炉32容纳基板并对该基板进行氧化处理或CVD等热处理,可以使用众所周知的适当的炉。FIG. 1 is a system diagram showing an embodiment of a heat treatment apparatus having a fluid control device according to the present invention. The heat treatment device has a gas supply system including a fluid control device 11 and a reaction treatment furnace 32 . The reaction treatment furnace 32 accommodates a substrate and performs heat treatment such as oxidation treatment or CVD on the substrate, and a well-known suitable furnace can be used.

流体控制装置11包含用于将气体供给反应处理炉32的等间隔配置的多个气体管路12、13、23。各气体管路在大概是垂直延伸的第一垂直平面内延伸。The fluid control device 11 includes a plurality of gas lines 12 , 13 , 23 arranged at equal intervals for supplying gas to the reaction treatment furnace 32 . Each gas line extends in a first vertical plane extending approximately vertically.

图1中左端的管路12是用于供给N2等清洗气体P的清洗气体管路。在清洗气体管路12上按从上游的顺序设置气体供给口12a、手动阀12b、过滤器12c、压力调整器12d、压力传感器12e、控制阀12f、流量控制器12g和过滤器12h。The pipeline 12 at the left end in FIG. 1 is a purge gas pipeline for supplying purge gas P such as N 2 . A gas supply port 12a, a manual valve 12b, a filter 12c, a pressure regulator 12d, a pressure sensor 12e, a control valve 12f, a flow controller 12g, and a filter 12h are provided in the purge gas line 12 in order from upstream.

气体管路13是用于供给多种处理气体(例如H2、O2、N2、SiH4等)的处理气体管路。如图1~图5所示,处理气体管路13具有设置有流量控制器13g的流量控制系统区域(第一区域)和设在该流量控制器上游的压力控制系统区域14(第二区域)。在压力控制系统区域14中,设置手动阀13b、过滤器13c、压力调整器13d、压力传感器13e、控制阀13f、过滤器13h和控制阀13i。The gas pipeline 13 is a processing gas pipeline for supplying various processing gases (such as H 2 , O 2 , N 2 , SiH 4 , etc.). As shown in FIGS. 1 to 5 , the process gas pipeline 13 has a flow control system area (first area) provided with a flow controller 13g and a pressure control system area 14 (second area) located upstream of the flow controller. . In the pressure control system area 14, a manual valve 13b, a filter 13c, a pressure regulator 13d, a pressure sensor 13e, a control valve 13f, a filter 13h, and a control valve 13i are provided.

多个气体供给源A、B、C与气体管路13的上游端部连接。如图2所示,在垂直方向延伸的气体管路13,在作为其上游端部的下端部,改变大致90°的方向,沿着与上述第一垂直平面垂直的方向延伸。以下,将气体管路13的水平方向延长部分称为气体管路13的延长部15。另外,气体管路13的垂直方向延伸部分及延长部15,在与上述第一垂直平面垂直的同时,位于沿垂直方向延伸的第二垂直平面内。A plurality of gas supply sources A, B, and C are connected to the upstream end of the gas line 13 . As shown in FIG. 2 , the gas line 13 extending in the vertical direction changes its direction by approximately 90° at the lower end portion which is the upstream end portion, and extends in a direction perpendicular to the above-mentioned first vertical plane. Hereinafter, the horizontally extended portion of the gas line 13 is referred to as the extension 15 of the gas line 13 . In addition, the vertically extending portion of the gas line 13 and the extension portion 15 are located in a second vertical plane extending in the vertical direction while being perpendicular to the above-mentioned first vertical plane.

在气体管路13的延长部15上,串联地设置带有致动器的三通阀17、18、19。三通阀17、18、19的第一孔17a、18a、19a分别与连接于气体供给源A、B、C的气体供给管16a、16b、16c相连接。三通阀18的第二及第三孔18b、18c,分别与三通阀17的第三孔17c及三通阀19的第二孔19b相连接。三通阀17的第二孔17b,通过带有致动器的二通阀20及单向阀21,与供给清洗气体P的管路22相连接。三通阀19的第三孔19c,与气体管路13的垂直方向延伸部分相通。On the extension 15 of the gas line 13 three-way valves 17 , 18 , 19 with actuators are arranged in series. The first holes 17a, 18a, 19a of the three-way valves 17, 18, 19 are connected to the gas supply pipes 16a, 16b, 16c connected to the gas supply sources A, B, and C, respectively. The second and third holes 18b, 18c of the three-way valve 18 are connected to the third hole 17c of the three-way valve 17 and the second hole 19b of the three-way valve 19, respectively. The second port 17b of the three-way valve 17 is connected to a pipeline 22 for supplying cleaning gas P through a two-way valve 20 and a one-way valve 21 with an actuator. The third hole 19c of the three-way valve 19 communicates with the vertically extending portion of the gas line 13 .

三通阀17、18、19的第二及第三孔17b、17c,18b、18c,19b、19c平时连通。各三通阀17、18、19的致动器,驱动内置于该三通阀的膜片形态的阀体,对第一孔与第二及第三孔连通的状态、切断该连通的状态进行切换。The second and third holes 17b, 17c, 18b, 18c, 19b, 19c of the three-way valves 17, 18, 19 communicate normally. The actuators of the three-way valves 17, 18, and 19 drive the valve body in the form of a diaphragm built in the three-way valve, and the state of communicating with the first hole with the second and third holes and the state of cutting off the communication are controlled. switch.

再参照图1,与气体管路13相邻地配置气体管路23。气体从气体供给源D供给至气体管路23。在气体供给管路23上,也与气体管路13同样,设置有气体供给口23a、手动阀23b、过滤器23c、压力调整器23d、压力传感器23e、控制阀23f和流量控制器23g。Referring again to FIG. 1 , the gas line 23 is disposed adjacent to the gas line 13 . Gas is supplied from a gas supply source D to the gas line 23 . Like the gas line 13, the gas supply line 23 is provided with a gas supply port 23a, a manual valve 23b, a filter 23c, a pressure regulator 23d, a pressure sensor 23e, a control valve 23f, and a flow controller 23g.

如图1和图4所示,上述的管路22从清洗气体管路12分支出来,该管路22通过二通阀20,与三通阀17的第二孔17b相连接。As shown in FIGS. 1 and 4 , the above-mentioned pipeline 22 is branched from the cleaning gas pipeline 12 , and the pipeline 22 is connected to the second hole 17 b of the three-way valve 17 through the two-way valve 20 .

另外,分支管路25从清洗气体管路12分支出来。分支管路25与气体管路13的流量控制器13g的初始侧相连接,换句话说,与压力控制系统区域14的下游相连接。在分支管路25上,设置控制阀25a和单向阀25b。在多次将同一种气体从气体管路13供给至反应处理炉32时等不需要清洗压力控制系统区域14的情况下,可以在关闭控制阀13f的状态下,将清洗气体从分支管路25送入气体管路13中,可以只清洗在气体管路13的压力控制系统区域14的下游。另外,分支管路25还可在中途再分支,与气体管路23的流量控制器23g的初始侧连接。In addition, the branch line 25 branches off from the purge gas line 12 . The branch line 25 is connected to the initial side of the flow controller 13 g of the gas line 13 , in other words, downstream of the pressure control system area 14 . On the branch line 25, a control valve 25a and a check valve 25b are provided. When the same gas is supplied from the gas pipeline 13 to the reaction treatment furnace 32 multiple times, etc., when it is not necessary to clean the pressure control system area 14, the cleaning gas can be sent from the branch pipeline 25 in the state of closing the control valve 13f. Into the gas pipeline 13, only the downstream of the pressure control system area 14 of the gas pipeline 13 can be cleaned. In addition, the branch line 25 may be further branched on the way, and connected to the initial side of the flow controller 23g of the gas line 23 .

上述的流体控制装置11是作为单一的集成结构部件26构成的。集成结构部件26具有沿着上述第一垂直平面延伸的基板27、和沿着上述第二垂直平面延伸的基板28。基板28的宽度,与气体管路13的宽度相等。在基板27、28上安装多个接头块26a。流量控制器12g、13g、23g,手动阀12b、13b、23b,过滤器12c、13c、23c,压力调整器12d、13d、23d和三通阀17、18、19及二通阀20等功能构件,放置在块(例如阀块26b)上。这些功能构件用的块,通过接头块26a相互不漏气地连接。The fluid control device 11 described above is constructed as a single integral structural component 26 . The integrated structural component 26 has a substrate 27 extending along the above-mentioned first vertical plane, and a substrate 28 extending along the above-mentioned second vertical plane. The width of the substrate 28 is equal to the width of the gas line 13 . A plurality of joint blocks 26 a are mounted on the substrates 27 , 28 . Flow controllers 12g, 13g, 23g, manual valves 12b, 13b, 23b, filters 12c, 13c, 23c, pressure regulators 12d, 13d, 23d, three-way valves 17, 18, 19 and two-way valve 20 and other functional components , placed on a block (eg valve block 26b). The blocks for these functional components are airtightly connected to each other by joint blocks 26a.

下面说明作用。The function is explained below.

在将处理气体B供给至反应处理炉32的情况下,在关闭二通阀20的状态下,打开三通阀18。处理气体B从延长部15导入至气体管路13中,在通过气体管路13的压力控制系统区域14时,控制为规定的压力,而且,利用流量控制器13控制为规定流量,最后,导入处理反应炉32内(参见图2和图3)。When the processing gas B is supplied to the reaction processing furnace 32, the three-way valve 18 is opened with the two-way valve 20 closed. The processing gas B is introduced into the gas pipeline 13 from the extension part 15, and when passing through the pressure control system area 14 of the gas pipeline 13, it is controlled to a predetermined pressure, and is controlled to a predetermined flow rate by the flow controller 13, and finally introduced In the processing reaction furnace 32 (see Fig. 2 and Fig. 3).

接着,在将与处理气体B不同的处理气体例如处理气体A供给至反应处理炉32的情况下,在此之前,要利用清洗气体P清洗气体管路13及其延长部15内。在这种情况下,当关闭三通阀17、18、19,打开二通阀20时,将清洗气体P供给至气体管路13及其延长部15,由此来清洗全部的气体管路13及其延长部15。这时,没有清洗气体供给不到的死(dead)区域(前面所用的处理气体B残存沉淀的区域),处理气体B不会残留在气体管路13及其延长部15内(参见图4和图5)。清洗完毕,关闭二通阀20,打开三通阀17。由此,处理气体A供给至反应处理炉32中。Next, when a processing gas different from the processing gas B, eg, processing gas A, is supplied to the reaction processing furnace 32 , prior to that, the inside of the gas line 13 and its extension 15 is cleaned with the cleaning gas P. In this case, when the three-way valves 17, 18, and 19 are closed and the two-way valve 20 is opened, the cleaning gas P is supplied to the gas pipeline 13 and its extension 15, thereby cleaning the entire gas pipeline 13 And its extension 15. At this time, there is no dead (dead) area (the area where the processing gas B used in the front remains and precipitates) that cannot be supplied with the cleaning gas, and the processing gas B will not remain in the gas pipeline 13 and its extension 15 (see FIGS. 4 and 15 ). Figure 5). After cleaning, close the two-way valve 20 and open the three-way valve 17. Thus, the processing gas A is supplied to the reaction processing furnace 32 .

如上所述,在上述实施方式中,在一个(一个系统)气体管路上,设置有流量控制区域和压力控制系统区域,为了供给多种气体,可以共用该一个气体供给管路。因此,可以大大降低流体控制装置的成本。另外,管路数目减少,可使流体控制装置紧凑。具体地说,与图10和图11所示的现有装置相比,流体控制装置尺寸可减小图1所示的宽度X。另外,极容易增加气体种类。为了共用气体管路,必须要具备下列条件:(1)即使气体彼此混合,在气体管路内不起反应;(2)气体不能同时供给反应处理炉;(3)各种气体的流量范围接近。例如,处理气体A、B、C的组合可以为SiH4气体、Si2H2Cl气体、Si2Cl6气体的组合,或者NH3气体、N2H4气体、NXHY气体的组合。As described above, in the above embodiment, the flow rate control area and the pressure control system area are provided on one (one system) gas line, and the one gas supply line can be shared in order to supply multiple gases. Therefore, the cost of the fluid control device can be greatly reduced. In addition, the number of pipelines is reduced, making the fluid control device compact. Specifically, the size of the fluid control device can be reduced by the width X shown in FIG. 1 compared to the prior art devices shown in FIGS. 10 and 11 . In addition, it is extremely easy to add gas types. In order to share the gas pipeline, the following conditions must be met: (1) Even if the gases are mixed with each other, there is no reaction in the gas pipeline; (2) The gas cannot be supplied to the reaction treatment furnace at the same time; (3) The flow range of various gases is close to . For example, the combination of processing gases A, B, and C can be a combination of SiH 4 gas, Si 2 H 2 Cl gas, and Si 2 Cl 6 gas, or a combination of NH 3 gas, N 2 H 4 gas, and N X H Y gas .

另外,在上述实施方式中,使多种气体供给源只与一个气体管路13连接,但也可以使多种气体供给源分别与多个气体管路连接。在这种情况下,例如可使SiH4气体供给源、Si2H2Cl气体供给源和Si2Cl6气体供给源与第一气体管路13连接,使NH3气体供给源、N2H4气体供给源和NXHY气体供给源与具有与第一气体管路13相同结构的第二气体管路连接。清洗气体管路22也可与第一气体管路13同样,与第二气体管路连接。In addition, in the above-described embodiment, the multiple gas supply source is connected to only one gas line 13 , but the multiple gas supply source may be connected to a plurality of gas lines, respectively. In this case, for example, the SiH 4 gas supply source, the Si 2 H 2 Cl gas supply source, and the Si 2 Cl 6 gas supply source can be connected to the first gas line 13, and the NH 3 gas supply source, N 2 H 4 The gas supply source and the N X H Y gas supply source are connected to the second gas line having the same structure as the first gas line 13. The cleaning gas line 22 may also be connected to the second gas line similarly to the first gas line 13 .

另外,在上述实施方式中,在压力控制系统区域设置作为压力调整装置的压力调整器13d和作为压力监视装置的压力传感器13e这两者,但不是仅限于此。例如,当处理气体为低蒸气压气体时,有时不需进行积极的压力调整,在这种情况下,也可以不设置压力调整器13d。In addition, in the above-described embodiment, both the pressure regulator 13d as the pressure regulator and the pressure sensor 13e as the pressure monitoring device are provided in the pressure control system area, but the present invention is not limited thereto. For example, when the processing gas is a low vapor pressure gas, it may not be necessary to actively adjust the pressure. In this case, the pressure regulator 13d may not be provided.

在上述实施方式中,作为流量控制器12g、13g、23g来说,使用质量流量控制器,但不是仅限于此,也可使用压力式流量控制器。In the above-described embodiment, mass flow controllers were used as the flow controllers 12g, 13g, and 23g, but not limited thereto, pressure-type flow controllers may also be used.

另外,作为流量控制器12g、13g、23g,最好使用数字式质量流量控制器。这样,即使对各种气体所要求的供给流量有某种程度不同,也可以与之相对应。在数字式MFC(质量流量控制器)中,只装入与基准气体和基准流量相对应的流量控制特性曲线。在将不同的气体控制为不同流量的情况下,事前用实验方法求出一种基准气体及相对于其基准流量的变换系数。而且,在将不同气体控制为不同的情况下,可根据实际的气体流量测定值和上述变换系数,计算出近似的补偿值,再基于该补偿值,修正流量控制特性曲线,进行气体流量控制。由此,可与多种不同气体和大的流量范围相对应。当然,在同一种气体控制为不同流量的情况下,也可以进行同样的控制。In addition, it is preferable to use a digital mass flow controller as the flow controllers 12g, 13g, and 23g. In this way, even if the supply flow rates required for various gases are somewhat different, it is possible to cope with them. In the digital MFC (mass flow controller), only the flow control characteristic curve corresponding to the reference gas and the reference flow is loaded. In the case of controlling different gases to have different flow rates, a reference gas and its conversion coefficient with respect to the reference flow rate are obtained experimentally in advance. Moreover, when different gases are controlled to be different, an approximate compensation value can be calculated based on the actual gas flow measurement value and the above-mentioned conversion coefficient, and then based on the compensation value, the flow control characteristic curve can be corrected to perform gas flow control. Therefore, it can correspond to a variety of different gases and a wide flow range. Of course, the same control can also be performed when the same gas is controlled to have different flow rates.

图6~图9表示流体控制装置的另一个实施方式。在这些图中,对于与图1~图5所述的构件相同的构件,用相同的标号来表示,省略重复说明。在图6~图9所示的实施方式中,在一个气体管路13上设置质量流量控制器等流量控制器13g(图6~图9中没有示出)。在流量控制器13g的上游设置压力控制系统区域14这点上是相同的。在图6~图9所示的实施方式中,在上述第一垂直平面上延伸的气体管路13,在作为其上游端部的下端部,改变大约90°方向,继续在上述第一垂直平面上向横方向延伸。以下,将气体管路13的水平方向延长部分称为延长部30。6 to 9 show another embodiment of the fluid control device. In these figures, the same components as those described in FIGS. 1 to 5 are denoted by the same reference numerals, and repeated explanations are omitted. In the embodiment shown in FIGS. 6 to 9 , a flow controller 13 g (not shown in FIGS. 6 to 9 ) such as a mass flow controller is provided on one gas line 13 . The same applies to the point that the pressure control system area 14 is provided upstream of the flow rate controller 13g. In the embodiment shown in Figures 6 to 9, the gas pipeline 13 extending on the above-mentioned first vertical plane changes its direction by about 90° at the lower end as its upstream end, and continues on the above-mentioned first vertical plane. extending horizontally. Hereinafter, the horizontally extended portion of the gas line 13 is referred to as an extended portion 30 .

与处理气体供给源A、B、C分别连接的气体供给管29a、29b、29c与延长部30连接。与清洗气体供给源P连接的清洗气体供给管31,与延长部30的最上游连接。在各气体供给管29a、29b、29c、31上,分别设置二通阀32(开闭阀)。Gas supply pipes 29 a , 29 b , and 29 c respectively connected to processing gas supply sources A, B, and C are connected to the extension portion 30 . The cleaning gas supply pipe 31 connected to the cleaning gas supply source P is connected to the most upstream of the extension part 30 . Two-way valves 32 (on-off valves) are provided on the respective gas supply pipes 29a, 29b, 29c, and 31, respectively.

在图6~图9所示的实施方式中,由于在气体供给管29a、29b、29c的二通阀的下游和气体管路的延长部30之间产生死区域V(气体残留沉淀的区域),所以气体残留下来(参见图6和图7)。在这种情况下,如图8和图9所示,当供给清洗气体时,残留在死区域V中的气体不能清洗到。In the embodiments shown in FIGS. 6 to 9 , a dead area V (area where gas remains and settles) is generated between the downstream of the two-way valve of the gas supply pipes 29a, 29b, and 29c and the extension portion 30 of the gas pipeline. , so the gas remains (see Figure 6 and Figure 7). In this case, as shown in FIGS. 8 and 9 , when the cleaning gas is supplied, the gas remaining in the dead area V cannot be cleaned.

在图6~图9所示的实施方式中,由于可以用一个(一个系统)气体管路供给不同种类的气体,所以与图1~图5所示的实施方式同样,可以降低流体控制装置的成本。但是,在图6~图9所示的实施方式中,由于气体管路的延长部30沿横方向延伸,虽有减少管路数目的效果,但基于管路数目的削减而使流体控制装置的小型化的效果与图1~图5所示的实施方式相比较差。另外,在不可避免地产生死区域V这点上,图6~图9所示的实施方式,与图1~图5所示的实施方式相比较差。In the embodiments shown in FIGS. 6 to 9 , since one (one system) gas pipeline can be used to supply different types of gases, the same as the embodiments shown in FIGS. 1 to 5 , the cost of the fluid control device can be reduced. cost. However, in the embodiments shown in FIGS. 6 to 9 , since the extension portion 30 of the gas pipeline extends in the lateral direction, although there is an effect of reducing the number of pipelines, the reduction in the number of pipelines reduces the flow control device. The effect of miniaturization is inferior to that of the embodiments shown in FIGS. 1 to 5 . In addition, the embodiments shown in FIGS. 6 to 9 are inferior to the embodiments shown in FIGS. 1 to 5 in that the dead region V is inevitably generated.

Claims (10)

1.一种流体控制装置,其特征在于:1. A fluid control device, characterized in that: 包括:气体管路,该气体管路具有配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和comprising: a gas pipeline having a first region configured with a flow control mechanism, and a second region located upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and 多个连接机构,该多个连接机构设置在所述气体管路的所述第二区域的上游,可分别地连接流体供给源,a plurality of connection mechanisms arranged upstream of the second region of the gas pipeline and respectively connectable to fluid supply sources, 所述连接机构由设置于所述气体管路上的多个三通阀构成;The connection mechanism is composed of a plurality of three-way valves arranged on the gas pipeline; 所述各三通阀分别具有第一、第二和第三孔;Each of the three-way valves has first, second and third holes; 所述各三通阀的第一孔分别与流体供给源连接;The first holes of each of the three-way valves are respectively connected to a fluid supply source; 相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;The second hole of the upstream three-way valve among the adjacent three-way valves is connected with the third hole of the downstream three-way valve; 处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;The third hole of the most downstream three-way valve is connected with the second area of the gas pipeline; 将清洗气体供给至处于最上游的三通阀的第二孔。The purge gas is supplied to the second port of the most upstream three-way valve. 2.如权利要求1所述的流体控制装置,其特征在于:所述流量控制机构是质量流量控制器或压力式流量控制器。2. The fluid control device according to claim 1, wherein the flow control mechanism is a mass flow controller or a pressure flow controller. 3.如权利要求1所述的流体控制装置,其特征在于:3. The fluid control device of claim 1, wherein: 所述压力调整机构是压力调整器,The pressure adjustment mechanism is a pressure regulator, 所述压力监视机构为压力传感器。The pressure monitoring mechanism is a pressure sensor. 4.如权利要求1所述的流体控制装置,其特征在于:4. The fluid control device of claim 1, wherein: 所述气体管路具有包含所述第一和第二区域的第一部分、和从所述第一部分的上游沿着与所述第一部分垂直的方向延伸的第二部分,said gas line has a first portion including said first and second regions, and a second portion extending from upstream of said first portion in a direction perpendicular to said first portion, 所述多个连接机构设置于所述第二部分。The plurality of connecting mechanisms are disposed on the second part. 5.如权利要求1所述的流体控制装置,其特征在于:该流体控制装置是作为集成结构部件形成的。5. The fluid control device of claim 1, wherein the fluid control device is formed as an integral structural component. 6.一种流体控制装置,其特征在于:6. A fluid control device, characterized in that: 包括:多个气体管路,该多个气体管路至少在第一平面上相互平行地沿第一方向延伸,这些多个气体管路各自具有:配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和It includes: a plurality of gas pipelines, the plurality of gas pipelines extend parallel to each other along a first direction at least on a first plane, and each of these multiple gas pipelines has: a first area configured with a flow control mechanism; a second region upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and 多个连接机构,该多个连接机构设置于所述多个气体管路中的至少一个气体管路上,可分别连接流体供给源,A plurality of connection mechanisms, the plurality of connection mechanisms are arranged on at least one gas pipeline among the plurality of gas pipelines, and can be respectively connected to fluid supply sources, 所述至少一个气体管路具有:包含所述第一区域和第二区域并且在所述第一平面上沿着所述第一方向延伸的第一部分;和从所述第一部分的上游、在与所述第一平面垂直的第二平面上沿着与所述第一方向垂直的第二方向延伸的第二部分,The at least one gas pipeline has: a first portion including the first region and the second region and extending along the first direction on the first plane; a second portion extending along a second direction perpendicular to the first direction on a second plane perpendicular to the first plane, 所述多个连接机构设置于所述第二部分,The plurality of connecting mechanisms are arranged on the second part, 所述连接机构由设置于所述至少一个气体管路上的多个三通阀构成;The connection mechanism is composed of a plurality of three-way valves arranged on the at least one gas pipeline; 所述各三通阀分别具有第一、第二和第三孔;Each of the three-way valves has first, second and third holes; 所述各三通阀的第一孔分别与流体供给源连接;The first holes of each of the three-way valves are respectively connected to a fluid supply source; 相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;The second hole of the upstream three-way valve among the adjacent three-way valves is connected with the third hole of the downstream three-way valve; 处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;The third hole of the most downstream three-way valve is connected with the second area of the gas pipeline; 将清洗气体供给至处于最上游的三通阀的第二孔。The purge gas is supplied to the second port of the most upstream three-way valve. 7.如权利要求6所述的流体控制装置,其特征在于:所述流量控制机构是质量流量控制器或压力式流量控制器。7. The fluid control device according to claim 6, wherein the flow control mechanism is a mass flow controller or a pressure flow controller. 8.如权利要求6所述的流体控制装置,其特征在于:8. The fluid control device of claim 6, wherein: 所述压力调整机构是压力调整器,The pressure adjustment mechanism is a pressure regulator, 所述压力监视机构是压力传感器。The pressure monitoring means are pressure sensors. 9.如权利要求6所述的流体控制装置,其特征在于:所述流量控制机构及所述压力调整机构是作为集成结构部件形成的。9. The fluid control device of claim 6, wherein the flow control mechanism and the pressure adjustment mechanism are formed as an integrated structural component. 10.一种热处理装置,其特征在于:包括:10. A heat treatment device, characterized in that: comprising: 权利要求1或6所述的流体控制装置;和The fluid control device of claim 1 or 6; and 通过所述流体控制装置供给流体的反应处理炉。A reaction treatment furnace to which a fluid is supplied through the fluid control device.
CN038000679A 2003-02-07 2003-02-07 Fluid Control Devices and Heat Treatment Devices Expired - Fee Related CN100407373C (en)

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PCT/JP2003/001338 WO2004070801A1 (en) 2003-02-07 2003-02-07 Fluid control device and heat treatment device

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JP4355724B2 (en) * 2006-12-25 2009-11-04 シーケーディ株式会社 Gas integrated unit
JP5459895B2 (en) * 2007-10-15 2014-04-02 Ckd株式会社 Gas shunt supply unit
JP5216632B2 (en) * 2009-03-03 2013-06-19 東京エレクトロン株式会社 Fluid control device
JP5833403B2 (en) * 2011-10-06 2015-12-16 株式会社堀場エステック Fluid mechanism and support member constituting the fluid mechanism
US9188990B2 (en) 2011-10-05 2015-11-17 Horiba Stec, Co., Ltd. Fluid mechanism, support member constituting fluid mechanism and fluid control system
CN103382949A (en) * 2013-07-10 2013-11-06 燕山大学 Multifunctional expandable energy-saving hydraulic pressure integrated circuit
CN104406050A (en) * 2014-11-07 2015-03-11 合肥大安印刷有限责任公司 Working gas shunting system
CN121065670A (en) * 2019-08-12 2025-12-05 Meo工程股份有限公司 Method and apparatus for precursor gas injection

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