CN100407373C - Fluid Control Devices and Heat Treatment Devices - Google Patents
Fluid Control Devices and Heat Treatment Devices Download PDFInfo
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- CN100407373C CN100407373C CN038000679A CN03800067A CN100407373C CN 100407373 C CN100407373 C CN 100407373C CN 038000679 A CN038000679 A CN 038000679A CN 03800067 A CN03800067 A CN 03800067A CN 100407373 C CN100407373 C CN 100407373C
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
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- F17D1/02—Pipe-line systems for gases or vapours
- F17D1/04—Pipe-line systems for gases or vapours for distribution of gas
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Abstract
Description
技术领域 technical field
本发明涉及流体控制装置和具有该流体控制装置的热处理装置。The present invention relates to a fluid control device and a heat treatment device having the fluid control device.
背景技术 Background technique
在半导体制造工序的成膜工序中,要组合使用多种气体,在半导体晶片上进行成膜。在成膜工序中,经常要切换使用多种气体(例如,H2、O2、SiH4、N2等),或者经常要以不同的流量使用同一种气体。In the film formation process of the semiconductor manufacturing process, a combination of various gases is used to form a film on a semiconductor wafer. In the film forming process, it is often necessary to switch to use multiple gases (for example, H 2 , O 2 , SiH 4 , N 2 , etc.), or to use the same gas at different flow rates.
图10为向半导体制造装置的反应处理炉内供给多种气体的现有的气体供给系统的系统图。气体供给系统由分别供给不同气体的多个处理气体管路a~d和供给清洗气体的清洗气体管路p构成。FIG. 10 is a system diagram of a conventional gas supply system for supplying a plurality of gases into a reaction processing furnace of a semiconductor manufacturing apparatus. The gas supply system is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line p for supplying purge gas.
在各个处理气体管路a~d中安装着质量流量控制器等流量控制器1。在流量控制器1的上游设置换向阀2、过滤器3、压力调整器4、压力传感器5和控制阀2a。而且,从清洗气体管路p分支出来的分支管路p’与流量控制器1的初始侧连接。A flow controller 1 such as a mass flow controller is installed in each of the processing gas lines a to d. Upstream of the flow controller 1 are provided a reversing valve 2, a
在图10所示的气体供给系统中,对一种气体设置一个气体管路,而且在一个气体管路上设置一个流量控制器。即,为了供给多种气体,要使用与气体种类数目对应的数目的气体管路和流量控制器。这样,会产生气体供给系统的成本提高及占地面积增大等问题。In the gas supply system shown in FIG. 10, one gas line is provided for one gas, and one flow controller is provided on one gas line. That is, in order to supply a plurality of gases, the number of gas lines and flow controllers corresponding to the number of types of gases are used. This causes problems such as an increase in the cost of the gas supply system and an increase in the floor space.
在日本国特许公报特开2000-323464号中,公开了一种在多个气体管路a、b、c中共用一个流量控制器1的气体供给系统,如图11所示。Japanese Patent Publication No. 2000-323464 discloses a gas supply system in which one flow controller 1 is shared among multiple gas pipelines a, b, c, as shown in FIG. 11 .
图11所示的气体供给系统由分别供给不同气体的多个处理气体管路a~d、供给清洗气体p的清洗气体管路p构成。在各气体管路a~d上,设置换向阀7、过滤器8、压力调整器10和压力传感器9。在气体管路a上设置着气体管路a~c共用的质量流量控制器等流量控制器6。在气体管路d上设有专用的流量控制器6。从清洗气体管路p分支出来的管路p’,与各个流量控制器6的初始侧连接。The gas supply system shown in FIG. 11 is composed of a plurality of processing gas lines a to d for supplying different gases, respectively, and a purge gas line p for supplying purge gas p. A reversing valve 7 , a filter 8 , a
采用图11所示的结构,由于气体管路a~c共用流量控制器6,因此,气体供给系统的成本降低相应的量,以及可以达到小型化。但是,在图11所示的气体供给系统中,由于各气体管路a~c具有换向阀7、过滤器8、压力调整器10和压力传感器9,所以还不能充分地使系统小型化。With the structure shown in FIG. 11 , since the gas pipelines a to c share the flow controller 6 , the cost of the gas supply system can be reduced by a corresponding amount, and miniaturization can be achieved. However, in the gas supply system shown in FIG. 11, since each gas line ac has a reversing valve 7, a filter 8, a
发明内容 Contents of the invention
本发明的目的是要使控制并供给多种气体的装置(即流体控制装置)小型化及低成本化。另外,本发明的另一个目的是提供一种可容易地与气体种类的增减相对应的流体控制装置。本发明的再一个目的是提供具有上述流体控制装置的热处理装置。An object of the present invention is to reduce the size and cost of a device for controlling and supplying a plurality of gases (ie, a fluid control device). In addition, another object of the present invention is to provide a fluid control device that can easily respond to increases and decreases in gas types. Another object of the present invention is to provide a heat treatment device having the above-mentioned fluid control device.
为了达到上述目的,本发明提供了一种流体控制装置,它具有:In order to achieve the above object, the present invention provides a fluid control device, which has:
气体管路,该气体管路具有配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和a gas line having a first region configured with a flow control mechanism, and a second region upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and
多个连接机构,该多个连接机构设置在所述气体管路的所述第二区域的上游,可分别地连接流体供给源,a plurality of connection mechanisms arranged upstream of the second region of the gas pipeline and respectively connectable to fluid supply sources,
所述连接机构由设置于所述气体管路上的多个三通阀构成;所述各三通阀分别具有第一、第二和第三孔;所述各三通阀的第一孔分别与流体供给源连接;相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;将清洗气体供给至处于最上游的三通阀的第二孔。The connecting mechanism is composed of a plurality of three-way valves arranged on the gas pipeline; each of the three-way valves has first, second and third holes; the first holes of the three-way valves are respectively connected to The fluid supply source is connected; the second hole of the upstream three-way valve among the adjacent three-way valves is connected with the third hole of the downstream three-way valve; the third hole of the most downstream three-way valve is connected with all The second area of the gas pipeline is connected; the cleaning gas is supplied to the second hole of the most upstream three-way valve.
优选为,所述气体管路具有包含所述第一和第二区域的第一部分、和从所述第一部分的上游沿着与所述第一部分垂直的方向延伸的第二部分,所述多个连接机构设置于所述第二部分。Preferably, the gas pipeline has a first portion including the first and second regions, and a second portion extending from upstream of the first portion in a direction perpendicular to the first portion, the plurality of The connecting mechanism is arranged on the second part.
另外,本发明还提供了一种流体控制装置,它包括:多个气体管路,该多个气体管路至少在第一平面上相互平行地沿第一方向延伸,这些多个气体管路各自具有:配置了流量控制机构的第一区域、和位于所述第一区域的上游并且配置有压力调整机构和压力监视机构中至少之一的第二个区域;和,多个连接机构,该多个连接机构设置于所述多个气体管路中的至少一个气体管路上,可分别连接流体供给源,In addition, the present invention also provides a fluid control device, which includes: a plurality of gas pipelines, the multiple gas pipelines extend parallel to each other along the first direction at least on the first plane, and each of the multiple gas pipelines having: a first region configured with a flow control mechanism; and a second region upstream of the first region and configured with at least one of a pressure regulating mechanism and a pressure monitoring mechanism; and, a plurality of connecting mechanisms, the plurality of A connection mechanism is arranged on at least one gas pipeline among the plurality of gas pipelines, and can be respectively connected to a fluid supply source,
所述至少一个气体管路具有:包含所述第一区域和第二区域并且在所述第一平面上沿着所述第一方向延伸的第一部分;和从所述第一部分的上游、在与所述第一平面垂直的第二平面上沿着与所述第一方向垂直的第二方向延伸的第二部分,The at least one gas pipeline has: a first portion including the first region and the second region and extending along the first direction on the first plane; a second portion extending along a second direction perpendicular to the first direction on a second plane perpendicular to the first plane,
所述多个连接机构设置于所述第二部分,The plurality of connecting mechanisms are arranged on the second part,
所述连接机构由设置于所述气体管路上的多个三通阀构成。此时,所述各三通阀分别具有第一、第二和第三孔;所述各三通阀的第一孔分别与流体供给源连接;相互邻接的三通阀中的上游的三通阀的第二孔,与处于下游的三通阀的第三孔连接;处于最下游的三通阀的第三孔,与所述气体管路的第二区域连接;将清洗气体供给至处于最上游的三通阀的第二孔。The connecting mechanism is composed of a plurality of three-way valves arranged on the gas pipeline. At this time, each of the three-way valves has first, second and third holes; the first holes of the three-way valves are respectively connected to the fluid supply source; the upstream three-way of the three-way valves adjacent to each other The second hole of the valve is connected with the third hole of the downstream three-way valve; the third hole of the most downstream three-way valve is connected with the second area of the gas pipeline; the cleaning gas is supplied to the most downstream upstream of the second port of the 3-way valve.
而且,本发明还提供了一种热处理装置,它包括:具有上述结构的流体控制装置;和通过上述流体控制装置供给流体的反应处理炉。Furthermore, the present invention also provides a heat treatment device comprising: the fluid control device having the above-mentioned structure; and a reaction treatment furnace supplied with fluid through the above-mentioned fluid control device.
附图说明 Description of drawings
图1是表示本发明的流体控制装置的一个实施方式的系统图。FIG. 1 is a system diagram showing an embodiment of a fluid control device of the present invention.
图2是表示在图1所示的流体控制装置中与多个气体供给源连接的气体管路的结构的剖面图,它是表示处理气体在气体管路中通过的状态的图。2 is a cross-sectional view showing the structure of a gas line connected to a plurality of gas supply sources in the fluid control device shown in FIG. 1 , showing a state in which process gas passes through the gas line.
图3是由箭头III方向看图2所示的气体管路的主视图。Fig. 3 is a front view of the gas pipeline shown in Fig. 2 viewed from the direction of arrow III.
图4是与图2相同的剖面图,它是表示清洗气体在气体管路中通过的状态的图。Fig. 4 is a cross-sectional view similar to Fig. 2, showing a state in which purge gas passes through a gas line.
图5是由箭头V方向看图4所示的气体管路的主视图。Fig. 5 is a front view of the gas pipeline shown in Fig. 4 viewed from the arrow V direction.
图6是表示图2所示的气体管路的其他形式的图,它是表示处理气体在气体管路中通过的状态的图。FIG. 6 is a view showing another form of the gas line shown in FIG. 2 , showing a state in which process gas passes through the gas line.
图7是表示图6的VII-VII剖面的图。FIG. 7 is a diagram showing a VII-VII cross section in FIG. 6 .
图8是与图6相同的剖面图,它是表示清洗气体在气体管路中通过的状态的图。Fig. 8 is a cross-sectional view similar to Fig. 6, showing a state in which purge gas passes through the gas line.
图9是表示图8的IX-IX截面的图。FIG. 9 is a diagram showing a section taken along line IX-IX of FIG. 8 .
图10是表示现有的气体供给系统的系统示意图。Fig. 10 is a system schematic diagram showing a conventional gas supply system.
图11是表示另一个现有的气体供给系统的系统示意图。Fig. 11 is a system schematic diagram showing another conventional gas supply system.
具体实施方式 Detailed ways
下面基于附图来说明本发明的实施方式。Embodiments of the present invention will be described below based on the drawings.
图1是表示本发明的具有流体控制装置的热处理装置的一个实施方式的系统图。热处理装置具有包含流体控制装置11的气体供给系统和反应处理炉32。反应处理炉32容纳基板并对该基板进行氧化处理或CVD等热处理,可以使用众所周知的适当的炉。FIG. 1 is a system diagram showing an embodiment of a heat treatment apparatus having a fluid control device according to the present invention. The heat treatment device has a gas supply system including a
流体控制装置11包含用于将气体供给反应处理炉32的等间隔配置的多个气体管路12、13、23。各气体管路在大概是垂直延伸的第一垂直平面内延伸。The
图1中左端的管路12是用于供给N2等清洗气体P的清洗气体管路。在清洗气体管路12上按从上游的顺序设置气体供给口12a、手动阀12b、过滤器12c、压力调整器12d、压力传感器12e、控制阀12f、流量控制器12g和过滤器12h。The
气体管路13是用于供给多种处理气体(例如H2、O2、N2、SiH4等)的处理气体管路。如图1~图5所示,处理气体管路13具有设置有流量控制器13g的流量控制系统区域(第一区域)和设在该流量控制器上游的压力控制系统区域14(第二区域)。在压力控制系统区域14中,设置手动阀13b、过滤器13c、压力调整器13d、压力传感器13e、控制阀13f、过滤器13h和控制阀13i。The
多个气体供给源A、B、C与气体管路13的上游端部连接。如图2所示,在垂直方向延伸的气体管路13,在作为其上游端部的下端部,改变大致90°的方向,沿着与上述第一垂直平面垂直的方向延伸。以下,将气体管路13的水平方向延长部分称为气体管路13的延长部15。另外,气体管路13的垂直方向延伸部分及延长部15,在与上述第一垂直平面垂直的同时,位于沿垂直方向延伸的第二垂直平面内。A plurality of gas supply sources A, B, and C are connected to the upstream end of the
在气体管路13的延长部15上,串联地设置带有致动器的三通阀17、18、19。三通阀17、18、19的第一孔17a、18a、19a分别与连接于气体供给源A、B、C的气体供给管16a、16b、16c相连接。三通阀18的第二及第三孔18b、18c,分别与三通阀17的第三孔17c及三通阀19的第二孔19b相连接。三通阀17的第二孔17b,通过带有致动器的二通阀20及单向阀21,与供给清洗气体P的管路22相连接。三通阀19的第三孔19c,与气体管路13的垂直方向延伸部分相通。On the
三通阀17、18、19的第二及第三孔17b、17c,18b、18c,19b、19c平时连通。各三通阀17、18、19的致动器,驱动内置于该三通阀的膜片形态的阀体,对第一孔与第二及第三孔连通的状态、切断该连通的状态进行切换。The second and
再参照图1,与气体管路13相邻地配置气体管路23。气体从气体供给源D供给至气体管路23。在气体供给管路23上,也与气体管路13同样,设置有气体供给口23a、手动阀23b、过滤器23c、压力调整器23d、压力传感器23e、控制阀23f和流量控制器23g。Referring again to FIG. 1 , the
如图1和图4所示,上述的管路22从清洗气体管路12分支出来,该管路22通过二通阀20,与三通阀17的第二孔17b相连接。As shown in FIGS. 1 and 4 , the above-mentioned
另外,分支管路25从清洗气体管路12分支出来。分支管路25与气体管路13的流量控制器13g的初始侧相连接,换句话说,与压力控制系统区域14的下游相连接。在分支管路25上,设置控制阀25a和单向阀25b。在多次将同一种气体从气体管路13供给至反应处理炉32时等不需要清洗压力控制系统区域14的情况下,可以在关闭控制阀13f的状态下,将清洗气体从分支管路25送入气体管路13中,可以只清洗在气体管路13的压力控制系统区域14的下游。另外,分支管路25还可在中途再分支,与气体管路23的流量控制器23g的初始侧连接。In addition, the
上述的流体控制装置11是作为单一的集成结构部件26构成的。集成结构部件26具有沿着上述第一垂直平面延伸的基板27、和沿着上述第二垂直平面延伸的基板28。基板28的宽度,与气体管路13的宽度相等。在基板27、28上安装多个接头块26a。流量控制器12g、13g、23g,手动阀12b、13b、23b,过滤器12c、13c、23c,压力调整器12d、13d、23d和三通阀17、18、19及二通阀20等功能构件,放置在块(例如阀块26b)上。这些功能构件用的块,通过接头块26a相互不漏气地连接。The
下面说明作用。The function is explained below.
在将处理气体B供给至反应处理炉32的情况下,在关闭二通阀20的状态下,打开三通阀18。处理气体B从延长部15导入至气体管路13中,在通过气体管路13的压力控制系统区域14时,控制为规定的压力,而且,利用流量控制器13控制为规定流量,最后,导入处理反应炉32内(参见图2和图3)。When the processing gas B is supplied to the
接着,在将与处理气体B不同的处理气体例如处理气体A供给至反应处理炉32的情况下,在此之前,要利用清洗气体P清洗气体管路13及其延长部15内。在这种情况下,当关闭三通阀17、18、19,打开二通阀20时,将清洗气体P供给至气体管路13及其延长部15,由此来清洗全部的气体管路13及其延长部15。这时,没有清洗气体供给不到的死(dead)区域(前面所用的处理气体B残存沉淀的区域),处理气体B不会残留在气体管路13及其延长部15内(参见图4和图5)。清洗完毕,关闭二通阀20,打开三通阀17。由此,处理气体A供给至反应处理炉32中。Next, when a processing gas different from the processing gas B, eg, processing gas A, is supplied to the
如上所述,在上述实施方式中,在一个(一个系统)气体管路上,设置有流量控制区域和压力控制系统区域,为了供给多种气体,可以共用该一个气体供给管路。因此,可以大大降低流体控制装置的成本。另外,管路数目减少,可使流体控制装置紧凑。具体地说,与图10和图11所示的现有装置相比,流体控制装置尺寸可减小图1所示的宽度X。另外,极容易增加气体种类。为了共用气体管路,必须要具备下列条件:(1)即使气体彼此混合,在气体管路内不起反应;(2)气体不能同时供给反应处理炉;(3)各种气体的流量范围接近。例如,处理气体A、B、C的组合可以为SiH4气体、Si2H2Cl气体、Si2Cl6气体的组合,或者NH3气体、N2H4气体、NXHY气体的组合。As described above, in the above embodiment, the flow rate control area and the pressure control system area are provided on one (one system) gas line, and the one gas supply line can be shared in order to supply multiple gases. Therefore, the cost of the fluid control device can be greatly reduced. In addition, the number of pipelines is reduced, making the fluid control device compact. Specifically, the size of the fluid control device can be reduced by the width X shown in FIG. 1 compared to the prior art devices shown in FIGS. 10 and 11 . In addition, it is extremely easy to add gas types. In order to share the gas pipeline, the following conditions must be met: (1) Even if the gases are mixed with each other, there is no reaction in the gas pipeline; (2) The gas cannot be supplied to the reaction treatment furnace at the same time; (3) The flow range of various gases is close to . For example, the combination of processing gases A, B, and C can be a combination of SiH 4 gas, Si 2 H 2 Cl gas, and Si 2 Cl 6 gas, or a combination of NH 3 gas, N 2 H 4 gas, and N X H Y gas .
另外,在上述实施方式中,使多种气体供给源只与一个气体管路13连接,但也可以使多种气体供给源分别与多个气体管路连接。在这种情况下,例如可使SiH4气体供给源、Si2H2Cl气体供给源和Si2Cl6气体供给源与第一气体管路13连接,使NH3气体供给源、N2H4气体供给源和NXHY气体供给源与具有与第一气体管路13相同结构的第二气体管路连接。清洗气体管路22也可与第一气体管路13同样,与第二气体管路连接。In addition, in the above-described embodiment, the multiple gas supply source is connected to only one
另外,在上述实施方式中,在压力控制系统区域设置作为压力调整装置的压力调整器13d和作为压力监视装置的压力传感器13e这两者,但不是仅限于此。例如,当处理气体为低蒸气压气体时,有时不需进行积极的压力调整,在这种情况下,也可以不设置压力调整器13d。In addition, in the above-described embodiment, both the
在上述实施方式中,作为流量控制器12g、13g、23g来说,使用质量流量控制器,但不是仅限于此,也可使用压力式流量控制器。In the above-described embodiment, mass flow controllers were used as the flow controllers 12g, 13g, and 23g, but not limited thereto, pressure-type flow controllers may also be used.
另外,作为流量控制器12g、13g、23g,最好使用数字式质量流量控制器。这样,即使对各种气体所要求的供给流量有某种程度不同,也可以与之相对应。在数字式MFC(质量流量控制器)中,只装入与基准气体和基准流量相对应的流量控制特性曲线。在将不同的气体控制为不同流量的情况下,事前用实验方法求出一种基准气体及相对于其基准流量的变换系数。而且,在将不同气体控制为不同的情况下,可根据实际的气体流量测定值和上述变换系数,计算出近似的补偿值,再基于该补偿值,修正流量控制特性曲线,进行气体流量控制。由此,可与多种不同气体和大的流量范围相对应。当然,在同一种气体控制为不同流量的情况下,也可以进行同样的控制。In addition, it is preferable to use a digital mass flow controller as the flow controllers 12g, 13g, and 23g. In this way, even if the supply flow rates required for various gases are somewhat different, it is possible to cope with them. In the digital MFC (mass flow controller), only the flow control characteristic curve corresponding to the reference gas and the reference flow is loaded. In the case of controlling different gases to have different flow rates, a reference gas and its conversion coefficient with respect to the reference flow rate are obtained experimentally in advance. Moreover, when different gases are controlled to be different, an approximate compensation value can be calculated based on the actual gas flow measurement value and the above-mentioned conversion coefficient, and then based on the compensation value, the flow control characteristic curve can be corrected to perform gas flow control. Therefore, it can correspond to a variety of different gases and a wide flow range. Of course, the same control can also be performed when the same gas is controlled to have different flow rates.
图6~图9表示流体控制装置的另一个实施方式。在这些图中,对于与图1~图5所述的构件相同的构件,用相同的标号来表示,省略重复说明。在图6~图9所示的实施方式中,在一个气体管路13上设置质量流量控制器等流量控制器13g(图6~图9中没有示出)。在流量控制器13g的上游设置压力控制系统区域14这点上是相同的。在图6~图9所示的实施方式中,在上述第一垂直平面上延伸的气体管路13,在作为其上游端部的下端部,改变大约90°方向,继续在上述第一垂直平面上向横方向延伸。以下,将气体管路13的水平方向延长部分称为延长部30。6 to 9 show another embodiment of the fluid control device. In these figures, the same components as those described in FIGS. 1 to 5 are denoted by the same reference numerals, and repeated explanations are omitted. In the embodiment shown in FIGS. 6 to 9 , a flow controller 13 g (not shown in FIGS. 6 to 9 ) such as a mass flow controller is provided on one
与处理气体供给源A、B、C分别连接的气体供给管29a、29b、29c与延长部30连接。与清洗气体供给源P连接的清洗气体供给管31,与延长部30的最上游连接。在各气体供给管29a、29b、29c、31上,分别设置二通阀32(开闭阀)。
在图6~图9所示的实施方式中,由于在气体供给管29a、29b、29c的二通阀的下游和气体管路的延长部30之间产生死区域V(气体残留沉淀的区域),所以气体残留下来(参见图6和图7)。在这种情况下,如图8和图9所示,当供给清洗气体时,残留在死区域V中的气体不能清洗到。In the embodiments shown in FIGS. 6 to 9 , a dead area V (area where gas remains and settles) is generated between the downstream of the two-way valve of the
在图6~图9所示的实施方式中,由于可以用一个(一个系统)气体管路供给不同种类的气体,所以与图1~图5所示的实施方式同样,可以降低流体控制装置的成本。但是,在图6~图9所示的实施方式中,由于气体管路的延长部30沿横方向延伸,虽有减少管路数目的效果,但基于管路数目的削减而使流体控制装置的小型化的效果与图1~图5所示的实施方式相比较差。另外,在不可避免地产生死区域V这点上,图6~图9所示的实施方式,与图1~图5所示的实施方式相比较差。In the embodiments shown in FIGS. 6 to 9 , since one (one system) gas pipeline can be used to supply different types of gases, the same as the embodiments shown in FIGS. 1 to 5 , the cost of the fluid control device can be reduced. cost. However, in the embodiments shown in FIGS. 6 to 9 , since the
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| PCT/JP2003/001338 WO2004070801A1 (en) | 2003-02-07 | 2003-02-07 | Fluid control device and heat treatment device |
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| CN1586001A CN1586001A (en) | 2005-02-23 |
| CN100407373C true CN100407373C (en) | 2008-07-30 |
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| KR (1) | KR100929713B1 (en) |
| CN (1) | CN100407373C (en) |
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| CN101175560B (en) * | 2005-05-11 | 2012-12-26 | 亚申科技研发中心(上海)有限公司 | A high throughput materials-processing system |
| WO2006119705A1 (en) * | 2005-05-11 | 2006-11-16 | Accelergy Shanghai R & D Center Co., Ltd | A high throughput materials-processing system |
| JP4355724B2 (en) * | 2006-12-25 | 2009-11-04 | シーケーディ株式会社 | Gas integrated unit |
| JP5459895B2 (en) * | 2007-10-15 | 2014-04-02 | Ckd株式会社 | Gas shunt supply unit |
| JP5216632B2 (en) * | 2009-03-03 | 2013-06-19 | 東京エレクトロン株式会社 | Fluid control device |
| JP5833403B2 (en) * | 2011-10-06 | 2015-12-16 | 株式会社堀場エステック | Fluid mechanism and support member constituting the fluid mechanism |
| US9188990B2 (en) | 2011-10-05 | 2015-11-17 | Horiba Stec, Co., Ltd. | Fluid mechanism, support member constituting fluid mechanism and fluid control system |
| CN103382949A (en) * | 2013-07-10 | 2013-11-06 | 燕山大学 | Multifunctional expandable energy-saving hydraulic pressure integrated circuit |
| CN104406050A (en) * | 2014-11-07 | 2015-03-11 | 合肥大安印刷有限责任公司 | Working gas shunting system |
| CN121065670A (en) * | 2019-08-12 | 2025-12-05 | Meo工程股份有限公司 | Method and apparatus for precursor gas injection |
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|---|---|---|---|---|
| JPH07135207A (en) * | 1993-11-11 | 1995-05-23 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device and device thereof |
| JPH112400A (en) * | 1997-06-11 | 1999-01-06 | Fujikin:Kk | Mixed gas supply device |
| JP2000322130A (en) * | 1999-05-10 | 2000-11-24 | Fujikin Inc | Variable fluid flow control method and device using flow factor |
| US6360762B2 (en) * | 1999-04-22 | 2002-03-26 | Fujikin Incorporated | Method for feeding gases for use in semiconductor manufacturing |
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| JP3472282B2 (en) * | 2001-08-30 | 2003-12-02 | 東京エレクトロン株式会社 | Fluid control device, heat treatment device, and fluid control method |
| JP4554853B2 (en) * | 2001-09-17 | 2010-09-29 | シーケーディ株式会社 | Gas supply integrated valve |
-
2003
- 2003-02-07 WO PCT/JP2003/001338 patent/WO2004070801A1/en not_active Ceased
- 2003-02-07 CN CN038000679A patent/CN100407373C/en not_active Expired - Fee Related
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07135207A (en) * | 1993-11-11 | 1995-05-23 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device and device thereof |
| JPH112400A (en) * | 1997-06-11 | 1999-01-06 | Fujikin:Kk | Mixed gas supply device |
| US6360762B2 (en) * | 1999-04-22 | 2002-03-26 | Fujikin Incorporated | Method for feeding gases for use in semiconductor manufacturing |
| JP2000322130A (en) * | 1999-05-10 | 2000-11-24 | Fujikin Inc | Variable fluid flow control method and device using flow factor |
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| KR100929713B1 (en) | 2009-12-03 |
| WO2004070801A1 (en) | 2004-08-19 |
| KR20050089894A (en) | 2005-09-09 |
| CN1586001A (en) | 2005-02-23 |
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