CN100367516C - 薄膜晶体管器件及其制造方法 - Google Patents

薄膜晶体管器件及其制造方法 Download PDF

Info

Publication number
CN100367516C
CN100367516C CNB028199944A CN02819994A CN100367516C CN 100367516 C CN100367516 C CN 100367516C CN B028199944 A CNB028199944 A CN B028199944A CN 02819994 A CN02819994 A CN 02819994A CN 100367516 C CN100367516 C CN 100367516C
Authority
CN
China
Prior art keywords
layer
electrode
electronic device
substrate
electrode layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028199944A
Other languages
English (en)
Chinese (zh)
Other versions
CN1568548A (zh
Inventor
G·F·A·范德瓦尔勒
A·H·蒙特里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of CN1568548A publication Critical patent/CN1568548A/zh
Application granted granted Critical
Publication of CN100367516C publication Critical patent/CN100367516C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Saccharide Compounds (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB028199944A 2001-10-11 2002-10-10 薄膜晶体管器件及其制造方法 Expired - Fee Related CN100367516C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01203855 2001-10-11
EP01203855.0 2001-10-11

Publications (2)

Publication Number Publication Date
CN1568548A CN1568548A (zh) 2005-01-19
CN100367516C true CN100367516C (zh) 2008-02-06

Family

ID=8181046

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028199944A Expired - Fee Related CN100367516C (zh) 2001-10-11 2002-10-10 薄膜晶体管器件及其制造方法

Country Status (8)

Country Link
US (1) US7282769B2 (enExample)
EP (1) EP1438753B1 (enExample)
JP (1) JP2005506704A (enExample)
KR (1) KR20040052226A (enExample)
CN (1) CN100367516C (enExample)
AT (1) ATE463845T1 (enExample)
DE (1) DE60235906D1 (enExample)
WO (1) WO2003034502A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661024B1 (en) * 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
US7045884B2 (en) * 2002-10-04 2006-05-16 International Rectifier Corporation Semiconductor device package
JP4729843B2 (ja) * 2003-10-15 2011-07-20 凸版印刷株式会社 薄膜トランジスタの製造方法
US7166867B2 (en) * 2003-12-05 2007-01-23 International Rectifier Corporation III-nitride device with improved layout geometry
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
EP1733334B1 (en) 2004-04-09 2011-05-25 Semiconductor Energy Laboratory Co., Ltd. Product management system
JP5041681B2 (ja) * 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7309895B2 (en) * 2005-01-25 2007-12-18 Hewlett-Packard Development Company, L.P. Semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP5200443B2 (ja) * 2007-07-30 2013-06-05 セイコーエプソン株式会社 有機トランジスタ及びアクティブマトリックス基板
JP5532553B2 (ja) * 2008-06-11 2014-06-25 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、薄膜トランジスタアレイ及び画像表示装置
JP5445590B2 (ja) * 2009-11-13 2014-03-19 株式会社島津製作所 薄膜トランジスタの製造方法
GB2480876B (en) * 2010-06-04 2015-02-25 Plastic Logic Ltd Conductive elements in organic electronic devices
KR20130051614A (ko) * 2011-11-10 2013-05-21 삼성전기주식회사 적층 세라믹 전자 부품 및 그 제조 방법
TWI532191B (zh) * 2013-12-31 2016-05-01 友達光電股份有限公司 薄膜電晶體結構
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468681A (en) * 1989-08-28 1995-11-21 Lsi Logic Corporation Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias
US6031269A (en) * 1997-04-18 2000-02-29 Advanced Micro Devices, Inc. Quadruple gate field effect transistor structure for use in integrated circuit devices
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US655365A (en) * 1899-11-14 1900-08-07 Henry M Johnson Hernial truss.
US5681718A (en) * 1986-03-14 1997-10-28 Celltech Limited Methods for enhanced production of tissue plasminogen activator in cell culture using alkanoic acids or salts thereof
US5650323A (en) * 1991-06-26 1997-07-22 Costar Corporation System for growing and manipulating tissue cultures using 96-well format equipment
US5707869A (en) * 1994-06-28 1998-01-13 Wolf; Martin L. Compartmentalized multiple well tissue culture plate
JP3372258B2 (ja) * 1995-08-04 2003-01-27 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン リソグラフィ・プロセス用のスタンプ
EP0958663A1 (en) * 1997-12-05 1999-11-24 Koninklijke Philips Electronics N.V. Identification transponder
US7122835B1 (en) * 1999-04-07 2006-10-17 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device and a method of manufacturing the same
KR100315208B1 (ko) * 1999-12-17 2001-11-26 구본준, 론 위라하디락사 액정표시소자 및 그 제조방법
WO2003036265A2 (en) * 2001-10-26 2003-05-01 Virtual Arrays, Inc. Assay systems with adjustable fluid communication
IL136232A0 (en) * 2000-05-18 2001-05-20 Bar Ilan University Res Author Measurements of enzymatic activity in a single, individual cell in population
EP1330306A2 (en) * 2000-10-10 2003-07-30 BioTrove, Inc. Apparatus for assay, synthesis and storage, and methods of manufacture, use, and manipulation thereof
US6495340B2 (en) * 2000-11-28 2002-12-17 Medis El Ltd. Cell carrier grids
US6544788B2 (en) * 2001-02-15 2003-04-08 Vijay Singh Disposable perfusion bioreactor for cell culture
US6982194B2 (en) * 2001-03-27 2006-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
ES2259085T3 (es) * 2001-06-14 2006-09-16 Millipore Corporation Aparato de ensayo multipocillo.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468681A (en) * 1989-08-28 1995-11-21 Lsi Logic Corporation Process for interconnecting conductive substrates using an interposer having conductive plastic filled vias
US6031269A (en) * 1997-04-18 2000-02-29 Advanced Micro Devices, Inc. Quadruple gate field effect transistor structure for use in integrated circuit devices
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors

Also Published As

Publication number Publication date
US7282769B2 (en) 2007-10-16
EP1438753A1 (en) 2004-07-21
ATE463845T1 (de) 2010-04-15
KR20040052226A (ko) 2004-06-22
DE60235906D1 (de) 2010-05-20
WO2003034502A1 (en) 2003-04-24
JP2005506704A (ja) 2005-03-03
US20040245519A1 (en) 2004-12-09
CN1568548A (zh) 2005-01-19
EP1438753B1 (en) 2010-04-07

Similar Documents

Publication Publication Date Title
CN100367516C (zh) 薄膜晶体管器件及其制造方法
US7700403B2 (en) Manufacturing method of semiconductor device
US7298013B2 (en) Compound used to form a self-assembled monolayer, layer structure, semiconductor component having a layer structure, and method for producing a layer structure
WO2005024956A1 (ja) 電極基板、薄膜トランジスタ、表示装置、及びその製造方法
JP2005277238A (ja) 薄膜トランジスタおよびそれを用いた半導体装置
CN101582391B (zh) 图样形成方法、半导体装置制造方法以及显示器制造方法
CN100565312C (zh) 用于有机薄膜晶体管液晶显示器的阵列基板及其制造方法
JP4431081B2 (ja) 有機薄膜トランジスタの製造方法及び液晶表示素子の製造方法
KR100675639B1 (ko) 유기 박막트랜지스터 및 액정표시소자의 제조방법
US7582509B2 (en) Micro-embossing fabrication of electronic devices
CN111128707A (zh) 元件制造方法及转印基板
US8013327B2 (en) Electronic device
EP1815541B1 (en) Self-aligned process to manufacture organic transistors
JP2009026899A (ja) 積層構造体、電子素子、電子素子アレイ及び表示装置
JP2007103947A (ja) 薄膜トランジスタおよび電子デバイスを製造するための方法
US20060199322A1 (en) Method of manufacturing semiconductor device including air space formed around gate electrode
WO2019229256A1 (en) Transistor arrays
JP2006186293A (ja) 薄膜トランジスタの製造方法
JP5458296B2 (ja) 微細加工構造及びその加工方法並びに電子デバイス及びその製造方法
KR20070067875A (ko) 박막 패턴 제조 방법
US20080230771A1 (en) Thin film transistor and method for manufacturing the same
KR20090027288A (ko) 표시장치 및 이의 제조 방법
JP2006269476A (ja) 薄膜トランジスタの製造方法
TW518760B (en) Solution processing
HK1231252A1 (en) Device manufacturing method and transfer substrate

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20080206

Termination date: 20101010