ATE463845T1 - Dünnfilmtranistor-bauelement und diesbezügliches verfahren - Google Patents

Dünnfilmtranistor-bauelement und diesbezügliches verfahren

Info

Publication number
ATE463845T1
ATE463845T1 AT02772725T AT02772725T ATE463845T1 AT E463845 T1 ATE463845 T1 AT E463845T1 AT 02772725 T AT02772725 T AT 02772725T AT 02772725 T AT02772725 T AT 02772725T AT E463845 T1 ATE463845 T1 AT E463845T1
Authority
AT
Austria
Prior art keywords
tranistor
component
thin film
related method
substrates
Prior art date
Application number
AT02772725T
Other languages
German (de)
English (en)
Inventor
De Walle Gerjan Van
Andreas Montree
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE463845T1 publication Critical patent/ATE463845T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Saccharide Compounds (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
AT02772725T 2001-10-11 2002-10-10 Dünnfilmtranistor-bauelement und diesbezügliches verfahren ATE463845T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01203855 2001-10-11
PCT/IB2002/004169 WO2003034502A1 (en) 2001-10-11 2002-10-10 Thin film transistor device and method of manufacturing same

Publications (1)

Publication Number Publication Date
ATE463845T1 true ATE463845T1 (de) 2010-04-15

Family

ID=8181046

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02772725T ATE463845T1 (de) 2001-10-11 2002-10-10 Dünnfilmtranistor-bauelement und diesbezügliches verfahren

Country Status (8)

Country Link
US (1) US7282769B2 (enExample)
EP (1) EP1438753B1 (enExample)
JP (1) JP2005506704A (enExample)
KR (1) KR20040052226A (enExample)
CN (1) CN100367516C (enExample)
AT (1) ATE463845T1 (enExample)
DE (1) DE60235906D1 (enExample)
WO (1) WO2003034502A1 (enExample)

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JP4729843B2 (ja) * 2003-10-15 2011-07-20 凸版印刷株式会社 薄膜トランジスタの製造方法
US7166867B2 (en) * 2003-12-05 2007-01-23 International Rectifier Corporation III-nitride device with improved layout geometry
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
US8237569B2 (en) * 2004-04-09 2012-08-07 Semiconductor Energy Laboratory Co., Ltd. Product management system
JP5041681B2 (ja) * 2004-06-29 2012-10-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7309895B2 (en) * 2005-01-25 2007-12-18 Hewlett-Packard Development Company, L.P. Semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
JP4951868B2 (ja) * 2005-03-18 2012-06-13 凸版印刷株式会社 薄膜トランジスタの製造方法
US8414962B2 (en) 2005-10-28 2013-04-09 The Penn State Research Foundation Microcontact printed thin film capacitors
JP5200443B2 (ja) * 2007-07-30 2013-06-05 セイコーエプソン株式会社 有機トランジスタ及びアクティブマトリックス基板
JP5532553B2 (ja) * 2008-06-11 2014-06-25 凸版印刷株式会社 薄膜トランジスタ、薄膜トランジスタの製造方法、薄膜トランジスタアレイ及び画像表示装置
WO2011058611A1 (ja) * 2009-11-13 2011-05-19 株式会社島津製作所 薄膜トランジスタの製造方法
GB2480876B (en) * 2010-06-04 2015-02-25 Plastic Logic Ltd Conductive elements in organic electronic devices
KR20130051614A (ko) * 2011-11-10 2013-05-21 삼성전기주식회사 적층 세라믹 전자 부품 및 그 제조 방법
TWI532191B (zh) * 2013-12-31 2016-05-01 友達光電股份有限公司 薄膜電晶體結構
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

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Also Published As

Publication number Publication date
EP1438753B1 (en) 2010-04-07
EP1438753A1 (en) 2004-07-21
DE60235906D1 (de) 2010-05-20
WO2003034502A1 (en) 2003-04-24
KR20040052226A (ko) 2004-06-22
JP2005506704A (ja) 2005-03-03
US20040245519A1 (en) 2004-12-09
US7282769B2 (en) 2007-10-16
CN100367516C (zh) 2008-02-06
CN1568548A (zh) 2005-01-19

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