ATE407097T1 - Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen - Google Patents

Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Info

Publication number
ATE407097T1
ATE407097T1 AT03744229T AT03744229T ATE407097T1 AT E407097 T1 ATE407097 T1 AT E407097T1 AT 03744229 T AT03744229 T AT 03744229T AT 03744229 T AT03744229 T AT 03744229T AT E407097 T1 ATE407097 T1 AT E407097T1
Authority
AT
Austria
Prior art keywords
silicon carbide
microelectromechanical
electronic circuits
etch rate
substrate
Prior art date
Application number
AT03744229T
Other languages
English (en)
Inventor
Kevin Kornegay
Andrew Ryan Atwell
Mihaela Balseanu
Jon Duster
Eskinder Hailu
Ce Li
Original Assignee
Cornell Res Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Res Foundation Inc filed Critical Cornell Res Foundation Inc
Application granted granted Critical
Publication of ATE407097T1 publication Critical patent/ATE407097T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Ceramic Products (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
AT03744229T 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen ATE407097T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US36261802P 2002-03-08 2002-03-08

Publications (1)

Publication Number Publication Date
ATE407097T1 true ATE407097T1 (de) 2008-09-15

Family

ID=27805204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03744229T ATE407097T1 (de) 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Country Status (8)

Country Link
US (2) US7170141B2 (de)
EP (1) EP1487738B1 (de)
JP (1) JP2005519778A (de)
CN (1) CN1652995A (de)
AT (1) ATE407097T1 (de)
AU (1) AU2003231965A1 (de)
DE (1) DE60323344D1 (de)
WO (1) WO2003076330A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003076330A2 (en) * 2002-03-08 2003-09-18 Cornell Research Foundation, Inc. Silicon carbide microelectromechanical devices with electronic circuitry
US7307425B2 (en) * 2003-11-18 2007-12-11 Halliburton Energy Services, Inc. Receiver electronics proximate antenna
US8154092B2 (en) 2004-08-09 2012-04-10 Case Western Reserve University Silicon carbide MEMS structures and methods of forming the same
US7616013B2 (en) * 2004-11-11 2009-11-10 Brigham Young University Micromechanical positional state sensing apparatus method and system
ES2299298B1 (es) * 2005-07-21 2009-04-01 Universitat Autonoma De Barcelona Procedimiento de integracion monolitica de materiales de alta calidad mecanica con circuitos integrados para aplicaciones mems/nems.
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20070287301A1 (en) * 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
US8044755B2 (en) * 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US7705411B2 (en) * 2008-04-09 2010-04-27 National Semiconductor Corporation MEMS-topped integrated circuit with a stress relief layer
US8897470B2 (en) * 2009-07-31 2014-11-25 Macronix International Co., Ltd. Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit
CN103430308B (zh) 2010-12-01 2017-02-15 康奈尔大学 用于电且机械连接的单片集成晶体管和mems/nems器件的结构和方法
US8754421B2 (en) 2012-02-24 2014-06-17 Raytheon Company Method for processing semiconductors using a combination of electron beam and optical lithography
JP6712650B2 (ja) * 2016-12-14 2020-06-24 株式会社日立製作所 半導体装置およびその製造方法並びにセンサ

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165283A (en) * 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide
US6034001A (en) * 1991-10-16 2000-03-07 Kulite Semiconductor Products, Inc. Method for etching of silicon carbide semiconductor using selective etching of different conductivity types
US5465249A (en) * 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) * 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5303594A (en) * 1992-08-11 1994-04-19 Kulite Semiconductor Products, Inc. Pressure transducer utilizing diamond piezoresistive sensors and silicon carbide force collector
US5454915A (en) * 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
US5298767A (en) * 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5386142A (en) * 1993-05-07 1995-01-31 Kulite Semiconductor Products, Inc. Semiconductor structures having environmentally isolated elements and method for making the same
US5549006A (en) * 1994-05-24 1996-08-27 Kulite Semiconductor Products, Inc. Temperature compensated silicon carbide pressure transducer and method for making the same
US5750896A (en) * 1994-07-22 1998-05-12 Hughes Aircraft Company Tool joint sensor
US5604144A (en) * 1995-05-19 1997-02-18 Kulite Semiconductor Products, Inc. Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
US6691581B2 (en) * 1995-05-25 2004-02-17 Kulite Semiconductor Products, Inc. Pressure transducer fabricated from beta silicon carbide
US6327911B1 (en) * 1995-05-25 2001-12-11 Kulite Semiconductor Products High temperature pressure transducer fabricated from beta silicon carbide
US6229427B1 (en) * 1995-07-13 2001-05-08 Kulite Semiconductor Products Inc. Covered sealed pressure transducers and method for making same
US5963788A (en) * 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5614678A (en) * 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
US5622902A (en) * 1996-03-14 1997-04-22 Kulite Semiconductor Products, Inc. Passivation/patterning of PZR diamond films for high temperature operability
US5955771A (en) * 1997-11-12 1999-09-21 Kulite Semiconductor Products, Inc. Sensors for use in high vibrational applications and methods for fabricating same
US6171972B1 (en) * 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
US6058782A (en) * 1998-09-25 2000-05-09 Kulite Semiconductor Products Hermetically sealed ultra high temperature silicon carbide pressure transducers and method for fabricating same
JP2000199505A (ja) * 1999-01-07 2000-07-18 Funagata Kagaku Kenkyusho:Kk 物体の流体摩擦抵抗低減装置
US6235611B1 (en) * 1999-01-12 2001-05-22 Kulite Semiconductor Products Inc. Method for making silicon-on-sapphire transducers
US6363792B1 (en) 1999-01-29 2002-04-02 Kulite Semiconductor Products, Inc. Ultra high temperature transducer structure
US6272929B1 (en) * 1999-02-04 2001-08-14 Kulite Semiconductor Products High pressure piezoresistive transducer suitable for use in hostile environments
US6612179B1 (en) * 1999-06-23 2003-09-02 Kulite Semiconductor Products, Inc. Method and apparatus for the determination of absolute pressure and differential pressure therefrom
DE19940581C2 (de) * 1999-08-26 2001-07-26 Infineon Technologies Ag Verfahren zur Herstellung integrierter Sensoren
US6853067B1 (en) * 1999-10-12 2005-02-08 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US6293154B1 (en) * 1999-12-10 2001-09-25 Kulite Semiconductor Products Vibration compensated pressure sensing assembly
US6272928B1 (en) * 2000-01-24 2001-08-14 Kulite Semiconductor Products Hermetically sealed absolute and differential pressure transducer
US6306773B1 (en) * 2000-02-01 2001-10-23 Adaas Christian Method of producing a semiconductor device of SiC
US6544674B2 (en) * 2000-08-28 2003-04-08 Boston Microsystems, Inc. Stable electrical contact for silicon carbide devices
US6577224B2 (en) * 2001-03-22 2003-06-10 Kulite Semiconductor Products, Inc. Ultra high pressure transducers
US6601455B2 (en) * 2001-03-22 2003-08-05 Kulite Semiconductor Products, Inc. Force transducer with environmental protection
US6794271B2 (en) * 2001-09-28 2004-09-21 Rockwell Automation Technologies, Inc. Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge
US6588281B2 (en) * 2001-10-24 2003-07-08 Kulite Semiconductor Products, Inc. Double stop structure for a pressure transducer
US6690178B2 (en) * 2001-10-26 2004-02-10 Rockwell Automation Technologies, Inc. On-board microelectromechanical system (MEMS) sensing device for power semiconductors
US6689669B2 (en) * 2001-11-03 2004-02-10 Kulite Semiconductor Products, Inc. High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
US6564644B1 (en) * 2001-12-21 2003-05-20 Kulite Semiconductor Products, Inc. High temperature surface mount transducer
US20030141802A1 (en) * 2002-01-28 2003-07-31 John Liebeskind Electronic device having a getter used as a circuit element
WO2003076330A2 (en) * 2002-03-08 2003-09-18 Cornell Research Foundation, Inc. Silicon carbide microelectromechanical devices with electronic circuitry
US6595066B1 (en) * 2002-04-05 2003-07-22 Kulite Semiconductor Products, Inc. Stopped leadless differential sensor

Also Published As

Publication number Publication date
AU2003231965A1 (en) 2003-09-22
EP1487738B1 (de) 2008-09-03
WO2003076330A2 (en) 2003-09-18
WO2003076330A3 (en) 2004-08-19
US7170141B2 (en) 2007-01-30
AU2003231965A8 (en) 2003-09-22
EP1487738A2 (de) 2004-12-22
DE60323344D1 (de) 2008-10-16
CN1652995A (zh) 2005-08-10
US7615788B2 (en) 2009-11-10
JP2005519778A (ja) 2005-07-07
US20080093605A1 (en) 2008-04-24
US20040077164A1 (en) 2004-04-22

Similar Documents

Publication Publication Date Title
DE60323344D1 (de) Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen
TWI268729B (en) Protected organic electronic devices and methods for making the same
WO2005050714A3 (en) High temperature electronic devices
WO2005057631A3 (en) Planar substrate with selected semiconductor crystal orientations formed by localized amorphzation and recrystallization of stacked template layers
TW200625400A (en) Integrated passive devices
DE60235906D1 (de) Erfahren
TW200625535A (en) Method for manufacturing semiconductor device, and semiconductor device and electronic device
TW200715514A (en) Semiconductor chip, display panel using the same, and methods of manufacturing semiconductor chip and display panel using the same
ATE427560T1 (de) Elektronische vorrichtung, anordnung und verfahren zum herstellen einer elektronischen vorrichtung
WO2006055476A3 (en) Method of integrating optical devices and electronic devices on an integrated circuit
AU2003231810A1 (en) Microwave field effect transistor structure on silicon carbide substrate
TW200509391A (en) A device having multiple silicide types and a method for its fabrication
TW200509740A (en) Process for removing an organic layer during fabrication of an organic electronic device and the organic electronic device formed by the process
TW200512801A (en) Fabrication of semiconductor devices
WO2004006633A3 (en) Integrated circuit including field effect transistor and method of manufacture
TW200620653A (en) Method of forming a raised source/drain and a semiconductor device employing the same
TW200601410A (en) Semiconductor device and method for manufacturing same
TW200616028A (en) Passive device and method for forming the same
WO2004059728A3 (en) Method of fabricating an integrated circuit and semiconductor chip
TW200509390A (en) Varying carrier mobility in semiconductor devices to achieve overall design goals
EP1335436A3 (de) Verfahren zur Herstellung einer integrierten Anordnung mit einem OLED-Display und einem Touchscreen
TW200629432A (en) Method of manufacturing a wiring substrate and an electronic instrument
TW200608454A (en) Semiconductor device, and fabrication method of semiconductor device
MX2007003615A (es) Circuito integrado y metodo de fabricacion.
TW200639476A (en) Display device and wiring structure and method for forming the same

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties