DE60323344D1 - Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen - Google Patents

Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Info

Publication number
DE60323344D1
DE60323344D1 DE60323344T DE60323344T DE60323344D1 DE 60323344 D1 DE60323344 D1 DE 60323344D1 DE 60323344 T DE60323344 T DE 60323344T DE 60323344 T DE60323344 T DE 60323344T DE 60323344 D1 DE60323344 D1 DE 60323344D1
Authority
DE
Germany
Prior art keywords
silicon carbide
microelectromechanical
electronic circuits
etch rate
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60323344T
Other languages
English (en)
Inventor
Kevin Kornegay
Andrew Ryan Atwell
Mihaela Balseanu
Jon Duster
Eskinder Hailu
Ce Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cornell Research Foundation Inc
Original Assignee
Cornell Research Foundation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cornell Research Foundation Inc filed Critical Cornell Research Foundation Inc
Application granted granted Critical
Publication of DE60323344D1 publication Critical patent/DE60323344D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Ceramic Products (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Pressure Sensors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
DE60323344T 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen Expired - Lifetime DE60323344D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US36261802P 2002-03-08 2002-03-08
PCT/US2003/006972 WO2003076330A2 (en) 2002-03-08 2003-03-07 Silicon carbide microelectromechanical devices with electronic circuitry

Publications (1)

Publication Number Publication Date
DE60323344D1 true DE60323344D1 (de) 2008-10-16

Family

ID=27805204

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323344T Expired - Lifetime DE60323344D1 (de) 2002-03-08 2003-03-07 Mikroelektromechanische siliziumcarbidbauteile mit elektronischen schaltungen

Country Status (8)

Country Link
US (2) US7170141B2 (de)
EP (1) EP1487738B1 (de)
JP (1) JP2005519778A (de)
CN (1) CN1652995A (de)
AT (1) ATE407097T1 (de)
AU (1) AU2003231965A1 (de)
DE (1) DE60323344D1 (de)
WO (1) WO2003076330A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7170141B2 (en) * 2002-03-08 2007-01-30 Cornell Research Foundation, Inc. Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
US7301223B2 (en) * 2003-11-18 2007-11-27 Halliburton Energy Services, Inc. High temperature electronic devices
US8154092B2 (en) 2004-08-09 2012-04-10 Case Western Reserve University Silicon carbide MEMS structures and methods of forming the same
US7616013B2 (en) * 2004-11-11 2009-11-10 Brigham Young University Micromechanical positional state sensing apparatus method and system
ES2299298B1 (es) * 2005-07-21 2009-04-01 Universitat Autonoma De Barcelona Procedimiento de integracion monolitica de materiales de alta calidad mecanica con circuitos integrados para aplicaciones mems/nems.
US7780865B2 (en) * 2006-03-31 2010-08-24 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
US20070287301A1 (en) 2006-03-31 2007-12-13 Huiwen Xu Method to minimize wet etch undercuts and provide pore sealing of extreme low k (k<2.5) dielectrics
US7601651B2 (en) * 2006-03-31 2009-10-13 Applied Materials, Inc. Method to improve the step coverage and pattern loading for dielectric films
TWI308800B (en) * 2006-10-26 2009-04-11 Ind Tech Res Inst Method for making thin film transistor and structure of the same
US7705411B2 (en) * 2008-04-09 2010-04-27 National Semiconductor Corporation MEMS-topped integrated circuit with a stress relief layer
US8044755B2 (en) * 2008-04-09 2011-10-25 National Semiconductor Corporation MEMS power inductor
US8897470B2 (en) * 2009-07-31 2014-11-25 Macronix International Co., Ltd. Method of fabricating integrated semiconductor device with MOS, NPN BJT, LDMOS, pre-amplifier and MEMS unit
WO2012075272A2 (en) 2010-12-01 2012-06-07 Cornell University Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices
US8754421B2 (en) 2012-02-24 2014-06-17 Raytheon Company Method for processing semiconductors using a combination of electron beam and optical lithography
US11380764B2 (en) 2016-12-14 2022-07-05 Hitachi, Ltd. Semiconductor device, method of manufacturing same, and sensor

Family Cites Families (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5165283A (en) 1991-05-02 1992-11-24 Kulite Semiconductor Products, Inc. High temperature transducers and methods of fabricating the same employing silicon carbide
US6034001A (en) 1991-10-16 2000-03-07 Kulite Semiconductor Products, Inc. Method for etching of silicon carbide semiconductor using selective etching of different conductivity types
US5465249A (en) 1991-11-26 1995-11-07 Cree Research, Inc. Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
US6344663B1 (en) 1992-06-05 2002-02-05 Cree, Inc. Silicon carbide CMOS devices
US5303594A (en) 1992-08-11 1994-04-19 Kulite Semiconductor Products, Inc. Pressure transducer utilizing diamond piezoresistive sensors and silicon carbide force collector
US5454915A (en) 1992-10-06 1995-10-03 Kulite Semiconductor Products, Inc. Method of fabricating porous silicon carbide (SiC)
US5298767A (en) 1992-10-06 1994-03-29 Kulite Semiconductor Products, Inc. Porous silicon carbide (SiC) semiconductor device
US5386142A (en) 1993-05-07 1995-01-31 Kulite Semiconductor Products, Inc. Semiconductor structures having environmentally isolated elements and method for making the same
US5549006A (en) 1994-05-24 1996-08-27 Kulite Semiconductor Products, Inc. Temperature compensated silicon carbide pressure transducer and method for making the same
US5750896A (en) * 1994-07-22 1998-05-12 Hughes Aircraft Company Tool joint sensor
US5604144A (en) 1995-05-19 1997-02-18 Kulite Semiconductor Products, Inc. Method for fabricating active devices on a thin membrane structure using porous silicon or porous silicon carbide
US6691581B2 (en) 1995-05-25 2004-02-17 Kulite Semiconductor Products, Inc. Pressure transducer fabricated from beta silicon carbide
US6327911B1 (en) 1995-05-25 2001-12-11 Kulite Semiconductor Products High temperature pressure transducer fabricated from beta silicon carbide
US6229427B1 (en) 1995-07-13 2001-05-08 Kulite Semiconductor Products Inc. Covered sealed pressure transducers and method for making same
US5963788A (en) 1995-09-06 1999-10-05 Sandia Corporation Method for integrating microelectromechanical devices with electronic circuitry
US5614678A (en) 1996-02-05 1997-03-25 Kulite Semiconductor Products, Inc. High pressure piezoresistive transducer
US5622902A (en) 1996-03-14 1997-04-22 Kulite Semiconductor Products, Inc. Passivation/patterning of PZR diamond films for high temperature operability
US5955771A (en) 1997-11-12 1999-09-21 Kulite Semiconductor Products, Inc. Sensors for use in high vibrational applications and methods for fabricating same
US6171972B1 (en) 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
US6058782A (en) 1998-09-25 2000-05-09 Kulite Semiconductor Products Hermetically sealed ultra high temperature silicon carbide pressure transducers and method for fabricating same
JP2000199505A (ja) * 1999-01-07 2000-07-18 Funagata Kagaku Kenkyusho:Kk 物体の流体摩擦抵抗低減装置
US6235611B1 (en) 1999-01-12 2001-05-22 Kulite Semiconductor Products Inc. Method for making silicon-on-sapphire transducers
US6363792B1 (en) 1999-01-29 2002-04-02 Kulite Semiconductor Products, Inc. Ultra high temperature transducer structure
US6272929B1 (en) 1999-02-04 2001-08-14 Kulite Semiconductor Products High pressure piezoresistive transducer suitable for use in hostile environments
US6612179B1 (en) 1999-06-23 2003-09-02 Kulite Semiconductor Products, Inc. Method and apparatus for the determination of absolute pressure and differential pressure therefrom
DE19940581C2 (de) 1999-08-26 2001-07-26 Infineon Technologies Ag Verfahren zur Herstellung integrierter Sensoren
US6853067B1 (en) * 1999-10-12 2005-02-08 Microassembly Technologies, Inc. Microelectromechanical systems using thermocompression bonding
US6293154B1 (en) 1999-12-10 2001-09-25 Kulite Semiconductor Products Vibration compensated pressure sensing assembly
US6272928B1 (en) 2000-01-24 2001-08-14 Kulite Semiconductor Products Hermetically sealed absolute and differential pressure transducer
US6306773B1 (en) 2000-02-01 2001-10-23 Adaas Christian Method of producing a semiconductor device of SiC
US6544674B2 (en) * 2000-08-28 2003-04-08 Boston Microsystems, Inc. Stable electrical contact for silicon carbide devices
US6577224B2 (en) 2001-03-22 2003-06-10 Kulite Semiconductor Products, Inc. Ultra high pressure transducers
US6601455B2 (en) 2001-03-22 2003-08-05 Kulite Semiconductor Products, Inc. Force transducer with environmental protection
US6794271B2 (en) * 2001-09-28 2004-09-21 Rockwell Automation Technologies, Inc. Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge
US6588281B2 (en) 2001-10-24 2003-07-08 Kulite Semiconductor Products, Inc. Double stop structure for a pressure transducer
US6690178B2 (en) * 2001-10-26 2004-02-10 Rockwell Automation Technologies, Inc. On-board microelectromechanical system (MEMS) sensing device for power semiconductors
US6689669B2 (en) 2001-11-03 2004-02-10 Kulite Semiconductor Products, Inc. High temperature sensors utilizing doping controlled, dielectrically isolated beta silicon carbide (SiC) sensing elements on a specifically selected high temperature force collecting membrane
US6564644B1 (en) 2001-12-21 2003-05-20 Kulite Semiconductor Products, Inc. High temperature surface mount transducer
US20030141802A1 (en) * 2002-01-28 2003-07-31 John Liebeskind Electronic device having a getter used as a circuit element
US7170141B2 (en) * 2002-03-08 2007-01-30 Cornell Research Foundation, Inc. Method for monolithically integrating silicon carbide microelectromechanical devices with electronic circuitry
US6595066B1 (en) 2002-04-05 2003-07-22 Kulite Semiconductor Products, Inc. Stopped leadless differential sensor

Also Published As

Publication number Publication date
US20040077164A1 (en) 2004-04-22
WO2003076330A2 (en) 2003-09-18
AU2003231965A1 (en) 2003-09-22
JP2005519778A (ja) 2005-07-07
US7615788B2 (en) 2009-11-10
EP1487738B1 (de) 2008-09-03
CN1652995A (zh) 2005-08-10
EP1487738A2 (de) 2004-12-22
US20080093605A1 (en) 2008-04-24
US7170141B2 (en) 2007-01-30
WO2003076330A3 (en) 2004-08-19
AU2003231965A8 (en) 2003-09-22
ATE407097T1 (de) 2008-09-15

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