JP2005519778A - 電子回路を有する炭化ケイ素超小型電気機械デバイス - Google Patents
電子回路を有する炭化ケイ素超小型電気機械デバイス Download PDFInfo
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- JP2005519778A JP2005519778A JP2003574560A JP2003574560A JP2005519778A JP 2005519778 A JP2005519778 A JP 2005519778A JP 2003574560 A JP2003574560 A JP 2003574560A JP 2003574560 A JP2003574560 A JP 2003574560A JP 2005519778 A JP2005519778 A JP 2005519778A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
- B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
- B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
- B81C2203/0735—Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Micromachines (AREA)
- Ceramic Products (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Pressure Sensors (AREA)
- Carbon And Carbon Compounds (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
N+(窒素):4X1015cm-2@30keV, 6X1015cm-2@65keV, 8X1015 cm-2@115keV及び1.4X1016 cm-2@190keV.
Pウェル(ホウ素):3.75X1012cm-2@15keV, 6.3X1012cm-2@35keV, 9.3X1012cm-2@70keV, 1.44X1013cm-2@125keV, 2.69X1013 cm-2@230keV及び6X1013cm-2@ 360keV.
Nしきい値調整インプラント(窒素):1x1012cm-2@23keV, 1.5x1012 cm-2@58keV, 2x1012 cm-2@110keV及び3.8x1012 cm-2@190keV.
イオンインプランテーションの後にRCA洗浄を行った後、二酸化ケイ素の薄い(200オングストローム以下)層を熱成長させ、HFディップにより剥ぎ取る。アルゴン雰囲気中において1600℃で30分間、ブラケット「インプラント活性化」行う。第2のRCA洗浄後、成長(1150℃で2時間)及び堆積ゲートの酸化(800℃)の組み合わせにより、全厚が750オングストロームのゲート誘電層を形成する。P+のドーピングを施したポリシリコンを用いてゲート電極を形成する。アルミニウム及びチタンを用いてP+及びN+領域のオーミックコンタクトを形成し、白金を両方の金属レベルの相互接続金属として使用する。
Claims (28)
- エッチング速度が遅い炭化ケイ素基板上に電子デバイスと超小型電気機械デバイスを形成する方法であって、
基板上に回路を形成し、
回路上に炭化ケイ素基板よりエッチング速度が遅い保護層を形成し、
基板により支持される超小型電気機械構造を形成するステップより成る方法。 - 回路は電界効果トランジスタより成る請求項1の方法。
- 保護層は重金属層より成る請求項1の方法。
- 保護層は電気メッキされる請求項3の方法。
- 保護層のエッチング速度は毎分約1マイクロメートルである請求項3の方法。
- 保護層はニッケルより成る請求項3の方法。
- 保護層は約10マイクロメートルの厚さに形成される請求項1の方法。
- 超小型電気機械構造はセンサーを構成する請求項1の方法。
- 超小型電気機械構造は、圧電歪センサー及び静電感知領域より成る群から選択される請求項1の方法。
- 回路は温度補償MOSデバイスより成る請求項1の方法。
- 回路は280℃またはそれより高い温度で機能する請求項10の方法。
- 基板上に炭化ケイ素のエピタキシャル層を形成するステップをさらに含む請求項11の方法。
- イオンインプランテーションにより基板に不純物をインプラントするステップをさらに含む請求項11の方法。
- 回路は保護層及び超小型電気機械構造の形成前に形成される請求項1の方法。
- 保護層は超小型電気機械構造の形成前に形成される請求項1の方法。
- 超小型電気機械構造の一部は回路を形成する前に形成される請求項1の方法。
- 炭化ケイ素基板上にデバイスを形成する方法であって、
イオンインプランテーションまたは選択エピタキシャル成長により電界効果トランジスタのウェルを形成し、
電界効果トランジスタのしきい値を調整し、
電界効果トランジスタの電極を形成し、
オーミックコンタクトを形成し、
ソース/ドレイン及び多数のゲートビアを画定し、
金属間ビアを形成し、
保護金属層を形成し、
保護金属層の上に誘電層を形成し、
保護金属層を形成した後、超小型電気機械デバイスを形成するステップより成る炭化ケイ素基板上にデバイスを形成する方法。 - 超小型電気機械デバイスは、トランジスタが形成される面とは反対側の基板面に形成される請求項17の方法。
- 保護層は電気メッキされる請求項17の方法。
- 保護層のエッチング速度は毎分約1マイクロメートルである請求項17の方法。
- 保護層はニッケルより成る請求項17の方法。
- 保護層は約10マイクロメートルの厚さに形成される請求項17の方法。
- 超小型電気機械構造はセンサーを構成する請求項17の方法。
- 超小型電気機械構造は、圧電歪センサー及び静電感知領域より成る群から選択される請求項17の方法。
- 回路は温度補償MOSデバイスより成る請求項17の方法。
- 基板上に炭化ケイ素のエピタキシャル層を形成するステップをさらに含む請求項17の方法。
- 炭化ケイ素基板上にデバイスを形成する方法であって、
イオンインプランテーションまたは選択エピタキシャル成長により電界効果トランジスタのウェルを形成し、
電界効果トランジスタのしきい値を調整し、
電界効果トランジスタの電極を形成し、
オーミックコンタクトを形成し、
ソース/ドレイン及び多数のゲートビアを画定し、
金属間ビアを形成し、
保護金属層を形成し、
保護金属層の上に誘電層を形成し、
金属アースプレーンへのビアを形成し、
構造層を形成し、
構造層を解放するステップより成る炭化ケイ素基板上にデバイスを形成する方法。 - 炭化ケイ素基板上に形成されたデバイスであって、
基板上に形成された回路と、
炭化ケイ素基板より小さいエッチング速度を有する、回路上の保護層の残余部と、
基板により支持される超小型電気機械構造より成るデバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36261802P | 2002-03-08 | 2002-03-08 | |
PCT/US2003/006972 WO2003076330A2 (en) | 2002-03-08 | 2003-03-07 | Silicon carbide microelectromechanical devices with electronic circuitry |
Publications (1)
Publication Number | Publication Date |
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JP2005519778A true JP2005519778A (ja) | 2005-07-07 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003574560A Pending JP2005519778A (ja) | 2002-03-08 | 2003-03-07 | 電子回路を有する炭化ケイ素超小型電気機械デバイス |
Country Status (8)
Country | Link |
---|---|
US (2) | US7170141B2 (ja) |
EP (1) | EP1487738B1 (ja) |
JP (1) | JP2005519778A (ja) |
CN (1) | CN1652995A (ja) |
AT (1) | ATE407097T1 (ja) |
AU (1) | AU2003231965A1 (ja) |
DE (1) | DE60323344D1 (ja) |
WO (1) | WO2003076330A2 (ja) |
Cited By (1)
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WO2018110093A1 (ja) * | 2016-12-14 | 2018-06-21 | 株式会社日立製作所 | 半導体装置およびその製造方法並びにセンサ |
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US8154092B2 (en) * | 2004-08-09 | 2012-04-10 | Case Western Reserve University | Silicon carbide MEMS structures and methods of forming the same |
US7616013B2 (en) * | 2004-11-11 | 2009-11-10 | Brigham Young University | Micromechanical positional state sensing apparatus method and system |
ES2299298B1 (es) * | 2005-07-21 | 2009-04-01 | Universitat Autonoma De Barcelona | Procedimiento de integracion monolitica de materiales de alta calidad mecanica con circuitos integrados para aplicaciones mems/nems. |
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US7780865B2 (en) * | 2006-03-31 | 2010-08-24 | Applied Materials, Inc. | Method to improve the step coverage and pattern loading for dielectric films |
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US7705411B2 (en) * | 2008-04-09 | 2010-04-27 | National Semiconductor Corporation | MEMS-topped integrated circuit with a stress relief layer |
US8044755B2 (en) * | 2008-04-09 | 2011-10-25 | National Semiconductor Corporation | MEMS power inductor |
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WO2012075272A2 (en) | 2010-12-01 | 2012-06-07 | Cornell University | Structures and methods for electrically and mechanically linked monolithically integrated transistor and mems/nems devices |
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2003
- 2003-03-07 AT AT03744229T patent/ATE407097T1/de not_active IP Right Cessation
- 2003-03-07 CN CN03810349.4A patent/CN1652995A/zh active Pending
- 2003-03-07 US US10/384,492 patent/US7170141B2/en not_active Expired - Fee Related
- 2003-03-07 JP JP2003574560A patent/JP2005519778A/ja active Pending
- 2003-03-07 AU AU2003231965A patent/AU2003231965A1/en not_active Abandoned
- 2003-03-07 EP EP03744229A patent/EP1487738B1/en not_active Expired - Lifetime
- 2003-03-07 DE DE60323344T patent/DE60323344D1/de not_active Expired - Lifetime
- 2003-03-07 WO PCT/US2003/006972 patent/WO2003076330A2/en active Application Filing
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- 2007-01-29 US US11/699,713 patent/US7615788B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018110093A1 (ja) * | 2016-12-14 | 2018-06-21 | 株式会社日立製作所 | 半導体装置およびその製造方法並びにセンサ |
JPWO2018110093A1 (ja) * | 2016-12-14 | 2019-10-24 | 株式会社日立製作所 | 半導体装置およびその製造方法並びにセンサ |
US11380764B2 (en) | 2016-12-14 | 2022-07-05 | Hitachi, Ltd. | Semiconductor device, method of manufacturing same, and sensor |
Also Published As
Publication number | Publication date |
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AU2003231965A8 (en) | 2003-09-22 |
WO2003076330A3 (en) | 2004-08-19 |
US20080093605A1 (en) | 2008-04-24 |
US20040077164A1 (en) | 2004-04-22 |
EP1487738B1 (en) | 2008-09-03 |
ATE407097T1 (de) | 2008-09-15 |
EP1487738A2 (en) | 2004-12-22 |
CN1652995A (zh) | 2005-08-10 |
US7170141B2 (en) | 2007-01-30 |
WO2003076330A2 (en) | 2003-09-18 |
AU2003231965A1 (en) | 2003-09-22 |
US7615788B2 (en) | 2009-11-10 |
DE60323344D1 (de) | 2008-10-16 |
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