CN100364046C - 处理装置和处理方法 - Google Patents

处理装置和处理方法 Download PDF

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Publication number
CN100364046C
CN100364046C CNB038206625A CN03820662A CN100364046C CN 100364046 C CN100364046 C CN 100364046C CN B038206625 A CNB038206625 A CN B038206625A CN 03820662 A CN03820662 A CN 03820662A CN 100364046 C CN100364046 C CN 100364046C
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China
Prior art keywords
processing
gas
processing container
pressure
raw material
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Expired - Fee Related
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CNB038206625A
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English (en)
Chinese (zh)
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CN1703769A (zh
Inventor
河南博
石坂忠大
小岛康彦
大岛康弘
重冈隆
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H10P14/432—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CNB038206625A 2002-08-30 2003-08-15 处理装置和处理方法 Expired - Fee Related CN100364046C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法
JP253674/2002 2002-08-30

Publications (2)

Publication Number Publication Date
CN1703769A CN1703769A (zh) 2005-11-30
CN100364046C true CN100364046C (zh) 2008-01-23

Family

ID=31972803

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038206625A Expired - Fee Related CN100364046C (zh) 2002-08-30 2003-08-15 处理装置和处理方法

Country Status (7)

Country Link
US (2) US20060154383A1 (enExample)
JP (1) JP2004091850A (enExample)
KR (1) KR20040020820A (enExample)
CN (1) CN100364046C (enExample)
AU (1) AU2003254942A1 (enExample)
TW (1) TW200406832A (enExample)
WO (1) WO2004021415A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN104681466A (zh) * 2013-11-29 2015-06-03 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法

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JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
ATE444380T1 (de) * 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
FI121750B (fi) * 2005-11-17 2011-03-31 Beneq Oy ALD-reaktori
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR20110130535A (ko) * 2007-10-31 2011-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 시스템 및 플라즈마 처리 방법
JP6105967B2 (ja) * 2012-03-21 2017-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN104233229A (zh) * 2013-06-24 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置及等离子体加工设备
US9885567B2 (en) * 2013-08-27 2018-02-06 Applied Materials, Inc. Substrate placement detection in semiconductor equipment using thermal response characteristics
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6678489B2 (ja) * 2016-03-28 2020-04-08 東京エレクトロン株式会社 基板処理装置
WO2019188128A1 (ja) * 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7330060B2 (ja) * 2019-10-18 2023-08-21 東京エレクトロン株式会社 成膜装置、制御装置及び圧力計の調整方法
US20220025517A1 (en) * 2020-07-27 2022-01-27 Enchip Enterprise Llc Semiconductor Processing System, and Control Assembly and Method Thereof
JP2022121015A (ja) * 2021-02-08 2022-08-19 東京エレクトロン株式会社 基板処理方法、基板処理装置
US12205803B2 (en) * 2021-02-25 2025-01-21 Kurt J. Lesker Company Pressure-induced temperature modification during atomic scale processing
JP7710876B2 (ja) * 2021-04-19 2025-07-22 株式会社荏原製作所 研磨方法、および研磨装置

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JPH06244110A (ja) * 1992-07-10 1994-09-02 Nec Corp 気相成長装置
JPH08130187A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体気相成長装置および半導体気相成長方法
JP2001189275A (ja) * 1999-12-27 2001-07-10 Sony Corp 半導体膜形成方法及び薄膜半導体装置の製造方法

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US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
US5776615A (en) * 1992-11-09 1998-07-07 Northwestern University Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
US6122429A (en) * 1995-03-02 2000-09-19 Northwestern University Rare earth doped barium titanate thin film optical working medium for optical devices
US5702532A (en) * 1995-05-31 1997-12-30 Hughes Aircraft Company MOCVD reactor system for indium antimonide epitaxial material
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6217659B1 (en) * 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
JP2002285333A (ja) * 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
WO2004083485A2 (en) * 2003-03-14 2004-09-30 Genus, Inc. Methods and apparatus for atomic layer deposition
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH06244110A (ja) * 1992-07-10 1994-09-02 Nec Corp 気相成長装置
JPH08130187A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体気相成長装置および半導体気相成長方法
JP2001189275A (ja) * 1999-12-27 2001-07-10 Sony Corp 半導体膜形成方法及び薄膜半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104681466A (zh) * 2013-11-29 2015-06-03 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法
CN104681466B (zh) * 2013-11-29 2017-11-28 株式会社日立国际电气 衬底处理装置及半导体器件的制造方法

Also Published As

Publication number Publication date
TWI299185B (enExample) 2008-07-21
KR20040020820A (ko) 2004-03-09
WO2004021415A1 (ja) 2004-03-11
CN1703769A (zh) 2005-11-30
TW200406832A (en) 2004-05-01
JP2004091850A (ja) 2004-03-25
AU2003254942A1 (en) 2004-03-19
US20090214758A1 (en) 2009-08-27
US20060154383A1 (en) 2006-07-13

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Termination date: 20110815