KR20040020820A - 처리 장치 및 처리 방법 - Google Patents

처리 장치 및 처리 방법 Download PDF

Info

Publication number
KR20040020820A
KR20040020820A KR1020030060523A KR20030060523A KR20040020820A KR 20040020820 A KR20040020820 A KR 20040020820A KR 1020030060523 A KR1020030060523 A KR 1020030060523A KR 20030060523 A KR20030060523 A KR 20030060523A KR 20040020820 A KR20040020820 A KR 20040020820A
Authority
KR
South Korea
Prior art keywords
processing
gas
processing container
pressure
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020030060523A
Other languages
English (en)
Korean (ko)
Inventor
간난히로시
이시자카다다히로
고지마야스히코
오시마야스히로
시게오카다카시
Original Assignee
동경 엘렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동경 엘렉트론 주식회사 filed Critical 동경 엘렉트론 주식회사
Publication of KR20040020820A publication Critical patent/KR20040020820A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H10P14/432—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020030060523A 2002-08-30 2003-08-30 처리 장치 및 처리 방법 Ceased KR20040020820A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法
JPJP-P-2002-00253674 2002-08-30

Publications (1)

Publication Number Publication Date
KR20040020820A true KR20040020820A (ko) 2004-03-09

Family

ID=31972803

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030060523A Ceased KR20040020820A (ko) 2002-08-30 2003-08-30 처리 장치 및 처리 방법

Country Status (7)

Country Link
US (2) US20060154383A1 (enExample)
JP (1) JP2004091850A (enExample)
KR (1) KR20040020820A (enExample)
CN (1) CN100364046C (enExample)
AU (1) AU2003254942A1 (enExample)
TW (1) TW200406832A (enExample)
WO (1) WO2004021415A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418855B2 (en) 2014-03-31 2016-08-16 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
KR20210046552A (ko) * 2019-10-18 2021-04-28 도쿄엘렉트론가부시키가이샤 성막 장치, 제어 장치 및 압력계의 조정 방법
KR20230134596A (ko) * 2021-02-08 2023-09-21 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
ATE444380T1 (de) * 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
FI121750B (fi) * 2005-11-17 2011-03-31 Beneq Oy ALD-reaktori
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR20110130535A (ko) * 2007-10-31 2011-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 시스템 및 플라즈마 처리 방법
JP6105967B2 (ja) * 2012-03-21 2017-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN104233229A (zh) * 2013-06-24 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置及等离子体加工设备
US9885567B2 (en) * 2013-08-27 2018-02-06 Applied Materials, Inc. Substrate placement detection in semiconductor equipment using thermal response characteristics
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6678489B2 (ja) * 2016-03-28 2020-04-08 東京エレクトロン株式会社 基板処理装置
WO2019188128A1 (ja) * 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US20220025517A1 (en) * 2020-07-27 2022-01-27 Enchip Enterprise Llc Semiconductor Processing System, and Control Assembly and Method Thereof
US12205803B2 (en) * 2021-02-25 2025-01-21 Kurt J. Lesker Company Pressure-induced temperature modification during atomic scale processing
JP7710876B2 (ja) * 2021-04-19 2025-07-22 株式会社荏原製作所 研磨方法、および研磨装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
JPH0748478B2 (ja) * 1992-07-10 1995-05-24 日本電気株式会社 気相成長装置
US5776615A (en) * 1992-11-09 1998-07-07 Northwestern University Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JPH08130187A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体気相成長装置および半導体気相成長方法
US6122429A (en) * 1995-03-02 2000-09-19 Northwestern University Rare earth doped barium titanate thin film optical working medium for optical devices
US5702532A (en) * 1995-05-31 1997-12-30 Hughes Aircraft Company MOCVD reactor system for indium antimonide epitaxial material
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6217659B1 (en) * 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
JP4200618B2 (ja) * 1999-12-27 2008-12-24 ソニー株式会社 半導体膜形成方法及び薄膜半導体装置の製造方法
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
JP2002285333A (ja) * 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
WO2004083485A2 (en) * 2003-03-14 2004-09-30 Genus, Inc. Methods and apparatus for atomic layer deposition
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418855B2 (en) 2014-03-31 2016-08-16 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
KR20210046552A (ko) * 2019-10-18 2021-04-28 도쿄엘렉트론가부시키가이샤 성막 장치, 제어 장치 및 압력계의 조정 방법
KR20230134596A (ko) * 2021-02-08 2023-09-21 도쿄엘렉트론가부시키가이샤 기판 처리 방법, 기판 처리 장치

Also Published As

Publication number Publication date
TWI299185B (enExample) 2008-07-21
WO2004021415A1 (ja) 2004-03-11
CN1703769A (zh) 2005-11-30
TW200406832A (en) 2004-05-01
JP2004091850A (ja) 2004-03-25
AU2003254942A1 (en) 2004-03-19
US20090214758A1 (en) 2009-08-27
US20060154383A1 (en) 2006-07-13
CN100364046C (zh) 2008-01-23

Similar Documents

Publication Publication Date Title
KR20040020820A (ko) 처리 장치 및 처리 방법
KR101521466B1 (ko) 가스 공급 장치, 열처리 장치, 가스 공급 방법 및 열처리 방법
KR101601662B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
KR101160722B1 (ko) 반도체 처리용 성막 장치, 그 사용 방법 및 컴퓨터로판독가능한 매체
CN100494487C (zh) 成膜装置及成膜方法
JP6413293B2 (ja) 成膜方法及び記憶媒体
TWI435385B (zh) 薄膜形成裝置及使用其之方法
CN104517819B (zh) 衬底处理装置及半导体器件的制造方法
US20050211167A1 (en) Processing device and processing method
US9508546B2 (en) Method of manufacturing semiconductor device
KR20150110246A (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 기록 매체
US20100130009A1 (en) Substrate processing apparatus and method of manufacturing semiconductor device
US8193101B2 (en) Substrate processing apparatus and semiconductor device manufacturing method for forming film
WO2004049421A1 (ja) 基板処理容器のクリーニング方法
CN100367459C (zh) 衬底处理装置及半导体装置的制造方法
KR102857746B1 (ko) 독립적으로 조정 가능한 페데스탈들을 사용한 멀티-스테이션 반도체 프로세싱
US20100024728A1 (en) Substrate processing apparatus
KR20210128914A (ko) 원료 공급 장치 및 성막 장치
CN105895559B (zh) 基板处理装置和基板处理方法
WO2020213506A1 (ja) 基板処理装置、基板処理システム及び基板処理方法
US7972961B2 (en) Purge step-controlled sequence of processing semiconductor wafers
JP4361747B2 (ja) 薄膜の形成方法
JPH10223620A (ja) 半導体製造装置
JP2015185579A (ja) 基板処理装置、基板保持体、基板ホルダ及び半導体装置の製造方法
JP2004263265A (ja) 処理装置

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

J201 Request for trial against refusal decision
PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

E801 Decision on dismissal of amendment
PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

B601 Maintenance of original decision after re-examination before a trial
PB0601 Maintenance of original decision after re-examination before a trial

St.27 status event code: N-3-6-B10-B17-rex-PB0601

J301 Trial decision

Free format text: TRIAL DECISION FOR APPEAL AGAINST DECISION TO DECLINE REFUSAL REQUESTED 20060206

Effective date: 20061215

PJ1301 Trial decision

St.27 status event code: A-3-3-V10-V15-crt-PJ1301

Decision date: 20061215

Appeal event data comment text: Appeal Kind Category : Appeal against decision to decline refusal, Appeal Ground Text : 2003 0060523

Appeal request date: 20060206

Appellate body name: Patent Examination Board

Decision authority category: Office appeal board

Decision identifier: 2006101001053

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000