TW200406832A - Treating apparatus and method of treating - Google Patents

Treating apparatus and method of treating Download PDF

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Publication number
TW200406832A
TW200406832A TW092123196A TW92123196A TW200406832A TW 200406832 A TW200406832 A TW 200406832A TW 092123196 A TW092123196 A TW 092123196A TW 92123196 A TW92123196 A TW 92123196A TW 200406832 A TW200406832 A TW 200406832A
Authority
TW
Taiwan
Prior art keywords
processing
gas
raw material
pressure
aforementioned
Prior art date
Application number
TW092123196A
Other languages
English (en)
Chinese (zh)
Other versions
TWI299185B (enExample
Inventor
Hiroshi Kannan
Tadahiro Ishizaka
Yasuhiko Kojima
Yasuhiro Oshima
Takashi Shigeoka
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200406832A publication Critical patent/TW200406832A/zh
Application granted granted Critical
Publication of TWI299185B publication Critical patent/TWI299185B/zh

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Classifications

    • H10P14/432—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW092123196A 2002-08-30 2003-08-22 Treating apparatus and method of treating TW200406832A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法

Publications (2)

Publication Number Publication Date
TW200406832A true TW200406832A (en) 2004-05-01
TWI299185B TWI299185B (enExample) 2008-07-21

Family

ID=31972803

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092123196A TW200406832A (en) 2002-08-30 2003-08-22 Treating apparatus and method of treating

Country Status (7)

Country Link
US (2) US20060154383A1 (enExample)
JP (1) JP2004091850A (enExample)
KR (1) KR20040020820A (enExample)
CN (1) CN100364046C (enExample)
AU (1) AU2003254942A1 (enExample)
TW (1) TW200406832A (enExample)
WO (1) WO2004021415A1 (enExample)

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JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
ATE444380T1 (de) * 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
FI121750B (fi) * 2005-11-17 2011-03-31 Beneq Oy ALD-reaktori
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR20110130535A (ko) * 2007-10-31 2011-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 시스템 및 플라즈마 처리 방법
JP6105967B2 (ja) * 2012-03-21 2017-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN104233229A (zh) * 2013-06-24 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置及等离子体加工设备
US9885567B2 (en) * 2013-08-27 2018-02-06 Applied Materials, Inc. Substrate placement detection in semiconductor equipment using thermal response characteristics
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6678489B2 (ja) * 2016-03-28 2020-04-08 東京エレクトロン株式会社 基板処理装置
WO2019188128A1 (ja) * 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7330060B2 (ja) * 2019-10-18 2023-08-21 東京エレクトロン株式会社 成膜装置、制御装置及び圧力計の調整方法
US20220025517A1 (en) * 2020-07-27 2022-01-27 Enchip Enterprise Llc Semiconductor Processing System, and Control Assembly and Method Thereof
JP2022121015A (ja) * 2021-02-08 2022-08-19 東京エレクトロン株式会社 基板処理方法、基板処理装置
US12205803B2 (en) * 2021-02-25 2025-01-21 Kurt J. Lesker Company Pressure-induced temperature modification during atomic scale processing
JP7710876B2 (ja) * 2021-04-19 2025-07-22 株式会社荏原製作所 研磨方法、および研磨装置

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US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
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US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
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Also Published As

Publication number Publication date
TWI299185B (enExample) 2008-07-21
KR20040020820A (ko) 2004-03-09
WO2004021415A1 (ja) 2004-03-11
CN1703769A (zh) 2005-11-30
JP2004091850A (ja) 2004-03-25
AU2003254942A1 (en) 2004-03-19
US20090214758A1 (en) 2009-08-27
US20060154383A1 (en) 2006-07-13
CN100364046C (zh) 2008-01-23

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