AU2003254942A1 - Treating apparatus and method of treating - Google Patents

Treating apparatus and method of treating

Info

Publication number
AU2003254942A1
AU2003254942A1 AU2003254942A AU2003254942A AU2003254942A1 AU 2003254942 A1 AU2003254942 A1 AU 2003254942A1 AU 2003254942 A AU2003254942 A AU 2003254942A AU 2003254942 A AU2003254942 A AU 2003254942A AU 2003254942 A1 AU2003254942 A1 AU 2003254942A1
Authority
AU
Australia
Prior art keywords
treating
treating apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003254942A
Other languages
English (en)
Inventor
Tadahiro Ishizaka
Hiroshi Kannan
Yasuhiko Kojima
Yasuhiro Oshima
Takashi Shigeoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003254942A1 publication Critical patent/AU2003254942A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/432—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2003254942A 2002-08-30 2003-08-15 Treating apparatus and method of treating Abandoned AU2003254942A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002253674A JP2004091850A (ja) 2002-08-30 2002-08-30 処理装置及び処理方法
JP2002-253674 2002-08-30
PCT/JP2003/010377 WO2004021415A1 (ja) 2002-08-30 2003-08-15 処理装置及び処理方法

Publications (1)

Publication Number Publication Date
AU2003254942A1 true AU2003254942A1 (en) 2004-03-19

Family

ID=31972803

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003254942A Abandoned AU2003254942A1 (en) 2002-08-30 2003-08-15 Treating apparatus and method of treating

Country Status (7)

Country Link
US (2) US20060154383A1 (enExample)
JP (1) JP2004091850A (enExample)
KR (1) KR20040020820A (enExample)
CN (1) CN100364046C (enExample)
AU (1) AU2003254942A1 (enExample)
TW (1) TW200406832A (enExample)
WO (1) WO2004021415A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
ATE444380T1 (de) * 2004-06-28 2009-10-15 Cambridge Nanotech Inc Atomlagenabscheidungssystem und -verfahren
US7217578B1 (en) * 2004-08-02 2007-05-15 Advanced Micro Devices, Inc. Advanced process control of thermal oxidation processes, and systems for accomplishing same
JP2007036197A (ja) * 2005-06-23 2007-02-08 Tokyo Electron Ltd 半導体製造装置の構成部材及び半導体製造装置
JP2007048926A (ja) 2005-08-10 2007-02-22 Tokyo Electron Ltd Ｗ系膜の成膜方法、ゲート電極の形成方法、半導体装置の製造方法およびコンピュータ読取可能な記憶媒体
FI121750B (fi) * 2005-11-17 2011-03-31 Beneq Oy ALD-reaktori
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
KR20110130535A (ko) * 2007-10-31 2011-12-05 도쿄엘렉트론가부시키가이샤 플라즈마 처리 시스템 및 플라즈마 처리 방법
JP6105967B2 (ja) * 2012-03-21 2017-03-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
CN104233229A (zh) * 2013-06-24 2014-12-24 北京北方微电子基地设备工艺研究中心有限责任公司 进气装置及等离子体加工设备
US9885567B2 (en) * 2013-08-27 2018-02-06 Applied Materials, Inc. Substrate placement detection in semiconductor equipment using thermal response characteristics
JP6135475B2 (ja) * 2013-11-20 2017-05-31 東京エレクトロン株式会社 ガス供給装置、成膜装置、ガス供給方法及び記憶媒体
JP5950892B2 (ja) * 2013-11-29 2016-07-13 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6147693B2 (ja) 2014-03-31 2017-06-14 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、およびプログラム
JP5947435B1 (ja) 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6678489B2 (ja) * 2016-03-28 2020-04-08 東京エレクトロン株式会社 基板処理装置
WO2019188128A1 (ja) * 2018-03-30 2019-10-03 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7330060B2 (ja) * 2019-10-18 2023-08-21 東京エレクトロン株式会社 成膜装置、制御装置及び圧力計の調整方法
US20220025517A1 (en) * 2020-07-27 2022-01-27 Enchip Enterprise Llc Semiconductor Processing System, and Control Assembly and Method Thereof
JP2022121015A (ja) * 2021-02-08 2022-08-19 東京エレクトロン株式会社 基板処理方法、基板処理装置
US12205803B2 (en) * 2021-02-25 2025-01-21 Kurt J. Lesker Company Pressure-induced temperature modification during atomic scale processing
JP7710876B2 (ja) * 2021-04-19 2025-07-22 株式会社荏原製作所 研磨方法、および研磨装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4747367A (en) * 1986-06-12 1988-05-31 Crystal Specialties, Inc. Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
US5381756A (en) * 1992-03-04 1995-01-17 Fujitsu Limited Magnesium doping in III-V compound semiconductor
JPH0748478B2 (ja) * 1992-07-10 1995-05-24 日本電気株式会社 気相成長装置
US5776615A (en) * 1992-11-09 1998-07-07 Northwestern University Superhard composite materials including compounds of carbon and nitrogen deposited on metal and metal nitride, carbide and carbonitride
JPH06295862A (ja) * 1992-11-20 1994-10-21 Mitsubishi Electric Corp 化合物半導体製造装置及び有機金属材料容器
US5616208A (en) * 1993-09-17 1997-04-01 Tokyo Electron Limited Vacuum processing apparatus, vacuum processing method, and method for cleaning the vacuum processing apparatus
JPH08130187A (ja) * 1994-10-31 1996-05-21 Toshiba Corp 半導体気相成長装置および半導体気相成長方法
US6122429A (en) * 1995-03-02 2000-09-19 Northwestern University Rare earth doped barium titanate thin film optical working medium for optical devices
US5702532A (en) * 1995-05-31 1997-12-30 Hughes Aircraft Company MOCVD reactor system for indium antimonide epitaxial material
US6126753A (en) * 1998-05-13 2000-10-03 Tokyo Electron Limited Single-substrate-processing CVD apparatus and method
US6217659B1 (en) * 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
US6454860B2 (en) * 1998-10-27 2002-09-24 Applied Materials, Inc. Deposition reactor having vaporizing, mixing and cleaning capabilities
US6503330B1 (en) * 1999-12-22 2003-01-07 Genus, Inc. Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition
JP4200618B2 (ja) * 1999-12-27 2008-12-24 ソニー株式会社 半導体膜形成方法及び薄膜半導体装置の製造方法
AU2001245388A1 (en) * 2000-03-07 2001-09-17 Asm America, Inc. Graded thin films
US20020073924A1 (en) * 2000-12-15 2002-06-20 Chiang Tony P. Gas introduction system for a reactor
JP2002285333A (ja) * 2001-03-26 2002-10-03 Hitachi Ltd 半導体装置の製造方法
US6701066B2 (en) * 2001-10-11 2004-03-02 Micron Technology, Inc. Delivery of solid chemical precursors
US7192486B2 (en) * 2002-08-15 2007-03-20 Applied Materials, Inc. Clog-resistant gas delivery system
JP2004091850A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 処理装置及び処理方法
WO2004083485A2 (en) * 2003-03-14 2004-09-30 Genus, Inc. Methods and apparatus for atomic layer deposition
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers

Also Published As

Publication number Publication date
TWI299185B (enExample) 2008-07-21
KR20040020820A (ko) 2004-03-09
WO2004021415A1 (ja) 2004-03-11
CN1703769A (zh) 2005-11-30
TW200406832A (en) 2004-05-01
JP2004091850A (ja) 2004-03-25
US20090214758A1 (en) 2009-08-27
US20060154383A1 (en) 2006-07-13
CN100364046C (zh) 2008-01-23

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase