CN107723682A - 成膜装置和其使用的气体排出部件 - Google Patents

成膜装置和其使用的气体排出部件 Download PDF

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Publication number
CN107723682A
CN107723682A CN201710686260.2A CN201710686260A CN107723682A CN 107723682 A CN107723682 A CN 107723682A CN 201710686260 A CN201710686260 A CN 201710686260A CN 107723682 A CN107723682 A CN 107723682A
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gas
gas discharge
processed substrate
plasma
discharge hole
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CN107723682B (zh
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冈部真也
望月隆
山崎英亮
平松永泰
传宝树
传宝一树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Abstract

本发明提供一种在通过等离子体CVD成膜时，调整基板外周部的膜厚能够获得所期望的膜厚面内均匀性的技术。成膜装置(100)包括：用于收纳晶片(W)的处理容器(1)；在处理容器(1)内载置晶片的基座(2)；与载置在基座(2)的晶片W相对配置，将处理气体向基座(2)上的晶片(W)排出的喷淋头(10)；在喷淋头(10)和基座(2)之间生成等离子体并激发处理气体的高频电源(41)，利用由等离子体激发的处理气体在晶片(W)上形成规定的膜。喷淋头(10)具有与基座(2)相对的气体排出面(17)，在气体排出面(17)形成有多个气体排出孔(15)，气体排出面(17)中的形成有多个气体排出孔(15)的气体排出孔形成区域(18)比气体排出面(17)的与晶片(W)对应的区域小。

Description

成膜装置和其使用的气体排出部件
技术领域
本发明涉及成膜装置及其使用的气体排出部件.
背景技术
作为在半导体晶片等的基板上形成薄膜的方法，已知化学蒸镀法(ChemicalVapor Deposition；CVD)。作为通过CVD成膜的成膜装置，广泛周知在载置基板的载置台的上方，与基板相对地设置作为排出处理气体的气体排出部件的喷淋头(shower head)，从设置在喷淋头的气体排出面的多个气体排出孔排出处理气体。
在这样的成膜装置中，从对基板均匀地供给处理气体的观点出发，通常在喷淋头的气体排出面形成有多个气体排出孔的气体排出孔形成区域的大小与跟载置台上的基板对应的区域相等或达到其以上(例如参照专利文献1的0024段和图1、2)。
而且，在上述专利文献1中记载有，在使喷淋头中的气体排出面的气体排出孔形成区域的大小与跟载置台上的基板对应的区域相等或其以上的基础上，为了提高膜厚的面内均匀性，对气体排出孔的直径和气体排出孔的配置下功夫。
现有技术文献
专利文献
专利文献1：日本特开2013-48227号公报
发明内容
发明想要解决的技术问题
但是，作为CVD的一种，已知利用等离子体使处理气体激发而帮助处理气体的解离的等离子体CVD，但是，在等离子体CVD的情况下，基板外周部的膜厚变薄，为了提高膜厚的面内均匀性，要求调整基板外周部的膜厚。
但是，在等离子体CVD中，即使对气体排出孔的直径和气体排出孔的配置下功夫，基板外周部的膜厚的调整也变得困难，获得所期望的膜厚面内均匀性至今都是困难的。
所以，本发明的课题在于提供在利用等离子体CVD成膜时，调整基板外周部的膜厚，能够获得所期望的膜厚面内均匀性的技术。
用于解决技术问题的技术方案
为了解决上述课题，本发明提供一种成膜装置，包括：用于收纳被处理基板的处理容器；在上述处理容器内载置被处理基板的载置台；与载置在上述载置台的被处理基板相对配置，将处理气体向上述载置台上的被处理基板排出的气体排出部件；和在上述气体排出部件和上述载置台之间生成等离子体而激发上述处理气体的等离子体生成装置，上述成膜装置利用被等离子体激发的处理气体在被处理基板上形成规定的膜，上述成膜装置的特征在于，上述气体排出部件具有与上述载置台相对的气体排出面，在上述气体排出面形成有多个气体排出孔，上述气体排出面中的形成有上述多个气体排出孔的气体排出孔形成区域比上述气体排出面的与被处理基板对应的区域小。
另外，本发明提供一种气体排出部件，其在处理容器内与载置在载置台上的被处理基板相对配置，将处理气体向上述载置台上的被处理基板排出，在气体排出部件与上述载置台之间生成有等离子体的状态下，利用上述处理气体在被处理基板上形成规定的膜，所述气体排出部件的特征在于：具有与上述载置台相对的气体排出面，在上述气体排出面形成有多个气体排出孔，上述气体排出面中的形成有上述多个气体排出孔的气体排出孔形成区域比上述气体排出面的与被处理基板对应的区域小。
上述气体排出面中的上述气体排出孔形成区域和与上述被处理基板对应的区域呈同心状，上述气体排出孔形成区域的直径比与上述被处理基板对应的区域的直径小。
在这种情况下，优选上述气体排出孔形成区域的直径相对于与上述被处理基板对应的区域的直径的比例是66.6～93.4％，更优选73.3～86.7％。
从上述气体排出部件排出的处理气体可以是作为原料气体的TiCl4气体、作为还原气体的H2气体、和作为等离子体生成气体的Ar气体，在被处理基板上形成含Ti的金属膜。在这种情况下，上述TiCl4气体被上述等离子体激发，优选作为活性种，TiClx(x＝1～4)主要生成TiCl3或者TiCl2。并且，主要生成TiCl3的情况更能够期待效果。
优选还包括对上述载置台上的被处理基板进行加热的加热机构，在成膜时通过上述加热机构将被处理基板加热到300～700℃的温度，更优选350～500℃。
在形成含Ti的金属膜时，优选使从上述气体排出部件排出的气体流量为：TiCl4气体：1～200mL/min(sccm)、H2气体：1～10000mL/min(sccm)、Ar气体：100～10000mL/min(sccm)，更优选：TiCl4气体：3～50mL/min(sccm)、H2气体：5～5000mL/min(sccm)、Ar气体：100～5000mL/min(sccm)。
优选还包括设置在与上述载置台连接的传送路径中的阻抗调整电路，通过该阻抗调整电路，使从等离子体看的上述传送路径的阻抗降低而使从等离子体流到基板的电流增加，使Ar离子高能量化。
上述等离子体生成装置以上述载置台为下部电极，以气体排出部件为上部电极，在上述上部电极和上述下部电极之间形成高频电场而生成等离子体。
发明效果
根据本发明，气体排出部件构成为气体排出面中的形成有多个气体排出孔的气体排出孔形成区域比气体排出面的与被处理基板对应的区域小，因此能够提高被处理基板的外周的活性种的浓度，调整基板外周部的膜厚，能够获得所期望的膜厚面内均匀性。
附图说明
图1是表示本发明的一实施方式所涉及的成膜装置的一个例子的概略截面图。
图2是表示图1的成膜装置的喷淋头的底视图。
图3是表示形成Ti膜时使用的晶片的构造例的截面图。
图4是表示Ti膜成膜后和硅化后的晶片的状态的截面图。
图5是用于说明阻抗调整电路的功能的成膜装置的示意图。
图6是表示现有的喷淋头的底视图。
图7是表示使用现有的喷淋头形成Ti膜的情况下的、成膜时间与晶片W的中心和外周的膜厚和平均膜厚的关系的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。
图8是表示使用现有的喷淋头形成Ti膜的情况下的、各成膜时间的径向的膜厚分布的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。
图9是表示在使用现有喷淋头的情况和使用宽喷淋头的情况下、求出径向的成膜速度分布和TiCl3密度分布的模拟结果的图，(a)是成膜速度分布的结果，(b)是TiCl3密度分布的结果。
图10是表示在使用现有喷淋头的情况和使用宽喷淋头的情况下的、喷淋头和基座之间的、等离子体中的流速分布的模拟结果的图。
图11是表示使用现有喷淋头、在喷淋头和基座之间的气体流量不同的条件下生成等离子体的情况的、喷淋头和基座之间的等离子体中的流速分布的模拟结果的图。
图12是表示使用现有喷淋头、在喷淋头和基座之间的气体流量不同的条件下生成等离子体的情况下、求出径向的成膜速度分布和TiCl3密度分布的模拟结果的图，(a)是成膜速度分布的结果，(b)是TiCl3密度分布的结果。
图13是关于现有喷淋头和实施方式的窄喷淋头，通过模拟比较喷淋头和基座之间的等离子体中的TiCl3浓度和等离子体中的流速分布的结果的图。
图14是表示使用实施方式的窄喷淋头形成Ti膜的情况的、成膜时间和、晶片W的中心和外周的膜厚和平均膜厚的关系的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。
图15是表示使用实施方式的窄喷淋头形成Ti膜的情况的、各成膜时间的径向的膜厚分布的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。
图16是用于说明本发明的实施方式中的晶片外周部中的膜厚调整的概念的示意图，(a)是表示使用现有的喷淋头的情况的TiCl4和TiCl3的分布的图，(b)是表示使用实施方式的喷淋头的情况的TiCl4和TiCl3的分布的图。
附图标记说明
1：腔室
2：基座
5：加热器
10：喷淋头
12：喷淋板
15：气体排出孔
17：气体排出面
18：气体排出孔形成区域
20：气体供给机构
21：TiCl4气体供给源
22：Ar气体供给源
23：H2气体供给源
41：高频电源
43：阻抗调整电路
53：排气装置
60：控制部
100：成膜装置
110：Si基板
111：层间绝缘膜
112：触点孔
113：Ti膜
114：TiSix膜
W：半导体晶片。
具体实施方式
以下，参照附图对本发明的实施方式进行具体说明。
以下的说明中，以利用等离子体CVD形成Ti膜作为含Ti的金属膜的情况为例进行说明。
图1是表示本发明的一实施方式所涉及的成膜装置的一个例子的概略截面图，图2是表示作为成膜装置的气体排出部件的喷淋头的底视图。
成膜装置100构成为通过在平行平板电极形成高频电场来形成等离子体并形成Ti膜的等离子体CVD装置。
该成膜装置100具有呈大致圆筒状的金属制的腔室1。腔室1的底壁1b的中央部形成有圆形的孔50，在底壁1b设置有以覆盖该孔50的方式向下方突出的排气室51。在排气室51的侧面连接有排气管52，在该排气管52连接有排气装置53。而且，通过使该排气装置53工作，能够将腔室1内减压至规定的真空度。
在腔室1的侧壁，设置有在与腔室1相邻设置的未图示的晶片搬送室之间用于进行晶片W的搬入搬出的搬入出口57和打开和关闭该搬入出口57的闸阀58。
在腔室1的内部，作为用于将作为被处理基板的半导体晶片、例如硅晶片(以下仅仅为晶片)W水平支承的作为载置台(工作台)的基座2在其中央由圆筒状的支承部件3支承的状态下配置。支承部件3支承于排气室51的底部。基座2和支承部件3由AlN、Al2O3等的陶瓷形成。在基座2的外缘部设置有用于引导晶片W的引导环4。可以不设置引导环4，而在基座2的上表面设置晶片W保持用的凹部。另外，在基座2埋入加热器5，该加热器5被从加热器电源(未图示)供电而发热，经由基座2将晶片W加热至规定的温度。在基座2内，在加热器5之上还埋入有后述的电极42。此外，基座2可以未镍等的金属制，在该情况下不需要电极42。另外，基座2是金属制的情况下，为了与腔室1绝缘可以插入绝缘部件。
另外，在基座2，用于支承晶片W并使其升降的3根(仅图示2根)的晶片支承销54以相对于基座2的表面能够升降的方式设置，上述晶片支承销54支承于支承板55。而且，晶片支承销54通过气缸等的驱动机构56经由支承板55进行升降。
在腔室1的顶壁1a，隔着绝缘部件9设置有与基座2相对的还作为平行平板电极的上部电极发挥作用的预混合式(premix-type)的喷淋头10。喷淋头10包括基底部件11和喷淋板12，喷淋板12的外周部隔着粘贴防止用的呈圆环状的中间部件13通过未图示的螺钉固定在基底部件11。喷淋板12呈圆板状，在其外周形成有凸缘。而且，在基底部件11和喷淋板12之间形成有气体扩散空间14。基底部件11在其外周形成有凸缘部11a，该凸缘部11a支承于绝缘部件9。喷淋板12具有与基座2相对的气体排出面17，在喷淋板12形成有从气体排出面17排出气体的多个气体排出孔15。在基底部件11的中央附近形成有一个气体导入孔16。气体导入孔16与后述的气体供给机构20的气体配管连接，从气体供给机构20供给的处理气体经由喷淋头10被导入腔室1内。
另外，在喷淋头10的基底部件11设置有用于加热喷淋头10的加热器47。在该加热器47连接有加热器电源(未图示)，从加热器电源对加热器47进行供电而将喷淋头10加热到所期望的温度。在形成在基底部件11的上部的凹部设置有隔热部件49。
如图2所示，喷淋板12的气体排出面17呈圆形，设置成与载置于基座2上的晶片W成为同心状。气体排出面17的直径D1比晶片W的直径D3大。另外，喷淋板12的气体排出面17中的形成有多个气体排出孔15的气体排出孔形成区域18比气体排出面17的与晶片W对应的区域小，在与晶片W的外周部分对应的位置不存在气体排出孔。具体来讲，气体排出孔形成区域18呈圆形状，与载置在基座2上的晶片W成为同心状，气体排出孔形成区域18的直径D2比晶片W的直径D3小。其中，在此所谓的同心状并不是指严格意义上的同心状，中心位置稍微偏移也包含于同心状。
在晶片W的直径D3为300mm的情况下，优选气体排出孔形成区域18的直径D2为200～280mm，更优选为220～260mm。即，D2与D3比例优选为66.6～93.4％，更优选为73.3～86.7％。
此外，本实施方式中，在气体排出面17，在气体排出孔形成区域18的外侧不形成气体排出孔15，但是，当能够获得所期望的效果的范围内的数量时，可以在气体排出孔形成区域18的外侧形成气体排出孔15。
气体排出孔15的直径和间隔与现有的喷淋头相同，气体排出孔的直径例如是0.50～7.0mm程度，优选0.65～1.8mm。气体排出孔之间隔(孔的中心间的距离)例如是3.0～10.0mm程度，优选4.3～8.6mm。
气体供给机构20包括供给作为Ti原料气体的TiCl4气体的TiCl4气体供给源21、供给作为等离子体生成气体、吹扫(purge)气体使用的Ar气体的Ar气体供给源22、供给作为还原气体的H2气体的H2气体供给源23、供给作为氮化气体的NH3气体的NH3气体供给源24、和供给N2气体的N2气体供给源25。而且，TiCl4气体供给源21与TiCl4气体供给线路31连接，Ar气体供给源22与Ar气体供给线路32连接，H2气体供给源23与H2气体供给线路33连接，NH3气体供给源24与NH3气体供给线路34连接，N2气体供给源25与N2气体供给线路35连接。而且，各气体线路上设置有质量流量控制器37，并且夹着质量流量控制器37设置有2个阀36。
TiCl4气体供给线路31与Ar气体供给线路32连接。另外，H2气体供给线路33与NH3气体供给线路34和N2气体供给线路35连接。TiCl4气体供给线路31和H2气体供给线路33与气体混合部38连接，于是，混合的混合气体经由气体配管39与上述气体导入孔16连接。而且，混合气体经由气体导入孔16到达气体扩散空间14，通过喷淋板12的气体排出孔15向腔室1内的晶片W排出。
喷淋头10经由匹配器40与高频电源41连接，从该高频电源41对喷淋头10供给高频电力。喷淋头10作为平行平板电极的上部电极发挥作用。另一方面，埋入基座2的上述电极42作为平行平板电极的下部电极发挥作用。所以，通过对喷淋头10供给高频电力，在喷淋头10和电极42之间形成高频电场，利用该高频电场，从喷淋头10排出的处理气体被等离子体化。高频电源41的频率优选设定为200kHz～13.56MHz，典型来说能够使用450kHz。
与电极42连接的传送路径42a连接有阻抗调整电路43。阻抗调整电路43用于使从等离子体看的与电极42连接的传送路径42a的阻抗降低并增加从等离子体流到电极42的电流，该阻抗调整电路例如由线圈44和可变电容器45形成。在传送路径42a中流过的电流通过电流计46检测，基于该检测值控制阻抗调整电路43的电抗。
成膜装置100具有控制作为其构成部的阀36、质量流量控制器37、匹配器40、高频电源41、可变电容器45、驱动机构56、加热器电源等的控制部60。控制部60具有CPU(计算机)，具有进行上述各构成部的控制的主控制部、输入装置、输出装置、显示装置和存储装置。存储装置设置有保存有用于控制由成膜装置100执行的处理的程序、即处理方案的存储介质，主控制部进行控制，使得读取存储于存储介质的规定的处理方案，基于该处理方案对成膜装置100实施规定的处理。
接着，说明使用以上的成膜装置100进行的Ti膜的成膜处理。
在本实施方式中，作为晶片W例如如图3所示，使用具有在Si基板110上形成有层间绝缘膜111，在层间绝缘膜111形成有到达Si基板110的杂质扩散区域110a的触点孔112的构造的晶片。
首先，在调整腔室1内的压力后，打开闸阀58，从搬送室(未图示)经由搬入出口57将具有图3的构造的晶片W搬入腔室1内。然后，将腔室1内维持在规定的真空度，并对晶片W进行预备加热。进行规定的时间的加热，在晶片W的温度大致稳定的时刻，使作为等离子体生成气体的Ar气体、作为还原气体的H2气体、作为Ti原料气体的TiCl4气体流过未图示的预流路径进行预流后，在将气体流量和压力保持在相同的状态下切换至成膜用的路径，将这些气体经由喷淋头10导入腔室1内。
然后，在上述的气体的导入开始后，从高频电源41对喷淋头10施加高频电力，生成导入腔室1内的Ar气体、H2气体、TiCl4气体的等离子体，在由加热器5加热至规定温度的晶片W上使等离子体化了的气体反应。由此，如图4的(a)所示，在Si基板(Si部分)110表面沉积Ti膜113。然后，如图4的(b)所示，该Ti膜113和触点孔112的底部的Si基板110反应，形成TiSix膜114。
此时，TiCl4气体被上述等离子体激发，作为活性种生成TiClx(x＝1～4)，主要优选TiCl3或者TiCl2。特别是，优选相对于TiCl4气体的流量极力降低H2气体的流量，使由等离子体生成的活性种以与TiCl2相比附着系数低的TiCl3为主体，且极力增多Ar气体流量来提高Ar离子的蚀刻作用。在此所谓的“TiCl3为主体”是，TiCl4被分解为TiCl2和TiCl3，呈TiCl2<TiCl3的状态。由此，极力减少孔开口的突悬(overhang)，能够获得台阶覆盖性(stepcoverage)高的Ti膜。另外，通过基于Ar离子的碰撞的吸附在Ti膜表面的Cl脱离促进作用，在成膜温度为500℃以下的低温中也能够形成残留氯少的低电阻的Ti膜。
从这样的观点出发成膜时的气体流量优选
TiCl4气体流量：1～200mL/min(sccm)
Ar气体流量：100～10000mL/min(sccm)
H2气体流量：1～10000mL/min(sccm)的范围。
更优选：
TiCl4气体流量：3～50mL/min(sccm)
Ar气体流量：100～5000mL/min(sccm)
H2气体流量：5～5000mL/min(sccm)。
另外，H2气体/Ar气体的流量比优选0.001～50。
此外，气体的流量的单位使用mL/min，但是气体由于温度和气压而导致体积变化较大，因此，在本发明中使用换算为标准状态的值。此外，换算为标准状态的流量通常用sccm(Standard Cubic Centimeterper Minutes)标记，所以兼标记sccm。在此的标准状态是温度0℃(273.15K)、气压1atm(101325Pa)的状态。
关于成膜温度，能够采用300～700℃的范围。但是，从器件的耐热性和杂质扩散的抑制的观点出发，优选500℃以下。如上所述，在本实施方式中，Ar离子的作用大，因此，在500℃以下的低温西安也能够形成残留氯少的低电阻的Ti膜，能够形成器件上优选的成膜温度。另一方面，当温度过低时，难以获得良好的膜质，因此，优选350℃以上。即，优选的成膜温度(晶片温度)为350～500℃。
腔室1内的压力，压力越低等离子体损伤越降低，但是，当压力过低时，Ti膜的面内均匀性(电阻值)显著变差。另外，当压力过高时，Ti膜的电阻值变高，因此不优选。因此，考虑上述方面规定优选的范围。优选的范围为13.3～1333Pa(0.1～10Torr)。
为了提高Ar离子的作用，需要较大的功率，但是，当增大高频功率时，从等离子体向腔室壁部流动的电流变大，等离子体变得不稳定，存在产生异常放电等的顾虑。因此，从不增大高频功率就尽力提高Ar离子的作用的观点出发，在与基座2内的电极42连接的传送路径42a设置阻抗调整电路43，能够调整从等离子体看的传送路径42a的阻抗。
即，在等离子体至晶片W之间具有等离子体鞘和基座2的电容分量，它们成为电阻，但是如图5所示，通过阻抗调整电路43，将上述的电容分量消除，极力降低传送路径42的阻抗，由此，有效地增大从等离子体经由晶片W流到传送路径42a的电流，能够以比较小的功率充分发挥Ar离子的作用。另外，如上述方式增大从等离子体流到晶片W的电流，由此能够使从等离子体流向腔室壁部的电流相对小，能够提高等离子体的稳定性。
此外，阻抗调整电路不限于组合图1的线圈44和可变电容器45来调整可变电容器的构成。
但是，如上述方式，通过采用以TiCl3和Ar离子的作用为主体的处理，能够在500℃以下的低温下获得台阶覆盖性高且低电阻的Ti膜，但是，明确在现有的成膜装置中，产生膜厚的不均匀，晶片W的外周部分的膜厚变薄。
具体来讲，在现有的成膜装置中，如图6所示，在喷淋板12的气体排出面17的大致整个面形成有气体排出孔15，使用气体排出孔形成区域的直径与晶片W的直径相等或其以上的喷淋头，其膜厚分布是图7、图8所示的状态。
图7是表示使用现有的喷淋头形成Ti膜的情况下的、成膜时间与晶片W的中心和外周的膜厚和平均膜厚的关系的图，(a)是在SiO2膜上的结果，(b)是Si基板上的结果。从该图可知，成膜时间越变长，中心和外周的膜厚差越变大。另外，图8是表示使用现有的喷淋头形成Ti膜的情况下的、各成膜时间的径向的膜厚分布的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。从该图可知，在使用现有的喷淋头的情况下，在晶片的外周部分膜厚变薄。
在晶片的外周部分膜厚变薄的原因被认为是，有助于成膜的TiCl3的密度在晶片外周变低。因此，首先，尝试使用与现有的喷淋头相比气体排出孔在更广泛的区域形成的喷淋头(宽喷淋头)，与现有技术相比至更外侧为止供给TiCl4。在此，现有喷淋头的气体排出孔形成区域的直径为与此相对，在宽喷淋头中增大喷淋板的气体排出面的面积，使气体排出孔形成区域的直径为
图9表示在使用现有喷淋头的情况和使用宽喷淋头的情况下，求出径向的成膜速度分布和TiCl3密度分布的结果。图9的(a)是成膜速度分布的结果，(b)是TiCl3模拟密度分布的结果。如该图所示，与预想相反，显示宽喷淋头与现有喷淋头相比，在内侧成膜速度和TiCl3密度更降低。
图10是表示这两个喷淋头和基座之间的等离子体的流速分布的模拟结果的图，(a)是现有喷淋头的结果，(b)是宽喷淋头的结果。在该图中，主要表示外周侧的结果，颜色越浓月表示流速大。从该图可知，与在宽喷淋头中气体排出孔形成区域扩大到外侧的量相应地，喷淋头和基座之间的流速降低。所以，推测在宽喷淋头中，伴随喷淋头和基座之间的流速降低而压力降低，TiCl3的向下游的对流通量(flux)降低，由此，成膜速度的降低开始位置移动到更内侧。
为了验证该情况，使用现有喷淋头，在向喷淋头和基座之间供给的气体流量不同的条件下进行了实验。相对于条件1，在条件2下使TiCl4/H2/Ar各自的气体流量为大约2倍。图11是表示这两个喷淋头和基座之间的等离子体的流速分布的模拟结果的图，(a)是条件1的结果，(b)是条件2的结果。在该图中，主要表示外周侧的结果，表示颜色越浓流速越大。从该图可知，与条件1相比条件2的外周部分中的流速更大。
图12是表示求出两者的径向的成膜速度分布和TiCl3密度分布的模拟结果的图，(a)是条件1的结果，(b)是条件2的结果。如该图所示，显示出，流速小的条件1与条件2相比，在更内侧成膜速度和TiCl3密度降低，喷淋头和基座之间的流速降低，由此，能够确认晶片外周部分的TiCl3密度降低，成膜速度降低。
所以，验证了在使用宽喷淋头时，喷淋头和基座之间的气体的流速变小，这与晶片外周部中的TiCl3的密度降低相关，晶片外周部中的成膜速度的降低开始位置向内侧移动。
所以，在本实施方式中，为了使喷淋头和基座之间的气体的流速上升，喷淋头10构成为喷淋板12的气体排出面17中的、形成有多个气体排出孔15的气体排出孔形成区域18比与晶片W对应的区域小。
关于现有喷淋头和使气体排出孔形成区域比晶片区域窄的本实施方式的喷淋头(窄喷淋头)，通过模拟比较了喷淋头和基座之间的等离子体中的TiCl3浓度和流速。窄喷淋头的气体排出孔形成区域的直径为(晶片直径300mm)。
图13表示其结果。在图13中，(a)是现有喷淋的结果，(b)是窄喷淋头的结果。在该图中示出，在外周侧，颜色越深，TiCl3浓度和流速越高。如该图所示，在使用现有喷淋头的情况下，趋向于喷淋头和基座之间的流速低，在晶片外周部TiCl3浓度变低，与此不同，在本实施方式的窄喷淋头中示出，与现有喷淋头相比，从更内侧起流速上升，关于TiCl3浓度，气体排出孔形成区域的紧挨着的外侧上升，在不存在气体排出孔的外周部分也维持较高的浓度。
接着，使用窄喷淋头求出实际的膜厚分布。
图14是表示使用窄喷淋头形成Ti膜的情况下的、成膜时间与、晶片W的中心和外周的膜厚和平均膜厚的关系的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。与图7的对比可以明确，可知在使用现有喷淋头的情况下，当成膜时间变长时，中心和外周的膜厚差变大，与此不同，通过使用窄喷淋头，即使成膜时间变长，中心和外周的膜厚差也不变大。另外，图15是表示使用窄喷淋头形成Ti膜的情况下的、各成膜时间的径向的膜厚分布的图，(a)是SiO2膜上的结果，(b)是Si基板上的结果。与图8的对比可以明确，可知在使用现有喷淋头的情况下，在晶片的外周部分膜厚急剧变薄，与此不同，通过使用窄喷淋头，晶片外周部分的膜厚与现有喷淋头相比变厚。
从上述可知，能够确认使喷淋头10构成为喷淋板12的气体排出面17中的、形成有多个气体排出孔15的气体排出孔形成区域18比与晶片W对应的区域小，从而能够经调整使晶片外周部的膜厚变厚。
图16示意地说明此时的晶片外周部中的膜厚调整的概念。在使用现有的喷淋头的情况下，如图16的(a)所示，至与晶片W的外侧对应的区域形成气体排出孔15，从上述的气体排出孔15排出TiCl4，在等离子体中成为TiCl3。在这种情况下，如上所述，在晶片W的外周部有助于成膜的TiCl3的浓度变小，膜厚变薄。与此不同，在本实施方式的窄喷淋头中，如图16的(b)所示，仅在与晶片W的中央区域对应的区域形成气体排出孔，在晶片W的外周部从TiCl4有效地转换为TiCl3，在与晶片W的外周部对应的部分TiCl3增加，晶片W的外周部分的膜厚增加。
晶片外周部的膜厚能够通过气体排出孔形成区域18的大小进行调整，根据此时的膜厚分布使气体排出孔形成区域18的大小最优化，能够使径向的膜厚分布为均匀性高。
具体来说，气体排出孔形成区域18呈圆形状，与载置在基座2上的晶片W呈同心状，气体排出孔形成区域18的直径D2比晶片W的直径D3小。从有效地调整晶片外周部的膜厚的观点出发，在晶片W的直径D3为300mm的情况下，气体排出孔形成区域18的直径D2优选为200～280mm，更优选220～260mm。即，D2与D3的比例优选66.6～93.4％，更优选73.3～86.7％。
利用使用这样的喷淋头的成膜装置100进行Ti膜的成膜后，可以根据需要实施Ti膜的氮化处理。在该氮化处理中，在上述Ti膜的成膜结束后，使TiCl4气体停止，在使H2气体和Ar气体流动的状态下，将腔室1内加热至适当的温度并使作为氮化气体的NH3气体流动，并且，从高频电源41对喷淋头10施加高频电力使处理气体等离子体化，利用等离子体化了的处理气体使Ti膜的表面氮化。由此，能够保护Ti膜。
在Ti膜成膜后或者氮化处理后，打开闸阀58，经由搬入出口57向未图示的晶片搬送室搬出晶片W。
此外，本发明不限于上述实施方式，能够在本发明的主旨的范围内进行各种变形。例如，在本例中，示出了同时供给原料气体、还原气体进行成膜的情况，但是，也包含中间夹着利用Ar气体等的非活性气体的吹扫，交替反复进行成膜气体和还原气体的供给(每换一次气体进行一次吹扫)来生成等离子体的状态下利用原子层沉积法(ALD法)进行成膜的情况。
另外，在上述实施方式中，对通过等离子体CVD形成Ti膜的情况进行了说明，但是，不仅在Ti成膜时添加氮源的成膜含Ti的金属膜的情况下适用，而且，也能够适用于在喷淋头和基座之间形成等离子体、生成原料气体的活性种而形成规定的膜的装置。
并且，在本实施方式中，对喷淋头施加高频电力形成高频电场而生成等离子体，但是可以对基座施加高频电力，另外，不限于上述实施方式那样的平行平板型的等离子体生成机构，可以为生成感应耦合等离子体、微波等离子体等的其它的等离子体生成机构。
并且，列举作为被处理基板适用半导体晶片的情况为例进行了说明，但是，不限于此，当然也能够将本发明应用于玻璃基板、陶瓷基板等的其它的被处理基板。

Claims (14)

1.一种成膜装置，其包括：
用于收纳被处理基板的处理容器；
在所述处理容器内载置被处理基板的载置台；
与载置在所述载置台上的被处理基板相对配置的用于将处理气体向所述载置台上的被处理基板排出的气体排出部件；和
在所述气体排出部件和所述载置台之间生成等离子体而激发所述处理气体的等离子体生成装置，
所述成膜装置利用被等离子体激发的处理气体在被处理基板上形成规定的膜，所述成膜装置的特征在于，
所述气体排出部件具有与所述载置台相对的气体排出面，在所述气体排出面形成有多个气体排出孔，
所述气体排出面中的形成有所述多个气体排出孔的气体排出孔形成区域比所述气体排出面的与被处理基板对应的区域小。
2.如权利要求1所述的成膜装置，其特征在于：
所述气体排出面中的所述气体排出孔形成区域和与所述被处理基板对应的区域呈同心状，所述气体排出孔形成区域的直径比与所述被处理基板对应的区域的直径小。
3.如权利要求2所述的成膜装置，其特征在于：
所述气体排出孔形成区域的直径相对于与所述被处理基板对应的区域的直径的比例是66.6～93.4％。
4.如权利要求2所述的成膜装置，其特征在于：
所述气体排出孔形成区域的直径相对于与所述被处理基板对应的区域的直径的比例是73.3～86.7％。
5.如权利要求1至4中任一项所述的成膜装置，其特征在于：
从所述气体排出部件排出的处理气体是作为原料气体的TiCl4气体、作为还原气体的H2气体、和作为等离子体生成气体的Ar气体，在被处理基板上形成含Ti的金属膜。
6.如权利要求5所述的成膜装置，其特征在于：
所述TiCl4气体被所述等离子体激发，作为活性种主要生成TiCl3。
7.如权利要求6所述的成膜装置，其特征在于：
还包括对所述载置台上的被处理基板进行加热的加热机构，在成膜时通过所述加热机构将被处理基板加热到350～500℃的温度。
8.如权利要求6或7所述的成膜装置，其特征在于：
在成膜时从所述气体排出部件排出的气体流量为：
TiCl4气体：1～200mL/min(sccm)；
H2气体：1～10000mL/min(sccm)；
Ar气体流量：100～10000mL/min(sccm)。
9.如权利要求5至8中任一项所述的成膜装置，其特征在于：
还包括设置在与所述载置台连接的传送路径中的阻抗调整电路，通过该阻抗调整电路，使从等离子体看的所述传送路径的阻抗降低而使从等离子体流到基板的电流增加，使Ar离子高能量化。
10.如权利要求1至9中任一项所述的成膜装置，其特征在于：
所述等离子体生成装置以所述载置台为下部电极，以气体排出部件为上部电极，在所述上部电极和所述下部电极之间形成高频电场，从而生成等离子体。
11.一种气体排出部件，其在处理容器内与载置在载置台上的被处理基板相对配置，将处理气体向所述载置台上的被处理基板排出，在所述气体排出部件与所述载置台之间生成有等离子体的状态下，利用所述处理气体在被处理基板上形成规定的膜，所述气体排出部件的特征在于：
所述气体排出部件具有与所述载置台相对的气体排出面，在所述气体排出面形成有多个气体排出孔，
所述气体排出面中的形成有所述多个气体排出孔的气体排出孔形成区域比所述气体排出面的与被处理基板对应的区域小。
12.如权利要求11所述的气体排出部件，其特征在于：
所述气体排出面中的所述气体排出孔形成区域和与所述被处理基板对应的区域呈同心状，所述气体排出孔形成区域的直径比与所述被处理基板对应的区域的直径小。
13.如权利要求12所述的气体排出部件，其特征在于：
所述气体排出孔形成区域的直径相对于与所述被处理基板对应的区域的直径的比例是66.6～93.4％。
14.如权利要求12所述的气体排出部件，其特征在于：
所述气体排出孔形成区域的直径相对于与所述被处理基板对应的区域的直径的比例是73.3～86.7％。
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