TW201817912A - 成膜裝置及其所用之氣體吐出構件 - Google Patents
成膜裝置及其所用之氣體吐出構件 Download PDFInfo
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- TW201817912A TW201817912A TW106125699A TW106125699A TW201817912A TW 201817912 A TW201817912 A TW 201817912A TW 106125699 A TW106125699 A TW 106125699A TW 106125699 A TW106125699 A TW 106125699A TW 201817912 A TW201817912 A TW 201817912A
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- Prior art keywords
- gas
- film
- substrate
- processed
- gas discharge
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- 239000007924 injection Substances 0.000 title 1
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004356 Ti Raw Inorganic materials 0.000 description 2
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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Abstract
[課題] 提供一種如下述之技術:可在藉由電漿CVD進行成膜之際,調整基板外周部之膜厚而獲得所期望的膜厚面內均勻性。 [解決手段] 成膜裝置(100),係具有:處理容器(1),收容有晶圓(W):基座(2),在處理容器(1)內載置有晶圓:噴頭(10),與被載置於基座(2)的晶圓(W)相對向配置,將處理氣體朝向基座(2)上的晶圓(W)吐出:及高頻電源(41),在噴頭(10)與基座(2)之間生成電漿而激發處理氣體,藉由被電漿激發的處理氣體,在晶圓(W)上形成預定膜。噴頭(10),係具有與基座(2)相對向的氣體吐出面(17),在氣體吐出面(17),係形成有複數個氣體吐出孔(15),氣體吐出面(17)中之形成有複數個氣體吐出孔(15)的氣體吐出孔形成區域(18),係比氣體吐出面(17)之與晶圓(W)對應的區域小。
Description
[0001] 本發明,係關於成膜裝置及其所用之氣體吐出構件。
[0002] 作為在半導體晶圓等之基板上形成薄膜的手法,已知一種化學蒸鍍法(Chemical Vapor Deposition;CVD)。作為由CVD進行成膜的成膜裝置,係如下述者已廣為人知:在載置基板之載置台的上方,以與基板相對向的方式,設置吐出處理氣體的氣體吐出構件即噴頭,並使處理氣體從被設置於噴頭之氣體吐出面的複數個氣體吐出孔吐出。 [0003] 在像這樣的成膜裝置中,係基於對基板均勻地供給處理氣體的觀點,在噴頭之氣體吐出面中形成有複數個氣體吐出孔之氣體吐出孔形成區域的大小,係一般而言,等於或大於與載置台上之基板相對應的區域(例如參閱專利文獻1之第0024段及圖1、2)。 [0004] 而且,在上述專利文獻1中,係記載有如下述:在將噴頭中之氣體吐出面之氣體吐出孔形成區域的大小設成為等於或大於與載置台上之基板對應的區域後,為了使膜厚之面內均勻性提升,而對氣體吐出孔的徑與氣體吐出孔的配置下工夫。 [先前技術文獻] [專利文獻] [0005] [專利文獻1] 日本特開2013-48227號公報
[本發明所欲解決之課題] [0006] 然而,作為CVD的一種,雖已知藉由電漿來激發處理氣體而輔助處理氣體之解離的電漿CVD,但在電漿CVD的情況下,存在有基板外周部之膜厚變薄的情形,為了使膜厚之面內均勻性提升,而要求調整基板外周部之膜厚。 [0007] 但是,在電漿CVD中,係即便對氣體吐出孔的徑與氣體吐出孔的配置下工夫,亦難以調整基板外周部之膜厚,至今仍難以獲得所期望的膜厚面內均勻性。 [0008] 因此,本發明,係以提供一種如下述之技術為課題:可在藉由電漿CVD進行成膜之際,調整基板外周部之膜厚而獲得所期望的膜厚面內均勻性。 [用以解決課題之手段] [0009] 為了解決上述課題,本發明,提供一種成膜裝置,其係具有:處理容器,收容有被處理基板;載置台,在前述處理容器內載置有被處理基板;氣體吐出構件,與被載置於前述載置台的被處理基板相對向配置,將處理氣體朝向前述載置台上的被處理基板吐出;及電漿生成手段,在前述氣體吐出構件與前述載置台之間生成電漿而激發前述處理氣體,藉由被電漿激發的處理氣體,在被處理基板上形成預定膜,該成膜裝置,其特徵係,前述氣體吐出構件,係具有與前述載置台相對向的氣體吐出面,在前述氣體吐出面,係形成有複數個氣體吐出孔,前述氣體吐出面中之形成有前述複數個氣體吐出孔的氣體吐出孔形成區域,係比前述氣體吐出面之與被處理基板對應的區域小。 [0010] 又,本發明,提供一種氣體吐出構件,其係在處理容器內,與被載置於載置台的被處理基板相對向配置,將處理氣體朝向前述載置台上的被處理基板吐出,以在與前述載置台之間生成有電漿的狀態,藉由前述處理氣體,在被處理基板上形成預定膜,該氣體吐出構件,其特徵係,具有與前述載置台相對向的氣體吐出面,在前述氣體吐出面,係形成有複數個氣體吐出孔,前述氣體吐出面中之形成有前述複數個氣體吐出孔的氣體吐出孔形成區域,係比前述氣體吐出面之與被處理基板對應的區域小。 [0011] 前述氣體吐出面中之前述氣體吐出孔形成區域與對應於前述被處理基板的區域,係形成同心狀,前述氣體吐出孔形成區域的直徑,係可設成為比與前述被處理基板對應之區域的直徑小之構成。 [0012] 在該情況下,前述氣體吐出孔形成區域的直徑相對於與前述被處理基板對應之區域的直徑之比例,係66.6~93.4%為較佳,73.3~86.7%為更佳。 [0013] 從前述氣體吐出構件所吐出的處理氣體,係原料氣體即TiCl4
氣體、還原氣體即H2
氣體、電漿生成氣體即Ar氣體,且亦可為在被處理基板上形成包含有Ti的金屬膜者。在該情況下,藉由前述電漿激發前述TiCl4
氣體,作為活性種,生成TiClx
(x=1~4),主要是TiCl3
或TiCl2
為較佳。而且,可在主要生成TiCl3
的情況下變得更加有效。 [0014] 更具有:加熱機構,加熱前述載置台上的被處理基板,在成膜之際,藉由前述加熱機構,被處理基板被加熱至300~700℃的溫度為較佳。350~500℃為更佳。 [0015] 在形成包含有Ti之際,將從前述氣體吐出構件所吐出的氣體流量設成為TiCl4
氣體:1~200mL/min(sccm)、H2
氣體:1~10000mL/min(sccm)、Ar氣體:100~10000mL/min(sccm)為較佳,而設成為TiCl4
氣體:3~50mL/min(sccm)、H2
氣體:5~5000mL/min(sccm)、Ar氣體:100~5000mL/min(sccm)為更佳。 [0016] 更具有:阻抗調整電路,被設置於連接在前述載置台的傳送路徑,藉由該阻抗調整電路,使從電漿所見之前述傳送路徑的阻抗降低且使從電漿流向基板的電流增加,以使得Ar離子高能量化為較佳。 [0017] 前述電漿生成手段,係可設成為如下述者:將前述載置台作為下部電極,並將氣體吐出構件作為上部電極,在前述上部電極與下部電極之間形成高頻電場,藉此,生成電漿。 [發明之效果] [0018] 根據本發明,由於將氣體吐出構件構成為使氣體吐出面中之形成有複數個氣體吐出孔的氣體吐出孔形成區域比氣體吐出面之與被處理基板對應的區域小,因此,可提高被處理基板之外周之活性種的濃度,並可調整基板外周部之膜厚而獲得所期望的膜厚面內均勻性。
[0020] 以下,參閱附加圖面,具體地說明關於本發明之實施形態。 在以下的說明中,係以藉由電漿CVD,形成Ti膜作為包含有Ti之金屬膜的情況為例來加以說明。 [0021] 圖1,係表示本發明之一實施形態之成膜裝置之一例的概略剖面圖;圖2,係表示成膜裝置之氣體吐出構件即噴頭的底視圖。 [0022] 成膜裝置100,係被構成為藉由在平行平板電極形成高頻電場的方式,一面形成電漿,一面形成Ti膜之電漿CVD裝置。 [0023] 該成膜裝置100,係具有形成大致圓筒狀之金屬製之腔室1。在腔室1之底壁1b的中央部,係形成有圓形的孔50,在底壁1b,係以覆蓋該孔50的方式,設置有朝向下方突出的排氣室51。在排氣室51的側面,係連接有排氣管52,在該排氣管52,係連接有排氣裝置53。而且,藉由使該排氣裝置53動作的方式,可使腔室1內減壓至預定真空度。 [0024] 在腔室1的側壁,係設置有:搬入搬出口57,用以在與腔室1鄰接設置之未圖示的晶圓搬送室之間進行晶圓W之搬入搬出;及閘閥58,開關該搬入搬出口57。 [0025] 在腔室1的內部,係以藉由圓筒狀之支撐構件3來加以支撐其中央的狀態,配置有用以水平地支撐被處理基板即半導體晶圓例如矽晶圓(以下僅記載為晶圓)W的載置台(平台)即基座2。支撐構件3,係被支撐於排氣室51的底部。基座2及支撐構件3,係由AlN或Al2
O3
等的陶瓷所形。在基座2的外緣部,係設置有用以引導晶圓W的導引環4。亦可不設置導引環4,而在基座2的上面側設置晶圓W保持用之凹部。又,在基座2,係填埋有加熱器5,該加熱器5,係藉由從加熱器電源(未圖示)所供電的方式進行發熱,經由基座2,將晶圓W加熱至預定溫度。在基座2內,係在加熱器5上亦填埋有後述的電極42。另外,基座2,係亦可為鎳等的金屬製,在該情況下,不需電極42。又,在基座2為金屬製的情況下,係亦可為了使與腔室1的絕緣而插入絕緣構件。 [0026] 又,在基座2,係以可對基座2之表面突出/沒入地的方式,設置有用以支撐晶圓W並使其升降的3根(圖示僅顯示2根)晶圓支撐銷54,該些晶圓支撐銷54,係被支撐於支撐板55。而且,晶圓支撐銷54,係藉由氣缸等的驅動機構56,經由支撐板55而昇降。 [0027] 腔室1的頂壁1a,係經由絕緣構件9,以與基座2相對向的方式,設置有亦作為平行平板電極之上部電極的機能之預先混合型的噴頭10。噴頭10,係具有基底構件11與噴淋板12,噴淋板12的外周部,係經由貼附防止用之形成圓環狀的中間構件13,藉由未圖示的螺絲而被固定於基底構件11。噴淋板12,係形成圓板狀,在其外周形成有凸緣。而且,在基底構件11與噴淋板12之間,形成有氣體擴散空間14。基底構件11,係在其外周形成有凸緣部11a,該凸緣部11a被支撐於絕緣構件9。噴淋板12,係具有與基座2相對向的氣體吐出面17,在噴淋板12,係形成有從氣體吐出面17吐出氣體的複數個氣體吐出孔15。在基底構件11的中央附近,係形成有1個氣體導入孔16。在氣體導入孔16,係連接有後述之氣體供給機構20的氣體配管,從氣體供給機構20所供給至處理氣體便經由噴頭10被導入腔室1內。 [0028] 又,噴頭10的基底構件11,係設置有用於加熱噴頭10的加熱器47。在該加熱器47,係連接有加熱器電源(未圖示),藉由從加熱器電源對加熱器47進行供電的方式,噴頭10被加熱至所期望的溫度。在被形成於基底構件11之上部的凹部,係設置有隔熱構件49。 [0029] 如圖2所示,噴淋板12的氣體吐出面17,係呈圓形,並以成為與被載置於基座2上之晶圓W同心狀方式而設置。氣體吐出面17的直徑D1,係形成為比晶圓W的直徑D3大。又,噴淋板12的氣體吐出面17中之形成有複數個氣體吐出孔15的氣體吐出孔形成區域18,係比氣體吐出面17之與晶圓W對應的區域小,在與晶圓W之外周部對應的位置,係存在有氣體吐出孔。具體而言,氣體吐出孔形成區域18,係形成圓形狀,且形成與被載置於基座2上的晶圓W同心狀,氣體吐出孔形成區域18的直徑D2,係形成為比晶圓W的直徑D3小。但是,在此所謂的同心狀不必嚴格解釋,即便中心位置稍微偏移,亦包含於同心狀。 [0030] 在晶圓W之直徑D3為300mm的情況下,氣體吐出孔形成區域18的直徑D2,係200~280mm為較佳,220~260mm為更佳。亦即,D2相對於D3的比例,係66.6~93.4%為較佳,73.3~86.7%為更佳。 [0031] 另外,在本實施形態中,雖係在氣體吐出面17之氣體吐出孔形成區域18的外側未形成氣體吐出孔15,但只要為可獲得所期望之效果之範圍內的數,則亦可在氣體吐出孔形成區域18的外側形成氣體吐出孔15。 [0032] 氣體吐出孔15的徑或間隔,係與以往的噴頭相同,氣體吐出孔的徑,係例如0.50~7.0mm左右,較佳為0.65~1.8mm。氣體吐出孔的間隔(孔之中心間的距離),係例如3.0~10.0mm左右,較佳為4.3~8.6mm。 [0033] 氣體供給機構20,係具有:TiCl4
氣體供給源21,供給Ti原料氣體即TiCl4
氣體;Ar氣體供給源22,供給使用來作為電漿生成氣體或沖洗氣體的Ar氣體;H2
氣體供給源23,供給還原氣體即H2
氣體;NH3
氣體供給源24,供給氮化氣體即NH3
氣體;及N2
氣體供給源25,供給N2
氣體。而且,在TiCl4
氣體供給源21,係連接有TiCl4
氣體供給管線31;在Ar氣體供給源22,係連接有Ar氣體供給管線32;在H2
氣體供給源23,係連接有H2
氣體供給管線33;NH3
氣體供給源24,係連接有NH3
氣體供給管線34;在N2
氣體供給源25,係連接有N2
氣體供給管線35。而,在各氣體管線,係設置有質流控制器37及夾著質流控制器37的2個閥36。 [0034] 在TiCl4
氣體供給管線31,係連接有Ar氣體供給管線32。又,在H2
氣體供給管線33,係連接有NH3
氣體供給管線34及N2
氣體供給管線35。TiCl4
氣體供給管線31及H2
氣體供給管線33,係被連接於氣體混合部38,在此所混合的混合氣體會經由氣體配管39而連接於上述氣體導入孔16。而且,混合氣體,係經由氣體導入孔16而到達氣體擴散空間14,並通過噴淋板12之氣體吐出孔15而朝向腔室1內的晶圓W被加以吐出。 [0035] 噴頭10係透過匹配器40而連接有高頻電源41,可自該高頻電源41將高頻電力供給至噴頭10。噴頭10,係具有平行平板電極之上部電極的機能。另一方面,填埋於基座2的上述電極42,係具有平行平板電極之下部電極的機能。因此,藉由將高頻電力供給至噴頭10的方式,在噴頭10與電極42之間形成高頻電場,藉由該高頻電場,使從噴頭10所吐出的處理氣體電漿化。高頻電源41的頻率,係被設定成200kHz~13.56MHz為較佳,典型而言,係使用450kHz。 [0036] 在被連接於電極42的傳送路徑42a,係連接有阻抗調整電路43。阻抗調整電路43,係用以使與從電漿所見的電極42連接之傳送路徑42a的阻抗降低,且使從電漿流向電極42的電流增加者,例如由線圈44與可變電容器45所構成。流向傳送路徑42a的電流,係藉由電流計46加以檢測,基於該檢測值,控制阻抗調整電路43的電抗。 [0037] 成膜裝置100,係具有控制其構成部即閥36、質流控制器37、匹配器40、高頻電源41、可變電容器45、驅動機構56、加熱器電源等的控制部60。控制部60,係具有CPU(電腦),並具有進行上述各構成部之控制的主控制部、輸入裝置、輸出裝置、顯示裝置及記憶裝置。在記憶裝置,係安裝有記憶媒體,該記憶媒體,係儲存有用以控制在成膜裝置100所執行之處理的程式,亦即處理配方,主控制部,係讀出被記憶於記憶媒體的預定處理配方,基於該處理配方,進行控制以使得成膜裝置100進行預定處理。 [0038] 其次,說明關於使用如以上般之成膜裝置100所進行之Ti膜的成膜處理。 [0039] 在本實施形態中,係作為晶圓W,例如如圖3所示,使用具有如下述之構造者:在Si基板110上形成層間絕緣膜111,並在層間絕緣膜111形成到達至Si基板110之不純物擴散區域110a的接觸孔112。 [0040] 首先,在調整了腔室1內的壓力後,將閘閥58設成為開啟,從搬送室(未圖示)經由搬入搬出口57,將具有圖3之構造的晶圓W搬入至腔室1內。而且,一面將腔室1內維持為預定真空度,一面預備加熱晶圓W。進行加熱一預定時間,在晶圓W之溫度大致穩定的時點,使電漿生成氣體即Ar氣體、還原氣體即H2
氣體、Ti原料氣體即TiCl4
氣體流向未圖示的預流管線而進行預流後,將氣體流量及壓力保持為相同而切換為成膜用之管線,並將該些氣體經由噴頭10導入至腔室1內。 [0041] 而且,在開始該些氣體之導入後,將高頻電力從高頻電源41施加至噴頭10,生成被導入至腔室1內之Ar氣體、H2
氣體、TiCl4
氣體的電漿,並在被加熱器5加熱至預定溫度的晶圓W上,使電漿化的氣體發生反應。藉此,如圖4(a)所示,使Ti膜113沈積於Si基板(Si部分)110表面。而且,如圖4(b)所示,該Ti膜113與接觸孔112之底的Si基板110發生反應,而形成TiSix
膜114。 [0042] 此時,藉由前述電漿激發前述TiCl4
氣體,作為活性種,生成TiClx
(x=1~4),主要是TiCl3
或TiCl2
為較佳。特別是,相對於TiCl4
氣體之流量,儘可能降低H2
氣體的流量,並將藉由電漿所生成之活性種設成為以附著係數低於TiCl2
的TiCl3
為主體者,且儘可能增加Ar氣體流量而提高Ar離子的蝕刻作用為較佳。在此所謂的“TiCl3
為主體”,係指TiCl4
被分解成TiCl2
與TiCl3
,且TiCl2
< TiCl3
的狀態。藉此,可儘可能減少孔開口之突出,從而獲得階梯覆蓋能力高的Ti膜。又,藉由Ar離子的衝擊所致之吸附於Ti膜表面的Cl脫離促進作用,即便在成膜溫度為500℃以下的低溫,亦可形成殘留氯較少之低電阻的Ti膜。 [0043] 基於像這樣的觀點,成膜之際的氣體流量,係如下述的範圍為較佳: TiCl4
氣體流量:1~200mL/min(sccm) Ar氣體流量:100~10000mL/min(sccm) H2
氣體流量:1~10000mL/min(sccm) [0044] 更佳為: TiCl4
氣體流量:3~50mL/min(sccm) Ar氣體流量:100~5000mL/min(sccm) H2
氣體流量:5~5000mL/min(sccm) 又,H2
氣體/Ar氣體的流量比,係0.001~50為較佳。 [0045] 另外,氣體之流量的單位,雖係使用mL/min,但由於氣體會因溫度及氣壓而使得體積有較大地變化,因此,在本發明中,係使用換算成標準狀態的值。另外,由於換算成標準狀態的流量,係通常以sccm(Standard Cubic Centimeter per Minutes)來表示,因此,併記為sccm。在此的標準狀態,係溫度為0℃(273.15K)、氣壓為1atm(101325Pa)的狀態。 [0046] 關於成膜溫度,係可設成為300~700℃的範圍。但是,基於元件之耐熱性及不純物擴散光之抑制的觀點,500℃以下為較佳。如上述般,在本實施形態中,係由於Ar離子的作用較大,因此,即便在500℃以下的低溫,亦可設成為殘留氯較少之低電阻的Ti膜,並可設成為元件上較佳的成膜溫度。另一方向,當溫度過低時,由於難以獲得良好的膜質,因此,350℃以上為較佳。亦即,較佳的成膜溫度(晶圓溫度),係350~500℃。 [0047] 腔室1內的壓力,雖係壓力越低則電漿損傷越降低,但當壓力過度降低時,會使得Ti膜之面內均勻性(電阻值)明顯地惡化。又,當壓力過度高時,由於Ti膜的電阻值會變高,故不佳。因此,考慮該些點來規定較佳的範圍。較佳的範圍,係13.3~1333Pa(0.1~10Torr)。 [0048] 為了提高Ar離子的作用,則需要較大的功率,但當增大高頻功率時,從電漿流向腔室壁部的電流會變大而使得電漿變得不穩定,恐有產生異常放電等之虞。因此,基於不增大高頻功率而儘可能提高Ar離子之作用的觀點,可在被連接於基座2內之電極42的傳送路徑42a設置阻抗調整電路43,從而調整從電漿所見之傳送路徑42a的阻抗。 [0049] 亦即,從電漿至晶圓W之間,係存在有所謂的電漿鞘與基座2之電容成分,該些成為電阻,但如圖5所示,藉由阻抗調整電路43來消除該些電容成分,儘可能使傳送路徑42的阻抗降低,藉此,便可有效地增大從電漿經由晶圓W流向傳送路徑42a的電流,並以比較小的功率使Ar離子之作用充分地發揮。又,如此一來,藉由增大從電漿流向晶圓W之電流的方式,可使從電漿流向腔室壁部的電流相對地變小,而提高電漿的穩定性。 [0050] 另外,阻抗調整電路,係不限於組合如圖1般之線圈44與可變電容器45來調整可變電容器的構成者。 [0051] 然而,如以上般,藉由採用以TiCl3
及Ar離子之作用為主體的製程,雖可在500℃以下的低溫獲得階梯覆蓋能力高且低電阻的Ti膜,但在以往的成膜裝置中,係發現到膜厚產生不均勻,而晶圓W之外周部分的膜厚變薄之情形。 [0052] 具體而言,在以往的成膜裝置中,係如圖6所示,使用在噴淋板12之氣體吐出面17的大致整面形成氣體吐出孔15而氣體吐出孔形成區域之直徑等於或大於晶圓W之直徑的噴頭,其膜厚分布,係如圖7、圖8所示者。 [0053] 圖7,係表示在使用以往之噴頭而形成了Ti膜的情況下之成膜時間與晶圓W的中心及外周的膜厚及平均膜厚之關係的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。從該圖可知,成膜時間越長,則中心與外周的膜厚差越擴大。圖8,係表示在使用以往之噴頭而形成了Ti膜的情況下之各成膜時間中之徑方向之膜厚分布的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。從該些圖可知,使用了以往之噴頭的情況下,係膜厚會在晶圓之外周部分變薄。 [0054] 有助於成膜之TiCl3
的密度,係被認為是膜厚在晶圓之外周部分變薄的原因。因此,首先,嘗試著使用被形成在氣體吐出孔比以往之噴頭廣泛的區域之噴頭(寬噴頭),並將TiCl4
供給至比以往外側。在此,以往噴頭之氣體吐出孔形成區域的直徑為f314mm,相對於此,在寬噴頭中,係增大噴頭之氣體吐出面的面積而將氣體吐出孔形成區域的直徑設成為f362mm。 [0055] 在圖9中,表示在使用了以往噴頭的情況下與使用了寬噴頭的情況下,求得出徑方向之成膜速度分布及TiCl3
密度分布的結果。圖9(a),係成膜速度分布的結果;(b),係TiCl3
模擬密度分布的結果。如該圖所示,與預期相反地表示如下述之情形:與以往噴頭相比,寬噴頭其成膜速度及TiCl3
密度在更內側降低。 [0056] 圖10,係表示兩者的噴頭及基座之間之電漿之流速分布之模擬結果的圖;(a),係以往噴頭的結果;(b),係寬噴頭的結果。在該圖中,係主要表示外周側的結果,顏色越濃表示流速越大。從該圖可知,在寬噴頭中,係噴頭與基座之間的流速隨氣體吐出孔形成區域往外側擴大的量而降低。 因此,在寬噴頭中,係壓力隨著噴頭與基座之間的流速降低而降低,且TiCl3
往下游之對流通量便降低,藉此,推斷出成膜速度的開始降低位置往更內側移動。 [0057] 為了對其進行驗證,而使用以往噴頭,在供給至噴頭與基座之間的氣體流量不同之條件下,進行了實驗。相對於條件1,在條件2中,係將TiCl4
/H2
/Ar各個氣體流量設成為約2倍。圖11,係表示兩者的噴頭及基座之間之電漿之流速分布之模擬結果的圖;(a),係條件1的結果;(b),係條件2的結果。在該圖中,亦主要表示外周側的結果,顏色越濃表示流速越大。從該圖可知,與條件1相比,條件2其外周部分之流速較大。 [0058] 圖12,係表示求得出兩者之徑方向的成膜速度分布及TiCl3
密度分布之模擬結果的圖;(a),係條件1的結果;(b),係條件2的結果。如該圖所示,表示與條件2相比,流速較小之條件1其成膜速度及TiCl3
密度在更內側降低,且藉由噴頭與基座之間之流速降低的方式,可確認晶圓外周部分的TiCl3
密度降低而成膜速度降低。 [0059] 因此,可驗證在使用了寬噴頭之際,噴頭及基座之間之氣體的流速變小,此將導致晶圓外周部之TiCl3
的密度降低,而晶圓外周部之成膜速度的開始降低位置便往內側移動。 [0060] 因此,在本實施形態中,係為了使噴頭及基座之間之氣體的流速上升,而將噴頭10設成為使噴淋板12的氣體吐出面17中之形成有複數個氣體吐出孔15的氣體吐出孔形成區域18小於與晶圓W對應之區域的構成。 [0061] 關於以往噴頭與將氣體吐出孔形成區域設成為比晶圓區域狹窄之本實施形態的噴頭(窄噴頭),藉由模擬,對噴頭與基座之間的電漿中之TiCl3
濃度與流速進行了比較。窄噴頭之氣體吐出孔形成區域的直徑,係設成為f200mm(晶圓直徑300mm)。 [0062] 在圖13表示其結果。圖13中,(a),係以往噴頭的結果;(b),係窄噴頭的結果。在該圖中,在外周側中,係顏色越濃表示TiCl3
濃度及流速越大。如該圖所示,使用了以往噴頭的情況下,係存在有噴頭與基座之間的流速較低,TiCl3
濃度在晶圓外周部變低的傾向,相對於此,在本實施形態的窄噴頭中,係與以往噴頭相比,流速從更內側上升,關於TiCl3
濃度,係表示出在氣體吐出孔形成區域之緊鄰的外側上升,且即便在不存在有氣體吐出孔之外周部分,亦維持較高的濃度。 [0063] 其次,使用窄噴頭,求得出實際的膜厚分布。 圖14,係表示在使用窄噴頭而形成了Ti膜的情況下之成膜時間與晶圓W的中心及外周的膜厚及平均膜厚之關係的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。與圖7進行對比可明顯得知,使用了以往噴頭的情況下,係當成膜時間變長時,則中心與外周的膜厚差擴大,相對於此,藉由使用窄噴頭的方式,即便成膜時間變長,中心與外周的膜厚差亦不會擴大。又,圖15,係表示在使用窄噴頭而形成了Ti膜的情況下之各成膜時間中之徑方向之膜厚分布的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。與圖8進行對比可明顯得知,使用了以往之噴頭的情況下,係膜厚在晶圓之外周部分急遽地變薄,相對於此,藉由使用窄噴頭的方式,晶圓外周部分之膜厚比以往噴頭厚。 [0064] 由此可確認,藉由將噴頭10設成為使噴淋板12的氣體吐出面17中之形成有複數個氣體吐出孔15的氣體吐出孔形成區域18小於與晶圓W對應之區域的構成之方式,可調整成使晶圓外周部的膜厚變厚。 [0065] 在圖16中,示意地說明此時之晶圓外周部之膜厚調整的概念。使用了以往之噴頭的情況下,係如圖16(a)所示,直至與晶圓W之外側對應的區域,形成有氣體吐出孔15,從該些氣體吐出孔15吐出TiCl4
,並在電漿中成為TiCl3
。在該情況下,如上述般,在晶圓W的外周部中,係有助於成膜之TiCl3
的濃度變小而膜厚變薄。相對於此,在本實施形態的窄噴頭中,係如圖16(b)所示,僅在與晶圓W之中央區域對應的區域形成氣體吐出孔,藉此,以在晶圓W的外周部,從TiCl4
有效率地轉換成TiCl3
的方式,TiCl3
在與晶圓W之外周部對應的部分增加,且晶圓W之外周部分的膜厚增加。 [0066] 晶圓外周部的膜厚,係可藉由氣體吐出孔形成區域18的大小來進行調整,並可藉由因應此時之膜厚分布來使氣體吐出孔形成區域18之大小最佳化的方式,提高徑方向之膜厚分布的均勻性。 [0067] 具體而言,氣體吐出孔形成區域18,係形成圓形狀,且形成與被載置於基座2上的晶圓W同心狀,氣體吐出孔形成區域18的直徑D2,係形成為比晶圓W的直徑D3小。基於有效地調整晶圓外周部之膜厚的觀點,在晶圓W之直徑D3為300mm的情況下,氣體吐出孔形成區域18的直徑D2,係200~280mm為較佳,220~260mm為更佳。亦即,D2相對於D3的比例,係66.6~93.4%為較佳,73.3~86.7%為更佳。 [0068] 藉由使用了像這樣的噴頭之成膜裝置100來進行Ti膜的成膜後,亦可因應所需實施Ti膜之氮化處理。在該氮化處理中,係上述Ti膜的成膜結束後,停止TiCl4
氣體,在流通著H2
氣體及Ar氣體的狀態下,一面將腔室1內加熱至適宜溫度,一面流通作為氮化氣體的NH3
氣體,並且從高頻電源41對噴頭10施加高頻電力而使處理氣體電漿化,藉由電漿化的處理氣體,將Ti膜的表面加以氮化。藉此,保護Ti膜。 [0069] Ti膜成膜後或氮化處理後,開啟閘閥58,經由搬入搬出口57,將晶圓W往未圖示的晶圓搬送室搬出。 [0070] 另外,本發明,係不限定於上述實施形態,可在本發明之要旨的範圍內進行各種變形。 例如,在本例中,雖係表示了關於同時地供給原料氣體、還原氣體而進行成膜的情況,但亦包含如下述之情況:夾著Ar氣體等的惰性氣體所致之沖洗而交互地反複成膜氣體與還原氣體的供給,在生成了電漿的狀態下,藉由原子層沈積法(ALD法)進行成膜。 [0071] 又,在上述實施形態中,雖係說明了關於藉由電漿CVD形成Ti膜的情況,但亦可為形成包含有如Ti成膜時添加氮源般之Ti的金屬膜之情況,又,只要為在噴頭與基座之間形成電漿,生成原料氣體之活性種而形成預定膜的裝置,則可進行應用。 [0072] 而且,在本實施形態中,雖係藉由對噴頭施加高頻電力的方式,形成高頻電場而生成了電漿,但亦可對基座施加高頻電力,又,不限於如上述實施形態般之平行平板型的電漿生成機構,亦可為生成感應耦合電漿或微波電漿等的其他電漿生成機構。 [0073] 再者,雖以使用半導體晶圓作為被處理基板之情況為例而進行了說明,但並不限於此,當然即便為玻璃基板或陶瓷基板等的其他被處理基板亦可應用本發明。
[0074]
1‧‧‧腔室
2‧‧‧基座
5‧‧‧加熱器
10‧‧‧噴頭
12‧‧‧噴淋板
15‧‧‧氣體吐出孔
17‧‧‧氣體吐出面
18‧‧‧氣體吐出孔形成區域
20‧‧‧氣體供給機構
21‧‧‧TiCl4
氣體供給源
22‧‧‧Ar氣體供給源
23‧‧‧H2
氣體供給源
41‧‧‧高頻電源
43‧‧‧阻抗調整電路
53‧‧‧排氣裝置
60‧‧‧控制部
100‧‧‧成膜裝置
110‧‧‧Si基板
111‧‧‧層間絕緣膜
112‧‧‧接觸孔
113‧‧‧Ti膜
114‧‧‧TiSix
膜
W‧‧‧半導體晶圓
[0019] [圖1] 表示本發明之一實施形態之成膜裝置之一例的概略剖面圖。 [圖2] 表示圖1之成膜裝置之噴頭的底視圖。 [圖3] 表示在形成Ti膜之際所使用之晶圓之構造例的剖面圖。 [圖4] 表示Ti膜成膜後及矽化後之晶圓之狀態的剖面圖。 [圖5] 表示用以說明阻抗調整電路之機能之成膜裝置的示意圖。 [圖6] 表示以往之噴頭的底視圖。 [圖7] 表示在使用以往之噴頭而形成了Ti膜的情況下之成膜時間與晶圓W的中心及外周的膜厚及平均膜厚之關係的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。 [圖8] 表示在使用以往之噴頭而形成了Ti膜的情況下之各成膜時間中之徑方向之膜厚分布的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。 [圖9] 表示在使用了以往噴頭的情況下與使用了寬噴頭的情況下,求得出徑方向之成膜速度分布及TiCl3
密度分布之模擬結果的圖;(a),係成膜速度分布的結果;(b),係TiCl3
密度分布的結果。 [圖10] 表示使用了以往噴頭的情況下與使用了寬噴頭的情況下之噴頭及基座之間之電漿中之流速分布之模擬結果的圖。 [圖11] 表示使用以往噴頭,以噴頭與基座之間之氣體流量不同的條件,生成了電漿的情況下之噴頭及基座之間之電漿中之流速分布之模擬結果的圖。 [圖12] 表示在使用以往噴頭,以噴頭與基座之間之氣體流量不同的條件生成了電漿的情況下,求得出徑方向之成膜速度分布及TiCl3
密度分布之模擬結果的圖;(a),係成膜速度分布的結果;(b),係TiCl3
密度分布的結果。 [圖13] 表示關於以往噴頭與實施形態之窄噴頭,藉由模擬來對噴頭與基座之間的電漿中之TiCl3
濃度與電漿中之流速分布進行比較之結果的圖。 [圖14] 表示在使用實施形態之窄噴頭而形成了Ti膜的情況下之成膜時間與晶圓W的中心及外周的膜厚及平均膜厚之關係的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。 [圖15] 表示在使用實施形態之窄噴頭而形成了Ti膜的情況下之各成膜時間中之徑方向之膜厚分布的圖;(a),係SiO2
膜上的結果;(b),係Si基板上的結果。 [圖16] 用以說明本發明的實施形態中之晶圓外周部之膜厚調整之概念的示意圖;(a),係表示使用了以往之噴頭的情況下之TiCl4
及TiCl3
的分布者;(b),係表示使用了實施形態之噴頭的情況下之TiCl4
及TiCl3
的分布者。
Claims (14)
- 一種成膜裝置,係具有:處理容器,收容有被處理基板:載置台,在前述處理容器內載置有被處理基板:氣體吐出構件,與被載置於前述載置台的被處理基板相對向配置,將處理氣體朝向前述載置台上的被處理基板吐出:及電漿生成手段,在前述氣體吐出構件與前述載置台之間生成電漿而激發前述處理氣體,藉由被電漿激發的處理氣體,在被處理基板上形成預定膜,該成膜裝置,其特徵係, 前述氣體吐出構件,係具有與前述載置台相對向的氣體吐出面,在前述氣體吐出面,係形成有複數個氣體吐出孔, 前述氣體吐出面中之形成有前述複數個氣體吐出孔的氣體吐出孔形成區域,係比前述氣體吐出面之與被處理基板對應的區域小。
- 如申請專利範圍第1項之成膜裝置,其中, 前述氣體吐出面中之前述氣體吐出孔形成區域與對應於前述被處理基板的區域,係形成同心狀,前述氣體吐出孔形成區域的直徑,係比與前述被處理基板對應之區域的直徑小。
- 如申請專利範圍第2項之成膜裝置,其中, 前述氣體吐出孔形成區域的直徑相對於與前述被處理基板對應之區域的直徑之比例,係66.6~93.4%。
- 如申請專利範圍第2項之成膜裝置,其中, 前述氣體吐出孔形成區域的直徑相對於與前述被處理基板對應之區域的直徑之比例,係73.3~86.7%。
- 如申請專利範圍第1~4項中任一項之成膜裝置,其中, 從前述氣體吐出構件所吐出的處理氣體,係原料氣體即TiCl4 氣體、還原氣體即H2 氣體、電漿生成氣體即Ar氣體,在被處理基板上形成包含有Ti的金屬膜。
- 如申請專利範圍第5項之成膜裝置,其中, 藉由前述電漿激發前述TiCl4 氣體,主要生成TiCl3 作為活性種。
- 如申請專利範圍第6項之成膜裝置,其中,更具有: 加熱機構,加熱前述載置台上的被處理基板,在成膜之際,藉由前述加熱機構,被處理基板被加熱至350~500℃的溫度。
- 如申請專利範圍第6項之成膜裝置,其中, 在成膜之際,從前述氣體吐出構件所吐出的氣體流量為: TiCl4 氣體流:1~200mL/min(sccm), H2 氣體:1~10000mL/min(sccm), Ar氣體流量:100~10000mL/min(sccm)。
- 如申請專利範圍第5項之成膜裝置,其中,更具有: 阻抗調整電路,被設置於連接在前述載置台的傳送路徑,藉由該阻抗調整電路,使從電漿所見之前述傳送路徑的阻抗降低且使從電漿流向基板的電流增加,以使得Ar離子高能量化。
- 如申請專利範圍第1~4項中任一項之成膜裝置,其中, 前述電漿生成手段,係將前述載置台作為下部電極,並將氣體吐出構件作為上部電極,在前述上部電極與下部電極之間形成高頻電場,藉此,生成電漿。
- 一種氣體吐出構件,係在處理容器內,與被載置於載置台的被處理基板相對向配置,將處理氣體朝向前述載置台上的被處理基板吐出,以在與前述載置台之間生成有電漿的狀態,藉由前述處理氣體,在被處理基板上形成預定膜,該氣體吐出構件,其特徵係, 具有與前述載置台相對向的氣體吐出面,在前述氣體吐出面,係形成有複數個氣體吐出孔, 前述氣體吐出面中之形成有前述複數個氣體吐出孔的氣體吐出孔形成區域,係比前述氣體吐出面之與被處理基板對應的區域小。
- 如申請專利範圍第11項之氣體吐出構件,其中, 前述氣體吐出面中之前述氣體吐出孔形成區域與對應於前述被處理基板的區域,係形成同心狀,前述氣體吐出孔形成區域的直徑,係比與前述被處理基板對應之區域的直徑小。
- 如申請專利範圍第12項之氣體吐出構件,其中, 前述氣體吐出孔形成區域的直徑相對於與前述被處理基板對應之區域的直徑之比例,係66.6~93.4%。
- 如申請專利範圍第12項之氣體吐出構件,其中, 前述氣體吐出孔形成區域的直徑相對於與前述被處理基板對應之區域的直徑之比例,係73.3~86.7%。
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JP7094154B2 (ja) * | 2018-06-13 | 2022-07-01 | 東京エレクトロン株式会社 | 成膜装置および成膜方法 |
JP7080111B2 (ja) * | 2018-06-19 | 2022-06-03 | 東京エレクトロン株式会社 | 金属膜の形成方法及び成膜装置 |
JP2020084253A (ja) * | 2018-11-21 | 2020-06-04 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
CN111218667A (zh) * | 2018-11-23 | 2020-06-02 | 北京北方华创微电子装备有限公司 | 一种气体分配装置的表面处理方法及沉积设备 |
JP7023826B2 (ja) * | 2018-12-07 | 2022-02-22 | 株式会社ニューフレアテクノロジー | 連続成膜方法、連続成膜装置、サセプタユニット、及びサセプタユニットに用いられるスペーサセット |
JP7199286B2 (ja) * | 2019-03-29 | 2023-01-05 | 東京エレクトロン株式会社 | 基板処理装置 |
JP2023518718A (ja) * | 2020-03-19 | 2023-05-08 | ラム リサーチ コーポレーション | シャワーヘッドパージカラー |
JP2022044209A (ja) * | 2020-09-07 | 2022-03-17 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
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JP3574651B2 (ja) | 2002-12-05 | 2004-10-06 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
US7737005B2 (en) * | 2004-04-09 | 2010-06-15 | Tokyo Electron Limited | Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program |
JP5193494B2 (ja) * | 2007-04-27 | 2013-05-08 | 東京エレクトロン株式会社 | Ti膜の成膜方法および記憶媒体 |
JP5332362B2 (ja) * | 2008-07-11 | 2013-11-06 | 東京エレクトロン株式会社 | プラズマ処理装置、プラズマ処理方法及び記憶媒体 |
CN102089867B (zh) * | 2008-07-11 | 2013-11-27 | 东京毅力科创株式会社 | 等离子体处理装置 |
JP2013048227A (ja) | 2011-07-25 | 2013-03-07 | Tokyo Electron Ltd | シャワーヘッド装置及び成膜装置 |
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US10100408B2 (en) * | 2014-03-03 | 2018-10-16 | Applied Materials, Inc. | Edge hump reduction faceplate by plasma modulation |
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