CH681921A5 - - Google Patents
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- Publication number
- CH681921A5 CH681921A5 CH112291A CH112291A CH681921A5 CH 681921 A5 CH681921 A5 CH 681921A5 CH 112291 A CH112291 A CH 112291A CH 112291 A CH112291 A CH 112291A CH 681921 A5 CH681921 A5 CH 681921A5
- Authority
- CH
- Switzerland
- Prior art keywords
- etching
- silicon wafer
- paddle
- stop layer
- overload protection
- Prior art date
Links
- 238000000034 method Methods 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 24
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 7
- 230000001133 acceleration Effects 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 1
- 238000003631 wet chemical etching Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 24
- 238000002161 passivation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19904016472 DE4016472A1 (de) | 1990-05-22 | 1990-05-22 | Verfahren zur herstellung von mikromechanischen sensoren mit ueberlastsicherung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH681921A5 true CH681921A5 (enrdf_load_stackoverflow) | 1993-06-15 |
Family
ID=6406957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH112291A CH681921A5 (enrdf_load_stackoverflow) | 1990-05-22 | 1991-04-15 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPH0794760A (enrdf_load_stackoverflow) |
| CH (1) | CH681921A5 (enrdf_load_stackoverflow) |
| DE (1) | DE4016472A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2245366A (enrdf_load_stackoverflow) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5233213A (en) * | 1990-07-14 | 1993-08-03 | Robert Bosch Gmbh | Silicon-mass angular acceleration sensor |
| US5264696A (en) * | 1991-05-20 | 1993-11-23 | Olympus Optical Co., Ltd. | Cantilever chip for scanning probe microscope having first and second probes formed with different aspect ratios |
| DE4129218A1 (de) * | 1991-09-03 | 1993-03-04 | Deutsche Aerospace | Beschleunigungssensor, auf mikromechanischem wege hergestellt |
| DE4206677C1 (enrdf_load_stackoverflow) * | 1992-02-28 | 1993-09-02 | Siemens Ag, 80333 Muenchen, De | |
| DE4331798B4 (de) * | 1993-09-18 | 2004-08-26 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanischen Bauelementen |
| DE19522004A1 (de) * | 1995-06-21 | 1997-01-02 | Inst Mikrotechnik Mainz Gmbh | Herstellungsverfahren von teilbeweglichen Mikrostrukturen auf der Basis einer trockenchemisch geätzten Opferschicht |
| FR2742230B1 (fr) * | 1995-12-12 | 1998-01-09 | Sextant Avionique | Accelerometre et procede de fabrication |
| DE19608370A1 (de) * | 1996-03-05 | 1996-07-25 | Josef Dr Lechner | Verfahren zur Herstellung mikromechanischer Kanäle mit Anschluß an die Umgebungsatmosphäre |
| US6555480B2 (en) | 2001-07-31 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate with fluidic channel and method of manufacturing |
| US6981759B2 (en) | 2002-04-30 | 2006-01-03 | Hewlett-Packard Development Company, Lp. | Substrate and method forming substrate for fluid ejection device |
| US6554403B1 (en) | 2002-04-30 | 2003-04-29 | Hewlett-Packard Development Company, L.P. | Substrate for fluid ejection device |
| JP4216525B2 (ja) * | 2002-05-13 | 2009-01-28 | 株式会社ワコー | 加速度センサおよびその製造方法 |
| US6883903B2 (en) | 2003-01-21 | 2005-04-26 | Martha A. Truninger | Flextensional transducer and method of forming flextensional transducer |
| US6821450B2 (en) | 2003-01-21 | 2004-11-23 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| US6910758B2 (en) | 2003-07-15 | 2005-06-28 | Hewlett-Packard Development Company, L.P. | Substrate and method of forming substrate for fluid ejection device |
| DE10334243B4 (de) * | 2003-07-28 | 2013-11-28 | Robert Bosch Gmbh | Mikromechanisches Verfahren zum Herstellen eines flexiblen Schichtelements |
| DE10345447B4 (de) * | 2003-09-30 | 2007-04-26 | Infineon Technologies Ag | Verfahren zum Herstellen eines Halbleiter-Bauteils |
| WO2008012846A1 (en) | 2006-07-26 | 2008-01-31 | Stmicroelectronics S.R.L. | Planar microelectromechanical device having a stopper structure for out-of-plane movements |
| CN106290985B (zh) * | 2016-07-26 | 2019-04-12 | 广东合微集成电路技术有限公司 | 一种电容式复合传感器及其制造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4522682A (en) * | 1982-06-21 | 1985-06-11 | Rockwell International Corporation | Method for producing PNP type lateral transistor separated from substrate by O.D.E. for minimal interference therefrom |
| US4597003A (en) * | 1983-12-01 | 1986-06-24 | Harry E. Aine | Chemical etching of a semiconductive wafer by undercutting an etch stopped layer |
| US4670092A (en) * | 1986-04-18 | 1987-06-02 | Rockwell International Corporation | Method of fabricating a cantilever beam for a monolithic accelerometer |
| DE3802545A1 (de) * | 1988-01-28 | 1989-08-10 | Fraunhofer Ges Forschung | Mikropumpe zur foerderung kleinster gasmengen |
| US4882933A (en) * | 1988-06-03 | 1989-11-28 | Novasensor | Accelerometer with integral bidirectional shock protection and controllable viscous damping |
-
1990
- 1990-05-22 DE DE19904016472 patent/DE4016472A1/de active Granted
-
1991
- 1991-04-15 CH CH112291A patent/CH681921A5/de not_active IP Right Cessation
- 1991-05-13 JP JP10624691A patent/JPH0794760A/ja active Pending
- 1991-05-16 GB GB9110581A patent/GB2245366A/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| DE4016472C2 (enrdf_load_stackoverflow) | 1992-04-09 |
| DE4016472A1 (de) | 1991-11-28 |
| GB2245366A (en) | 1992-01-02 |
| JPH0794760A (ja) | 1995-04-07 |
| GB9110581D0 (en) | 1991-07-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PLX | Patent declared invalid from date of grant onwards |