CH621657A5 - - Google Patents

Download PDF

Info

Publication number
CH621657A5
CH621657A5 CH996477A CH996477A CH621657A5 CH 621657 A5 CH621657 A5 CH 621657A5 CH 996477 A CH996477 A CH 996477A CH 996477 A CH996477 A CH 996477A CH 621657 A5 CH621657 A5 CH 621657A5
Authority
CH
Switzerland
Prior art keywords
column
row
line
current
cell
Prior art date
Application number
CH996477A
Other languages
German (de)
English (en)
Inventor
Karvel Kuhn Thornber
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH621657A5 publication Critical patent/CH621657A5/de

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17704Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form the logic functions being realised by the interconnection of rows and columns

Landscapes

  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
CH996477A 1976-08-16 1977-08-15 CH621657A5 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/714,650 US4056807A (en) 1976-08-16 1976-08-16 Electronically alterable diode logic circuit

Publications (1)

Publication Number Publication Date
CH621657A5 true CH621657A5 (sv) 1981-02-13

Family

ID=24870914

Family Applications (1)

Application Number Title Priority Date Filing Date
CH996477A CH621657A5 (sv) 1976-08-16 1977-08-15

Country Status (12)

Country Link
US (1) US4056807A (sv)
JP (1) JPS5323531A (sv)
BE (1) BE857711A (sv)
CA (1) CA1073057A (sv)
CH (1) CH621657A5 (sv)
DE (1) DE2735976C3 (sv)
ES (1) ES461619A1 (sv)
FR (1) FR2362443A1 (sv)
GB (1) GB1536374A (sv)
IT (1) IT1083910B (sv)
NL (1) NL7708974A (sv)
SE (1) SE414569B (sv)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4307379A (en) * 1977-11-10 1981-12-22 Raytheon Company Integrated circuit component
JPS5619651A (en) * 1979-07-26 1981-02-24 Fujitsu Ltd Semiconductor ic device
JPS5750545Y2 (sv) * 1979-10-05 1982-11-05
US4329685A (en) * 1980-06-09 1982-05-11 Burroughs Corporation Controlled selective disconnect system for wafer scale integrated circuits
US4578771A (en) * 1980-12-29 1986-03-25 International Business Machines Corporation Dynamically reprogrammable array logic system
JPS57192067A (en) * 1981-05-22 1982-11-26 Hitachi Ltd Erasable and programmable read only memory unit
US4431928A (en) * 1981-06-22 1984-02-14 Hewlett-Packard Company Symmetrical programmable logic array
US4661922A (en) * 1982-12-08 1987-04-28 American Telephone And Telegraph Company Programmed logic array with two-level control timing
US4791603A (en) * 1986-07-18 1988-12-13 Honeywell Inc. Dynamically reconfigurable array logic
US5680518A (en) * 1994-08-26 1997-10-21 Hangartner; Ricky D. Probabilistic computing methods and apparatus
US6874136B2 (en) * 2002-01-10 2005-03-29 M2000 Crossbar device with reduced parasitic capacitive loading and usage of crossbar devices in reconfigurable circuits
WO2006122271A2 (en) * 2005-05-10 2006-11-16 Georgia Tech Research Corporation Systems and methods for programming floating-gate transistors
US7439764B2 (en) 2005-05-16 2008-10-21 Georgia Tech Research Corporation Systems and methods for programming large-scale field-programmable analog arrays
US8661394B1 (en) 2008-09-24 2014-02-25 Iowa State University Research Foundation, Inc. Depth-optimal mapping of logic chains in reconfigurable fabrics
US8438522B1 (en) 2008-09-24 2013-05-07 Iowa State University Research Foundation, Inc. Logic element architecture for generic logic chains in programmable devices
GB202215844D0 (en) * 2022-10-26 2022-12-07 Nicoventures Trading Ltd Computing device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623023A (en) * 1967-12-01 1971-11-23 Sperry Rand Corp Variable threshold transistor memory using pulse coincident writing
US3624618A (en) * 1967-12-14 1971-11-30 Sperry Rand Corp A high-speed memory array using variable threshold transistors
JPS4844581B1 (sv) * 1969-03-15 1973-12-25
US3686644A (en) * 1971-04-29 1972-08-22 Alton O Christensen Gated diode memory
US3728695A (en) * 1971-10-06 1973-04-17 Intel Corp Random-access floating gate mos memory array
JPS4873039A (sv) * 1971-12-20 1973-10-02
US3875567A (en) * 1971-12-29 1975-04-01 Sony Corp Memory circuit using variable threshold level field-effect device
US3818452A (en) * 1972-04-28 1974-06-18 Gen Electric Electrically programmable logic circuits
US3877054A (en) * 1973-03-01 1975-04-08 Bell Telephone Labor Inc Semiconductor memory apparatus with a multilayer insulator contacting the semiconductor

Also Published As

Publication number Publication date
FR2362443B1 (sv) 1982-12-17
GB1536374A (en) 1978-12-20
JPS5323531A (en) 1978-03-04
CA1073057A (en) 1980-03-04
DE2735976A1 (de) 1978-02-23
SE414569B (sv) 1980-08-04
DE2735976C3 (de) 1981-12-03
FR2362443A1 (fr) 1978-03-17
BE857711A (fr) 1977-12-01
SE7709146L (sv) 1978-02-17
DE2735976B2 (de) 1981-01-08
IT1083910B (it) 1985-05-25
US4056807A (en) 1977-11-01
NL7708974A (nl) 1978-02-20
ES461619A1 (es) 1978-07-01

Similar Documents

Publication Publication Date Title
DE3123611C2 (sv)
DE1817510C3 (de) Monolithischer Halbleiterspeicher mit Speicherzellen aus Transistoren
CH621657A5 (sv)
DE3148806C2 (sv)
DE10032271C2 (de) MRAM-Anordnung
DE2154024A1 (de) Binäres Speicherelement aus einer Flip-Flop Schaltung
DE2930424B2 (de) Schaltung zum Bestimmen, ob eine Spannung einen hohen oder einen niedrigen Pegel hat
DE2332643C2 (de) Datenspeichervorrichtung
DE2712537A1 (de) Speicherwerk
DE1474457B2 (de) Speicher mit mindestens einem binaerspeicherelement in form einer bistabilen schaltung
DE2514582C2 (de) Schaltung zur erzeugung von leseimpulsen
DE2161978C2 (sv)
EP0100772B1 (de) Elektrisch programmierbare Speichermatrix
DE2041959A1 (de) Randomspeicher
DE2314015A1 (de) Signalverstaerker
DE2049076A1 (de) Kreuzpunkt Matnxgedachtnis
DE2152109A1 (de) Speicher mit Feldeffekt-Halbleiterelementen
DE2946633C2 (sv)
DE1499853A1 (de) Cryoelektrischer Speicher
DE2251640A1 (de) Elektronisches speicherelement und dieses verwendendes speicherwerk
DE1284521B (de) Schaltungsanordnung mit einem mehremitter-transistor
DE2348984A1 (de) Anordnung mit feldeffekttransistoren
DE3634332C2 (sv)
DE1474457C (de) Speicher mit mindestens einem Binärspeicherelement in Form einer bistabilen Schaltung
DE1499857C (de) Lese Treiber Schaltung für einen Datenspeicher

Legal Events

Date Code Title Description
PL Patent ceased