JPS5619651A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS5619651A
JPS5619651A JP9560279A JP9560279A JPS5619651A JP S5619651 A JPS5619651 A JP S5619651A JP 9560279 A JP9560279 A JP 9560279A JP 9560279 A JP9560279 A JP 9560279A JP S5619651 A JPS5619651 A JP S5619651A
Authority
JP
Japan
Prior art keywords
amplifier
current
read
word line
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9560279A
Other languages
Japanese (ja)
Other versions
JPH0145159B2 (en
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9560279A priority Critical patent/JPS5619651A/en
Publication of JPS5619651A publication Critical patent/JPS5619651A/en
Publication of JPH0145159B2 publication Critical patent/JPH0145159B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/067—Single-ended amplifiers

Landscapes

  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To eliminate the generation of noise from an amplifier by a method wherein a gate circuit is provided between a memory cell array and an amplifier and have the array and the amplifier under connected condition by giving ''ON'' position to the circuit at the time of read-out only. CONSTITUTION:Word lines W1 and W2, etc. are crossed with bit lines B1 and B2, etc. and they are connected by transistors Q11, Q12, Q21 and Q22. Also, the current amplifier Am, which also works as the sense amplifier and provided in the memory cell array, is connected to the end section of the word line. Circuits are constituted as above, a read-out current is applied to the word line W1, etc., the current running on the bit line B1 for which the selected transistor Q11 is connected is amplified by the amplifier Am and it is led out as a current, and then a gate circuit G, which gives ''ON'' position between the array and the amplifier Am at the time of read-out only, is provided. As a result, no noise is sensed when a high voltage is applied for a charge pumping, etc. of the word line.
JP9560279A 1979-07-26 1979-07-26 Semiconductor ic device Granted JPS5619651A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9560279A JPS5619651A (en) 1979-07-26 1979-07-26 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9560279A JPS5619651A (en) 1979-07-26 1979-07-26 Semiconductor ic device

Publications (2)

Publication Number Publication Date
JPS5619651A true JPS5619651A (en) 1981-02-24
JPH0145159B2 JPH0145159B2 (en) 1989-10-02

Family

ID=14142092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9560279A Granted JPS5619651A (en) 1979-07-26 1979-07-26 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS5619651A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323531A (en) * 1976-08-16 1978-03-04 Western Electric Co Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5323531A (en) * 1976-08-16 1978-03-04 Western Electric Co Semiconductor device

Also Published As

Publication number Publication date
JPH0145159B2 (en) 1989-10-02

Similar Documents

Publication Publication Date Title
EP0125699A3 (en) Data output circuit for dynamic memory device
JPS57127989A (en) Mos static type ram
KR930001226A (en) Sense Amplifiers Perform High-Speed Sensing Operations
JPS57130298A (en) Semiconductor integrated circuit memory and relieving method for its fault
EP0199501A3 (en) Cmos current sense amplifiers
JPS56165982A (en) Static type memory circuit
JPS5661088A (en) Semiconductor memory device
JPS5457921A (en) Sense amplifier circuit
JPS57113482A (en) Semiconductor storage device
JPS5661085A (en) Semiconductor memory device
JPS5619651A (en) Semiconductor ic device
EP0329182A3 (en) Decoder buffer circuit incorporated in semiconductor memory device
IE53368B1 (en) Mos dynamic memory device
DE59407879D1 (en) Integrated semiconductor memory circuit and method for its operation
JPS6488998A (en) Nonvolatile semiconductor memory
JPS645072A (en) Nonvolatile semiconductor memory device
JPS6476495A (en) Semiconductor memory device
KR870007517A (en) Semiconductor memory
JPS57130293A (en) Semiconductor boosting circuit
JPS57176590A (en) Memory device
DE59407878D1 (en) Integrated semiconductor memory circuit and method for its operation
KR880003334A (en) Static semiconductor memory device
KR930005779Y1 (en) Semiconductor memory element
JPS6421794A (en) Decoder circuit for semiconductor storage device
JPS586591A (en) Semiconductor storage circuit for read only memory