CH496473A - Verfahren zur Züchtung von dotierten Kristallen - Google Patents
Verfahren zur Züchtung von dotierten KristallenInfo
- Publication number
- CH496473A CH496473A CH1351866A CH1351866A CH496473A CH 496473 A CH496473 A CH 496473A CH 1351866 A CH1351866 A CH 1351866A CH 1351866 A CH1351866 A CH 1351866A CH 496473 A CH496473 A CH 496473A
- Authority
- CH
- Switzerland
- Prior art keywords
- crystal
- melt
- molecular
- chromium
- growing
- Prior art date
Links
- 239000013078 crystal Substances 0.000 title claims description 52
- 238000000034 method Methods 0.000 title claims description 32
- 239000000155 melt Substances 0.000 claims description 26
- 238000009826 distribution Methods 0.000 claims description 24
- 239000002019 doping agent Substances 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 19
- 239000011651 chromium Substances 0.000 claims description 16
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 claims description 16
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 15
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- PBYZMCDFOULPGH-UHFFFAOYSA-N tungstate Chemical compound [O-][W]([O-])(=O)=O PBYZMCDFOULPGH-UHFFFAOYSA-N 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052744 lithium Inorganic materials 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 230000003993 interaction Effects 0.000 claims description 3
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 230000001419 dependent effect Effects 0.000 claims 5
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- XYLGPCWDPLOBGP-UHFFFAOYSA-N chlorine nitrate Chemical compound ClON(=O)=O XYLGPCWDPLOBGP-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/32—Titanates; Germanates; Molybdates; Tungstates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB40558/65A GB1126615A (en) | 1965-09-23 | 1965-09-23 | Improvements in and relating to crystal growing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH496473A true CH496473A (de) | 1970-09-30 |
Family
ID=10415493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1351866A CH496473A (de) | 1965-09-23 | 1966-09-20 | Verfahren zur Züchtung von dotierten Kristallen |
Country Status (5)
| Country | Link |
|---|---|
| BE (1) | BE687262A (enrdf_load_stackoverflow) |
| CH (1) | CH496473A (enrdf_load_stackoverflow) |
| DE (1) | DE1544239A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1126615A (enrdf_load_stackoverflow) |
| NL (1) | NL6613223A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0795631A1 (en) * | 1996-02-23 | 1997-09-17 | Saint-Gobain/Norton Industrial Ceramics Corporation | Scintillation crystals having reduced afterglow and method of making the same |
-
1965
- 1965-09-23 GB GB40558/65A patent/GB1126615A/en not_active Expired
-
1966
- 1966-09-20 CH CH1351866A patent/CH496473A/de not_active IP Right Cessation
- 1966-09-20 NL NL6613223A patent/NL6613223A/xx unknown
- 1966-09-22 DE DE19661544239 patent/DE1544239A1/de active Pending
- 1966-09-22 BE BE687262D patent/BE687262A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE687262A (enrdf_load_stackoverflow) | 1967-03-22 |
| DE1544239A1 (de) | 1970-04-09 |
| NL6613223A (enrdf_load_stackoverflow) | 1967-03-28 |
| GB1126615A (en) | 1968-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |