GB1126615A - Improvements in and relating to crystal growing - Google Patents

Improvements in and relating to crystal growing

Info

Publication number
GB1126615A
GB1126615A GB40558/65A GB4055865A GB1126615A GB 1126615 A GB1126615 A GB 1126615A GB 40558/65 A GB40558/65 A GB 40558/65A GB 4055865 A GB4055865 A GB 4055865A GB 1126615 A GB1126615 A GB 1126615A
Authority
GB
United Kingdom
Prior art keywords
impurity
melt
maintained
distribution coefficient
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB40558/65A
Inventor
John Chadwick Brice
Peter Arthur Charles Whiffin
Peter William Whipps
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB40558/65A priority Critical patent/GB1126615A/en
Priority to CH1351866A priority patent/CH496473A/en
Priority to NL6613223A priority patent/NL6613223A/xx
Priority to DE19661544239 priority patent/DE1544239A1/en
Priority to FR77297A priority patent/FR1494447A/en
Priority to BE687262D priority patent/BE687262A/xx
Publication of GB1126615A publication Critical patent/GB1126615A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/32—Titanates; Germanates; Molybdates; Tungstates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,126,615. Doped zinc tungstate crystals. MULLARD Ltd. 23 Sept., 1965, No. 40558/65. Heading C1A. Zinc tungstate crystals doped with at least two impurity ions are grown from a melt of component oxides in which the distribution of impurities in the grown crystal is determined by the presence in the melt of an excess of one of the major components, two of the impurities are such that there is a positive interaction between them, this means that an increase in the amount of one impurity in the oxide melt causes the distribution coefficient of the other impurity to increase, where distribution coefficient is defined as the ratio between the concentration of an impurity in the solid state and the concentration of the impurity in the melt. Preferably the distribution coefficient of one impurity is maintained greater than 1 and that of the other impurity is maintained less than 1 but preferred respective values are given as between 0À5 and 2À0 and less than 0À1. These values of distribution coefficient are preferably maintained by the presence of an excess amount of tungstic oxide. The specified impurities are chromium and lithium, the chromium may be added initially as chromium nitrate which decomposes under the melt conditions to the corresponding oxide; the lithium may be added to the melt as lithium tungstate. The distribution coefficient of the chromium may be maintained at a value substantially equal to unity by the presence of an excess of zinc oxide. The desired values of the distribution coefficients of the impurities may be adjusted and maintained before starting to grow the crystals and also said values may be adjusted and maintained during growth if desired.
GB40558/65A 1965-09-23 1965-09-23 Improvements in and relating to crystal growing Expired GB1126615A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB40558/65A GB1126615A (en) 1965-09-23 1965-09-23 Improvements in and relating to crystal growing
CH1351866A CH496473A (en) 1965-09-23 1966-09-20 Method for growing doped crystals
NL6613223A NL6613223A (en) 1965-09-23 1966-09-20
DE19661544239 DE1544239A1 (en) 1965-09-23 1966-09-22 Method for breeding doped crystals
FR77297A FR1494447A (en) 1965-09-23 1966-09-22 Process for manufacturing a single crystal of a compound
BE687262D BE687262A (en) 1965-09-23 1966-09-22

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB40558/65A GB1126615A (en) 1965-09-23 1965-09-23 Improvements in and relating to crystal growing

Publications (1)

Publication Number Publication Date
GB1126615A true GB1126615A (en) 1968-09-11

Family

ID=10415493

Family Applications (1)

Application Number Title Priority Date Filing Date
GB40558/65A Expired GB1126615A (en) 1965-09-23 1965-09-23 Improvements in and relating to crystal growing

Country Status (5)

Country Link
BE (1) BE687262A (en)
CH (1) CH496473A (en)
DE (1) DE1544239A1 (en)
GB (1) GB1126615A (en)
NL (1) NL6613223A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0795631A1 (en) * 1996-02-23 1997-09-17 Saint-Gobain/Norton Industrial Ceramics Corporation Scintillation crystals having reduced afterglow and method of making the same

Also Published As

Publication number Publication date
DE1544239A1 (en) 1970-04-09
CH496473A (en) 1970-09-30
BE687262A (en) 1967-03-22
NL6613223A (en) 1967-03-28

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