CA2465363A1 - Electrolytic copper plating solutions - Google Patents

Electrolytic copper plating solutions Download PDF

Info

Publication number
CA2465363A1
CA2465363A1 CA002465363A CA2465363A CA2465363A1 CA 2465363 A1 CA2465363 A1 CA 2465363A1 CA 002465363 A CA002465363 A CA 002465363A CA 2465363 A CA2465363 A CA 2465363A CA 2465363 A1 CA2465363 A1 CA 2465363A1
Authority
CA
Canada
Prior art keywords
acid
copper
solution
substrate
vias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002465363A
Other languages
English (en)
French (fr)
Inventor
Nicholas Michael Martyak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2465363A1 publication Critical patent/CA2465363A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • H10P14/47—Electrolytic deposition, i.e. electroplating; Electroless plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
CA002465363A 2002-08-16 2003-08-08 Electrolytic copper plating solutions Abandoned CA2465363A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40395402P 2002-08-16 2002-08-16
US60/403,954 2002-08-16
US10/620,042 US20040045832A1 (en) 1999-10-14 2003-07-15 Electrolytic copper plating solutions
US10/620,042 2003-07-15
PCT/US2003/024747 WO2004016829A2 (en) 2002-08-16 2003-08-08 Electrolytic copper plating solutions

Publications (1)

Publication Number Publication Date
CA2465363A1 true CA2465363A1 (en) 2004-02-26

Family

ID=31891409

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002465363A Abandoned CA2465363A1 (en) 2002-08-16 2003-08-08 Electrolytic copper plating solutions

Country Status (8)

Country Link
US (1) US20040045832A1 (https=)
EP (1) EP1529126A4 (https=)
JP (1) JP2005535787A (https=)
CN (1) CN1592800A (https=)
AU (1) AU2003259049A1 (https=)
CA (1) CA2465363A1 (https=)
TW (1) TWI285687B (https=)
WO (1) WO2004016829A2 (https=)

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CN104195602A (zh) * 2009-04-07 2014-12-10 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
WO2018095132A1 (en) * 2016-11-23 2018-05-31 Suzhou Shinhao Materials Llc Copper crystal particles having highly preferred orientation and preparation method thereof

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JP4238051B2 (ja) * 2003-03-11 2009-03-11 日本ペイント株式会社 カチオン電着塗料組成物及びカチオン電着塗料組成物の安定化方法
JP2005272874A (ja) * 2004-03-23 2005-10-06 Sumitomo Bakelite Co Ltd 回路基板の製造方法
TWI400365B (zh) 2004-11-12 2013-07-01 安頌股份有限公司 微電子裝置上的銅電沈積
JP4704761B2 (ja) * 2005-01-19 2011-06-22 石原薬品株式会社 電気銅メッキ浴、並びに銅メッキ方法
US20060231409A1 (en) * 2005-03-31 2006-10-19 Tdk Corporation Plating solution, conductive material, and surface treatment method of conductive material
JP4764718B2 (ja) * 2005-12-28 2011-09-07 新光電気工業株式会社 スルーホールの充填方法
US7575666B2 (en) * 2006-04-05 2009-08-18 James Watkowski Process for electrolytically plating copper
US20080110759A1 (en) * 2006-11-14 2008-05-15 Tower Semiconductor Ltd. Self Terminating Overburden Free Plating (STOP) Of Metals On Patterned Wafers
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (ja) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc 銅めっき方法
DE502008000573D1 (de) * 2008-02-29 2010-06-02 Atotech Deutschland Gmbh Pyrophosphat-basiertes Bad zur Abscheidung von Zinn-Legierungsschichten
WO2011149965A2 (en) 2010-05-24 2011-12-01 Enthone Inc. Copper filling of through silicon vias
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
WO2010115796A1 (en) 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US20100320081A1 (en) * 2009-06-17 2010-12-23 Mayer Steven T Apparatus for wetting pretreatment for enhanced damascene metal filling
TWI465609B (zh) * 2009-07-07 2014-12-21 Furukawa Electric Co Ltd An electrolytic copper film, a method for producing the same, and a copper electrolytic solution for manufacturing a copper electrolytic film
US20120175744A1 (en) * 2009-09-28 2012-07-12 Basf Se Copper electroplating composition
WO2011102276A1 (ja) * 2010-02-22 2011-08-25 Jx日鉱日石金属株式会社 高純度スルホン酸銅水溶液及びその製造方法
KR101705734B1 (ko) * 2011-02-18 2017-02-14 삼성전자주식회사 구리 도금 용액 및 이것을 이용한 구리 도금 방법
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
CN103547631B (zh) 2011-06-01 2016-07-06 巴斯夫欧洲公司 包含用于自下向上填充硅穿孔和互联件特征的添加剂的金属电镀用组合物
CN103361694A (zh) * 2013-08-08 2013-10-23 上海新阳半导体材料股份有限公司 一种用于3d铜互连高深宽比硅通孔技术微孔电镀填铜方法
CN104762643A (zh) * 2014-12-17 2015-07-08 安捷利电子科技（苏州）有限公司 一种通孔、盲孔和线路共镀的镀铜药水
CN107532324A (zh) * 2015-04-27 2018-01-02 株式会社杰希优 硫酸铜镀液的管理方法
CN108174615B (zh) 2015-09-29 2023-02-17 大日本印刷株式会社 布线构造体制造方法、图案构造体形成方法及压印用模具
JP2017222903A (ja) * 2016-06-15 2017-12-21 公立大学法人大阪府立大学 ハロゲンフリーまたは低ハロゲン電解穴埋め銅めっき浴
JP7039601B2 (ja) * 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド マイクロエレクトロニクスにおける銅電着
TWI647342B (zh) * 2017-08-03 2019-01-11 國家中山科學研究院 Copper-silver two-component metal plating liquid for semiconductor wires and plating method
US11387108B2 (en) * 2017-09-04 2022-07-12 Basf Se Composition for metal electroplating comprising leveling agent
CN108914171B (zh) * 2018-07-19 2020-05-19 广东工业大学 一种加速铜沉积添加剂及其制备方法和应用
CN110983389B (zh) * 2019-12-31 2020-11-13 广州三孚新材料科技股份有限公司 一种钢铁件无氰碱性电镀铜液及其制备方法
CN113279026B (zh) * 2021-04-25 2022-09-02 厦门理工学院 一种用于铜箔盲孔填孔的药水
CN116856022B (zh) * 2023-07-05 2024-02-20 诺博环保科技(中山)有限公司 一种电镀用合金添加剂及其制备方法

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US2252942A (en) * 1938-07-01 1941-08-19 Clyde M Mourer Metal spray gun
US2525943A (en) * 1947-09-24 1950-10-17 Standard Oil Co Copper plating bath and process
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
DE2204326C3 (de) * 1972-01-26 1981-07-09 Schering Ag Berlin Und Bergkamen, 1000 Berlin Wäßriges saures Bad zur galvanischen Abscheidung von glänzenden und duktilen Kupferüberzügen
US3956084A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4374709A (en) * 1980-05-01 1983-02-22 Occidental Chemical Corporation Process for plating polymeric substrates
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
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US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5068013A (en) * 1988-08-23 1991-11-26 Shipley Company Inc. Electroplating composition and process
US5174886A (en) * 1991-02-22 1992-12-29 Mcgean-Rohco, Inc. High-throw acid copper plating using inert electrolyte
US5385661A (en) * 1993-09-17 1995-01-31 International Business Machines Corporation Acid electrolyte solution and process for the electrodeposition of copper-rich alloys exploiting the phenomenon of underpotential deposition
DE4338148C2 (de) * 1993-11-04 1997-01-30 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung matter und pickelfreier Kupferschichten mit hoher Bruchdehnung auf Substratoberflächen
DE19545231A1 (de) * 1995-11-21 1997-05-22 Atotech Deutschland Gmbh Verfahren zur elektrolytischen Abscheidung von Metallschichten
JPH10310881A (ja) * 1997-05-12 1998-11-24 Toppan Printing Co Ltd 銅系金属材料のエッチング方法
US6270601B1 (en) * 1998-11-02 2001-08-07 Coorstek, Inc. Method for producing filled vias in electronic components
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104195602A (zh) * 2009-04-07 2014-12-10 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
CN104195602B (zh) * 2009-04-07 2017-05-31 巴斯夫欧洲公司 包含抑制剂的无空隙亚微米结构填充用金属电镀组合物
WO2018095132A1 (en) * 2016-11-23 2018-05-31 Suzhou Shinhao Materials Llc Copper crystal particles having highly preferred orientation and preparation method thereof
US10604857B2 (en) 2016-11-23 2020-03-31 Suzhou Shinhao Materials Llc Copper crystal particles having a highly preferred orientation and a preparation method thereof

Also Published As

Publication number Publication date
EP1529126A2 (en) 2005-05-11
EP1529126A4 (en) 2006-07-05
JP2005535787A (ja) 2005-11-24
TW200415263A (en) 2004-08-16
AU2003259049A8 (en) 2004-03-03
WO2004016829A2 (en) 2004-02-26
US20040045832A1 (en) 2004-03-11
WO2004016829A3 (en) 2004-04-29
CN1592800A (zh) 2005-03-09
AU2003259049A1 (en) 2004-03-03
TWI285687B (en) 2007-08-21

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Legal Events

Date Code Title Description
FZDE Discontinued