AU2003259049A8 - Electrolytic copper plating solutions - Google Patents

Electrolytic copper plating solutions

Info

Publication number
AU2003259049A8
AU2003259049A8 AU2003259049A AU2003259049A AU2003259049A8 AU 2003259049 A8 AU2003259049 A8 AU 2003259049A8 AU 2003259049 A AU2003259049 A AU 2003259049A AU 2003259049 A AU2003259049 A AU 2003259049A AU 2003259049 A8 AU2003259049 A8 AU 2003259049A8
Authority
AU
Australia
Prior art keywords
copper plating
electrolytic copper
plating solutions
solutions
electrolytic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003259049A
Other versions
AU2003259049A1 (en
Inventor
Nicholas Michael Martyak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arkema Inc
Original Assignee
Atofina Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atofina Chemicals Inc filed Critical Atofina Chemicals Inc
Publication of AU2003259049A1 publication Critical patent/AU2003259049A1/en
Publication of AU2003259049A8 publication Critical patent/AU2003259049A8/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method
AU2003259049A 2002-08-16 2003-08-08 Electrolytic copper plating solutions Abandoned AU2003259049A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US40395402P 2002-08-16 2002-08-16
US60/403,954 2002-08-16
US10/620,042 2003-07-15
US10/620,042 US20040045832A1 (en) 1999-10-14 2003-07-15 Electrolytic copper plating solutions
PCT/US2003/024747 WO2004016829A2 (en) 2002-08-16 2003-08-08 Electrolytic copper plating solutions

Publications (2)

Publication Number Publication Date
AU2003259049A1 AU2003259049A1 (en) 2004-03-03
AU2003259049A8 true AU2003259049A8 (en) 2004-03-03

Family

ID=31891409

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003259049A Abandoned AU2003259049A1 (en) 2002-08-16 2003-08-08 Electrolytic copper plating solutions

Country Status (8)

Country Link
US (1) US20040045832A1 (en)
EP (1) EP1529126A4 (en)
JP (1) JP2005535787A (en)
CN (1) CN1592800A (en)
AU (1) AU2003259049A1 (en)
CA (1) CA2465363A1 (en)
TW (1) TWI285687B (en)
WO (1) WO2004016829A2 (en)

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DE10311575B4 (en) * 2003-03-10 2007-03-22 Atotech Deutschland Gmbh Process for the electrolytic metallization of workpieces with high aspect ratio holes
JP4238051B2 (en) * 2003-03-11 2009-03-11 日本ペイント株式会社 Cationic electrodeposition coating composition and method for stabilizing cationic electrodeposition coating composition
JP2005272874A (en) * 2004-03-23 2005-10-06 Sumitomo Bakelite Co Ltd Method for producing circuit board
TW200632147A (en) 2004-11-12 2006-09-16
JP4704761B2 (en) * 2005-01-19 2011-06-22 石原薬品株式会社 Electro copper plating bath and copper plating method
US20060231409A1 (en) * 2005-03-31 2006-10-19 Tdk Corporation Plating solution, conductive material, and surface treatment method of conductive material
JP4764718B2 (en) * 2005-12-28 2011-09-07 新光電気工業株式会社 Through-hole filling method
US7575666B2 (en) * 2006-04-05 2009-08-18 James Watkowski Process for electrolytically plating copper
US20080110759A1 (en) * 2006-11-14 2008-05-15 Tower Semiconductor Ltd. Self Terminating Overburden Free Plating (STOP) Of Metals On Patterned Wafers
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
JP2009041097A (en) * 2007-08-10 2009-02-26 Rohm & Haas Electronic Materials Llc Copper plating method
EP2103717B1 (en) * 2008-02-29 2010-04-21 ATOTECH Deutschland GmbH Pyrophosphate-based bath for depositing tin alloy layers
US8388824B2 (en) 2008-11-26 2013-03-05 Enthone Inc. Method and composition for electrodeposition of copper in microelectronics with dipyridyl-based levelers
WO2011149965A2 (en) 2010-05-24 2011-12-01 Enthone Inc. Copper filling of through silicon vias
US20100206737A1 (en) * 2009-02-17 2010-08-19 Preisser Robert F Process for electrodeposition of copper chip to chip, chip to wafer and wafer to wafer interconnects in through-silicon vias (tsv)
CN102365395B (en) 2009-04-07 2015-04-29 巴斯夫欧洲公司 Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN104195602B (en) * 2009-04-07 2017-05-31 巴斯夫欧洲公司 Tight submicrometer structure filling metal plating compositions comprising inhibitor
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
US8962085B2 (en) * 2009-06-17 2015-02-24 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
TWI465609B (en) * 2009-07-07 2014-12-21 Furukawa Electric Co Ltd An electrolytic copper film, a method for producing the same, and a copper electrolytic solution for manufacturing a copper electrolytic film
US20120175744A1 (en) * 2009-09-28 2012-07-12 Basf Se Copper electroplating composition
JP5384719B2 (en) * 2010-02-22 2014-01-08 Ｊｘ日鉱日石金属株式会社 High purity copper sulfonate aqueous solution and method for producing the same
KR101705734B1 (en) * 2011-02-18 2017-02-14 삼성전자주식회사 Copper electroplating solution and method of copper electroplating using the same
CN103547631B (en) 2011-06-01 2016-07-06 巴斯夫欧洲公司 Comprise the composition for metal electroplating for the perforation of bottom-up filling silicon and the additive of interconnection part feature
EP2530102A1 (en) 2011-06-01 2012-12-05 Basf Se Additive and composition for metal electroplating comprising an additive for bottom-up filling of though silicon vias
CN103361694A (en) * 2013-08-08 2013-10-23 上海新阳半导体材料股份有限公司 Micro-pore electroplated copper filling method for three-dimensional (3D) copper interconnection high aspect ratio through-silicon-via technology
CN104762643A (en) * 2014-12-17 2015-07-08 安捷利电子科技（苏州）有限公司 Copper plating solution capable of realizing co-plating of through hole, blind hole and circuit
JPWO2016174705A1 (en) * 2015-04-27 2018-02-15 株式会社Ｊｃｕ Management method of copper sulfate plating solution
CN108174615B (en) * 2015-09-29 2023-02-17 大日本印刷株式会社 Wiring structure manufacturing method, pattern structure forming method, and imprint mold
JP2017222903A (en) * 2016-06-15 2017-12-21 公立大学法人大阪府立大学 Halogen free or low halogen electrolytic hole filling copper plating bath
JP7039601B2 (en) * 2016-09-22 2022-03-22 マクダーミッド エンソン インコーポレイテッド Copper electrodeposition in microelectronics
CN106757191B (en) 2016-11-23 2019-10-01 苏州昕皓新材料科技有限公司 A kind of copper crystal particle and preparation method thereof with high preferred orientation
TWI647342B (en) * 2017-08-03 2019-01-11 國家中山科學研究院 Copper-silver two-component metal plating liquid for semiconductor wires and plating method
WO2019043146A1 (en) * 2017-09-04 2019-03-07 Basf Se Composition for metal electroplating comprising leveling agent
CN108914171B (en) * 2018-07-19 2020-05-19 广东工业大学 Additive for accelerating copper deposition and preparation method and application thereof
CN110983389B (en) * 2019-12-31 2020-11-13 广州三孚新材料科技股份有限公司 Cyanide-free alkaline copper electroplating solution for steel parts and preparation method thereof
CN113279026B (en) * 2021-04-25 2022-09-02 厦门理工学院 Liquid medicine for copper foil blind hole filling
CN116856022B (en) * 2023-07-05 2024-02-20 诺博环保科技(中山)有限公司 Alloy additive for electroplating and preparation method thereof

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US2252942A (en) * 1938-07-01 1941-08-19 Clyde M Mourer Metal spray gun
US2525943A (en) * 1947-09-24 1950-10-17 Standard Oil Co Copper plating bath and process
US3770598A (en) * 1972-01-21 1973-11-06 Oxy Metal Finishing Corp Electrodeposition of copper from acid baths
DE2204326C3 (en) * 1972-01-26 1981-07-09 Schering Ag Berlin Und Bergkamen, 1000 Berlin Aqueous acid bath for the galvanic deposition of shiny and ductile copper coatings
US3956084A (en) * 1972-12-14 1976-05-11 M & T Chemicals Inc. Electrodeposition of copper
US4374709A (en) * 1980-05-01 1983-02-22 Occidental Chemical Corporation Process for plating polymeric substrates
US4376685A (en) * 1981-06-24 1983-03-15 M&T Chemicals Inc. Acid copper electroplating baths containing brightening and leveling additives
US4555315A (en) * 1984-05-29 1985-11-26 Omi International Corporation High speed copper electroplating process and bath therefor
US4673469A (en) * 1984-06-08 1987-06-16 Mcgean-Rohco, Inc. Method of plating plastics
US4673459A (en) * 1985-06-18 1987-06-16 Kamyr, Inc. Radial configuration of evaporator heating elements and method
US5051154A (en) * 1988-08-23 1991-09-24 Shipley Company Inc. Additive for acid-copper electroplating baths to increase throwing power
US5068013A (en) * 1988-08-23 1991-11-26 Shipley Company Inc. Electroplating composition and process
US5174886A (en) * 1991-02-22 1992-12-29 Mcgean-Rohco, Inc. High-throw acid copper plating using inert electrolyte
US5385661A (en) * 1993-09-17 1995-01-31 International Business Machines Corporation Acid electrolyte solution and process for the electrodeposition of copper-rich alloys exploiting the phenomenon of underpotential deposition
DE4338148C2 (en) * 1993-11-04 1997-01-30 Atotech Deutschland Gmbh Process for the electrolytic deposition of dull and pimple-free copper layers with high elongation at break on substrate surfaces
DE19545231A1 (en) * 1995-11-21 1997-05-22 Atotech Deutschland Gmbh Process for the electrolytic deposition of metal layers
JPH10310881A (en) * 1997-05-12 1998-11-24 Toppan Printing Co Ltd Method for etching copper-base metallic material
US6270601B1 (en) * 1998-11-02 2001-08-07 Coorstek, Inc. Method for producing filled vias in electronic components
US6444110B2 (en) * 1999-05-17 2002-09-03 Shipley Company, L.L.C. Electrolytic copper plating method
US6605204B1 (en) * 1999-10-14 2003-08-12 Atofina Chemicals, Inc. Electroplating of copper from alkanesulfonate electrolytes

Also Published As

Publication number Publication date
EP1529126A4 (en) 2006-07-05
JP2005535787A (en) 2005-11-24
TW200415263A (en) 2004-08-16
AU2003259049A1 (en) 2004-03-03
WO2004016829A2 (en) 2004-02-26
CN1592800A (en) 2005-03-09
EP1529126A2 (en) 2005-05-11
WO2004016829A3 (en) 2004-04-29
TWI285687B (en) 2007-08-21
US20040045832A1 (en) 2004-03-11
CA2465363A1 (en) 2004-02-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase