CA2211705C - Diamond - Google Patents
Diamond Download PDFInfo
- Publication number
- CA2211705C CA2211705C CA002211705A CA2211705A CA2211705C CA 2211705 C CA2211705 C CA 2211705C CA 002211705 A CA002211705 A CA 002211705A CA 2211705 A CA2211705 A CA 2211705A CA 2211705 C CA2211705 C CA 2211705C
- Authority
- CA
- Canada
- Prior art keywords
- cvd diamond
- diamond layer
- layer according
- dopant atoms
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 98
- 239000010432 diamond Substances 0.000 title claims abstract description 98
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052796 boron Inorganic materials 0.000 claims abstract description 42
- 239000002019 doping agent Substances 0.000 claims abstract description 28
- 230000006911 nucleation Effects 0.000 claims abstract description 8
- 238000010899 nucleation Methods 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims description 25
- 239000013078 crystal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 150000001247 metal acetylides Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 238000003801 milling Methods 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 238000007514 turning Methods 0.000 description 7
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000011156 metal matrix composite Substances 0.000 description 4
- 238000005299 abrasion Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009408 flooring Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 230000000155 isotopic effect Effects 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002023 wood Substances 0.000 description 2
- QIJNJJZPYXGIQM-UHFFFAOYSA-N 1lambda4,2lambda4-dimolybdacyclopropa-1,2,3-triene Chemical compound [Mo]=C=[Mo] QIJNJJZPYXGIQM-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910039444 MoC Inorganic materials 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910002796 Si–Al Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010338 mechanical breakdown Methods 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000004482 other powder Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 150000003624 transition metals Chemical group 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical group [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S427/00—Coating processes
- Y10S427/103—Diamond-like carbon coating, i.e. DLC
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T407/00—Cutters, for shaping
- Y10T407/27—Cutters, for shaping comprising tool of specific chemical composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Inorganic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Cutting Tools, Boring Holders, And Turrets (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Drilling Tools (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9616043.7A GB9616043D0 (en) | 1996-07-31 | 1996-07-31 | Diamond |
| GB9616043.7 | 1996-07-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2211705A1 CA2211705A1 (en) | 1998-01-31 |
| CA2211705C true CA2211705C (en) | 2004-04-20 |
Family
ID=10797775
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002211705A Expired - Fee Related CA2211705C (en) | 1996-07-31 | 1997-07-28 | Diamond |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5981057A (enExample) |
| EP (1) | EP0822269B1 (enExample) |
| JP (2) | JP4588129B2 (enExample) |
| KR (1) | KR100497693B1 (enExample) |
| AT (1) | ATE206488T1 (enExample) |
| AU (1) | AU714582B2 (enExample) |
| CA (1) | CA2211705C (enExample) |
| DE (1) | DE69707071T2 (enExample) |
| GB (1) | GB9616043D0 (enExample) |
| TW (1) | TW378167B (enExample) |
| ZA (1) | ZA976542B (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9616043D0 (en) * | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
| DE19912721C1 (de) * | 1999-03-20 | 2000-08-10 | Simon Karl Gmbh & Co Kg | Verfahren zum Herstellen einer Fräslamelle und nach dem Verfahren hergestellte Fräslamelle |
| AU6624601A (en) * | 2000-06-15 | 2001-12-24 | De Beers Ind Diamond | Thick single crystal diamond layer method for making it and gemstones produced from the layer |
| EP1292726B8 (en) | 2000-06-15 | 2008-10-29 | Element Six (PTY) Ltd | Single crystal diamond prepared by cvd |
| US6815052B2 (en) * | 2000-12-01 | 2004-11-09 | P1 Diamond, Inc. | Filled diamond foam material and method for forming same |
| WO2003015968A1 (fr) * | 2001-08-10 | 2003-02-27 | Sumitomo Electric Industries, Ltd. | Lame jetable de tranchet frittee sous haute pression presentant un evidement ou une rainure, son mecanisme de fixation et son procede de fabrication |
| DE10153310A1 (de) * | 2001-10-29 | 2003-05-22 | Infineon Technologies Ag | Photolithographisches Strukturierungsverfahren mit einer durch ein plasmaunterstützes Abscheideeverfahren hergestellten Kohlenstoff-Hartmaskenschicht diamantartiger Härte |
| GB0130005D0 (en) * | 2001-12-14 | 2002-02-06 | Diamanx Products Ltd | Boron doped diamond |
| US6846341B2 (en) * | 2002-02-26 | 2005-01-25 | Smith International, Inc. | Method of forming cutting elements |
| EP1602478B1 (en) * | 2002-02-26 | 2009-10-14 | Smith International, Inc. | Cutting element including semiconductive polycrystalline diamond |
| JP2003321296A (ja) * | 2002-04-25 | 2003-11-11 | Shin Etsu Chem Co Ltd | ダイヤモンド膜及びその製造方法 |
| US7517588B2 (en) * | 2003-10-08 | 2009-04-14 | Frushour Robert H | High abrasion resistant polycrystalline diamond composite |
| US7595110B2 (en) * | 2003-10-08 | 2009-09-29 | Frushour Robert H | Polycrystalline diamond composite |
| JP2006152424A (ja) * | 2004-12-01 | 2006-06-15 | Osg Corp | 硬質被膜および硬質被膜被覆加工工具 |
| JP2006150572A (ja) * | 2004-12-01 | 2006-06-15 | Osg Corp | ボロンドープダイヤモンド被膜およびダイヤモンド被覆加工工具 |
| WO2007081492A2 (en) * | 2006-01-04 | 2007-07-19 | Uab Research Foundation | High growth rate methods of producing high-quality diamonds |
| US8273225B2 (en) | 2006-09-05 | 2012-09-25 | Element Six Limited | Solid electrode |
| GB0622482D0 (en) | 2006-11-10 | 2006-12-20 | Element Six Ltd | Diamond electrode |
| GB0622483D0 (en) | 2006-11-10 | 2006-12-20 | Element Six Ltd | Electrochemical apparatus having a forced flow arrangement |
| GB0716268D0 (en) * | 2007-08-21 | 2007-09-26 | Reedhycalog Uk Ltd | PDC cutter with stress diffusing structures |
| DE202007011816U1 (de) * | 2007-08-24 | 2007-12-20 | Jakob Lach Gmbh & Co. Kg | Monoblock-Planfräser |
| CN102084492B (zh) * | 2008-05-05 | 2013-09-11 | 华盛顿卡耐基研究所 | 超韧单晶掺硼金刚石 |
| JP5261690B2 (ja) * | 2008-05-20 | 2013-08-14 | 貞雄 竹内 | 高強度ダイヤモンド膜工具 |
| JP5165484B2 (ja) * | 2008-07-16 | 2013-03-21 | ユニタック株式会社 | ドリルヘッドの製作方法及びドリルヘッド |
| US8342780B2 (en) * | 2008-10-17 | 2013-01-01 | Precorp, Inc. | Shielded PCD or PCBN cutting tools |
| JP2012509831A (ja) * | 2008-11-25 | 2012-04-26 | カーネギー インスチチューション オブ ワシントン | 急速成長速度における単結晶ｃｖｄダイヤモンドの製造 |
| GB2467570B (en) * | 2009-02-09 | 2012-09-19 | Reedhycalog Uk Ltd | Cutting element |
| WO2010126997A1 (en) * | 2009-04-28 | 2010-11-04 | Diamond Innovations, Inc. | Method to attach or improve the attachment of articles |
| US8945720B2 (en) * | 2009-08-06 | 2015-02-03 | National Oilwell Varco, L.P. | Hard composite with deformable constituent and method of applying to earth-engaging tool |
| US9783885B2 (en) | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
| US10258959B2 (en) * | 2010-08-11 | 2019-04-16 | Unit Cell Diamond Llc | Methods of producing heterodiamond and apparatus therefor |
| US8919463B2 (en) | 2010-10-25 | 2014-12-30 | National Oilwell DHT, L.P. | Polycrystalline diamond cutting element |
| US8997900B2 (en) | 2010-12-15 | 2015-04-07 | National Oilwell DHT, L.P. | In-situ boron doped PDC element |
| GB201021865D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB201021853D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| JP5913362B2 (ja) | 2010-12-23 | 2016-04-27 | エレメント シックス リミテッド | 合成ダイヤモンド材料のドーピングの制御 |
| GB201021860D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for diamond synthesis |
| GB201021870D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | A microwave plasma reactor for manufacturing synthetic diamond material |
| GB201021913D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave plasma reactors and substrates for synthetic diamond manufacture |
| GB201021855D0 (en) | 2010-12-23 | 2011-02-02 | Element Six Ltd | Microwave power delivery system for plasma reactors |
| US8741010B2 (en) | 2011-04-28 | 2014-06-03 | Robert Frushour | Method for making low stress PDC |
| US8858665B2 (en) | 2011-04-28 | 2014-10-14 | Robert Frushour | Method for making fine diamond PDC |
| US8974559B2 (en) | 2011-05-12 | 2015-03-10 | Robert Frushour | PDC made with low melting point catalyst |
| US8828110B2 (en) | 2011-05-20 | 2014-09-09 | Robert Frushour | ADNR composite |
| US9061264B2 (en) | 2011-05-19 | 2015-06-23 | Robert H. Frushour | High abrasion low stress PDC |
| WO2013105348A1 (ja) * | 2012-01-10 | 2013-07-18 | 住友電工ハードメタル株式会社 | ダイヤモンド被覆工具 |
| JP2012232898A (ja) * | 2012-08-17 | 2012-11-29 | Sadao Takeuchi | 高強度ダイヤモンド膜工具 |
| JP6076775B2 (ja) * | 2013-02-27 | 2017-02-08 | 三星ダイヤモンド工業株式会社 | スクライビングホイール、ホルダーユニット、スクライブ装置及びスクライビングホイールの製造方法 |
| CN104400028A (zh) * | 2014-11-06 | 2015-03-11 | 成都迅德科技有限公司 | 一种数控设备用切削刀具 |
| CN108602699B (zh) | 2016-02-05 | 2021-04-27 | 西门子能源美国公司 | 在升高的压力下的电氧化 |
| DE102019117796A1 (de) * | 2019-07-02 | 2021-01-07 | WIKUS-Sägenfabrik Wilhelm H. Kullmann GmbH & Co. KG | Zerspanungswerkzeug mit Pufferpartikeln |
| DE102019117799B4 (de) | 2019-07-02 | 2022-10-20 | WIKUS-Sägenfabrik Wilhelm H. Kullmann GmbH & Co. KG | Zerspanungswerkzeug mit asymmetrischen Zähnen mit Schneidpartikeln |
| JP7098856B2 (ja) * | 2019-10-18 | 2022-07-12 | 住友電工ハードメタル株式会社 | ダイヤモンド被覆工具 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57195219A (en) * | 1981-05-25 | 1982-11-30 | Matsushita Electric Ind Co Ltd | Liquid crystal color display panel |
| JPS61251158A (ja) * | 1985-04-30 | 1986-11-08 | Sumitomo Electric Ind Ltd | 放熱基板 |
| US5270029A (en) * | 1987-02-24 | 1993-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Carbon substance and its manufacturing method |
| ZA888034B (en) * | 1987-12-17 | 1989-06-28 | Gen Electric | Diamond growth process |
| US5270028A (en) * | 1988-02-01 | 1993-12-14 | Sumitomo Electric Industries, Ltd. | Diamond and its preparation by chemical vapor deposition method |
| JPH02141494A (ja) * | 1988-07-30 | 1990-05-30 | Kobe Steel Ltd | ダイヤモンド気相合成装置 |
| JPH02101167A (ja) * | 1988-10-06 | 1990-04-12 | Idemitsu Petrochem Co Ltd | ダイヤモンド類被覆部材の製造方法 |
| US5133332A (en) * | 1989-06-15 | 1992-07-28 | Sumitomo Electric Industries, Ltd. | Diamond tool |
| US4961958A (en) * | 1989-06-30 | 1990-10-09 | The Regents Of The Univ. Of Calif. | Process for making diamond, and doped diamond films at low temperature |
| JP2867694B2 (ja) * | 1990-11-27 | 1999-03-08 | 住友電気工業株式会社 | 多結晶ダイヤモンド切削工具およびその製造方法 |
| EP0487292B1 (en) * | 1990-11-22 | 1996-02-14 | Sumitomo Electric Industries, Limited | Polycrystalline diamond tool and method for producing same |
| GB9100631D0 (en) * | 1991-01-11 | 1991-02-27 | De Beers Ind Diamond | Wire drawing dies |
| GB9111474D0 (en) * | 1991-05-29 | 1991-07-17 | De Beers Ind Diamond | Boron doped diamond |
| DE69219521T2 (de) * | 1991-07-15 | 1997-08-14 | Matsushita Electric Ind Co Ltd | Magnetisches Aufzeichnungsmedium, Gleitkörper und Methode zu ihrer Herstellung |
| US5234724A (en) * | 1991-08-08 | 1993-08-10 | Schmidt Instruments, Inc. | Low energy ion doping of growing diamond by cvd |
| JPH0679504A (ja) * | 1992-08-31 | 1994-03-22 | Sumitomo Electric Ind Ltd | 多結晶ダイヤモンド切削工具およびその製造方法 |
| JP3121102B2 (ja) * | 1992-03-26 | 2000-12-25 | キヤノン株式会社 | 平板ダイヤモンド結晶、及びその形成方法 |
| JPH05299355A (ja) * | 1992-04-16 | 1993-11-12 | Kobe Steel Ltd | ホウ素ドープダイヤモンド膜の製造方法 |
| US5370299A (en) * | 1992-04-23 | 1994-12-06 | Sumitomo Electric Industries, Ltd. | Bonding tool having diamond head and method of manufacturing the same |
| US5474816A (en) * | 1993-04-16 | 1995-12-12 | The Regents Of The University Of California | Fabrication of amorphous diamond films |
| DE69507607T2 (de) * | 1994-04-06 | 1999-09-02 | The Regents Of The University Of California | Verfahren zum herstellen von diamantfilmen |
| FR2727433B1 (fr) * | 1994-11-30 | 1997-01-03 | Kodak Pathe | Procede pour la fabrication de couches de diamant dope au bore |
| US5635258A (en) * | 1995-04-03 | 1997-06-03 | National Science Council | Method of forming a boron-doped diamond film by chemical vapor deposition |
| GB9616043D0 (en) * | 1996-07-31 | 1996-09-11 | De Beers Ind Diamond | Diamond |
-
1996
- 1996-07-31 GB GBGB9616043.7A patent/GB9616043D0/en active Pending
-
1997
- 1997-07-23 ZA ZA9706542A patent/ZA976542B/xx unknown
- 1997-07-23 AU AU29430/97A patent/AU714582B2/en not_active Ceased
- 1997-07-24 US US08/899,602 patent/US5981057A/en not_active Expired - Lifetime
- 1997-07-28 CA CA002211705A patent/CA2211705C/en not_active Expired - Fee Related
- 1997-07-30 EP EP97305716A patent/EP0822269B1/en not_active Expired - Lifetime
- 1997-07-30 DE DE69707071T patent/DE69707071T2/de not_active Expired - Lifetime
- 1997-07-30 AT AT97305716T patent/ATE206488T1/de not_active IP Right Cessation
- 1997-07-30 KR KR1019970036048A patent/KR100497693B1/ko not_active Expired - Lifetime
- 1997-07-31 JP JP20639797A patent/JP4588129B2/ja not_active Expired - Lifetime
- 1997-09-17 TW TW086110708A patent/TW378167B/zh not_active IP Right Cessation
-
2008
- 2008-09-18 JP JP2008239523A patent/JP2009039856A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009039856A (ja) | 2009-02-26 |
| EP0822269B1 (en) | 2001-10-04 |
| JP4588129B2 (ja) | 2010-11-24 |
| DE69707071T2 (de) | 2002-03-07 |
| KR980009531A (ko) | 1998-04-30 |
| AU714582B2 (en) | 2000-01-06 |
| JPH10146703A (ja) | 1998-06-02 |
| EP0822269A1 (en) | 1998-02-04 |
| CA2211705A1 (en) | 1998-01-31 |
| ATE206488T1 (de) | 2001-10-15 |
| US5981057A (en) | 1999-11-09 |
| AU2943097A (en) | 1998-02-05 |
| TW378167B (en) | 2000-01-01 |
| KR100497693B1 (ko) | 2005-09-08 |
| ZA976542B (en) | 1998-04-01 |
| GB9616043D0 (en) | 1996-09-11 |
| DE69707071D1 (de) | 2001-11-08 |
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| EEER | Examination request | ||
| MKLA | Lapsed |