CA2160394C - Method of making an organic thin film transistor, and article made by the method - Google Patents
Method of making an organic thin film transistor, and article made by the methodInfo
- Publication number
- CA2160394C CA2160394C CA002160394A CA2160394A CA2160394C CA 2160394 C CA2160394 C CA 2160394C CA 002160394 A CA002160394 A CA 002160394A CA 2160394 A CA2160394 A CA 2160394A CA 2160394 C CA2160394 C CA 2160394C
- Authority
- CA
- Canada
- Prior art keywords
- layer
- alpha
- organic semiconductor
- semiconductor material
- organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title abstract description 18
- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229910052736 halogen Inorganic materials 0.000 claims description 6
- 150000002367 halogens Chemical class 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000015654 memory Effects 0.000 abstract 1
- 238000004151 rapid thermal annealing Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 35
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 238000009835 boiling Methods 0.000 description 7
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KXSFECAJUBPPFE-UHFFFAOYSA-N 2,2':5',2''-terthiophene Chemical group C1=CSC(C=2SC(=CC=2)C=2SC=CC=2)=C1 KXSFECAJUBPPFE-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 4
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000012265 solid product Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- YFONKFDEZLYQDH-OPQQBVKSSA-N N-[(1R,2S)-2,6-dimethyindan-1-yl]-6-[(1R)-1-fluoroethyl]-1,3,5-triazine-2,4-diamine Chemical compound C[C@@H](F)C1=NC(N)=NC(N[C@H]2C3=CC(C)=CC=C3C[C@@H]2C)=N1 YFONKFDEZLYQDH-OPQQBVKSSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000113 differential scanning calorimetry Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012442 inert solvent Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 125000001544 thienyl group Chemical group 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- CDVAIHNNWWJFJW-UHFFFAOYSA-N 3,5-diethoxycarbonyl-1,4-dihydrocollidine Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1C CDVAIHNNWWJFJW-UHFFFAOYSA-N 0.000 description 1
- 101100009758 Acinetobacter calcoaceticus (strain PHEA-2) mphP gene Proteins 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- -1 a-5T Chemical class 0.000 description 1
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000002322 conducting polymer Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- AASUFOVSZUIILF-UHFFFAOYSA-N diphenylmethanone;sodium Chemical compound [Na].C=1C=CC=CC=1C(=O)C1=CC=CC=C1 AASUFOVSZUIILF-UHFFFAOYSA-N 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 210000003608 fece Anatomy 0.000 description 1
- 239000000706 filtrate Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000967 suction filtration Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 125000005556 thienylene group Chemical group 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 125000004044 trifluoroacetyl group Chemical group FC(C(=O)*)(F)F 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
- Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US353,032 | 1994-12-09 | ||
| US08/353,032 US5574291A (en) | 1994-12-09 | 1994-12-09 | Article comprising a thin film transistor with low conductivity organic layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CA2160394A1 CA2160394A1 (en) | 1996-06-10 |
| CA2160394C true CA2160394C (en) | 1999-04-13 |
Family
ID=23387469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002160394A Expired - Lifetime CA2160394C (en) | 1994-12-09 | 1995-10-12 | Method of making an organic thin film transistor, and article made by the method |
Country Status (8)
Families Citing this family (121)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5663077A (en) | 1993-07-27 | 1997-09-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films |
| US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
| US7167155B1 (en) | 1995-07-20 | 2007-01-23 | E Ink Corporation | Color electrophoretic displays |
| US6107117A (en) * | 1996-12-20 | 2000-08-22 | Lucent Technologies Inc. | Method of making an organic thin film transistor |
| US6194167B1 (en) * | 1997-02-18 | 2001-02-27 | Washington State University Research Foundation | ω-3 fatty acid desaturase |
| US5796121A (en) * | 1997-03-25 | 1998-08-18 | International Business Machines Corporation | Thin film transistors fabricated on plastic substrates |
| US6839158B2 (en) | 1997-08-28 | 2005-01-04 | E Ink Corporation | Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same |
| US7242513B2 (en) | 1997-08-28 | 2007-07-10 | E Ink Corporation | Encapsulated electrophoretic displays having a monolayer of capsules and materials and methods for making the same |
| US5936259A (en) * | 1997-10-16 | 1999-08-10 | Lucent Technologies Inc. | Thin film transistor and organic semiconductor material thereof |
| US6704133B2 (en) | 1998-03-18 | 2004-03-09 | E-Ink Corporation | Electro-optic display overlays and systems for addressing such displays |
| US7075502B1 (en) | 1998-04-10 | 2006-07-11 | E Ink Corporation | Full color reflective display with multichromatic sub-pixels |
| WO1999053371A1 (en) * | 1998-04-10 | 1999-10-21 | E-Ink Corporation | Electronic displays using organic-based field effect transistors |
| US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
| US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
| US6842657B1 (en) | 1999-04-09 | 2005-01-11 | E Ink Corporation | Reactive formation of dielectric layers and protection of organic layers in organic semiconductor device fabrication |
| US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
| US6736985B1 (en) * | 1999-05-05 | 2004-05-18 | Agere Systems Inc. | High-resolution method for patterning a substrate with micro-printing |
| WO2001017029A1 (en) | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
| AU7094400A (en) | 1999-08-31 | 2001-03-26 | E-Ink Corporation | A solvent annealing process for forming a thin semiconductor film with advantageous properties |
| US6593690B1 (en) * | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
| US6611096B1 (en) | 1999-09-03 | 2003-08-26 | 3M Innovative Properties Company | Organic electronic devices having conducting self-doped polymer buffer layers |
| DE10034873B4 (de) * | 2000-07-18 | 2005-10-13 | Pacifica Group Technologies Pty Ltd | Verfahren und Bremsanlage zum Regeln des Bremsvorgangs bei einem Kraftfahrzeug |
| EP1309994A2 (de) * | 2000-08-18 | 2003-05-14 | Siemens Aktiengesellschaft | Verkapseltes organisch-elektronisches bauteil, verfahren zu seiner herstellung und seine verwendung |
| WO2002015293A2 (de) * | 2000-08-18 | 2002-02-21 | Siemens Aktiengesellschaft | Organischer feldeffekt-transistor (ofet), herstellungsverfahren dazu und daraus gebaute integrierte schaltung sowie verwendungen |
| DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
| DE10044842A1 (de) * | 2000-09-11 | 2002-04-04 | Siemens Ag | Organischer Gleichrichter, Schaltung, RFID-Tag und Verwendung eines organischen Gleichrichters |
| DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
| JP2004512675A (ja) * | 2000-09-22 | 2004-04-22 | シーメンス アクチエンゲゼルシヤフト | 有機デバイスのための電極及び／又は導体路、及びその製造方法 |
| DE10061299A1 (de) * | 2000-12-08 | 2002-06-27 | Siemens Ag | Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu |
| DE10061297C2 (de) * | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
| DE10063721A1 (de) * | 2000-12-20 | 2002-07-11 | Merck Patent Gmbh | Organischer Halbleiter, Herstellungsverfahren dazu und Verwendungen |
| DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
| WO2002078052A2 (de) * | 2001-03-26 | 2002-10-03 | Siemens Aktiengesellschaft | Gerät mit zumindest zwei organischen elektronischen bauteilen und verfahren zur herstellung dazu |
| DE10126860C2 (de) * | 2001-06-01 | 2003-05-28 | Siemens Ag | Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen |
| JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| JP2005505142A (ja) * | 2001-10-01 | 2005-02-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 電子デバイス及び構成並びに方法 |
| JP3856202B2 (ja) | 2001-10-05 | 2006-12-13 | 日本電気株式会社 | 有機薄膜トランジスタ |
| DE10151036A1 (de) * | 2001-10-16 | 2003-05-08 | Siemens Ag | Isolator für ein organisches Elektronikbauteil |
| DE10151440C1 (de) * | 2001-10-18 | 2003-02-06 | Siemens Ag | Organisches Elektronikbauteil, Verfahren zu seiner Herstellung und seine Verwendung |
| JP3823312B2 (ja) | 2001-10-18 | 2006-09-20 | 日本電気株式会社 | 有機薄膜トランジスタ |
| DE10153563A1 (de) * | 2001-10-30 | 2003-05-15 | Infineon Technologies Ag | Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren durch Einbettung von Nanopartikeln zur Erzeugung von Feldüberhöhungen |
| DE10160732A1 (de) * | 2001-12-11 | 2003-06-26 | Siemens Ag | Organischer Feld-Effekt-Transistor mit verschobener Schwellwertspannung und Verwendung dazu |
| US6885146B2 (en) | 2002-03-14 | 2005-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device comprising substrates, contrast medium and barrier layers between contrast medium and each of substrates |
| DE10212640B4 (de) * | 2002-03-21 | 2004-02-05 | Siemens Ag | Logische Bauteile aus organischen Feldeffekttransistoren |
| DE10212639A1 (de) * | 2002-03-21 | 2003-10-16 | Siemens Ag | Vorrichtung und Verfahren zur Laserstrukturierung von Funktionspolymeren und Verwendungen |
| DE10226370B4 (de) * | 2002-06-13 | 2008-12-11 | Polyic Gmbh & Co. Kg | Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET) |
| JP4136482B2 (ja) * | 2002-06-20 | 2008-08-20 | キヤノン株式会社 | 有機半導体素子、その製造方法および有機半導体装置 |
| US7078702B2 (en) * | 2002-07-25 | 2006-07-18 | General Electric Company | Imager |
| WO2004017439A2 (de) | 2002-07-29 | 2004-02-26 | Siemens Aktiengesellschaft | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
| US6821811B2 (en) | 2002-08-02 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Organic thin film transistor and method of manufacturing the same, and semiconductor device having the organic thin film transistor |
| EP1526902B1 (de) * | 2002-08-08 | 2008-05-21 | PolyIC GmbH & Co. KG | Elektronisches gerät |
| US6784017B2 (en) | 2002-08-12 | 2004-08-31 | Precision Dynamics Corporation | Method of creating a high performance organic semiconductor device |
| CN100338791C (zh) | 2002-08-23 | 2007-09-19 | 波尔伊克两合公司 | 用于过电压保护的有机元件及相关电路 |
| CN1726604A (zh) * | 2002-11-05 | 2006-01-25 | 波尔伊克两合公司 | 具有高分辨率结构的有机电子元件及其制造方法 |
| DE10253154A1 (de) | 2002-11-14 | 2004-05-27 | Siemens Ag | Messgerät zur Bestimmung eines Analyten in einer Flüssigkeitsprobe |
| EP1563554B1 (de) * | 2002-11-19 | 2012-01-04 | PolyIC GmbH & Co. KG | Organisches elektronisches bauelement mit gleichem organischem material für zumindest zwei funktionsschichten |
| ATE354182T1 (de) * | 2002-11-19 | 2007-03-15 | Polyic Gmbh & Co Kg | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
| DE10300521A1 (de) * | 2003-01-09 | 2004-07-22 | Siemens Ag | Organoresistiver Speicher |
| WO2004066348A2 (de) * | 2003-01-21 | 2004-08-05 | Polyic Gmbh & Co. Kg | Organisches elektronikbauteil und verfahren zur herstellung organischer elektronik |
| DE10302149A1 (de) * | 2003-01-21 | 2005-08-25 | Siemens Ag | Verwendung leitfähiger Carbon-black/Graphit-Mischungen für die Herstellung von low-cost Elektronik |
| EP1590721B1 (en) * | 2003-01-28 | 2007-04-11 | Koninklijke Philips Electronics N.V. | Electronic device |
| CA2515614A1 (en) * | 2003-01-29 | 2004-08-12 | Polyic Gmbh & Co. Kg | Organic storage component and corresponding triggering circuit |
| US7166689B2 (en) | 2003-02-13 | 2007-01-23 | Ricoh Company, Ltd. | Aryl amine polymer, thin film transistor using the aryl amine polymer, and method of manufacturing the thin film transistor |
| WO2004079833A1 (en) * | 2003-03-07 | 2004-09-16 | Koninklijke Philips Electronics N.V. | Method of manufacturing an electronic arrangement |
| US7297621B2 (en) | 2003-04-15 | 2007-11-20 | California Institute Of Technology | Flexible carbon-based ohmic contacts for organic transistors |
| DE10330062A1 (de) * | 2003-07-03 | 2005-01-27 | Siemens Ag | Verfahren und Vorrichtung zur Strukturierung von organischen Schichten |
| DE10330064B3 (de) * | 2003-07-03 | 2004-12-09 | Siemens Ag | Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen |
| DE10338277A1 (de) * | 2003-08-20 | 2005-03-17 | Siemens Ag | Organischer Kondensator mit spannungsgesteuerter Kapazität |
| DE10339036A1 (de) | 2003-08-25 | 2005-03-31 | Siemens Ag | Organisches elektronisches Bauteil mit hochaufgelöster Strukturierung und Herstellungsverfahren dazu |
| KR100973811B1 (ko) * | 2003-08-28 | 2010-08-03 | 삼성전자주식회사 | 유기 반도체를 사용한 박막 트랜지스터 표시판 및 그 제조방법 |
| DE10340644B4 (de) * | 2003-09-03 | 2010-10-07 | Polyic Gmbh & Co. Kg | Mechanische Steuerelemente für organische Polymerelektronik |
| DE10340643B4 (de) * | 2003-09-03 | 2009-04-16 | Polyic Gmbh & Co. Kg | Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht |
| KR100692448B1 (ko) | 2003-11-17 | 2007-03-09 | 후지제롯쿠스 가부시끼가이샤 | 유기 반도체 트랜지스터 소자, 이것을 사용한 반도체 장치및 그 반도체 장치의 제조 방법 |
| US7767998B2 (en) * | 2003-12-04 | 2010-08-03 | Alcatel-Lucent Usa Inc. | OFETs with active channels formed of densified layers |
| KR100576719B1 (ko) * | 2003-12-24 | 2006-05-03 | 한국전자통신연구원 | 하부 게이트형 유기박막 트랜지스터의 제조방법 |
| US7554121B2 (en) * | 2003-12-26 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor device |
| JP4877869B2 (ja) * | 2003-12-26 | 2012-02-15 | 株式会社半導体エネルギー研究所 | 有機半導体素子の作製方法 |
| US7659138B2 (en) * | 2003-12-26 | 2010-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an organic semiconductor element |
| DE102004002024A1 (de) * | 2004-01-14 | 2005-08-11 | Siemens Ag | Organischer Transistor mit selbstjustierender Gate-Elektrode und Verfahren zu dessen Herstellung |
| JP4100351B2 (ja) * | 2004-02-09 | 2008-06-11 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
| JP2005268550A (ja) * | 2004-03-18 | 2005-09-29 | Japan Science & Technology Agency | 有機半導体及びそれを用いた半導体装置並びにそれらの製造方法 |
| US20050211973A1 (en) * | 2004-03-23 | 2005-09-29 | Kiyotaka Mori | Stressed organic semiconductor |
| JP4449549B2 (ja) | 2004-04-15 | 2010-04-14 | 日本電気株式会社 | 有橋環式炭化水素ラクトン構造を有する材料を用いた有機薄膜トランジスタとその製造方法 |
| US20050275056A1 (en) * | 2004-05-26 | 2005-12-15 | Stephen Forrest | Organic heterojunction bipolar transistor |
| DE102004040831A1 (de) * | 2004-08-23 | 2006-03-09 | Polyic Gmbh & Co. Kg | Funketikettfähige Umverpackung |
| US7291522B2 (en) * | 2004-10-28 | 2007-11-06 | Hewlett-Packard Development Company, L.P. | Semiconductor devices and methods of making |
| DE102004059465A1 (de) * | 2004-12-10 | 2006-06-14 | Polyic Gmbh & Co. Kg | Erkennungssystem |
| DE102004059464A1 (de) * | 2004-12-10 | 2006-06-29 | Polyic Gmbh & Co. Kg | Elektronikbauteil mit Modulator |
| DE102004059467A1 (de) * | 2004-12-10 | 2006-07-20 | Polyic Gmbh & Co. Kg | Gatter aus organischen Feldeffekttransistoren |
| DE102004063435A1 (de) | 2004-12-23 | 2006-07-27 | Polyic Gmbh & Co. Kg | Organischer Gleichrichter |
| DE102005009819A1 (de) | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe |
| DE102005009820A1 (de) * | 2005-03-01 | 2006-09-07 | Polyic Gmbh & Co. Kg | Elektronikbaugruppe mit organischen Logik-Schaltelementen |
| KR101133767B1 (ko) | 2005-03-09 | 2012-04-09 | 삼성전자주식회사 | 유기 박막 트랜지스터 표시판 및 그 제조 방법 |
| JP4632034B2 (ja) * | 2005-03-10 | 2011-02-16 | セイコーエプソン株式会社 | 有機強誘電体メモリの製造方法 |
| JP4667096B2 (ja) * | 2005-03-25 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
| DE102005017655B4 (de) | 2005-04-15 | 2008-12-11 | Polyic Gmbh & Co. Kg | Mehrschichtiger Verbundkörper mit elektronischer Funktion |
| DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
| DE102005035589A1 (de) | 2005-07-29 | 2007-02-01 | Polyic Gmbh & Co. Kg | Verfahren zur Herstellung eines elektronischen Bauelements |
| DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
| US7521710B2 (en) | 2006-02-16 | 2009-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor |
| US20070215863A1 (en) * | 2006-03-15 | 2007-09-20 | Lucent Technologies Inc. | Fabricating apparatus with doped organic semiconductors |
| DE102006013605A1 (de) * | 2006-03-22 | 2007-10-11 | Polyic Gmbh & Co. Kg | Verfahren zum Programmieren einer elektronischen Schaltung sowie elektronische Schaltung |
| WO2007117672A2 (en) | 2006-04-07 | 2007-10-18 | Qd Vision, Inc. | Methods of depositing nanomaterial & methods of making a device |
| JP2007287961A (ja) * | 2006-04-18 | 2007-11-01 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ及びその製造方法 |
| WO2008111947A1 (en) | 2006-06-24 | 2008-09-18 | Qd Vision, Inc. | Methods and articles including nanomaterial |
| JP5368797B2 (ja) | 2006-10-12 | 2013-12-18 | 出光興産株式会社 | 有機薄膜トランジスタ素子及び有機薄膜発光トランジスタ |
| JP5337490B2 (ja) | 2006-11-14 | 2013-11-06 | 出光興産株式会社 | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
| WO2008059817A1 (fr) | 2006-11-14 | 2008-05-22 | Idemitsu Kosan Co., Ltd. | Transistor mince film organique et transistor électrolumiscent à mince film organique |
| WO2008062715A1 (en) | 2006-11-24 | 2008-05-29 | Idemitsu Kosan Co., Ltd. | Organic thin film transistor and organic thin film light-emitting transistor |
| JPWO2008062841A1 (ja) | 2006-11-24 | 2010-03-04 | 出光興産株式会社 | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
| WO2008069060A1 (ja) * | 2006-12-04 | 2008-06-12 | Idemitsu Kosan Co., Ltd. | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
| WO2008069061A1 (ja) * | 2006-12-04 | 2008-06-12 | Idemitsu Kosan Co., Ltd. | 有機薄膜トランジスタ及び有機薄膜発光トランジスタ |
| TW201002722A (en) | 2008-01-22 | 2010-01-16 | Ricoh Co Ltd | Benzobisthiazole compound, benzobisthiazole polymer, organic film including the compound or polymer and transistor including the organic film |
| US7821000B2 (en) | 2008-02-01 | 2010-10-26 | Alcatel-Lucent Usa Inc. | Method of doping organic semiconductors |
| JP2010225758A (ja) * | 2009-03-23 | 2010-10-07 | Fuji Xerox Co Ltd | 有機半導体トランジスタ |
| JP4893767B2 (ja) * | 2009-03-24 | 2012-03-07 | 富士ゼロックス株式会社 | 有機半導体トランジスタ |
| JP5347690B2 (ja) * | 2009-04-30 | 2013-11-20 | 富士ゼロックス株式会社 | 有機電界発光素子、及び表示媒体 |
| US9011729B2 (en) | 2010-04-22 | 2015-04-21 | Idemitsu Kosan Co., Ltd. | Organic thin-film transistor |
| JP5659567B2 (ja) * | 2010-06-11 | 2015-01-28 | 富士ゼロックス株式会社 | 有機トランジスタ及び有機トランジスタの製造方法 |
| JP5966353B2 (ja) | 2011-12-26 | 2016-08-10 | 富士ゼロックス株式会社 | 有機半導体トランジスタ |
| KR101582991B1 (ko) * | 2014-05-23 | 2016-01-20 | 연세대학교 산학협력단 | 플렉서블 유기박막 트랜지스터 및 이를 포함한 센서 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8909011D0 (en) * | 1989-04-20 | 1989-06-07 | Friend Richard H | Electroluminescent devices |
| JPH03236286A (ja) * | 1990-02-14 | 1991-10-22 | Toshiba Corp | 有機膜素子 |
| US5315129A (en) * | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
| JP3224829B2 (ja) * | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
-
1994
- 1994-12-09 US US08/353,032 patent/US5574291A/en not_active Expired - Lifetime
-
1995
- 1995-02-14 TW TW084101308A patent/TW279260B/zh not_active IP Right Cessation
- 1995-10-12 CA CA002160394A patent/CA2160394C/en not_active Expired - Lifetime
- 1995-11-28 DE DE69532794T patent/DE69532794T2/de not_active Expired - Lifetime
- 1995-11-28 EP EP95308517A patent/EP0716458B1/en not_active Expired - Lifetime
- 1995-12-05 MX MX9505068A patent/MX9505068A/es not_active IP Right Cessation
- 1995-12-09 KR KR1019950049121A patent/KR100351009B1/ko not_active Expired - Lifetime
- 1995-12-11 JP JP34545495A patent/JP3145294B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69532794D1 (de) | 2004-05-06 |
| KR100351009B1 (ko) | 2003-01-29 |
| MX9505068A (es) | 1997-01-31 |
| JP3145294B2 (ja) | 2001-03-12 |
| DE69532794T2 (de) | 2005-03-17 |
| KR960026961A (ko) | 1996-07-22 |
| EP0716458B1 (en) | 2004-03-31 |
| JPH08228035A (ja) | 1996-09-03 |
| US5574291A (en) | 1996-11-12 |
| CA2160394A1 (en) | 1996-06-10 |
| EP0716458A2 (en) | 1996-06-12 |
| EP0716458A3 (en) | 1997-11-26 |
| TW279260B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1996-06-21 |
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