BR8301321A - Aperfeicoamentos em mascara de producao de deslocamento de fase para uso em fotolitografia - Google Patents
Aperfeicoamentos em mascara de producao de deslocamento de fase para uso em fotolitografiaInfo
- Publication number
- BR8301321A BR8301321A BR8301321A BR8301321A BR8301321A BR 8301321 A BR8301321 A BR 8301321A BR 8301321 A BR8301321 A BR 8301321A BR 8301321 A BR8301321 A BR 8301321A BR 8301321 A BR8301321 A BR 8301321A
- Authority
- BR
- Brazil
- Prior art keywords
- photolitography
- phase shift
- production mask
- shift production
- mask
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36567282A | 1982-04-05 | 1982-04-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8301321A true BR8301321A (pt) | 1983-11-29 |
Family
ID=23439854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8301321A BR8301321A (pt) | 1982-04-05 | 1983-03-16 | Aperfeicoamentos em mascara de producao de deslocamento de fase para uso em fotolitografia |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0090924B1 (pt) |
JP (1) | JPS58173744A (pt) |
AU (1) | AU564369B2 (pt) |
BR (1) | BR8301321A (pt) |
CA (1) | CA1190082A (pt) |
DE (1) | DE3374452D1 (pt) |
Families Citing this family (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1270934A (en) * | 1985-03-20 | 1990-06-26 | Masataka Shirasaki | Spatial phase modulating masks and production processes thereof, and processes for the formation of phase-shifted diffraction gratings |
US4964146A (en) * | 1985-07-31 | 1990-10-16 | Hitachi, Ltd. | Pattern transistor mask and method of using the same |
JPH0738372B2 (ja) * | 1985-10-18 | 1995-04-26 | 工業技術院長 | パタンの形成方法 |
JPS62100751A (ja) * | 1985-10-24 | 1987-05-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 自己整合パタ−ンの形成方法 |
JPH0690507B2 (ja) * | 1986-02-17 | 1994-11-14 | 株式会社日立製作所 | ホトマスク,及びそれを用いた投影露光方法、並びにホトマスクの製造方法 |
JP2810061B2 (ja) * | 1988-09-14 | 1998-10-15 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5235400A (en) * | 1988-10-12 | 1993-08-10 | Hitachi, Ltd. | Method of and apparatus for detecting defect on photomask |
JP2710967B2 (ja) | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
JP2786693B2 (ja) * | 1989-10-02 | 1998-08-13 | 株式会社日立製作所 | マスクの製造方法 |
US5234780A (en) * | 1989-02-13 | 1993-08-10 | Kabushiki Kaisha Toshiba | Exposure mask, method of manufacturing the same, and exposure method using the same |
DE69028871T2 (de) * | 1989-04-28 | 1997-02-27 | Fujitsu Ltd | Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske |
EP0401795A3 (en) * | 1989-06-08 | 1991-03-27 | Oki Electric Industry Company, Limited | Phase-shifting photomask for negative resist and process for forming isolated, negative resist pattern using the phaseshifting photomask |
JP2779221B2 (ja) * | 1989-08-25 | 1998-07-23 | 沖電気工業株式会社 | 位相差レチクルを用いた露光及び検査方法 |
US5362591A (en) * | 1989-10-09 | 1994-11-08 | Hitachi Ltd. Et Al. | Mask having a phase shifter and method of manufacturing same |
JP2864570B2 (ja) * | 1989-10-27 | 1999-03-03 | ソニー株式会社 | 露光マスク及び露光方法 |
JP2946567B2 (ja) * | 1989-11-15 | 1999-09-06 | ソニー株式会社 | メモリ半導体構造及び位相シフトマスク |
EP0437376B1 (en) * | 1990-01-12 | 1997-03-19 | Sony Corporation | Phase shifting masks and methods of manufacture |
JPH03228053A (ja) * | 1990-02-01 | 1991-10-09 | Fujitsu Ltd | 光露光レチクル |
JP2519815B2 (ja) * | 1990-03-01 | 1996-07-31 | 三菱電機株式会社 | フォトマスク及びその製造方法 |
US5298365A (en) | 1990-03-20 | 1994-03-29 | Hitachi, Ltd. | Process for fabricating semiconductor integrated circuit device, and exposing system and mask inspecting method to be used in the process |
DE59010548D1 (de) * | 1990-04-09 | 1996-11-28 | Siemens Ag | Phasenmaske für die Projektionsphotolithographie und Verfahren zu deren Herstellung |
JP2634289B2 (ja) * | 1990-04-18 | 1997-07-23 | 三菱電機株式会社 | 位相シフトマスクの修正方法 |
KR920009369B1 (ko) * | 1990-05-25 | 1992-10-15 | 삼성전자 주식회사 | 마스크의 제작방법 |
WO1991020018A1 (fr) * | 1990-06-21 | 1991-12-26 | Oki Electric Industry Co., Ltd. | Masque de decalage de phase |
EP0464614B1 (en) * | 1990-06-25 | 1999-09-29 | Matsushita Electronics Corporation | A composition having sensitivity to light or radiation |
EP0773477B1 (en) | 1990-09-21 | 2001-05-30 | Dai Nippon Printing Co., Ltd. | Process for producing a phase shift photomask |
JP2502192B2 (ja) * | 1990-11-29 | 1996-05-29 | 旭硝子株式会社 | 位相シフトマスクおよびその製造方法 |
JPH04216548A (ja) * | 1990-12-18 | 1992-08-06 | Mitsubishi Electric Corp | フォトマスク |
JP3202253B2 (ja) * | 1991-03-29 | 2001-08-27 | 株式会社東芝 | 露光用マスクの製造方法及び露光用マスク |
JP3030920B2 (ja) * | 1991-04-26 | 2000-04-10 | ソニー株式会社 | セルフアライン位相シフトマスクの製造方法 |
JPH0777794A (ja) * | 1991-05-30 | 1995-03-20 | Sony Corp | 位相シフトマスク |
JP3120474B2 (ja) * | 1991-06-10 | 2000-12-25 | 株式会社日立製作所 | 半導体集積回路装置の製造方法 |
JP3179520B2 (ja) * | 1991-07-11 | 2001-06-25 | 株式会社日立製作所 | 半導体装置の製造方法 |
US5633102A (en) * | 1991-08-23 | 1997-05-27 | Intel Corporation | Lithography using a new phase-shifting reticle |
JP2759582B2 (ja) * | 1991-09-05 | 1998-05-28 | 三菱電機株式会社 | フォトマスクおよびその製造方法 |
JPH05197128A (ja) * | 1991-10-01 | 1993-08-06 | Oki Electric Ind Co Ltd | ホトマスク及びそれを用いたパターン形成方法 |
JP2874406B2 (ja) * | 1991-10-09 | 1999-03-24 | 株式会社日立製作所 | 位相シフタマスクの欠陥修正方法 |
JPH0611826A (ja) * | 1992-04-28 | 1994-01-21 | Mitsubishi Electric Corp | フォトマスク及びその製造方法 |
US5691115A (en) * | 1992-06-10 | 1997-11-25 | Hitachi, Ltd. | Exposure method, aligner, and method of manufacturing semiconductor integrated circuit devices |
JPH0715578B2 (ja) * | 1992-06-19 | 1995-02-22 | 株式会社日立製作所 | ホトマスク用原板 |
JP3328323B2 (ja) * | 1992-07-20 | 2002-09-24 | 株式会社日立製作所 | 位相シフトマスクの製造方法および半導体集積回路装置の製造方法 |
US5700602A (en) * | 1992-08-21 | 1997-12-23 | Intel Corporation | Method and apparatus for precision determination of phase-shift in a phase-shifted reticle |
US5302477A (en) * | 1992-08-21 | 1994-04-12 | Intel Corporation | Inverted phase-shifted reticle |
US5789118A (en) * | 1992-08-21 | 1998-08-04 | Intel Corporation | Method and apparatus for precision determination of phase-shift in a phase-shifted reticle |
US5300379A (en) * | 1992-08-21 | 1994-04-05 | Intel Corporation | Method of fabrication of inverted phase-shifted reticle |
US5474807A (en) * | 1992-09-30 | 1995-12-12 | Hoya Corporation | Method for applying or removing coatings at a confined peripheral region of a substrate |
US5300786A (en) * | 1992-10-28 | 1994-04-05 | International Business Machines Corporation | Optical focus phase shift test pattern, monitoring system and process |
JP3064769B2 (ja) * | 1992-11-21 | 2000-07-12 | アルバック成膜株式会社 | 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法 |
US5674647A (en) * | 1992-11-21 | 1997-10-07 | Ulvac Coating Corporation | Phase shift mask and manufacturing method thereof and exposure method using phase shift mask |
KR0135729B1 (en) * | 1993-02-12 | 1998-04-24 | Mitsubishi Electric Corp | Attenuating type phase shifting mask and method of manufacturing thereof |
US5593801A (en) * | 1993-02-12 | 1997-01-14 | Mitsubishi Denki Kabushiki Kaisha | Attenuating type phase shifting mask, method of manufacturing thereof and semiconductor device manufactured by using the mask |
JP2590700B2 (ja) * | 1993-09-16 | 1997-03-12 | 日本電気株式会社 | 投影露光装置 |
JP3354305B2 (ja) * | 1993-09-24 | 2002-12-09 | 大日本印刷株式会社 | 位相シフトマスクおよび位相シフトマスクの欠陥修正方法 |
JP3453435B2 (ja) * | 1993-10-08 | 2003-10-06 | 大日本印刷株式会社 | 位相シフトマスクおよびその製造方法 |
JP3209645B2 (ja) * | 1993-10-12 | 2001-09-17 | 三菱電機株式会社 | 位相シフトマスクの検査方法およびその方法に用いる検査装置 |
JPH07281413A (ja) * | 1994-04-05 | 1995-10-27 | Mitsubishi Electric Corp | 減衰型位相シフトマスクおよびその製造方法 |
JP3315254B2 (ja) * | 1994-07-11 | 2002-08-19 | 三菱電機株式会社 | 減衰型位相シフトマスクを用いた露光方法 |
US5595843A (en) * | 1995-03-30 | 1997-01-21 | Intel Corporation | Layout methodology, mask set, and patterning method for phase-shifting lithography |
US5935735A (en) | 1996-10-24 | 1999-08-10 | Toppan Printing Co., Ltd. | Halftone phase shift mask, blank for the same, and methods of manufacturing these |
US6544721B1 (en) | 1998-06-16 | 2003-04-08 | Canon Kabushiki Kaisha | Multiple exposure method |
JP2000206671A (ja) | 1999-01-13 | 2000-07-28 | Mitsubishi Electric Corp | フォトマスク、フォトマスクの製造方法、および半導体集積回路装置の製造方法 |
JP4328922B2 (ja) | 1999-09-21 | 2009-09-09 | 信越化学工業株式会社 | 位相シフト型フォトマスク |
US6436608B1 (en) * | 2000-01-20 | 2002-08-20 | Agere Systems Guardian Corp. | Lithographic method utilizing a phase-shifting mask |
EP1254049B1 (en) | 2000-01-20 | 2011-05-11 | Free-Flow Packaging International, Inc. | Apparatus for making pneumatically filled packing cushions |
US6638663B1 (en) | 2000-01-20 | 2003-10-28 | Agere Systems Inc. | Phase-shifting mask and semiconductor device |
TW480367B (en) | 2000-02-16 | 2002-03-21 | Shinetsu Chemical Co | Photomask blank, photomask and method of manufacture |
JP2001290257A (ja) | 2000-04-04 | 2001-10-19 | Dainippon Printing Co Ltd | ハーフトーン位相シフトフォトマスク及びそのためのハーフトーン位相シフトフォトマスク用ブランクス並びにこれを用いたパターン形成方法 |
JP3749083B2 (ja) | 2000-04-25 | 2006-02-22 | 株式会社ルネサステクノロジ | 電子装置の製造方法 |
JP4686006B2 (ja) | 2000-04-27 | 2011-05-18 | 大日本印刷株式会社 | ハーフトーン位相シフトフォトマスクとハーフトーン位相シフトフォトマスク用ブランクス、及びハーフトーン位相シフトフォトマスクの製造方法 |
US7282461B2 (en) | 2003-09-04 | 2007-10-16 | Agere Systems, Inc. | Phase-shifting mask and semiconductor device |
US7438997B2 (en) * | 2004-05-14 | 2008-10-21 | Intel Corporation | Imaging and devices in lithography |
JP4622504B2 (ja) * | 2004-12-21 | 2011-02-02 | 凸版印刷株式会社 | 極端紫外線露光用マスクブランク及びマスク並びにパターン転写方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DD126361A1 (pt) * | 1976-04-30 | 1977-07-13 | ||
FR2358688A1 (fr) * | 1976-07-12 | 1978-02-10 | Berezin Gennady | Procede de fabrication de masques photographiques transparents |
DE2835363A1 (de) * | 1978-08-11 | 1980-03-13 | Siemens Ag | Verfahren zum uebertragen von strukturen fuer halbleiterschaltungen |
JPS56168654A (en) * | 1980-05-30 | 1981-12-24 | Fujitsu Ltd | Photomask |
JPS576849A (en) * | 1980-06-13 | 1982-01-13 | Matsushita Electric Ind Co Ltd | Photomask and its preparation |
JPS576848A (en) * | 1980-06-13 | 1982-01-13 | Matsushita Electric Ind Co Ltd | Photomask and its preparation |
JPS5754939A (en) * | 1980-09-19 | 1982-04-01 | Matsushita Electric Ind Co Ltd | Optical mask and its manufacture |
JPS5762052A (en) * | 1980-09-30 | 1982-04-14 | Nippon Kogaku Kk <Nikon> | Original plate to be projected for use in transmission |
-
1983
- 1983-02-08 EP EP19830101182 patent/EP0090924B1/en not_active Expired
- 1983-02-08 DE DE8383101182T patent/DE3374452D1/de not_active Expired
- 1983-02-09 JP JP58019020A patent/JPS58173744A/ja active Granted
- 1983-03-16 BR BR8301321A patent/BR8301321A/pt unknown
- 1983-03-23 CA CA000424282A patent/CA1190082A/en not_active Expired
- 1983-03-29 AU AU12928/83A patent/AU564369B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
AU1292883A (en) | 1983-10-13 |
JPS58173744A (ja) | 1983-10-12 |
DE3374452D1 (en) | 1987-12-17 |
EP0090924A3 (en) | 1984-10-17 |
JPS6259296B2 (pt) | 1987-12-10 |
CA1190082A (en) | 1985-07-09 |
AU564369B2 (en) | 1987-08-13 |
EP0090924A2 (en) | 1983-10-12 |
EP0090924B1 (en) | 1987-11-11 |
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