BE749485A - Technique de fabrication de semi-conducteurs et dispositifs ainsi formes en utilisant un conducteur metallique dope - Google Patents

Technique de fabrication de semi-conducteurs et dispositifs ainsi formes en utilisant un conducteur metallique dope

Info

Publication number
BE749485A
BE749485A BE749485DA BE749485A BE 749485 A BE749485 A BE 749485A BE 749485D A BE749485D A BE 749485DA BE 749485 A BE749485 A BE 749485A
Authority
BE
Belgium
Prior art keywords
technique
devices
metal conductor
manufacturing semiconductors
dope metal
Prior art date
Application number
Other languages
English (en)
French (fr)
Inventor
W E Engeler
M Garfinkel
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BE749485A publication Critical patent/BE749485A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
BE749485D 1969-04-25 1970-04-24 Technique de fabrication de semi-conducteurs et dispositifs ainsi formes en utilisant un conducteur metallique dope BE749485A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81918669A 1969-04-25 1969-04-25

Publications (1)

Publication Number Publication Date
BE749485A true BE749485A (fr) 1970-10-26

Family

ID=25227434

Family Applications (1)

Application Number Title Priority Date Filing Date
BE749485D BE749485A (fr) 1969-04-25 1970-04-24 Technique de fabrication de semi-conducteurs et dispositifs ainsi formes en utilisant un conducteur metallique dope

Country Status (9)

Country Link
US (1) US3601888A (https=)
JP (1) JPS5443352B1 (https=)
BE (1) BE749485A (https=)
DE (2) DE2019655C2 (https=)
FR (1) FR2049078B1 (https=)
GB (1) GB1317583A (https=)
IE (1) IE33752B1 (https=)
NL (1) NL174684C (https=)
SE (1) SE365343B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050966A (en) * 1968-12-20 1977-09-27 Siemens Aktiengesellschaft Method for the preparation of diffused silicon semiconductor components
US3919007A (en) * 1969-08-12 1975-11-11 Kogyo Gijutsuin Method of manufacturing a field-effect transistor
US3604986A (en) * 1970-03-17 1971-09-14 Bell Telephone Labor Inc High frequency transistors with shallow emitters
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
JPS567304B2 (https=) * 1972-08-28 1981-02-17
US3909926A (en) * 1973-11-07 1975-10-07 Jearld L Hutson Method of fabricating a semiconductor diode having high voltage characteristics
JPS593421Y2 (ja) * 1979-05-31 1984-01-30 ソニー株式会社 テ−プカセツト
IE52791B1 (en) * 1980-11-05 1988-03-02 Fujitsu Ltd Semiconductor devices
US4481046A (en) * 1983-09-29 1984-11-06 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
US4490193A (en) * 1983-09-29 1984-12-25 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
US5075756A (en) * 1990-02-12 1991-12-24 At&T Bell Laboratories Low resistance contacts to semiconductor materials
US6225218B1 (en) * 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
DE10315897B4 (de) * 2003-04-08 2005-03-10 Karlsruhe Forschzent Verfahren und Verwendung einer Vorrichtung zur Trennung von metallischen und halbleitenden Kohlenstoff-Nanoröhren
JP4914438B2 (ja) * 2005-05-17 2012-04-11 マックス−プランク−ゲゼルシャフト・ツア・フェルデルング・デア・ヴィッセンシャフテン・エー・ファオ 水素ベースのプラズマを用いた処理による材料の清浄化
US20080029854A1 (en) * 2006-08-03 2008-02-07 United Microelectronics Corp. Conductive shielding pattern and semiconductor structure with inductor device
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US3169304A (en) * 1961-06-22 1965-02-16 Giannini Controls Corp Method of forming an ohmic semiconductor contact
US3206827A (en) * 1962-07-06 1965-09-21 Gen Instrument Corp Method of producing a semiconductor device
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
JPS556287B1 (https=) * 1966-04-27 1980-02-15
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
FR1531539A (fr) * 1966-05-23 1968-07-05 Siemens Ag Procédé de fabrication d'un transistor
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array

Also Published As

Publication number Publication date
FR2049078B1 (https=) 1974-05-03
GB1317583A (en) 1973-05-23
US3601888A (en) 1971-08-31
DE2019655A1 (de) 1970-11-12
FR2049078A1 (https=) 1971-03-26
JPS5443352B1 (https=) 1979-12-19
NL174684C (nl) 1984-07-16
IE33752L (en) 1970-10-25
DE2019655C2 (de) 1982-05-06
NL7005888A (https=) 1970-10-27
SE365343B (https=) 1974-03-18
IE33752B1 (en) 1974-10-16
DE7015061U (de) 1972-01-05

Similar Documents

Publication Publication Date Title
BE749485A (fr) Technique de fabrication de semi-conducteurs et dispositifs ainsi formes en utilisant un conducteur metallique dope
FR2326038A1 (fr) Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant
FR2276692A1 (fr) Procede de fabrication de dispositifs semiconducteurs
BE606680A (fr) Fabrication de dispositifs semi-conducteurs
FR2006784A1 (fr) Procede de fabrication de dispositifs a semi-conducteurs
FR2340619A1 (fr) Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus
FR1485063A (fr) Dispositifs semi-conducteurs et leur procédé de fabrication
FR1519780A (fr) Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication
FR1444353A (fr) Dispositifs semi-conducteurs et procédés de fabrication
FR1307782A (fr) Fabrication de dispositifs semi-conducteurs
SE381994B (sv) Forfarande for att framstella metallfibertradar
FR1365283A (fr) Fabrication de dispositifs semiconducteurs
FR95067E (fr) Procédé de fabrication de dispositifs semi-conducteurs.
BR6912979D0 (pt) Processo de fabricacao de dispositivo semicondutor dispositivo semicondutor fabricado pelo mesmo
FR1522338A (fr) Procédé de fabrication de circuits imprimés
BE763330A (fr) Dispositif a semiconducteur a grande-tension electrique de claquage a la jonction et son procede de fabrication
BE764103A (fr) Jonction josephson et son procede de fabrication
FR2000029A1 (fr) Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication
FR1458890A (fr) Module pour circuits électriques et son procédé de fabrication
FR2332801A1 (fr) Procede de fabrication de dispositifs semi-conducteurs
BR6462522D0 (pt) Dispositivos semicondutores e processo de fabrica-los
CH488377A (de) Elektrische Baugruppe für die elektrische Nachrichtentechnik
FR1530106A (fr) Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés
BE775909A (fr) Procede de fabrication de contacts schottky
BE766651A (fr) Procede pour la fabrication de dispositifs semiconducteurs a circuits integres