FR1519780A - Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication - Google Patents

Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication

Info

Publication number
FR1519780A
FR1519780A FR8354A FR06008354A FR1519780A FR 1519780 A FR1519780 A FR 1519780A FR 8354 A FR8354 A FR 8354A FR 06008354 A FR06008354 A FR 06008354A FR 1519780 A FR1519780 A FR 1519780A
Authority
FR
France
Prior art keywords
semiconductor devices
manufacturing processes
integrated semiconductor
integrated
processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8354A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of FR1519780A publication Critical patent/FR1519780A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/764—Air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76275—Vertical isolation by bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Element Separation (AREA)
FR8354A 1966-03-08 1967-02-14 Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication Expired FR1519780A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US532754A US3416224A (en) 1966-03-08 1966-03-08 Integrated semiconductor devices and fabrication methods therefor

Publications (1)

Publication Number Publication Date
FR1519780A true FR1519780A (fr) 1968-04-05

Family

ID=24123036

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8354A Expired FR1519780A (fr) 1966-03-08 1967-02-14 Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication

Country Status (2)

Country Link
US (1) US3416224A (fr)
FR (1) FR1519780A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268348A (en) * 1963-12-16 1981-05-19 Signetics Corporation Method for making semiconductor structure
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US3579815A (en) * 1969-08-20 1971-05-25 Gen Electric Process for wafer fabrication of high blocking voltage silicon elements
FR2100997B1 (fr) * 1970-08-04 1973-12-21 Silec Semi Conducteurs
US3815223A (en) * 1971-02-08 1974-06-11 Signetics Corp Method for making semiconductor structure with dielectric and air isolation
US3792525A (en) * 1971-08-04 1974-02-19 Gen Motors Corp Method of making a semiconductive signal translating device
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices
JPS5218069B2 (fr) * 1972-08-09 1977-05-19
US3850710A (en) * 1972-11-06 1974-11-26 Rca Corp Method of making a quasi-monolithic integrated circuit structure
US3852876A (en) * 1973-01-02 1974-12-10 Gen Electric High voltage power transistor and method for making
US3966577A (en) * 1973-08-27 1976-06-29 Trw Inc. Dielectrically isolated semiconductor devices
US3875657A (en) * 1973-09-04 1975-04-08 Trw Inc Dielectrically isolated semiconductor devices
US3883948A (en) * 1974-01-02 1975-05-20 Signetics Corp Semiconductor structure and method
US3998673A (en) * 1974-08-16 1976-12-21 Pel Chow Method for forming electrically-isolated regions in integrated circuits utilizing selective epitaxial growth
US4034187A (en) * 1974-09-18 1977-07-05 Matsushita Electric Industrial Co., Ltd. Thermal printing head
US4131910A (en) * 1977-11-09 1978-12-26 Bell Telephone Laboratories, Incorporated High voltage semiconductor devices
JPS5759349A (en) * 1980-09-29 1982-04-09 Oki Electric Ind Co Ltd Manufacture of semiconductor device
US4501060A (en) * 1983-01-24 1985-02-26 At&T Bell Laboratories Dielectrically isolated semiconductor devices
JPS6173345A (ja) * 1984-09-19 1986-04-15 Toshiba Corp 半導体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3247428A (en) * 1961-09-29 1966-04-19 Ibm Coated objects and methods of providing the protective coverings therefor
US3332137A (en) * 1964-09-28 1967-07-25 Rca Corp Method of isolating chips of a wafer of semiconductor material

Also Published As

Publication number Publication date
US3416224A (en) 1968-12-17

Similar Documents

Publication Publication Date Title
FR1519780A (fr) Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication
FR1461972A (fr) Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs
FR1389809A (fr) Perfectionnements aux dispositifs photosensibles et à leurs procédés de fabrication
FR1456384A (fr) Dispositifs semi-conducteurs et leurs procédés de fabrication
FR1444353A (fr) Dispositifs semi-conducteurs et procédés de fabrication
FR1343800A (fr) Dispositifs semi-conducteurs et leurs procédés de fabrication
BR7018863D0 (pt) Dispositivo semicondutor integrado
FR1461973A (fr) Nouveaux perfectionnements apportés aux procédés de fabrication de dispositifs semiconducteurs
FR1500981A (fr) Structure tridimensionnelle et ses procédés de fabrication
FR1517241A (fr) Procédé de fabrication des dispositifs à semi-conducteurs
FR1513038A (fr) Nouveaux isoxazoles et leurs procédés de fabrication
FR1530106A (fr) Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés
FR1480731A (fr) Dispositifs semi-conducteurs et leurs procédés de fabrication
FR1515678A (fr) Procédé de fabrication des dispositifs à semi-conducteur
FR1532425A (fr) Circuits intégrés et leurs procédés de fabrication
FR1426515A (fr) Microfiche et ses procédés et dispositifs de fabrication
FR1530992A (fr) Perfectionnements aux dispositifs à semiconducteur et à leurs procédés de fabrication
FR1410872A (fr) Dispositifs à semiconducteurs et leurs procédés de fabrication
FR1493465A (fr) Perfectionnements aux procédés de fabrication de dispositifs semi-conducteurs
FR1503797A (fr) Sulfathiadiazoles et leurs procédés de fabrication
FR1481683A (fr) Perfectionnements aux dispositifs à semiconducteur et à leurs procédés de fabrication
FR1413748A (fr) Fabrication de dispositifs semi-conducteurs
FR1530053A (fr) Procédé de fabrication de dispositifs semi-conducteurs
FR1321294A (fr) Dispositifs semi-conducteurs et leurs procédés de fabrication
FR1430254A (fr) Perfectionnements aux circuits intégrés à semiconducteur et à leurs procédés de fabrication