FR1456384A - Dispositifs semi-conducteurs et leurs procédés de fabrication - Google Patents
Dispositifs semi-conducteurs et leurs procédés de fabricationInfo
- Publication number
- FR1456384A FR1456384A FR41180A FR41180A FR1456384A FR 1456384 A FR1456384 A FR 1456384A FR 41180 A FR41180 A FR 41180A FR 41180 A FR41180 A FR 41180A FR 1456384 A FR1456384 A FR 1456384A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- manufacturing processes
- processes
- manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US416521A US3356543A (en) | 1964-12-07 | 1964-12-07 | Method of decreasing the minority carrier lifetime by diffusion |
US673142A US3445735A (en) | 1964-12-07 | 1967-10-05 | High speed controlled rectifiers with deep level dopants |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1456384A true FR1456384A (fr) | 1966-10-21 |
Family
ID=27023383
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR41180A Expired FR1456384A (fr) | 1964-12-07 | 1965-12-07 | Dispositifs semi-conducteurs et leurs procédés de fabrication |
Country Status (8)
Country | Link |
---|---|
US (2) | US3356543A (fr) |
BR (1) | BR6575346D0 (fr) |
DE (1) | DE1514376B2 (fr) |
ES (1) | ES320362A1 (fr) |
FR (1) | FR1456384A (fr) |
GB (1) | GB1130511A (fr) |
NL (1) | NL6515878A (fr) |
SE (1) | SE362165B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2290035A1 (fr) * | 1974-11-04 | 1976-05-28 | Bbc Brown Boveri & Cie | Procede de production de composants a semi-conducteurs |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3442722A (en) * | 1964-12-16 | 1969-05-06 | Siemens Ag | Method of making a pnpn thyristor |
US3473976A (en) * | 1966-03-31 | 1969-10-21 | Ibm | Carrier lifetime killer doping process for semiconductor structures and the product formed thereby |
US3453154A (en) * | 1966-06-17 | 1969-07-01 | Globe Union Inc | Process for establishing low zener breakdown voltages in semiconductor regulators |
US3487276A (en) * | 1966-11-15 | 1969-12-30 | Westinghouse Electric Corp | Thyristor having improved operating characteristics at high temperature |
DE1614410B2 (de) * | 1967-01-25 | 1973-12-13 | Siemens Ag, 1000 Berlin U. 8000 Muenchen | Halbleiterbauelement |
JPS4735764U (fr) * | 1972-05-04 | 1972-12-20 | ||
US3963523A (en) * | 1973-04-26 | 1976-06-15 | Matsushita Electronics Corporation | Method of manufacturing semiconductor devices |
US4117505A (en) * | 1976-11-19 | 1978-09-26 | Mitsubishi Denki Kabushiki Kaisha | Thyristor with heat sensitive switching characteristics |
US4140560A (en) * | 1977-06-20 | 1979-02-20 | International Rectifier Corporation | Process for manufacture of fast recovery diodes |
JPS57109373A (en) * | 1980-12-25 | 1982-07-07 | Mitsubishi Electric Corp | Semiconductor device |
JPH0691244B2 (ja) * | 1984-04-27 | 1994-11-14 | 三菱電機株式会社 | ゲートターンオフサイリスタの製造方法 |
US5528058A (en) * | 1986-03-21 | 1996-06-18 | Advanced Power Technology, Inc. | IGBT device with platinum lifetime control and reduced gaw |
US5418172A (en) * | 1993-06-29 | 1995-05-23 | Memc Electronic Materials S.P.A. | Method for detecting sources of contamination in silicon using a contamination monitor wafer |
US7754513B2 (en) * | 2007-02-28 | 2010-07-13 | International Business Machines Corporation | Latch-up resistant semiconductor structures on hybrid substrates and methods for forming such semiconductor structures |
US20210164917A1 (en) * | 2019-12-03 | 2021-06-03 | Kla Corporation | Low-reflectivity back-illuminated image sensor |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2827436A (en) * | 1956-01-16 | 1958-03-18 | Bell Telephone Labor Inc | Method of improving the minority carrier lifetime in a single crystal silicon body |
BE580254A (fr) * | 1958-07-17 | |||
GB1052447A (fr) * | 1962-09-15 | |||
US3246172A (en) * | 1963-03-26 | 1966-04-12 | Richard J Sanford | Four-layer semiconductor switch with means to provide recombination centers |
BR6462522D0 (pt) * | 1963-10-28 | 1973-05-15 | Rca Corp | Dispositivos semicondutores e processo de fabrica-los |
DE1439347A1 (de) * | 1964-03-18 | 1968-11-07 | Siemens Ag | Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ |
-
1964
- 1964-12-07 US US416521A patent/US3356543A/en not_active Expired - Lifetime
-
1965
- 1965-11-22 GB GB49589/65A patent/GB1130511A/en not_active Expired
- 1965-11-30 BR BR175346/65A patent/BR6575346D0/pt unknown
- 1965-12-03 DE DE19651514376 patent/DE1514376B2/de active Pending
- 1965-12-04 ES ES0320362A patent/ES320362A1/es not_active Expired
- 1965-12-06 SE SE15746/65A patent/SE362165B/xx unknown
- 1965-12-07 NL NL6515878A patent/NL6515878A/xx unknown
- 1965-12-07 FR FR41180A patent/FR1456384A/fr not_active Expired
-
1967
- 1967-10-05 US US673142A patent/US3445735A/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2290035A1 (fr) * | 1974-11-04 | 1976-05-28 | Bbc Brown Boveri & Cie | Procede de production de composants a semi-conducteurs |
Also Published As
Publication number | Publication date |
---|---|
SE362165B (fr) | 1973-11-26 |
NL6515878A (fr) | 1966-06-08 |
DE1514376B2 (de) | 1971-03-11 |
BR6575346D0 (pt) | 1973-07-05 |
US3356543A (en) | 1967-12-05 |
DE1514376A1 (de) | 1970-08-20 |
GB1130511A (en) | 1968-10-16 |
US3445735A (en) | 1969-05-20 |
ES320362A1 (es) | 1966-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1461972A (fr) | Perfectionnements aux procédés de fabrication de dispositifs semiconducteurs | |
FR1519780A (fr) | Dispositifs semi-conducteurs intégrés et leurs procédés de fabrication | |
FR1456384A (fr) | Dispositifs semi-conducteurs et leurs procédés de fabrication | |
FR1444353A (fr) | Dispositifs semi-conducteurs et procédés de fabrication | |
FR1343800A (fr) | Dispositifs semi-conducteurs et leurs procédés de fabrication | |
FR1424254A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1365283A (fr) | Fabrication de dispositifs semiconducteurs | |
FR1461973A (fr) | Nouveaux perfectionnements apportés aux procédés de fabrication de dispositifs semiconducteurs | |
FR1464990A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1530106A (fr) | Dispositifs semi-conducteurs perfectionnés et procédés de fabrication appropriés | |
FR1426515A (fr) | Microfiche et ses procédés et dispositifs de fabrication | |
FR1480731A (fr) | Dispositifs semi-conducteurs et leurs procédés de fabrication | |
FR1425709A (fr) | Procédé de fabrication de dispositifs à semi-conducteur | |
FR1460406A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1458293A (fr) | étoffes non tissées et leurs procédés de fabrication | |
FR1410872A (fr) | Dispositifs à semiconducteurs et leurs procédés de fabrication | |
FR1321294A (fr) | Dispositifs semi-conducteurs et leurs procédés de fabrication | |
FR1503797A (fr) | Sulfathiadiazoles et leurs procédés de fabrication | |
FR1413748A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1481683A (fr) | Perfectionnements aux dispositifs à semiconducteur et à leurs procédés de fabrication | |
FR1457006A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1292747A (fr) | Dispositifs semi-conducteurs et leurs procédés de fabrication | |
FR1440405A (fr) | Tropone-imines et leurs procédés de fabrication | |
FR1456803A (fr) | Hydroxy-alcoyl-adamantanes et leurs procédés de fabrication | |
FR1424690A (fr) | Dispositifs semi-conducteurs et leur procédé de fabrication |