NL7005888A - - Google Patents

Info

Publication number
NL7005888A
NL7005888A NL7005888A NL7005888A NL7005888A NL 7005888 A NL7005888 A NL 7005888A NL 7005888 A NL7005888 A NL 7005888A NL 7005888 A NL7005888 A NL 7005888A NL 7005888 A NL7005888 A NL 7005888A
Authority
NL
Netherlands
Application number
NL7005888A
Other versions
NL174684C (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7005888A publication Critical patent/NL7005888A/xx
Application granted granted Critical
Publication of NL174684C publication Critical patent/NL174684C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/482—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes for individual devices provided for in groups H10D8/00 - H10D48/00, e.g. for power transistors
    • H10W20/484—Interconnections having extended contours, e.g. pads having mesh shape or interconnections comprising connected parallel stripes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
NLAANVRAGE7005888,A 1969-04-25 1970-04-23 Werkwijze voor het vervaardigen van een halfgeleiderinrichting omvattende het op een deel van een lichaam van halfgeleidermateriaal aanbrengen in een patroon van een laag van een metaal dat is gedoteerd met tenminste een de elektrische geleidingseigenschappen van het halfgeleidermateriaal wijzigende activator, het met handhaving van de maskerlaag aan een warmtebehandeling blootstellen van het halfgeleiderlichaam en de metaallaag, teneinde activatoratomen in het aan de metaallaag grenzende deel van het halfgeleiderlichaam te diffunderen en het aan de metaallaag bevestigen van een uitwendige aansluitgeleider. NL174684C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81918669A 1969-04-25 1969-04-25

Publications (2)

Publication Number Publication Date
NL7005888A true NL7005888A (https=) 1970-10-27
NL174684C NL174684C (nl) 1984-07-16

Family

ID=25227434

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7005888,A NL174684C (nl) 1969-04-25 1970-04-23 Werkwijze voor het vervaardigen van een halfgeleiderinrichting omvattende het op een deel van een lichaam van halfgeleidermateriaal aanbrengen in een patroon van een laag van een metaal dat is gedoteerd met tenminste een de elektrische geleidingseigenschappen van het halfgeleidermateriaal wijzigende activator, het met handhaving van de maskerlaag aan een warmtebehandeling blootstellen van het halfgeleiderlichaam en de metaallaag, teneinde activatoratomen in het aan de metaallaag grenzende deel van het halfgeleiderlichaam te diffunderen en het aan de metaallaag bevestigen van een uitwendige aansluitgeleider.

Country Status (9)

Country Link
US (1) US3601888A (https=)
JP (1) JPS5443352B1 (https=)
BE (1) BE749485A (https=)
DE (2) DE2019655C2 (https=)
FR (1) FR2049078B1 (https=)
GB (1) GB1317583A (https=)
IE (1) IE33752B1 (https=)
NL (1) NL174684C (https=)
SE (1) SE365343B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083349A1 (https=) * 1970-03-17 1971-12-17 Western Electric Co

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4050966A (en) * 1968-12-20 1977-09-27 Siemens Aktiengesellschaft Method for the preparation of diffused silicon semiconductor components
US3919007A (en) * 1969-08-12 1975-11-11 Kogyo Gijutsuin Method of manufacturing a field-effect transistor
US3863334A (en) * 1971-03-08 1975-02-04 Motorola Inc Aluminum-zinc metallization
JPS567304B2 (https=) * 1972-08-28 1981-02-17
US3909926A (en) * 1973-11-07 1975-10-07 Jearld L Hutson Method of fabricating a semiconductor diode having high voltage characteristics
JPS593421Y2 (ja) * 1979-05-31 1984-01-30 ソニー株式会社 テ−プカセツト
IE52791B1 (en) * 1980-11-05 1988-03-02 Fujitsu Ltd Semiconductor devices
US4481046A (en) * 1983-09-29 1984-11-06 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials
US4490193A (en) * 1983-09-29 1984-12-25 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
JPS60220975A (ja) * 1984-04-18 1985-11-05 Toshiba Corp ＧａＡｓ電界効果トランジスタ及びその製造方法
US5075756A (en) * 1990-02-12 1991-12-24 At&T Bell Laboratories Low resistance contacts to semiconductor materials
US6225218B1 (en) * 1995-12-20 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
KR100366046B1 (ko) * 2000-06-29 2002-12-27 삼성전자 주식회사 에벌란치 포토다이오드 제조방법
DE10315897B4 (de) * 2003-04-08 2005-03-10 Karlsruhe Forschzent Verfahren und Verwendung einer Vorrichtung zur Trennung von metallischen und halbleitenden Kohlenstoff-Nanoröhren
JP4914438B2 (ja) * 2005-05-17 2012-04-11 マックス−プランク−ゲゼルシャフト・ツア・フェルデルング・デア・ヴィッセンシャフテン・エー・ファオ 水素ベースのプラズマを用いた処理による材料の清浄化
US20080029854A1 (en) * 2006-08-03 2008-02-07 United Microelectronics Corp. Conductive shielding pattern and semiconductor structure with inductor device
US20140361407A1 (en) * 2013-06-05 2014-12-11 SCHMID Group Silicon material substrate doping method, structure and applications

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2817607A (en) * 1953-08-24 1957-12-24 Rca Corp Method of making semi-conductor bodies
US3169304A (en) * 1961-06-22 1965-02-16 Giannini Controls Corp Method of forming an ohmic semiconductor contact
US3206827A (en) * 1962-07-06 1965-09-21 Gen Instrument Corp Method of producing a semiconductor device
DE1514807B2 (de) * 1964-04-15 1971-09-02 Texas Instruments Inc., Dallas. Tex. (V.St.A.) Verfahren zum herstellen einer planaren halbleiteranordnung
US3382568A (en) * 1965-07-22 1968-05-14 Ibm Method for providing electrical connections to semiconductor devices
US3391035A (en) * 1965-08-20 1968-07-02 Westinghouse Electric Corp Method of making p-nu-junction devices by diffusion
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
JPS556287B1 (https=) * 1966-04-27 1980-02-15
DE1564608B2 (de) * 1966-05-23 1976-11-18 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines transistors
FR1531539A (fr) * 1966-05-23 1968-07-05 Siemens Ag Procédé de fabrication d'un transistor
US3403284A (en) * 1966-12-29 1968-09-24 Bell Telephone Labor Inc Target structure storage device using diode array

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2083349A1 (https=) * 1970-03-17 1971-12-17 Western Electric Co

Also Published As

Publication number Publication date
FR2049078B1 (https=) 1974-05-03
GB1317583A (en) 1973-05-23
US3601888A (en) 1971-08-31
DE2019655A1 (de) 1970-11-12
FR2049078A1 (https=) 1971-03-26
JPS5443352B1 (https=) 1979-12-19
NL174684C (nl) 1984-07-16
IE33752L (en) 1970-10-25
DE2019655C2 (de) 1982-05-06
SE365343B (https=) 1974-03-18
IE33752B1 (en) 1974-10-16
DE7015061U (de) 1972-01-05
BE749485A (fr) 1970-10-26

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee