FR2000029A1 - Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication - Google Patents
Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabricationInfo
- Publication number
- FR2000029A1 FR2000029A1 FR6900047A FR6900047A FR2000029A1 FR 2000029 A1 FR2000029 A1 FR 2000029A1 FR 6900047 A FR6900047 A FR 6900047A FR 6900047 A FR6900047 A FR 6900047A FR 2000029 A1 FR2000029 A1 FR 2000029A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- semiconductor devices
- ohmic contacts
- ohmic
- contacts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69564368A | 1968-01-04 | 1968-01-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2000029A1 true FR2000029A1 (fr) | 1969-08-29 |
FR2000029B3 FR2000029B3 (fr) | 1975-11-21 |
Family
ID=24793872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR6900047A Granted FR2000029A1 (fr) | 1968-01-04 | 1969-01-03 | Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication |
Country Status (2)
Country | Link |
---|---|
US (1) | US3551196A (fr) |
FR (1) | FR2000029A1 (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2058931A1 (de) * | 1970-12-01 | 1972-06-08 | Licentia Gmbh | Verfahren zum Kontaktieren von Halbleiterzonen Auswertung |
US3808069A (en) * | 1972-03-15 | 1974-04-30 | Bell Telephone Labor Inc | Forming windows in composite dielectric layers |
NL163370C (nl) * | 1972-04-28 | 1980-08-15 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon. |
US4240196A (en) * | 1978-12-29 | 1980-12-23 | Bell Telephone Laboratories, Incorporated | Fabrication of two-level polysilicon devices |
NL8600021A (nl) * | 1986-01-08 | 1987-08-03 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht. |
JP2000188400A (ja) * | 1998-11-09 | 2000-07-04 | Texas Instr Inc <Ti> | 半導体デバイスを形成する方法 |
-
1968
- 1968-01-04 US US695643A patent/US3551196A/en not_active Expired - Lifetime
-
1969
- 1969-01-03 FR FR6900047A patent/FR2000029A1/fr active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2000029B3 (fr) | 1975-11-21 |
US3551196A (en) | 1970-12-29 |
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