FR2000029B3 - - Google Patents

Info

Publication number
FR2000029B3
FR2000029B3 FR6900047A FR6900047A FR2000029B3 FR 2000029 B3 FR2000029 B3 FR 2000029B3 FR 6900047 A FR6900047 A FR 6900047A FR 6900047 A FR6900047 A FR 6900047A FR 2000029 B3 FR2000029 B3 FR 2000029B3
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR6900047A
Other versions
FR2000029A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Corning Glass Works
Original Assignee
Corning Glass Works
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Glass Works filed Critical Corning Glass Works
Publication of FR2000029A1 publication Critical patent/FR2000029A1/fr
Application granted granted Critical
Publication of FR2000029B3 publication Critical patent/FR2000029B3/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
FR6900047A 1968-01-04 1969-01-03 Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication Granted FR2000029A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69564368A 1968-01-04 1968-01-04

Publications (2)

Publication Number Publication Date
FR2000029A1 FR2000029A1 (fr) 1969-08-29
FR2000029B3 true FR2000029B3 (fr) 1975-11-21

Family

ID=24793872

Family Applications (1)

Application Number Title Priority Date Filing Date
FR6900047A Granted FR2000029A1 (fr) 1968-01-04 1969-01-03 Contacts ohmiques pour dispositifs a semi-conducteurs et leur procede de fabrication

Country Status (2)

Country Link
US (1) US3551196A (fr)
FR (1) FR2000029A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2058931A1 (de) * 1970-12-01 1972-06-08 Licentia Gmbh Verfahren zum Kontaktieren von Halbleiterzonen Auswertung
US3808069A (en) * 1972-03-15 1974-04-30 Bell Telephone Labor Inc Forming windows in composite dielectric layers
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US4240196A (en) * 1978-12-29 1980-12-23 Bell Telephone Laboratories, Incorporated Fabrication of two-level polysilicon devices
NL8600021A (nl) * 1986-01-08 1987-08-03 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij op een halfgeleiderlichaam een metallisatie met een dikke aansluitelektrode wordt aangebracht.
JP2000188400A (ja) * 1998-11-09 2000-07-04 Texas Instr Inc <Ti> 半導体デバイスを形成する方法

Also Published As

Publication number Publication date
FR2000029A1 (fr) 1969-08-29
US3551196A (en) 1970-12-29

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