FR2340619A1 - Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus - Google Patents
Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenusInfo
- Publication number
- FR2340619A1 FR2340619A1 FR7603093A FR7603093A FR2340619A1 FR 2340619 A1 FR2340619 A1 FR 2340619A1 FR 7603093 A FR7603093 A FR 7603093A FR 7603093 A FR7603093 A FR 7603093A FR 2340619 A1 FR2340619 A1 FR 2340619A1
- Authority
- FR
- France
- Prior art keywords
- devices
- improvement
- manufacturing process
- semiconductor devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32131—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only
- H01L21/32132—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by physical means only of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7603093A FR2340619A1 (fr) | 1976-02-04 | 1976-02-04 | Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus |
GB4004/77A GB1572768A (en) | 1976-02-04 | 1977-02-01 | Semiconductor devices |
US05/764,591 US4124934A (en) | 1976-02-04 | 1977-02-01 | Manufacture of semiconductor devices in which a doping impurity is diffused from a polycrystalline semiconductor layer into an underlying monocrystalline semiconductor material, and semiconductor devices thus manufactured |
DE19772704413 DE2704413A1 (de) | 1976-02-04 | 1977-02-03 | Verfahren zur herstellung von halbleiteranordnungen, bei dem eine dotierungsverunreinigung aus einer polykristallinen halbleiterschicht in ein unterliegendes einkristallines halbleitermaterial eindiffundiert wird |
JP52010295A JPS5846051B2 (ja) | 1976-02-04 | 1977-02-03 | 半導体装置の製造方法 |
CA271,098A CA1075371A (fr) | 1976-02-04 | 1977-02-04 | Methode de diffusion pour semiconducteur |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7603093A FR2340619A1 (fr) | 1976-02-04 | 1976-02-04 | Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2340619A1 true FR2340619A1 (fr) | 1977-09-02 |
FR2340619B1 FR2340619B1 (fr) | 1978-08-18 |
Family
ID=9168752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7603093A Granted FR2340619A1 (fr) | 1976-02-04 | 1976-02-04 | Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus |
Country Status (6)
Country | Link |
---|---|
US (1) | US4124934A (fr) |
JP (1) | JPS5846051B2 (fr) |
CA (1) | CA1075371A (fr) |
DE (1) | DE2704413A1 (fr) |
FR (1) | FR2340619A1 (fr) |
GB (1) | GB1572768A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2428324A1 (fr) * | 1978-06-06 | 1980-01-04 | Rockwell International Corp | Circuits integres a tres grande echelle et leur procede de realisation par alignement automatique de contacts |
FR2466101A1 (fr) * | 1979-09-18 | 1981-03-27 | Thomson Csf | Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6043656B2 (ja) * | 1979-06-06 | 1985-09-30 | 株式会社東芝 | 半導体装置の製造方法 |
US4291322A (en) * | 1979-07-30 | 1981-09-22 | Bell Telephone Laboratories, Incorporated | Structure for shallow junction MOS circuits |
JPS56160034A (en) * | 1980-05-14 | 1981-12-09 | Fujitsu Ltd | Impurity diffusion |
JPS57102070A (en) * | 1980-12-17 | 1982-06-24 | Nec Corp | Semiconductor device |
JPS57184217A (en) * | 1981-05-08 | 1982-11-12 | Fujitsu Ltd | Manufacture of semiconductor device |
US4888297A (en) * | 1982-09-20 | 1989-12-19 | International Business Machines Corporation | Process for making a contact structure including polysilicon and metal alloys |
JPS59124717A (ja) * | 1982-12-31 | 1984-07-18 | Rohm Co Ltd | ポリシリコン電極形成方法 |
US5242844A (en) * | 1983-12-23 | 1993-09-07 | Sony Corporation | Semiconductor device with polycrystalline silicon active region and method of fabrication thereof |
US4512073A (en) * | 1984-02-23 | 1985-04-23 | Rca Corporation | Method of forming self-aligned contact openings |
US4609568A (en) * | 1984-07-27 | 1986-09-02 | Fairchild Camera & Instrument Corporation | Self-aligned metal silicide process for integrated circuits having self-aligned polycrystalline silicon electrodes |
US4589928A (en) * | 1984-08-21 | 1986-05-20 | At&T Bell Laboratories | Method of making semiconductor integrated circuits having backside gettered with phosphorus |
US5045916A (en) * | 1985-01-22 | 1991-09-03 | Fairchild Semiconductor Corporation | Extended silicide and external contact technology |
US5227316A (en) * | 1985-01-22 | 1993-07-13 | National Semiconductor Corporation | Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size |
US5061986A (en) * | 1985-01-22 | 1991-10-29 | National Semiconductor Corporation | Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics |
JPH0658912B2 (ja) * | 1985-05-07 | 1994-08-03 | 日本電信電話株式会社 | バイポーラトランジスタの製造方法 |
US5270224A (en) * | 1988-03-11 | 1993-12-14 | Fujitsu Limited | Method of manufacturing a semiconductor device having a region doped to a level exceeding the solubility limit |
US5518937A (en) * | 1988-03-11 | 1996-05-21 | Fujitsu Limited | Semiconductor device having a region doped to a level exceeding the solubility limit |
US5246877A (en) * | 1989-01-31 | 1993-09-21 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor device having a polycrystalline electrode region |
TW466758B (en) * | 1998-10-26 | 2001-12-01 | United Microelectronics Corp | Manufacturing method of flash memory |
US20050118802A1 (en) * | 2003-12-02 | 2005-06-02 | Chang-Sheng Tsao | Method for implementing poly pre-doping in deep sub-micron process |
WO2006125825A2 (fr) * | 2005-05-27 | 2006-11-30 | The Provost Fellows And Scholars Of The College Of The Holy And Undivided Trinity Of Queen Elizabeth Near Dublin | Procede de formation de nanofils conducteurs |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3664896A (en) * | 1969-07-28 | 1972-05-23 | David M Duncan | Deposited silicon diffusion sources |
JPS4939389A (fr) * | 1972-08-14 | 1974-04-12 | ||
DE2315710C3 (de) * | 1973-03-29 | 1975-11-13 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen einer Halbleiteranordnung |
US3864217A (en) * | 1974-01-21 | 1975-02-04 | Nippon Electric Co | Method of fabricating a semiconductor device |
US3912557A (en) * | 1974-05-02 | 1975-10-14 | Trw Inc | Method for fabricating planar semiconductor devices |
JPS511586A (ja) * | 1974-06-26 | 1976-01-08 | Toyo Kogyo Co | Kariugomutokinzokutono setsuchakuhoho |
US3918149A (en) * | 1974-06-28 | 1975-11-11 | Intel Corp | Al/Si metallization process |
-
1976
- 1976-02-04 FR FR7603093A patent/FR2340619A1/fr active Granted
-
1977
- 1977-02-01 US US05/764,591 patent/US4124934A/en not_active Expired - Lifetime
- 1977-02-01 GB GB4004/77A patent/GB1572768A/en not_active Expired
- 1977-02-03 JP JP52010295A patent/JPS5846051B2/ja not_active Expired
- 1977-02-03 DE DE19772704413 patent/DE2704413A1/de not_active Withdrawn
- 1977-02-04 CA CA271,098A patent/CA1075371A/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2428324A1 (fr) * | 1978-06-06 | 1980-01-04 | Rockwell International Corp | Circuits integres a tres grande echelle et leur procede de realisation par alignement automatique de contacts |
FR2466101A1 (fr) * | 1979-09-18 | 1981-03-27 | Thomson Csf | Procede de formation de couches de silicium polycristallin localisees sur des zones recouvertes de silice d'une plaquette de silicium et application a la fabrication d'un transistor mos non plan autoaligne |
EP0026686A1 (fr) * | 1979-09-18 | 1981-04-08 | Thomson-Csf | Procédé de fabrication de couches de silicium polycristallin localisées sur des zones recouvertes de silice d'une plaquette de silicium, et application à la fabrication d'un transistor MOS non plan auto-aligné |
Also Published As
Publication number | Publication date |
---|---|
JPS5294781A (en) | 1977-08-09 |
US4124934A (en) | 1978-11-14 |
DE2704413A1 (de) | 1977-08-11 |
JPS5846051B2 (ja) | 1983-10-14 |
GB1572768A (en) | 1980-08-06 |
FR2340619B1 (fr) | 1978-08-18 |
CA1075371A (fr) | 1980-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2340619A1 (fr) | Perfectionnement au procede de fabrication de dispositifs semiconducteurs et dispositifs ainsi obtenus | |
FR2280979A1 (fr) | Structure de semi-conducteur et procede de fabrication | |
FR2345814A1 (fr) | Dispositifs semiconducteurs et leur fabrication | |
FR2326038A1 (fr) | Procede de fabrication de circuits integres auto-alignes et dispositifs en resultant | |
BE842511A (fr) | Dispositif semi-conducteur et son procede de fabrication | |
FR2309036A1 (fr) | Dispositif semiconducteur et son procede de fabrication | |
BE769731A (fr) | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu | |
IT1114884B (it) | Procedimento di fabbricazione di dispositivi semiconduttori | |
BR7203232D0 (pt) | Um dispositivo semicondutor e processo de fabricacao do mesmo | |
BR7605354A (pt) | Conjunto semicondutor encapsulado e passivado e processo de fabrica-lo | |
PL200127A1 (pl) | Sposob wytwarzania przyrzadu polprzewodnikowego | |
BE752897A (fr) | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu | |
FR2339954A1 (fr) | Procede de fabrication de dispositifs mos | |
FR2319978A1 (fr) | Circuits integres semi-conducteurs et procede de preparation | |
BR7705750A (pt) | Processo de fabricacao de um dispositivo semicondutor e dispositivo semicondutor fabricado pelo processo | |
BR7705488A (pt) | Dispositivo semicondutor | |
FR2463509B1 (fr) | Procede de fabrication de dispositifs semi-conducteurs et dispositifs obtenus par ce procede | |
BE769732A (fr) | Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur ainsi obtenu | |
BR7702421A (pt) | Transdutor semicondutor | |
BR6914217D0 (pt) | Estrutura semicondutora e processo de sua fabricacao | |
FR2334205A1 (fr) | Dispositif semi-conducteur et son procede de fabrication | |
GB1553730A (en) | Semiconductor device and method of manufacturing the same | |
BE758662A (fr) | Fabrication de sirops d'oligo-glucosylfructoses | |
FR2308199A1 (fr) | Procede de fabrication de composants semi-conducteurs et composants obtenus | |
FR2293798A1 (fr) | Procede pour la fabrication de diamants semi-conducteurs perfectionnes, et diamants ainsi obtenus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
CA | Change of address | ||
CD | Change of name or company name | ||
ST | Notification of lapse |