FR2345814A1 - Dispositifs semiconducteurs et leur fabrication - Google Patents
Dispositifs semiconducteurs et leur fabricationInfo
- Publication number
- FR2345814A1 FR2345814A1 FR7708682A FR7708682A FR2345814A1 FR 2345814 A1 FR2345814 A1 FR 2345814A1 FR 7708682 A FR7708682 A FR 7708682A FR 7708682 A FR7708682 A FR 7708682A FR 2345814 A1 FR2345814 A1 FR 2345814A1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/7606—Transistor-like structures, e.g. hot electron transistor [HET]; metal base transistor [MBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8618—Diodes with bulk potential barrier, e.g. Camel diodes, Planar Doped Barrier diodes, Graded bandgap diodes
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB11835/76A GB1573309A (en) | 1976-03-24 | 1976-03-24 | Semiconductor devices and their manufacture |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2345814A1 true FR2345814A1 (fr) | 1977-10-21 |
FR2345814B1 FR2345814B1 (fr) | 1983-07-22 |
Family
ID=9993593
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7708682A Granted FR2345814A1 (fr) | 1976-03-24 | 1977-03-23 | Dispositifs semiconducteurs et leur fabrication |
Country Status (6)
Country | Link |
---|---|
US (1) | US4149174A (fr) |
JP (1) | JPS5938742B2 (fr) |
CA (1) | CA1078073A (fr) |
DE (1) | DE2711562C3 (fr) |
FR (1) | FR2345814A1 (fr) |
GB (1) | GB1573309A (fr) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0094129A2 (fr) * | 1982-05-10 | 1983-11-16 | Philips Electronics Uk Limited | Dispositifs semi-conducteurs comportant des transistors unipolaires à porteurs chauds et procédé de fabrication |
EP0099979A2 (fr) * | 1982-07-26 | 1984-02-08 | LGZ LANDIS & GYR ZUG AG | Détecteur de champ magnétique et son application |
EP0106254A2 (fr) * | 1982-10-08 | 1984-04-25 | Siemens Aktiengesellschaft | Transistor à barrière d'énergie ajustable et son application |
EP0216380A2 (fr) * | 1985-09-26 | 1987-04-01 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur ayant une électrode à structure de plaque de champ |
EP0235248A1 (fr) * | 1985-07-12 | 1987-09-09 | Hewlett Packard Co | Diode detectrice/melangeuse fonctionnant avec une tension de polarisation zero et son procede de fabrication. |
WO2000062346A1 (fr) * | 1999-04-08 | 2000-10-19 | Koninklijke Philips Electronics N.V. | Diode a effet de claquage et son procede de fabrication |
EP2284890A1 (fr) * | 2009-07-31 | 2011-02-16 | Infineon Technologies AG | Élément de protection contre les décharges électrostatiques et puce de protection contre les décharges électrostatiques et procédé de production correspondant |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5378788A (en) * | 1976-12-23 | 1978-07-12 | Hitachi Ltd | Temperature-compensation-type constant voltage element |
DE2800820A1 (de) * | 1978-01-10 | 1979-09-27 | Hermann Dr Ing Mader | Halbleiter-diode |
US4373166A (en) * | 1978-12-20 | 1983-02-08 | Ibm Corporation | Schottky Barrier diode with controlled characteristics |
US4357178A (en) * | 1978-12-20 | 1982-11-02 | Ibm Corporation | Schottky barrier diode with controlled characteristics and fabrication method |
FR2460040A1 (fr) * | 1979-06-22 | 1981-01-16 | Thomson Csf | Procede pour realiser une diode schottky a tenue en tension amelioree |
GB2056166B (en) * | 1979-08-08 | 1983-09-14 | Philips Electronic Associated | Hot-electron or hot-hole transistor |
US4260431A (en) * | 1979-12-21 | 1981-04-07 | Harris Corporation | Method of making Schottky barrier diode by ion implantation and impurity diffusion |
US4353081A (en) * | 1980-01-29 | 1982-10-05 | Bell Telephone Laboratories, Incorporated | Graded bandgap rectifying semiconductor devices |
JPS56133867A (en) * | 1980-03-21 | 1981-10-20 | Semiconductor Res Found | Thermoelectric emission transistor |
JPS5775464A (en) * | 1980-10-28 | 1982-05-12 | Semiconductor Res Found | Semiconductor device controlled by tunnel injection |
NL8103376A (nl) * | 1981-07-16 | 1983-02-16 | Philips Nv | Weergeefinrichting. |
US4544939A (en) * | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
US4449140A (en) * | 1981-12-24 | 1984-05-15 | National Research Development Corporation | Semi-conductor barrier switching devices |
US4829349A (en) * | 1983-06-30 | 1989-05-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Transistor having voltage-controlled thermionic emission |
GB2151843A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
GB2151844A (en) * | 1983-12-20 | 1985-07-24 | Philips Electronic Associated | Semiconductor devices |
US5214297A (en) * | 1984-11-19 | 1993-05-25 | Fujitsu Limited | High-speed semiconductor device |
DE3708474A1 (de) * | 1987-03-16 | 1988-09-29 | Licentia Gmbh | Majoritaetstraeger-halbleiterbauelement und verfahren zu seiner herstellung |
NL8701497A (nl) * | 1987-06-26 | 1989-01-16 | Philips Nv | Halfgeleiderinrichting voor het opwekken van electromagnetische straling. |
US4847666A (en) * | 1987-12-17 | 1989-07-11 | General Motors Corporation | Hot electron transistors |
JP2731089B2 (ja) * | 1991-10-02 | 1998-03-25 | 三菱電機株式会社 | 高速動作半導体装置およびその製造方法 |
US5258640A (en) * | 1992-09-02 | 1993-11-02 | International Business Machines Corporation | Gate controlled Schottky barrier diode |
US5329151A (en) * | 1993-04-09 | 1994-07-12 | At&T Bell Laboratories | Semiconductor diode |
US7397102B2 (en) * | 2005-04-20 | 2008-07-08 | Taurus Micropower, Inc. | Junction barrier schottky with low forward drop and improved reverse block voltage |
US7057256B2 (en) | 2001-05-25 | 2006-06-06 | President & Fellows Of Harvard College | Silicon-based visible and near-infrared optoelectric devices |
US7442629B2 (en) | 2004-09-24 | 2008-10-28 | President & Fellows Of Harvard College | Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate |
FR2832547A1 (fr) * | 2001-11-21 | 2003-05-23 | St Microelectronics Sa | Procede de realisation d'une diode schottky sur substrat de carbure de silicium |
US7057220B2 (en) * | 2003-10-09 | 2006-06-06 | Micron Technology, Inc. | Ultrashallow photodiode using indium |
US7649496B1 (en) * | 2004-10-12 | 2010-01-19 | Guy Silver | EM rectifying antenna suitable for use in conjunction with a natural breakdown device |
US7847315B2 (en) * | 2007-03-09 | 2010-12-07 | Diodes Fabtech Inc. | High efficiency rectifier |
US8212327B2 (en) * | 2008-03-06 | 2012-07-03 | Sionyx, Inc. | High fill-factor laser-treated semiconductor device on bulk material with single side contact scheme |
US9673243B2 (en) | 2009-09-17 | 2017-06-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US9911781B2 (en) | 2009-09-17 | 2018-03-06 | Sionyx, Llc | Photosensitive imaging devices and associated methods |
US8692198B2 (en) | 2010-04-21 | 2014-04-08 | Sionyx, Inc. | Photosensitive imaging devices and associated methods |
EP2583312A2 (fr) | 2010-06-18 | 2013-04-24 | Sionyx, Inc. | Dispositifs photosensibles à grande vitesse et procédés associés |
US9496308B2 (en) | 2011-06-09 | 2016-11-15 | Sionyx, Llc | Process module for increasing the response of backside illuminated photosensitive imagers and associated methods |
JP2014525091A (ja) | 2011-07-13 | 2014-09-25 | サイオニクス、インク. | 生体撮像装置および関連方法 |
US9064764B2 (en) | 2012-03-22 | 2015-06-23 | Sionyx, Inc. | Pixel isolation elements, devices, and associated methods |
JP6466346B2 (ja) | 2013-02-15 | 2019-02-06 | サイオニクス、エルエルシー | アンチブルーミング特性を有するハイダイナミックレンジcmos画像センサおよび関連づけられた方法 |
US9939251B2 (en) | 2013-03-15 | 2018-04-10 | Sionyx, Llc | Three dimensional imaging utilizing stacked imager devices and associated methods |
WO2014209421A1 (fr) | 2013-06-29 | 2014-12-31 | Sionyx, Inc. | Régions texturées formées de tranchées peu profondes et procédés associés. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
US3488527A (en) * | 1967-09-05 | 1970-01-06 | Fairchild Camera Instr Co | Punch-through,microwave negativeresistance device |
US3814993A (en) * | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
FR2266307A1 (fr) * | 1974-03-28 | 1975-10-24 | Sony Corp | |
US3943552A (en) * | 1973-06-26 | 1976-03-09 | U.S. Philips Corporation | Semiconductor devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3615929A (en) * | 1965-07-08 | 1971-10-26 | Texas Instruments Inc | Method of forming epitaxial region of predetermined thickness and article of manufacture |
US3458781A (en) * | 1966-07-18 | 1969-07-29 | Unitrode Corp | High-voltage planar semiconductor devices |
US3823352A (en) * | 1972-12-13 | 1974-07-09 | Bell Telephone Labor Inc | Field effect transistor structures and methods |
US3940783A (en) * | 1974-02-11 | 1976-02-24 | Signetics Corporation | Majority carriers-variable threshold rectifier and/or voltage reference semiconductor structure |
US3964084A (en) * | 1974-06-12 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Schottky barrier diode contacts |
-
1976
- 1976-03-24 GB GB11835/76A patent/GB1573309A/en not_active Expired
-
1977
- 1977-03-14 CA CA273,880A patent/CA1078073A/fr not_active Expired
- 1977-03-17 DE DE2711562A patent/DE2711562C3/de not_active Expired
- 1977-03-22 US US05/780,004 patent/US4149174A/en not_active Expired - Lifetime
- 1977-03-23 FR FR7708682A patent/FR2345814A1/fr active Granted
-
1982
- 1982-01-06 JP JP57000448A patent/JPS5938742B2/ja not_active Expired
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
US3488527A (en) * | 1967-09-05 | 1970-01-06 | Fairchild Camera Instr Co | Punch-through,microwave negativeresistance device |
US3814993A (en) * | 1972-11-15 | 1974-06-04 | Us Navy | Tuneable infrared photocathode |
US3943552A (en) * | 1973-06-26 | 1976-03-09 | U.S. Philips Corporation | Semiconductor devices |
FR2266307A1 (fr) * | 1974-03-28 | 1975-10-24 | Sony Corp |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0094129A2 (fr) * | 1982-05-10 | 1983-11-16 | Philips Electronics Uk Limited | Dispositifs semi-conducteurs comportant des transistors unipolaires à porteurs chauds et procédé de fabrication |
EP0094129A3 (en) * | 1982-05-10 | 1987-01-28 | Philips Electronic And Associated Industries Limited | Semiconductor devices comprising unipolar hot-carrier transistors and methods of manufacturing the same |
EP0099979A2 (fr) * | 1982-07-26 | 1984-02-08 | LGZ LANDIS & GYR ZUG AG | Détecteur de champ magnétique et son application |
EP0099979A3 (en) * | 1982-07-26 | 1984-09-26 | Lgz Landis & Gyr Zug Ag | Magnetic field sensor |
EP0106254A2 (fr) * | 1982-10-08 | 1984-04-25 | Siemens Aktiengesellschaft | Transistor à barrière d'énergie ajustable et son application |
EP0106254A3 (fr) * | 1982-10-08 | 1986-12-10 | Siemens Aktiengesellschaft | Transistor à barrière d'énergie ajustable et son application |
EP0235248A4 (fr) * | 1985-07-12 | 1988-01-21 | Hewlett Packard Co | Diode detectrice/melangeuse fonctionnant avec une tension de polarisation zero et son procede de fabrication. |
EP0235248A1 (fr) * | 1985-07-12 | 1987-09-09 | Hewlett Packard Co | Diode detectrice/melangeuse fonctionnant avec une tension de polarisation zero et son procede de fabrication. |
EP0216380A3 (en) * | 1985-09-26 | 1987-12-09 | Kabushiki Kaisha Toshiba | Semiconductor device with a field plate electrode structure |
EP0216380A2 (fr) * | 1985-09-26 | 1987-04-01 | Kabushiki Kaisha Toshiba | Dispositif semi-conducteur ayant une électrode à structure de plaque de champ |
WO2000062346A1 (fr) * | 1999-04-08 | 2000-10-19 | Koninklijke Philips Electronics N.V. | Diode a effet de claquage et son procede de fabrication |
EP2284890A1 (fr) * | 2009-07-31 | 2011-02-16 | Infineon Technologies AG | Élément de protection contre les décharges électrostatiques et puce de protection contre les décharges électrostatiques et procédé de production correspondant |
US8530968B2 (en) | 2009-07-31 | 2013-09-10 | Infineon Technologies Ag | Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same |
US8946823B2 (en) | 2009-07-31 | 2015-02-03 | Infineon Technologies Ag | Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
JPS589366A (ja) | 1983-01-19 |
DE2711562C3 (de) | 1981-08-27 |
JPS5938742B2 (ja) | 1984-09-19 |
DE2711562B2 (de) | 1980-12-18 |
CA1078073A (fr) | 1980-05-20 |
FR2345814B1 (fr) | 1983-07-22 |
GB1573309A (en) | 1980-08-20 |
DE2711562A1 (de) | 1977-09-29 |
US4149174A (en) | 1979-04-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name | ||
ST | Notification of lapse |