SE424786B - Halvledaranordning i form av en skivformad halvledartablett - Google Patents
Halvledaranordning i form av en skivformad halvledartablettInfo
- Publication number
- SE424786B SE424786B SE7704781A SE7704781A SE424786B SE 424786 B SE424786 B SE 424786B SE 7704781 A SE7704781 A SE 7704781A SE 7704781 A SE7704781 A SE 7704781A SE 424786 B SE424786 B SE 424786B
- Authority
- SE
- Sweden
- Prior art keywords
- disk
- tablet
- semiconductor device
- semiconductor
- shaped
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/028—Dicing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Formation Of Insulating Films (AREA)
- Dicing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51049008A JPS584814B2 (ja) | 1976-04-27 | 1976-04-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7704781L SE7704781L (sv) | 1977-10-28 |
SE424786B true SE424786B (sv) | 1982-08-09 |
Family
ID=12819123
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7704781A SE424786B (sv) | 1976-04-27 | 1977-04-26 | Halvledaranordning i form av en skivformad halvledartablett |
Country Status (4)
Country | Link |
---|---|
US (1) | US4259682A (sv) |
JP (1) | JPS584814B2 (sv) |
DE (1) | DE2718773C2 (sv) |
SE (1) | SE424786B (sv) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56103447A (en) * | 1980-01-22 | 1981-08-18 | Toshiba Corp | Dicing method of semiconductor wafer |
JPS56132763U (sv) * | 1980-03-06 | 1981-10-08 | ||
JPS5752125A (en) * | 1980-09-16 | 1982-03-27 | Nec Corp | Mesa structure semiconductor device |
DE3137675A1 (de) * | 1981-09-22 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit einem mehrschichten-halbleiterkoerper und verfahren zu seiner herstellung |
DE3151141A1 (de) * | 1981-12-23 | 1983-06-30 | Siemens AG, 1000 Berlin und 8000 München | Halbleiterbauelement mit hoher stossstrombelastbarkeit |
DE3435306A1 (de) * | 1984-09-26 | 1986-04-03 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von laserdioden mit jutierter integrierter waermesenke |
US4814296A (en) * | 1987-08-28 | 1989-03-21 | Xerox Corporation | Method of fabricating image sensor dies for use in assembling arrays |
US5136354A (en) * | 1989-04-13 | 1992-08-04 | Seiko Epson Corporation | Semiconductor device wafer with interlayer insulating film covering the scribe lines |
US5414297A (en) * | 1989-04-13 | 1995-05-09 | Seiko Epson Corporation | Semiconductor device chip with interlayer insulating film covering the scribe lines |
US5017512A (en) * | 1989-07-27 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Wafer having a dicing area having a step region covered with a conductive layer and method of manufacturing the same |
US5451550A (en) * | 1991-02-20 | 1995-09-19 | Texas Instruments Incorporated | Method of laser CVD seal a die edge |
US5610434A (en) * | 1995-11-07 | 1997-03-11 | General Instrument Corporation Of Delaware | Mesa semiconductor structure |
US6881611B1 (en) | 1996-07-12 | 2005-04-19 | Fujitsu Limited | Method and mold for manufacturing semiconductor device, semiconductor device and method for mounting the device |
JP3507274B2 (ja) * | 1997-03-31 | 2004-03-15 | 三洋電機株式会社 | マザーガラス基板およびその製造方法 |
US6235612B1 (en) * | 1998-06-10 | 2001-05-22 | Texas Instruments Incorporated | Edge bond pads on integrated circuits |
JP2001102486A (ja) * | 1999-07-28 | 2001-04-13 | Seiko Epson Corp | 半導体装置用基板、半導体チップ搭載基板、半導体装置及びその製造方法、回路基板並びに電子機器 |
US6312805B1 (en) | 2000-02-11 | 2001-11-06 | E.I. Du Pont De Nemours And Company | Cationic dyeability modifier for use with polyester and polyamide |
DE10062014B4 (de) * | 2000-12-13 | 2006-03-09 | Infineon Technologies Ag | Verfahren zum Dünnen und Separieren selektierter Bereiche dünner Scheiben |
DE10129346B4 (de) * | 2001-06-19 | 2006-08-31 | Infineon Technologies Ag | Verfahren zur Herstellung eines Halbleiterbauelementes |
DE10224164B4 (de) * | 2002-05-31 | 2007-05-10 | Advanced Micro Devices, Inc., Sunnyvale | Eine zweidimensionale Struktur zum Bestimmen einer Überlagerungsgenauigkeit mittels Streuungsmessung |
US7112470B2 (en) * | 2004-09-15 | 2006-09-26 | International Business Machines Corporation | Chip dicing |
CN105453250A (zh) * | 2013-08-08 | 2016-03-30 | 夏普株式会社 | 半导体元件衬底及其制造方法 |
JP6631538B2 (ja) * | 2014-12-09 | 2020-01-15 | コニカミノルタ株式会社 | 検出チップおよび検出方法 |
CN107561053B (zh) * | 2016-07-01 | 2020-04-28 | 清华大学 | 一种单分子检测方法 |
CN107561052B (zh) * | 2016-07-01 | 2020-04-28 | 清华大学 | 一种用于单分子检测的分子载体的制备方法 |
CN107561051A (zh) * | 2016-07-01 | 2018-01-09 | 清华大学 | 一种用于单分子检测的分子载体 |
CN108072640B (zh) * | 2016-11-14 | 2020-01-07 | 清华大学 | 一种单分子检测装置以及单分子检测方法 |
CN109470676A (zh) * | 2017-09-08 | 2019-03-15 | 清华大学 | 用于分子检测的分子载体 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3806771A (en) * | 1969-05-05 | 1974-04-23 | Gen Electric | Smoothly beveled semiconductor device with thick glass passivant |
US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
US3608186A (en) * | 1969-10-30 | 1971-09-28 | Jearld L Hutson | Semiconductor device manufacture with junction passivation |
US3735483A (en) * | 1970-03-20 | 1973-05-29 | Gen Electric | Semiconductor passivating process |
US3801390A (en) * | 1970-12-28 | 1974-04-02 | Bell Telephone Labor Inc | Preparation of high resolution shadow masks |
US3821782A (en) * | 1971-01-14 | 1974-06-28 | J Hutson | High voltage semiconductor device with plural grooves |
DE2224159C3 (de) * | 1972-05-18 | 1980-02-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Mikrowellendiode |
US3972113A (en) * | 1973-05-14 | 1976-08-03 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
JPS5317391B2 (sv) * | 1973-05-14 | 1978-06-08 | ||
FR2253277B1 (sv) * | 1973-11-30 | 1977-08-12 | Silec Semi Conducteurs | |
JPS5718348B2 (sv) * | 1974-06-07 | 1982-04-16 | ||
US3997964A (en) * | 1974-09-30 | 1976-12-21 | General Electric Company | Premature breakage resistant semiconductor wafer and method for the manufacture thereof |
US4063272A (en) * | 1975-11-26 | 1977-12-13 | General Electric Company | Semiconductor device and method of manufacture thereof |
-
1976
- 1976-04-27 JP JP51049008A patent/JPS584814B2/ja not_active Expired
-
1977
- 1977-04-26 SE SE7704781A patent/SE424786B/sv not_active IP Right Cessation
- 1977-04-27 DE DE2718773A patent/DE2718773C2/de not_active Expired
-
1978
- 1978-09-28 US US05/946,828 patent/US4259682A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS52131463A (en) | 1977-11-04 |
DE2718773A1 (de) | 1977-11-17 |
US4259682A (en) | 1981-03-31 |
JPS584814B2 (ja) | 1983-01-27 |
DE2718773C2 (de) | 1984-05-10 |
SE7704781L (sv) | 1977-10-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
NUG | Patent has lapsed |
Ref document number: 7704781-9 Effective date: 19941110 Format of ref document f/p: F |