FR2296939A1 - Dispositif semi-conducteur a quatre zones - Google Patents

Dispositif semi-conducteur a quatre zones

Info

Publication number
FR2296939A1
FR2296939A1 FR7600060A FR7600060A FR2296939A1 FR 2296939 A1 FR2296939 A1 FR 2296939A1 FR 7600060 A FR7600060 A FR 7600060A FR 7600060 A FR7600060 A FR 7600060A FR 2296939 A1 FR2296939 A1 FR 2296939A1
Authority
FR
France
Prior art keywords
semiconductor device
zone semiconductor
zone
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7600060A
Other languages
English (en)
Other versions
FR2296939B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
National Cash Register Co
Original Assignee
NCR Corp
National Cash Register Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp, National Cash Register Co filed Critical NCR Corp
Publication of FR2296939A1 publication Critical patent/FR2296939A1/fr
Application granted granted Critical
Publication of FR2296939B1 publication Critical patent/FR2296939B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
    • H01L29/742—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a field effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Read Only Memory (AREA)
  • Thyristors (AREA)
FR7600060A 1975-01-06 1976-01-05 Dispositif semi-conducteur a quatre zones Granted FR2296939A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US53866275A 1975-01-06 1975-01-06

Publications (2)

Publication Number Publication Date
FR2296939A1 true FR2296939A1 (fr) 1976-07-30
FR2296939B1 FR2296939B1 (fr) 1978-06-30

Family

ID=24147887

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7600060A Granted FR2296939A1 (fr) 1975-01-06 1976-01-05 Dispositif semi-conducteur a quatre zones

Country Status (5)

Country Link
JP (1) JPS5193680A (fr)
DE (1) DE2558626A1 (fr)
FR (1) FR2296939A1 (fr)
GB (1) GB1480201A (fr)
NL (1) NL7600049A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055182A2 (fr) * 1980-12-24 1982-06-30 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Cellule et système de mémoire non volatile rapide et électriquement altérable
WO1986007487A1 (fr) * 1985-06-07 1986-12-18 Anamartic Limited Elements de memoire de donnees electriques

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5574168A (en) * 1978-11-28 1980-06-04 Oki Electric Ind Co Ltd Pnpn switch
JPS59211271A (ja) * 1983-05-17 1984-11-30 Toshiba Corp 半導体装置
JPS59213167A (ja) * 1983-05-19 1984-12-03 Nec Corp サイリスタ
US7224002B2 (en) * 2004-05-06 2007-05-29 Micron Technology, Inc. Silicon on insulator read-write non-volatile memory comprising lateral thyristor and trapping layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4949581A (fr) * 1972-09-16 1974-05-14

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0055182A2 (fr) * 1980-12-24 1982-06-30 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Cellule et système de mémoire non volatile rapide et électriquement altérable
EP0055182A3 (en) * 1980-12-24 1983-06-22 Fairchild Camera & Instrument Corporation High speed nonvolatile electrically erasable memory cell and system
EP0176111A1 (fr) * 1980-12-24 1986-04-02 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Système de mémoire rapide non-volatile, électriquement effaçable
WO1986007487A1 (fr) * 1985-06-07 1986-12-18 Anamartic Limited Elements de memoire de donnees electriques
US4882706A (en) * 1985-06-07 1989-11-21 Anamartic Limited Data storage element and memory structures employing same

Also Published As

Publication number Publication date
NL7600049A (nl) 1976-07-08
DE2558626A1 (de) 1976-07-08
FR2296939B1 (fr) 1978-06-30
JPS5193680A (en) 1976-08-17
GB1480201A (en) 1977-07-20

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Legal Events

Date Code Title Description
ST Notification of lapse