AU2003287545A1 - Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor - Google Patents

Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor

Info

Publication number
AU2003287545A1
AU2003287545A1 AU2003287545A AU2003287545A AU2003287545A1 AU 2003287545 A1 AU2003287545 A1 AU 2003287545A1 AU 2003287545 A AU2003287545 A AU 2003287545A AU 2003287545 A AU2003287545 A AU 2003287545A AU 2003287545 A1 AU2003287545 A1 AU 2003287545A1
Authority
AU
Australia
Prior art keywords
electrochemical
chemical deposition
methods therefor
plating solutions
copper interconnects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003287545A
Other languages
English (en)
Inventor
Steven D. Boyd
Susrut Kesari
William M. Lamanna
Michael J. Parent
Lawrence A. Zazzera
Haiyan Zhang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
3M Innovative Properties Co
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of AU2003287545A1 publication Critical patent/AU2003287545A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Chemically Coating (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2003287545A 2002-12-16 2003-11-07 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor Abandoned AU2003287545A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/320,263 US7147767B2 (en) 2002-12-16 2002-12-16 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US10/320,263 2002-12-16
PCT/US2003/035398 WO2004061162A1 (en) 2002-12-16 2003-11-07 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor

Publications (1)

Publication Number Publication Date
AU2003287545A1 true AU2003287545A1 (en) 2004-07-29

Family

ID=32506836

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003287545A Abandoned AU2003287545A1 (en) 2002-12-16 2003-11-07 Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor

Country Status (7)

Country Link
US (1) US7147767B2 (https=)
EP (1) EP1573091A1 (https=)
JP (1) JP2006509917A (https=)
KR (1) KR20050085664A (https=)
CN (1) CN1726310A (https=)
AU (1) AU2003287545A1 (https=)
WO (1) WO2004061162A1 (https=)

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JP2005327898A (ja) * 2004-05-14 2005-11-24 Fujitsu Ltd 半導体装置及びその製造方法
US20060237319A1 (en) * 2005-04-22 2006-10-26 Akira Furuya Planting process and manufacturing process for semiconductor device thereby, and plating apparatus
JP4802008B2 (ja) * 2006-02-16 2011-10-26 ジュズ インターナショナル ピーティーイー エルティーディー 無電解メッキ液およびメッキ法
US7686875B2 (en) * 2006-05-11 2010-03-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
WO2008126522A1 (ja) * 2007-03-15 2008-10-23 Nippon Mining & Metals Co., Ltd. 銅電解液及びそれを用いて得られた２層フレキシブル基板
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US9439293B2 (en) * 2007-11-21 2016-09-06 Xerox Corporation Galvanic process for making printed conductive metal markings for chipless RFID applications
DE502008002080D1 (de) * 2008-06-02 2011-02-03 Autotech Deutschland Gmbh Pyrophosphathaltiges Bad zur cyanidfreien Abscheidung von Kupfer-Zinn-Legierungen
WO2010115756A1 (en) * 2009-04-07 2010-10-14 Basf Se Composition for metal plating comprising suppressing agent for void free submicron feature filling
CN102256440A (zh) * 2010-05-20 2011-11-23 姚富翔 铝基电路板、其制备方法与供该方法使用的电镀液
CN104120463B (zh) * 2014-06-25 2016-06-22 济南大学 钢铁基体的一种无氰亚铜电镀铜表面改性方法
TWI606140B (zh) * 2015-12-25 2017-11-21 Electroless copper plating bath and electroless copper plating method for increasing hardness of copper plating
US10184189B2 (en) 2016-07-18 2019-01-22 ECSI Fibrotools, Inc. Apparatus and method of contact electroplating of isolated structures
JP2018104739A (ja) * 2016-12-22 2018-07-05 ローム・アンド・ハース電子材料株式会社 無電解めっき方法
CN109208041B (zh) * 2018-09-18 2020-06-02 山东金宝电子股份有限公司 一种高性能超薄双面光铜箔制备用添加剂
US11842958B2 (en) * 2022-03-18 2023-12-12 Chun-Ming Lin Conductive structure including copper-phosphorous alloy and a method of manufacturing conductive structure
US12087662B1 (en) 2023-06-12 2024-09-10 Chun-Ming Lin Semiconductor package structure having thermal management structure

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DE4217366A1 (de) * 1992-05-26 1993-12-02 Bayer Ag Imide und deren Salze sowie deren Verwendung
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US6130161A (en) * 1997-05-30 2000-10-10 International Business Machines Corporation Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity
JPH1192754A (ja) 1997-09-24 1999-04-06 Cci Corp ガラス用撥水処理剤
KR100559110B1 (ko) 1997-12-10 2006-03-13 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 전기화학 시스템에서의 비스(퍼플루오로알킬설포닐)이미드 계면활성제 염
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US6358899B1 (en) * 2000-03-23 2002-03-19 Ashland, Inc. Cleaning compositions and use thereof containing ammonium hydroxide and fluorosurfactant
JP2001278816A (ja) * 2000-03-27 2001-10-10 Asahi Kasei Corp 水系媒体中での反応方法
US6372700B1 (en) 2000-03-31 2002-04-16 3M Innovative Properties Company Fluorinated solvent compositions containing ozone
US6310018B1 (en) 2000-03-31 2001-10-30 3M Innovative Properties Company Fluorinated solvent compositions containing hydrogen fluoride
TW486801B (en) * 2000-04-07 2002-05-11 Taiwan Semiconductor Mfg Method of fabricating dual damascene structure
US6291082B1 (en) * 2000-06-13 2001-09-18 Advanced Micro Devices, Inc. Method of electroless ag layer formation for cu interconnects
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US6534220B2 (en) * 2000-12-29 2003-03-18 3M Innovative Properties Company High-boiling electrolyte solvent
US6555510B2 (en) 2001-05-10 2003-04-29 3M Innovative Properties Company Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
ITMI20020178A1 (it) 2002-02-01 2003-08-01 Ausimont Spa Uso di additivi fluorurati nell'etching o polishing di circuiti integrati

Also Published As

Publication number Publication date
WO2004061162A1 (en) 2004-07-22
CN1726310A (zh) 2006-01-25
JP2006509917A (ja) 2006-03-23
US7147767B2 (en) 2006-12-12
EP1573091A1 (en) 2005-09-14
KR20050085664A (ko) 2005-08-29
US20040112756A1 (en) 2004-06-17

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase