AU2002239767A1 - Copper alloy interconnections for integrated circuits and methods of making same - Google Patents
Copper alloy interconnections for integrated circuits and methods of making sameInfo
- Publication number
- AU2002239767A1 AU2002239767A1 AU2002239767A AU3976702A AU2002239767A1 AU 2002239767 A1 AU2002239767 A1 AU 2002239767A1 AU 2002239767 A AU2002239767 A AU 2002239767A AU 3976702 A AU3976702 A AU 3976702A AU 2002239767 A1 AU2002239767 A1 AU 2002239767A1
- Authority
- AU
- Australia
- Prior art keywords
- methods
- integrated circuits
- copper alloy
- making same
- alloy interconnections
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910000881 Cu alloy Inorganic materials 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76849—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned on top of the main fill metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76867—Barrier, adhesion or liner layers characterized by methods of formation other than PVD, CVD or deposition from a liquids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53233—Copper alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Electrochemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71400300A | 2000-11-15 | 2000-11-15 | |
US09/714,003 | 2000-11-15 | ||
PCT/US2001/051183 WO2002045142A2 (en) | 2000-11-15 | 2001-10-29 | Copper alloy interconnections for integrated circuits and methods of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002239767A1 true AU2002239767A1 (en) | 2002-06-11 |
Family
ID=24868422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002239767A Abandoned AU2002239767A1 (en) | 2000-11-15 | 2001-10-29 | Copper alloy interconnections for integrated circuits and methods of making same |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1338031A2 (en) |
CN (1) | CN1575508A (en) |
AU (1) | AU2002239767A1 (en) |
TW (1) | TWI238459B (en) |
WO (1) | WO2002045142A2 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7074709B2 (en) * | 2002-06-28 | 2006-07-11 | Texas Instruments Incorporated | Localized doping and/or alloying of metallization for increased interconnect performance |
US6841458B2 (en) | 2002-09-12 | 2005-01-11 | Intel Corporation | Dopant interface formation |
WO2004030089A1 (en) * | 2002-09-26 | 2004-04-08 | Advanced Micro Devices, Inc. | Method of forming a copper interconnect with concentrated alloy atoms at copper-passivation interface |
US7147767B2 (en) | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
US6858124B2 (en) * | 2002-12-16 | 2005-02-22 | 3M Innovative Properties Company | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
US6884338B2 (en) | 2002-12-16 | 2005-04-26 | 3M Innovative Properties Company | Methods for polishing and/or cleaning copper interconnects and/or film and compositions therefor |
JP4178295B2 (en) * | 2004-07-14 | 2008-11-12 | 富士通マイクロエレクトロニクス株式会社 | Semiconductor device having wiring made of copper and method of manufacturing the same |
US7169700B2 (en) * | 2004-08-06 | 2007-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal interconnect features with a doping gradient |
DE102005014748B4 (en) * | 2005-03-31 | 2007-02-08 | Advanced Micro Devices, Inc., Sunnyvale | Technique for electrochemical deposition of a chemical order alloy |
JP4589835B2 (en) | 2005-07-13 | 2010-12-01 | 富士通セミコンダクター株式会社 | Semiconductor device manufacturing method and semiconductor device |
CN100431106C (en) * | 2005-09-26 | 2008-11-05 | 财团法人工业技术研究院 | Method for forming interconnected electroplating lead wire of nano-carbon tube and metal composite material |
EP1845554A3 (en) * | 2006-04-10 | 2011-07-13 | Imec | A method to create super secondary grain growth in narrow trenches |
US7843063B2 (en) | 2008-02-14 | 2010-11-30 | International Business Machines Corporation | Microstructure modification in copper interconnect structure |
DE102008033174B3 (en) * | 2008-07-15 | 2009-09-17 | Enthone Inc., West Haven | Cyanide-free electrolyte composition for the electrodeposition of a copper layer and method for the deposition of a copper-containing layer |
CN102116828B (en) * | 2010-12-24 | 2015-10-28 | 上海集成电路研发中心有限公司 | The defining method of electro-migration lifetime of interconnected lines |
JP5667485B2 (en) * | 2011-03-17 | 2015-02-12 | ルネサスエレクトロニクス株式会社 | Semiconductor device manufacturing method and semiconductor device |
CN102956541B (en) * | 2011-08-19 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of method forming copper-connection |
KR20160141875A (en) | 2011-11-04 | 2016-12-09 | 인텔 코포레이션 | Methods and apparatuses to form self-aligned caps |
CN114093809A (en) * | 2011-11-04 | 2022-02-25 | 英特尔公司 | Method and apparatus for forming self-aligned caps |
US8729702B1 (en) * | 2012-11-20 | 2014-05-20 | Stmicroelectronics, Inc. | Copper seed layer for an interconnect structure having a doping concentration level gradient |
CN103943556A (en) * | 2014-04-28 | 2014-07-23 | 上海集成电路研发中心有限公司 | Method for processing electrocoppering film used for semiconductor copper connection process |
CN105845620A (en) * | 2015-01-16 | 2016-08-10 | 中芯国际集成电路制造(上海)有限公司 | Method of making copper interconnection structure, semiconductor device and electronic apparatus |
CN111900175A (en) * | 2020-07-29 | 2020-11-06 | 北海惠科光电技术有限公司 | Display panel and manufacturing method thereof |
CN118186248A (en) * | 2022-12-12 | 2024-06-14 | 华为技术有限公司 | Copper-based composite material, preparation method thereof, PCB, integrated circuit and electronic equipment |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5385661A (en) * | 1993-09-17 | 1995-01-31 | International Business Machines Corporation | Acid electrolyte solution and process for the electrodeposition of copper-rich alloys exploiting the phenomenon of underpotential deposition |
US6268291B1 (en) * | 1995-12-29 | 2001-07-31 | International Business Machines Corporation | Method for forming electromigration-resistant structures by doping |
US6022808A (en) * | 1998-03-16 | 2000-02-08 | Advanced Micro Devices, Inc. | Copper interconnect methodology for enhanced electromigration resistance |
ATE316426T1 (en) * | 1998-06-30 | 2006-02-15 | Semitool Inc | METALLIZATION STRUCTURES FOR MICROELECTRONIC APPLICATIONS AND METHOD FOR PRODUCING THESE STRUCTURES |
WO2000014306A1 (en) * | 1998-09-03 | 2000-03-16 | Ebara Corporation | Method for plating substrate and apparatus |
US6123825A (en) * | 1998-12-02 | 2000-09-26 | International Business Machines Corporation | Electromigration-resistant copper microstructure and process of making |
KR100385042B1 (en) * | 1998-12-03 | 2003-06-18 | 인터내셔널 비지네스 머신즈 코포레이션 | Method for forming electromigration-resistant structures by doping |
US6110817A (en) * | 1999-08-19 | 2000-08-29 | Taiwan Semiconductor Manufacturing Company | Method for improvement of electromigration of copper by carbon doping |
US6387806B1 (en) * | 2000-09-06 | 2002-05-14 | Advanced Micro Devices, Inc. | Filling an interconnect opening with different types of alloys to enhance interconnect reliability |
-
2001
- 2001-10-29 EP EP01987565A patent/EP1338031A2/en not_active Withdrawn
- 2001-10-29 AU AU2002239767A patent/AU2002239767A1/en not_active Abandoned
- 2001-10-29 CN CNA018188702A patent/CN1575508A/en active Pending
- 2001-10-29 TW TW090126739A patent/TWI238459B/en not_active IP Right Cessation
- 2001-10-29 WO PCT/US2001/051183 patent/WO2002045142A2/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2002045142A9 (en) | 2003-02-06 |
WO2002045142A2 (en) | 2002-06-06 |
CN1575508A (en) | 2005-02-02 |
WO2002045142A3 (en) | 2003-06-05 |
EP1338031A2 (en) | 2003-08-27 |
TWI238459B (en) | 2005-08-21 |
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