AU2003284684A1 - Plasma processing apparatus and method - Google Patents

Plasma processing apparatus and method

Info

Publication number
AU2003284684A1
AU2003284684A1 AU2003284684A AU2003284684A AU2003284684A1 AU 2003284684 A1 AU2003284684 A1 AU 2003284684A1 AU 2003284684 A AU2003284684 A AU 2003284684A AU 2003284684 A AU2003284684 A AU 2003284684A AU 2003284684 A1 AU2003284684 A1 AU 2003284684A1
Authority
AU
Australia
Prior art keywords
processing apparatus
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003284684A
Other languages
English (en)
Inventor
Taichi Hirano
Jun Hirose
Hiroyuki Ishihara
Akira Koshiishi
Kohji Numata
Masahiro Ogasawara
Jun Ooyabu
Michishige Saito
Hiromitsu Sasaki
Tetsuo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003284684A1 publication Critical patent/AU2003284684A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
AU2003284684A 2002-11-26 2003-11-25 Plasma processing apparatus and method Abandoned AU2003284684A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002-341949 2002-11-26
JP2002341949 2002-11-26
JP2003358425A JP4584565B2 (ja) 2002-11-26 2003-10-17 プラズマ処理装置及びプラズマ処理方法
JP2003-358425 2003-10-17
PCT/JP2003/015030 WO2004049420A1 (ja) 2002-11-26 2003-11-25 プラズマ処理装置及び方法

Publications (1)

Publication Number Publication Date
AU2003284684A1 true AU2003284684A1 (en) 2004-06-18

Family

ID=32396265

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003284684A Abandoned AU2003284684A1 (en) 2002-11-26 2003-11-25 Plasma processing apparatus and method

Country Status (7)

Country Link
US (1) US7506610B2 (enExample)
JP (1) JP4584565B2 (enExample)
KR (1) KR100652983B1 (enExample)
CN (1) CN100459059C (enExample)
AU (1) AU2003284684A1 (enExample)
TW (1) TW200416874A (enExample)
WO (1) WO2004049420A1 (enExample)

Families Citing this family (47)

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US7951262B2 (en) * 2004-06-21 2011-05-31 Tokyo Electron Limited Plasma processing apparatus and method
US7988816B2 (en) 2004-06-21 2011-08-02 Tokyo Electron Limited Plasma processing apparatus and method
KR101248691B1 (ko) * 2004-06-21 2013-04-03 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP4550507B2 (ja) * 2004-07-26 2010-09-22 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7507670B2 (en) * 2004-12-23 2009-03-24 Lam Research Corporation Silicon electrode assembly surface decontamination by acidic solution
US7674393B2 (en) * 2005-03-25 2010-03-09 Tokyo Electron Limited Etching method and apparatus
JP4642528B2 (ja) * 2005-03-31 2011-03-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7993489B2 (en) 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
JP2007234770A (ja) * 2006-02-28 2007-09-13 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US8157953B2 (en) * 2006-03-29 2012-04-17 Tokyo Electron Limited Plasma processing apparatus
JP5116983B2 (ja) * 2006-03-30 2013-01-09 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US7829463B2 (en) 2006-03-30 2010-11-09 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US8034213B2 (en) 2006-03-30 2011-10-11 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
JP5057768B2 (ja) * 2006-12-19 2012-10-24 株式会社ライフ技術研究所 直流プラズマ成膜装置
JP5474291B2 (ja) * 2007-11-05 2014-04-16 株式会社アルバック アッシング装置
JP2009239012A (ja) * 2008-03-27 2009-10-15 Tokyo Electron Ltd プラズマ処理装置及びプラズマエッチング方法
US8367965B2 (en) * 2008-08-28 2013-02-05 Hermes-Epitek Corp. Electrode design for plasma processing chamber
CN102365906B (zh) * 2009-02-13 2016-02-03 应用材料公司 用于等离子体腔室电极的rf总线与rf回流总线
EP2481831A1 (en) * 2009-09-25 2012-08-01 Kyocera Corporation Deposited film formation device and deposited film formation method
JP5312369B2 (ja) * 2010-02-22 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
TWI474365B (zh) * 2010-08-25 2015-02-21 Canon Anelva Corp And a method of manufacturing the plasma processing apparatus and apparatus
JP5709505B2 (ja) * 2010-12-15 2015-04-30 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法、および記憶媒体
KR101171988B1 (ko) 2011-03-30 2012-08-07 엘아이지에이디피 주식회사 플라즈마 처리장치
TWI661746B (zh) 2011-10-05 2019-06-01 應用材料股份有限公司 電漿處理設備及其蓋組件（一）
CN103377868A (zh) * 2012-04-14 2013-10-30 靖江先锋半导体科技有限公司 一种刻蚀电极机中的下电极装置
US9928987B2 (en) * 2012-07-20 2018-03-27 Applied Materials, Inc. Inductively coupled plasma source with symmetrical RF feed
US10249470B2 (en) * 2012-07-20 2019-04-02 Applied Materials, Inc. Symmetrical inductively coupled plasma source with coaxial RF feed and coaxial shielding
US9449794B2 (en) * 2012-07-20 2016-09-20 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and spiral coil antenna
US10170279B2 (en) 2012-07-20 2019-01-01 Applied Materials, Inc. Multiple coil inductively coupled plasma source with offset frequencies and double-walled shielding
US9082590B2 (en) 2012-07-20 2015-07-14 Applied Materials, Inc. Symmetrical inductively coupled plasma source with side RF feeds and RF distribution plates
US9745663B2 (en) * 2012-07-20 2017-08-29 Applied Materials, Inc. Symmetrical inductively coupled plasma source with symmetrical flow chamber
JP6120527B2 (ja) 2012-11-05 2017-04-26 東京エレクトロン株式会社 プラズマ処理方法
US10163606B2 (en) 2013-03-15 2018-12-25 Applied Materials, Inc. Plasma reactor with highly symmetrical four-fold gas injection
JP6249659B2 (ja) 2013-07-25 2017-12-20 東京エレクトロン株式会社 プラズマ処理装置
JP2017157778A (ja) 2016-03-04 2017-09-07 東京エレクトロン株式会社 基板処理装置
KR101938306B1 (ko) * 2016-04-18 2019-01-14 최상준 건식 에칭장치의 제어방법
KR101909479B1 (ko) 2016-10-06 2018-10-19 세메스 주식회사 기판 지지 유닛, 그를 포함하는 기판 처리 장치, 그리고 그 제어 방법
KR102159894B1 (ko) * 2016-11-30 2020-09-24 도쿄엘렉트론가부시키가이샤 플라스마 처리 장치
CN108257840B (zh) * 2016-12-29 2021-03-30 中微半导体设备(上海)股份有限公司 一种等离子处理装置
JP6836976B2 (ja) * 2017-09-26 2021-03-03 東京エレクトロン株式会社 プラズマ処理装置
JP7345382B2 (ja) * 2018-12-28 2023-09-15 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
TWI846953B (zh) * 2019-10-08 2024-07-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 基板處理裝置
CN113936985B (zh) * 2020-07-14 2025-03-11 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法
JP7446190B2 (ja) * 2020-09-23 2024-03-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ生成方法
US12165844B2 (en) * 2020-11-18 2024-12-10 Lam Research Corporation Uniformity control circuit for impedance match
CN118098916A (zh) * 2022-11-28 2024-05-28 中微半导体设备(上海)股份有限公司 晶圆斜面蚀刻设备和方法
CN118824825B (zh) * 2023-04-17 2026-03-17 中微半导体设备(上海)股份有限公司 一种等离子体处理设备及其安装维护方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0637051A (ja) * 1992-07-15 1994-02-10 Tokyo Electron Ltd プラズマ装置
JP3499104B2 (ja) * 1996-03-01 2004-02-23 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JPH10134995A (ja) * 1996-10-28 1998-05-22 Toshiba Corp プラズマ処理装置及びプラズマ処理方法
JPH10172792A (ja) * 1996-12-05 1998-06-26 Tokyo Electron Ltd プラズマ処理装置
US20010037770A1 (en) * 2000-04-27 2001-11-08 Toru Otsubo Plasma processing apparatus and processing method
JP3704023B2 (ja) * 1999-04-28 2005-10-05 株式会社日立製作所 プラズマ処理装置及びプラズマ処理方法
JP4322350B2 (ja) * 1999-05-06 2009-08-26 東京エレクトロン株式会社 プラズマ処理装置
JP4454718B2 (ja) 1999-05-07 2010-04-21 東京エレクトロン株式会社 プラズマ処理装置およびそれに用いられる電極
JP2001313286A (ja) * 2000-02-24 2001-11-09 Tokyo Electron Ltd 平行平板型ドライエッチング装置
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6528751B1 (en) * 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma

Also Published As

Publication number Publication date
KR100652983B1 (ko) 2006-12-01
CN100459059C (zh) 2009-02-04
KR20050086834A (ko) 2005-08-30
WO2004049420A1 (ja) 2004-06-10
JP2004193566A (ja) 2004-07-08
TWI321814B (enExample) 2010-03-11
TW200416874A (en) 2004-09-01
US20050257743A1 (en) 2005-11-24
CN1717788A (zh) 2006-01-04
JP4584565B2 (ja) 2010-11-24
US7506610B2 (en) 2009-03-24

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase