AU2003284683A1 - Plasma processing method and apparatus - Google Patents

Plasma processing method and apparatus

Info

Publication number
AU2003284683A1
AU2003284683A1 AU2003284683A AU2003284683A AU2003284683A1 AU 2003284683 A1 AU2003284683 A1 AU 2003284683A1 AU 2003284683 A AU2003284683 A AU 2003284683A AU 2003284683 A AU2003284683 A AU 2003284683A AU 2003284683 A1 AU2003284683 A1 AU 2003284683A1
Authority
AU
Australia
Prior art keywords
processing method
plasma processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003284683A
Other languages
English (en)
Inventor
Taichi Hirano
Jun Hirose
Hiroyuki Ishihara
Akira Koshiishi
Kohji Numata
Masahiro Ogasawara
Jun Ooyabu
Michishige Saito
Hiromitsu Sasaki
Tetsuo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2003284683A1 publication Critical patent/AU2003284683A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • ing And Chemical Polishing (AREA)
AU2003284683A 2002-11-26 2003-11-25 Plasma processing method and apparatus Abandoned AU2003284683A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2002-341949 2002-11-26
JP2002341949 2002-11-26
JP2003358432A JP4753276B2 (ja) 2002-11-26 2003-10-17 プラズマ処理方法及びプラズマ処理装置
JP2003-358432 2003-10-17
PCT/JP2003/015029 WO2004049419A1 (ja) 2002-11-26 2003-11-25 プラズマ処理方法及び装置

Publications (1)

Publication Number Publication Date
AU2003284683A1 true AU2003284683A1 (en) 2004-06-18

Family

ID=32396266

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003284683A Abandoned AU2003284683A1 (en) 2002-11-26 2003-11-25 Plasma processing method and apparatus

Country Status (7)

Country Link
US (3) US20060000803A1 (enExample)
JP (1) JP4753276B2 (enExample)
KR (1) KR100652982B1 (enExample)
CN (1) CN100416773C (enExample)
AU (1) AU2003284683A1 (enExample)
TW (1) TW200416793A (enExample)
WO (1) WO2004049419A1 (enExample)

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TWI565527B (zh) * 2011-12-26 2017-01-11 鴻海精密工業股份有限公司 電漿成膜裝置
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JP6120527B2 (ja) * 2012-11-05 2017-04-26 東京エレクトロン株式会社 プラズマ処理方法
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US11450545B2 (en) 2019-04-17 2022-09-20 Samsung Electronics Co., Ltd. Capacitively-coupled plasma substrate processing apparatus including a focus ring and a substrate processing method using the same
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10954595B2 (en) * 2019-07-30 2021-03-23 Applied Materials, Inc. High power showerhead with recursive gas flow distribution
JP7360934B2 (ja) * 2019-12-25 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
GB202001781D0 (en) * 2020-02-10 2020-03-25 Spts Technologies Ltd Pe-Cvd apparatus and method
KR102592414B1 (ko) * 2020-11-23 2023-10-20 세메스 주식회사 전극 제어 유닛을 구비하는 기판 처리 장치
CN114695051B (zh) * 2020-12-31 2025-02-21 拓荆科技股份有限公司 半导体处理设备及方法
JP2024537771A (ja) * 2021-09-29 2024-10-16 ラム リサーチ コーポレーション エッジ容量結合プラズマチャンバ構造
JP2023127762A (ja) * 2022-03-02 2023-09-14 キオクシア株式会社 プラズマ処理装置
CN114695065B (zh) * 2022-03-31 2025-06-24 北京北方华创微电子装备有限公司 半导体加工设备

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Also Published As

Publication number Publication date
CN1717790A (zh) 2006-01-04
WO2004049419A1 (ja) 2004-06-10
JP4753276B2 (ja) 2011-08-24
CN100416773C (zh) 2008-09-03
TW200416793A (en) 2004-09-01
US20100043974A1 (en) 2010-02-25
US8512510B2 (en) 2013-08-20
KR20050086831A (ko) 2005-08-30
KR100652982B1 (ko) 2006-12-01
US20060000803A1 (en) 2006-01-05
JP2004193567A (ja) 2004-07-08
TWI333229B (enExample) 2010-11-11
US20110214813A1 (en) 2011-09-08

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