AU2003224937A1 - Multirate processing for metrology of plasma rf source - Google Patents

Multirate processing for metrology of plasma rf source

Info

Publication number
AU2003224937A1
AU2003224937A1 AU2003224937A AU2003224937A AU2003224937A1 AU 2003224937 A1 AU2003224937 A1 AU 2003224937A1 AU 2003224937 A AU2003224937 A AU 2003224937A AU 2003224937 A AU2003224937 A AU 2003224937A AU 2003224937 A1 AU2003224937 A1 AU 2003224937A1
Authority
AU
Australia
Prior art keywords
metrology
plasma
source
multirate processing
multirate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003224937A
Other languages
English (en)
Other versions
AU2003224937A8 (en
Inventor
David J. Coumou
Michael L. Kirk
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MKS Instruments Inc
Original Assignee
Eni Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eni Technology Inc filed Critical Eni Technology Inc
Publication of AU2003224937A8 publication Critical patent/AU2003224937A8/xx
Publication of AU2003224937A1 publication Critical patent/AU2003224937A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H17/00—Networks using digital techniques
    • H03H17/02—Frequency selective networks
    • H03H17/06—Non-recursive filters
    • H03H17/0621—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing
    • H03H17/0635—Non-recursive filters with input-sampling frequency and output-delivery frequency which differ, e.g. extrapolation; Anti-aliasing characterized by the ratio between the input-sampling and output-delivery frequencies
    • H03H17/0671—Cascaded integrator-comb [CIC] filters
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
AU2003224937A 2002-07-10 2003-04-14 Multirate processing for metrology of plasma rf source Abandoned AU2003224937A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/192,196 2002-07-10
US10/192,196 US6707255B2 (en) 2002-07-10 2002-07-10 Multirate processing for metrology of plasma RF source
PCT/US2003/011266 WO2004008502A2 (en) 2002-07-10 2003-04-14 Multirate processing for metrology of plasma rf source

Publications (2)

Publication Number Publication Date
AU2003224937A8 AU2003224937A8 (en) 2004-02-02
AU2003224937A1 true AU2003224937A1 (en) 2004-02-02

Family

ID=30114293

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003224937A Abandoned AU2003224937A1 (en) 2002-07-10 2003-04-14 Multirate processing for metrology of plasma rf source

Country Status (7)

Country Link
US (1) US6707255B2 (enExample)
EP (1) EP1520288B1 (enExample)
JP (2) JP2005532668A (enExample)
KR (1) KR100738990B1 (enExample)
CN (1) CN100339943C (enExample)
AU (1) AU2003224937A1 (enExample)
WO (1) WO2004008502A2 (enExample)

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CN100543481C (zh) * 2005-01-11 2009-09-23 亿诺维新工程股份有限公司 检测传递到负载的rf功率以及该负载的复数阻抗的方法
US7602127B2 (en) * 2005-04-18 2009-10-13 Mks Instruments, Inc. Phase and frequency control of a radio frequency generator from an external source
US8102954B2 (en) * 2005-04-26 2012-01-24 Mks Instruments, Inc. Frequency interference detection and correction
US7477711B2 (en) * 2005-05-19 2009-01-13 Mks Instruments, Inc. Synchronous undersampling for high-frequency voltage and current measurements
US7780814B2 (en) * 2005-07-08 2010-08-24 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US7196650B1 (en) 2006-01-27 2007-03-27 Analog Devices, Inc. Signal converter systems and methods with enhanced signal-to-noise ratios
US7788309B2 (en) * 2006-04-04 2010-08-31 Analog Devices, Inc. Interleaved comb and integrator filter structures
US7408495B2 (en) * 2006-05-15 2008-08-05 Guzik Technical Enterprises Digital equalization of multiple interleaved analog-to-digital converters
US8055203B2 (en) * 2007-03-14 2011-11-08 Mks Instruments, Inc. Multipoint voltage and current probe system
DE102007056468A1 (de) * 2007-11-22 2009-06-04 Hüttinger Elektronik Gmbh + Co. Kg Messsignalverarbeitungseinrichtung und Verfahren zur Verarbeitung von zumindest zwei Messsignalen
US7822565B2 (en) * 2007-12-31 2010-10-26 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring characteristics of RF power
US7839223B2 (en) * 2008-03-23 2010-11-23 Advanced Energy Industries, Inc. Method and apparatus for advanced frequency tuning
US8213885B2 (en) * 2008-04-11 2012-07-03 Nautel Limited Impedance measurement in an active radio frequency transmitter
US7970562B2 (en) * 2008-05-07 2011-06-28 Advanced Energy Industries, Inc. System, method, and apparatus for monitoring power
US8040068B2 (en) 2009-02-05 2011-10-18 Mks Instruments, Inc. Radio frequency power control system
CN102469675A (zh) * 2010-11-05 2012-05-23 北京北方微电子基地设备工艺研究中心有限责任公司 功率匹配装置和半导体设备
CN102981156A (zh) * 2011-09-06 2013-03-20 中国科学院声学研究所 一种超声成像后处理方法及装置
KR102009541B1 (ko) * 2012-02-23 2019-08-09 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치, 및 고주파 발생기
WO2014016357A2 (en) * 2012-07-25 2014-01-30 Impedans Ltd Analysing rf signals from a plasma system
CN104871430B (zh) 2012-12-18 2018-01-12 通快许廷格两合公司 用于产生高频功率的方法和具有用于给负载供送功率的功率转换器的功率供送系统
DE202013012714U1 (de) 2012-12-18 2018-10-15 TRUMPF Hüttinger GmbH + Co. KG Leistungsversorgungssystem mit einem Leistungswandler
US10821542B2 (en) * 2013-03-15 2020-11-03 Mks Instruments, Inc. Pulse synchronization by monitoring power in another frequency band
CN103731148B (zh) * 2013-12-31 2017-04-26 上海英威腾工业技术有限公司 一种电流采样处理装置及电机驱动器
US9336997B2 (en) * 2014-03-17 2016-05-10 Applied Materials, Inc. RF multi-feed structure to improve plasma uniformity
DE102015212242A1 (de) * 2015-06-30 2017-01-05 TRUMPF Hüttinger GmbH + Co. KG Verfahren zum Abtasten eines mit einem Plasmaprozess in Beziehung stehenden Signalgemischs
US9947514B2 (en) * 2015-09-01 2018-04-17 Mks Instruments, Inc. Plasma RF bias cancellation system
US10044338B2 (en) * 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
WO2017105497A1 (en) 2015-12-18 2017-06-22 Olympus Corporation Method and apparatus for accurate and efficient spectrum estimation using improved sliding dft
US9748076B1 (en) 2016-04-20 2017-08-29 Advanced Energy Industries, Inc. Apparatus for frequency tuning in a RF generator
KR101930440B1 (ko) * 2017-01-04 2018-12-18 주식회사 메디플 플라즈마 생성을 위한 전력 공급 장치
US10546724B2 (en) 2017-05-10 2020-01-28 Mks Instruments, Inc. Pulsed, bidirectional radio frequency source/load
US11042140B2 (en) 2018-06-26 2021-06-22 Mks Instruments, Inc. Adaptive control for a power generator
US11901159B2 (en) 2018-09-13 2024-02-13 Hitachi Kokusai Electric Inc. RF generator device and substrate processing apparatus
US10623013B1 (en) * 2018-10-29 2020-04-14 Texas Instruments Incorporated Systems with pairs of voltage level shifter switches to couple voltage level shifters to anti-aliasing filters
US11158488B2 (en) 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
US12394604B2 (en) 2020-09-11 2025-08-19 Applied Materials, Inc. Plasma source with floating electrodes
US11776793B2 (en) 2020-11-13 2023-10-03 Applied Materials, Inc. Plasma source with ceramic electrode plate

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US5808415A (en) * 1997-03-19 1998-09-15 Scientific Systems Research Limited Apparatus for sensing RF current delivered to a plasma with two inductive loops
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US6509542B1 (en) * 1999-09-30 2003-01-21 Lam Research Corp. Voltage control sensor and control interface for radio frequency power regulation in a plasma reactor
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US6608446B1 (en) * 2002-02-25 2003-08-19 Eni Technology, Inc. Method and apparatus for radio frequency (RF) metrology

Also Published As

Publication number Publication date
WO2004008502A2 (en) 2004-01-22
KR100738990B1 (ko) 2007-07-13
CN1647237A (zh) 2005-07-27
AU2003224937A8 (en) 2004-02-02
JP5631628B2 (ja) 2014-11-26
CN100339943C (zh) 2007-09-26
WO2004008502A3 (en) 2004-09-10
EP1520288B1 (en) 2018-10-17
JP2010212252A (ja) 2010-09-24
US20040007984A1 (en) 2004-01-15
EP1520288A2 (en) 2005-04-06
KR20050039751A (ko) 2005-04-29
JP2005532668A (ja) 2005-10-27
US6707255B2 (en) 2004-03-16

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase