AU2003281401A1 - Plasma processing equipment - Google Patents
Plasma processing equipmentInfo
- Publication number
- AU2003281401A1 AU2003281401A1 AU2003281401A AU2003281401A AU2003281401A1 AU 2003281401 A1 AU2003281401 A1 AU 2003281401A1 AU 2003281401 A AU2003281401 A AU 2003281401A AU 2003281401 A AU2003281401 A AU 2003281401A AU 2003281401 A1 AU2003281401 A1 AU 2003281401A1
- Authority
- AU
- Australia
- Prior art keywords
- processing equipment
- plasma processing
- plasma
- equipment
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002197227A JP4540926B2 (en) | 2002-07-05 | 2002-07-05 | Plasma processing equipment |
JP2002-197227 | 2002-07-05 | ||
PCT/JP2003/008491 WO2004006319A1 (en) | 2002-07-05 | 2003-07-03 | Plasma processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003281401A1 true AU2003281401A1 (en) | 2004-01-23 |
Family
ID=30112393
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003281401A Abandoned AU2003281401A1 (en) | 2002-07-05 | 2003-07-03 | Plasma processing equipment |
Country Status (9)
Country | Link |
---|---|
US (2) | US20050092437A1 (en) |
EP (1) | EP1521297B1 (en) |
JP (1) | JP4540926B2 (en) |
KR (1) | KR100614065B1 (en) |
CN (1) | CN100405557C (en) |
AU (1) | AU2003281401A1 (en) |
DE (1) | DE60335951D1 (en) |
TW (1) | TWI239052B (en) |
WO (1) | WO2004006319A1 (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004039969A1 (en) * | 2004-08-18 | 2006-02-23 | Leybold Optics Gmbh | Plasma source for depositing layers on materials, cleaning and etching has power supply connected to electromagnetic radiation generator under gas supply and plasma volume |
JP4350695B2 (en) * | 2004-12-01 | 2009-10-21 | 株式会社フューチャービジョン | Processing equipment |
JP2006244891A (en) * | 2005-03-04 | 2006-09-14 | Tokyo Electron Ltd | Microwave plasma processing device |
JP5082229B2 (en) * | 2005-11-29 | 2012-11-28 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP5082459B2 (en) * | 2006-01-20 | 2012-11-28 | 東京エレクトロン株式会社 | Plasma processing apparatus and top plate manufacturing method |
US20080254220A1 (en) | 2006-01-20 | 2008-10-16 | Tokyo Electron Limited | Plasma processing apparatus |
WO2007083795A1 (en) * | 2006-01-20 | 2007-07-26 | Tokyo Electron Limited | Plasma processing equipment |
JP4915985B2 (en) * | 2006-02-06 | 2012-04-11 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
KR100980529B1 (en) * | 2006-03-27 | 2010-09-06 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
JP2008047869A (en) * | 2006-06-13 | 2008-02-28 | Hokuriku Seikei Kogyo Kk | Shower plate and its fabrication process, plasma processing equipment employing it, plasma processing method and process for fabricating electronic device |
JP5463536B2 (en) * | 2006-07-20 | 2014-04-09 | 北陸成型工業株式会社 | Shower plate and manufacturing method thereof, and plasma processing apparatus, plasma processing method and electronic device manufacturing method using the shower plate |
JP5004271B2 (en) * | 2006-09-29 | 2012-08-22 | 東京エレクトロン株式会社 | Microwave plasma processing apparatus, dielectric window manufacturing method, and microwave plasma processing method |
JP5010234B2 (en) | 2006-10-23 | 2012-08-29 | 北陸成型工業株式会社 | Shower plate in which gas discharge hole member is integrally sintered and manufacturing method thereof |
JP5058727B2 (en) * | 2007-09-06 | 2012-10-24 | 東京エレクトロン株式会社 | Top plate structure and plasma processing apparatus using the same |
KR101111207B1 (en) | 2009-05-20 | 2012-02-20 | 주식회사 에이피시스 | Apparatus for generating plasma |
JP6101467B2 (en) * | 2012-10-04 | 2017-03-22 | 東京エレクトロン株式会社 | Film forming method and film forming apparatus |
US20150118416A1 (en) * | 2013-10-31 | 2015-04-30 | Semes Co., Ltd. | Substrate treating apparatus and method |
CN104357810A (en) * | 2014-11-04 | 2015-02-18 | 大连理工常州研究院有限公司 | Coaxial microwave plasma film-deposition equipment |
JP6462449B2 (en) * | 2015-03-26 | 2019-01-30 | 京セラ株式会社 | High-frequency window member, semiconductor manufacturing device member, and flat panel display (FPD) manufacturing device member |
JP6803917B2 (en) * | 2016-02-12 | 2020-12-23 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Vacuum processing system and method of performing vacuum processing |
US11776793B2 (en) * | 2020-11-13 | 2023-10-03 | Applied Materials, Inc. | Plasma source with ceramic electrode plate |
CN112663029B (en) * | 2020-11-30 | 2021-10-19 | 上海征世科技股份有限公司 | Microwave plasma chemical vapor deposition device and vacuum reaction chamber thereof |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2212974B (en) * | 1987-11-25 | 1992-02-12 | Fuji Electric Co Ltd | Plasma processing apparatus |
US5129359A (en) * | 1988-11-15 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus for the formation of functional deposited film with discharge space provided with gas feed device capable of applying bias voltage between the gas feed device and substrate |
JP2894658B2 (en) * | 1992-01-17 | 1999-05-24 | 株式会社東芝 | Dry etching method and apparatus |
JPH06208952A (en) * | 1993-01-11 | 1994-07-26 | Fuji Electric Co Ltd | Plasma cvd processing system |
US5522933A (en) * | 1994-05-19 | 1996-06-04 | Geller; Anthony S. | Particle-free microchip processing |
US5665640A (en) * | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
US5985089A (en) * | 1995-05-25 | 1999-11-16 | Tegal Corporation | Plasma etch system |
US5698036A (en) * | 1995-05-26 | 1997-12-16 | Tokyo Electron Limited | Plasma processing apparatus |
JPH09129607A (en) * | 1995-11-01 | 1997-05-16 | Canon Inc | Device and method of microwave plasma etching |
US6357385B1 (en) * | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
US5834371A (en) * | 1997-01-31 | 1998-11-10 | Tokyo Electron Limited | Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof |
JPH11186238A (en) * | 1997-12-25 | 1999-07-09 | Nec Corp | Plasma processor |
JPH11193466A (en) * | 1997-12-26 | 1999-07-21 | Canon Inc | Plasma treating device and plasma treating method |
US6383964B1 (en) * | 1998-11-27 | 2002-05-07 | Kyocera Corporation | Ceramic member resistant to halogen-plasma corrosion |
TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
KR100762754B1 (en) * | 1999-11-30 | 2007-10-09 | 동경 엘렉트론 주식회사 | Plasma processing apparatus |
US6847003B2 (en) * | 2000-10-13 | 2005-01-25 | Tokyo Electron Limited | Plasma processing apparatus |
US6598610B2 (en) * | 2001-02-05 | 2003-07-29 | Dalsa Semiconductor Inc. | Method of depositing a thick dielectric film |
JP2002299240A (en) * | 2001-03-28 | 2002-10-11 | Tadahiro Omi | Plasma processor |
-
2002
- 2002-07-05 JP JP2002197227A patent/JP4540926B2/en not_active Expired - Fee Related
-
2003
- 2003-07-03 EP EP03741183A patent/EP1521297B1/en not_active Expired - Fee Related
- 2003-07-03 WO PCT/JP2003/008491 patent/WO2004006319A1/en active Application Filing
- 2003-07-03 DE DE60335951T patent/DE60335951D1/en not_active Expired - Lifetime
- 2003-07-03 CN CNB038006855A patent/CN100405557C/en not_active Expired - Fee Related
- 2003-07-03 US US10/493,946 patent/US20050092437A1/en not_active Abandoned
- 2003-07-03 AU AU2003281401A patent/AU2003281401A1/en not_active Abandoned
- 2003-07-03 KR KR1020047005933A patent/KR100614065B1/en not_active IP Right Cessation
- 2003-07-04 TW TW092118344A patent/TWI239052B/en not_active IP Right Cessation
-
2009
- 2009-03-02 US US12/379,805 patent/US20090229755A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN1533596A (en) | 2004-09-29 |
EP1521297A1 (en) | 2005-04-06 |
EP1521297B1 (en) | 2011-02-02 |
US20050092437A1 (en) | 2005-05-05 |
WO2004006319A1 (en) | 2004-01-15 |
KR100614065B1 (en) | 2006-08-22 |
JP2004039972A (en) | 2004-02-05 |
EP1521297A4 (en) | 2006-06-07 |
US20090229755A1 (en) | 2009-09-17 |
KR20040045900A (en) | 2004-06-02 |
CN100405557C (en) | 2008-07-23 |
DE60335951D1 (en) | 2011-03-17 |
JP4540926B2 (en) | 2010-09-08 |
TW200414350A (en) | 2004-08-01 |
TWI239052B (en) | 2005-09-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |